Sensor Electronics Technology, Inc. demonstrates AlInN epitaxial materials growth on bulk GaN substrats, wins STTR Phase II to develop AlInN/GaN HFETs on bulk GaN
Columbia, SC - October 9, 2011 - Sensor Electronic Technology, Inc. (SETi) announced
that it has been awarded an STTR (Small Business Technology Transfer) Phase II program
to further develop AlInN/GaN based HFETs on free standing bulk GaN substrates.
The Phase II program was awarded through the Missile Defense Agency (MDA) following
successful demonstration of the epitaxial growth of an entirely strain‐free HFET
structure, comprising of lattice matched AlInN on bulk GaN substrates in the Phase I
program. During Phase I, AlInN/GaN heterostructures were deposited on bulk GaN
substrates with Indium compositions ranging from 0‐25%, with minimum sheet
resistances of ~235 ohm/square.
This new program will target further reductions in defect density in the epitaxial GaN
and AlInN layers and demonstrate increased device reliability over conventional
AlGaN/GaN HFETs. Increased reliability in GaN HFETs is essential in the defense and
satellite markets, which account for over a quarter of the entire GaN RF device market.
SETi, famous for its deep UV LED products UVTOP® and UVClean® emitting light shorter
than 365 nm, is the world leader in Al(In)GaN semiconductor material technologies and
with its patented process MEMOCVD® has a very novel process for defect reduction in
AlGaN‐based epitaxial structures on sapphire substrates. The application of
MEMOCVD® in UVLED structures enabled SETi to become the first UV LED company to
offer LEDs with wavelengths shorter than 365nm on the commercial market and
continues to ensure its lead in this market today. SETi has now demonstrated the
benefits of its Al(In)GaN materials growth technologies on bulk Nitride substrates and
through further development from programs such as this MDA funded program, will
push AlInN material technology further to the development of next generation high
power, very high‐frequency RF components.
For more information, please contact info@s‐et.com.
