Peregrine Systems
San Diego, CA 92130
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Peregrine Semiconductor Wins 2016 ECN IMPACT Award
UltraCMOS-® PE42723 High Linearity RF Switch Named a Market Disruptor SAN DIEGO, Oct. 13, 2016 -- Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces that the UltraCMOS® PE42723 high linearity RF switch has won an ECN IMPACT Award in the market disruptor category. In addition, the PE42723 switch was named a finalist in the...
Read More »Peregrine Semiconductor Wins 2016 ECN IMPACT Award
UltraCMOSÃ-® PE42723 High Linearity RF Switch Named a Market Disruptor SAN DIEGO, Oct. 13, 2016 -- Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces that the UltraCMOSî PE42723 high linearity RF switch has won an ECN IMPACT Award in the market disruptor category. In addition, the PE42723 switch was named a finalist...
Read More »GaN FET Driver features internal dead-time control.
Designed to drive gates of high-side and low-side GaN FET in switching configuration, UltraCMOS-® PE29100 enables transistors to achieve their performance and speed potential. Half-bridge driver operates up to 33 MHz, handles voltages up to 80 V, and delivers short propagation delay of 8 ns. Device has rise time of 2.5 ns and fall time of 1.8 ns when driving 1,000 pF load. Offered as 2 x 1.6...
Read More »GaN FET Driver features internal dead-time control.
Designed to drive gates of high-side and low-side GaN FET in switching configuration, UltraCMOSÃ-® PE29100 enables transistors to achieve their performance and speed potential. Half-bridge driver operates up to 33 MHz, handles voltages up to 80 V, and delivers short propagation delay of 8 ns. Device has rise time of 2.5 ns and fall time of 1.8 ns when driving 1,000 pF load. Offered...
Read More »X-Band MPAC-Beamforming Device covers 8-12 GHz range.
Designed for X-band radar applications, UltraCMOS-® PE19601 integrates 6-bit digital step attenuator, 10-bit digital phase shifter, RX/TX switching, and digital serial interface on 2.6 x 4.65 mm bare wirebond monolithic die. Monolithic phase and amplitude controller (MPAC) solution, consuming 0.001 mA, offers >40 dBm IIP3 linearity, 50 dB isolation, 17 dBm power handling. Device...
Read More »
High Frequency RF SOI Mixer covers 10-19 GHz range.
Covering a 10 to 19 GHz RF Frequency Range, the PE41901 Image Reject Mixer Demonstrates the High Frequency Capabilities of UltraCMOS® Technology SAN FRANCISCO – IMS 2016 - In booth #2129 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the addition of the UltraCMOS® PE41901 image reject mixer into its growing portfolio of...
Read More »X-Band MPAC-Beamforming Device covers 8-12 GHz range.
Designed for X-band radar applications, UltraCMOSÃ-® PE19601 integratesÃÂ 6-bit digital step attenuator,ÃÂ 10-bit digital phase shifter, RX/TX switching, andÃÂ digital serial interface onÃÂ 2.6 x 4.65 mm bare wirebond monolithic die. Monolithic phase and amplitude controller (MPAC) solution, consuming 0.001 mA, offers >40 dBm IIP3 linearity, 50 dB isolation,ÃÂ 17 dBm...
Read More »
High Frequency RF SOI Mixer covers 10-19 GHz range.
Covering a 10 to 19 GHz RF Frequency Range, the PE41901 Image Reject Mixer Demonstrates the High Frequency Capabilities of UltraCMOS-® Technology SAN FRANCISCO – IMS 2016 - In booth #2129 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the addition of the UltraCMOS® PE41901 image reject mixer into its growing...
Read More »Peregrine Semiconductor's MPAC-Doherty Device Optimizes RFHIC's GaN Amplifiers in IMS Booth Demonstration
The Live Demo Shows How Quickly and Reliably Peregrine's MPAC-Doherty Device Optimizes an RFHIC GaN Doherty Amplifier at 3.5 GHz SAN FRANCISCO - IMS 2016 - In booth #2129 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the demonstration of a Peregrine monolithic phase and amplitude controller (MPAC)-Doherty with an RFHIC...
Read More »Peregrine Semiconductor's MPAC-Doherty Device Optimizes RFHIC's GaN Amplifiers in IMS Booth Demonstration
The Live Demo Shows How Quickly and Reliably Peregrine's MPAC-Doherty Device Optimizes an RFHIC GaN Doherty Amplifier at 3.5 GHz SAN FRANCISCO - IMS 2016 - In booth #2129 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the demonstration of a Peregrine monolithic phase and amplitude controller (MPAC)-Doherty with an RFHIC...
Read More »Peregrine Semiconductor Wins 2016 ECN IMPACT Award
UltraCMOS-® PE42723 High Linearity RF Switch Named a Market Disruptor SAN DIEGO, Oct. 13, 2016 -- Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces that the UltraCMOS® PE42723 high linearity RF switch has won an ECN IMPACT Award in the market disruptor category. In addition, the PE42723 switch was named a finalist in the...
Read More »Peregrine Semiconductor Wins 2016 ECN IMPACT Award
UltraCMOSÃ-® PE42723 High Linearity RF Switch Named a Market Disruptor SAN DIEGO, Oct. 13, 2016 -- Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces that the UltraCMOSî PE42723 high linearity RF switch has won an ECN IMPACT Award in the market disruptor category. In addition, the PE42723 switch was named a finalist...
Read More »GaN FET Driver features internal dead-time control.
Designed to drive gates of high-side and low-side GaN FET in switching configuration, UltraCMOS-® PE29100 enables transistors to achieve their performance and speed potential. Half-bridge driver operates up to 33 MHz, handles voltages up to 80 V, and delivers short propagation delay of 8 ns. Device has rise time of 2.5 ns and fall time of 1.8 ns when driving 1,000 pF load. Offered as 2 x 1.6...
Read More »GaN FET Driver features internal dead-time control.
Designed to drive gates of high-side and low-side GaN FET in switching configuration, UltraCMOSÃ-® PE29100 enables transistors to achieve their performance and speed potential. Half-bridge driver operates up to 33 MHz, handles voltages up to 80 V, and delivers short propagation delay of 8 ns. Device has rise time of 2.5 ns and fall time of 1.8 ns when driving 1,000 pF load. Offered...
Read More »X-Band MPAC-Beamforming Device covers 8-12 GHz range.
Designed for X-band radar applications, UltraCMOS-® PE19601 integrates 6-bit digital step attenuator, 10-bit digital phase shifter, RX/TX switching, and digital serial interface on 2.6 x 4.65 mm bare wirebond monolithic die. Monolithic phase and amplitude controller (MPAC) solution, consuming 0.001 mA, offers >40 dBm IIP3 linearity, 50 dB isolation, 17 dBm power handling. Device...
Read More »
High Frequency RF SOI Mixer covers 10-19 GHz range.
Covering a 10 to 19 GHz RF Frequency Range, the PE41901 Image Reject Mixer Demonstrates the High Frequency Capabilities of UltraCMOS® Technology SAN FRANCISCO – IMS 2016 - In booth #2129 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the addition of the UltraCMOS® PE41901 image reject mixer into its growing portfolio of...
Read More »X-Band MPAC-Beamforming Device covers 8-12 GHz range.
Designed for X-band radar applications, UltraCMOSÃ-® PE19601 integratesÃÂ 6-bit digital step attenuator,ÃÂ 10-bit digital phase shifter, RX/TX switching, andÃÂ digital serial interface onÃÂ 2.6 x 4.65 mm bare wirebond monolithic die. Monolithic phase and amplitude controller (MPAC) solution, consuming 0.001 mA, offers >40 dBm IIP3 linearity, 50 dB isolation,ÃÂ 17 dBm...
Read More »
High Frequency RF SOI Mixer covers 10-19 GHz range.
Covering a 10 to 19 GHz RF Frequency Range, the PE41901 Image Reject Mixer Demonstrates the High Frequency Capabilities of UltraCMOS-® Technology SAN FRANCISCO – IMS 2016 - In booth #2129 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the addition of the UltraCMOS® PE41901 image reject mixer into its growing...
Read More »Peregrine Semiconductor's MPAC-Doherty Device Optimizes RFHIC's GaN Amplifiers in IMS Booth Demonstration
The Live Demo Shows How Quickly and Reliably Peregrine's MPAC-Doherty Device Optimizes an RFHIC GaN Doherty Amplifier at 3.5 GHz SAN FRANCISCO - IMS 2016 - In booth #2129 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the demonstration of a Peregrine monolithic phase and amplitude controller (MPAC)-Doherty with an RFHIC...
Read More »Peregrine Semiconductor's MPAC-Doherty Device Optimizes RFHIC's GaN Amplifiers in IMS Booth Demonstration
The Live Demo Shows How Quickly and Reliably Peregrine's MPAC-Doherty Device Optimizes an RFHIC GaN Doherty Amplifier at 3.5 GHz SAN FRANCISCO - IMS 2016 - In booth #2129 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the demonstration of a Peregrine monolithic phase and amplitude controller (MPAC)-Doherty with an RFHIC...
Read More »