Texas Instruments

Software

TI's SafeTI(TM) Software Development Process Assessed to Meet ISO 26262 and IEC 61508 Functional Safety Standards to ASIL D and SIL 3 Levels of Safety Integrity

New SafeTI Compliance Support Packages for Hercules™ MCU software components provide support for functional safety development and certification HOUSTON- — Today, Texas Instruments (TI) (NASDAQ: TXN) announced that its SafeTI™ functional safety software development process is now certified as suitable for development of ISO 26262 and IEC 61508 compliant software components. TI's process...

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Software

TI's SafeTI(TM) Software Development Process Assessed to Meet ISO 26262 and IEC 61508 Functional Safety Standards to ASIL D and SIL 3 Levels of Safety Integrity

New SafeTI Compliance Support Packages for Hercules™ MCU software components provide support for functional safety development and certification HOUSTON- — Today, Texas Instruments (TI) (NASDAQ: TXN) announced that its SafeTI™ functional safety software development process is now certified as suitable for development of ISO 26262 and IEC 61508 compliant software components. TI's process...

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TI to Drive Innovation for IoT, Industrial and Automotive Applications at Embedded World 2015
Architectural & Civil Engineering Products

TI to Drive Innovation for IoT, Industrial and Automotive Applications at Embedded World 2015

FREISING, Germany- – At embedded world in Nuremberg, Germany, Texas Instruments (TI) (NASDAQ: TXN) will demonstrate how its embedded processing and analog technologies are driving innovation in embedded system designs. Visitors to Hall 5, booth 208 on Feb. 24-26 can experience how TI technology is providing new capabilities for the Internet of Things (IoT), new experiences in industrial and...

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TI to Drive Innovation for IoT, Industrial and Automotive Applications at Embedded World 2015
Architectural & Civil Engineering Products

TI to Drive Innovation for IoT, Industrial and Automotive Applications at Embedded World 2015

FREISING, GermanyÂ- – At embedded world in Nuremberg, Germany, Texas Instruments (TI) (NASDAQ: TXN) will demonstrate how its embedded processing and analog technologies are driving innovation in embedded system designs. Visitors to Hall 5, booth 208 on Feb. 24-26 can experience how TI technology is providing new capabilities for the Internet of Things (IoT), new experiences in industrial...

Read More »
Communication Systems & Equipment

TI Demonstrates Leadership in Grid Infrastructure at DistribuTECH 2015

Experience the broadest portfolio of silicon solutions enabling a smarter grid SAN DIEGO,- – Texas Instruments (TI) (NASDAQ: TXN), a global provider of secure, economical and future-proof smart grid semiconductor systems, is demonstrating a full spectrum of end-to-end solutions for grid infrastructure at DistribuTECH 2015. From grid monitoring to protection to communications, TI provides...

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Communication Systems & Equipment

TI Demonstrates Leadership in Grid Infrastructure at DistribuTECH 2015

Experience the broadest portfolio of silicon solutions enabling a smarter grid SAN DIEGO,Â- – Texas Instruments (TI) (NASDAQ: TXN), a global provider of secure, economical and future-proof smart grid semiconductor systems, is demonstrating a full spectrum of end-to-end solutions for grid infrastructure at DistribuTECH 2015. From grid monitoring to protection to communications, TI provides...

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Nano Power Modules serve space-restricted applications.
Controls & Controllers

Nano Power Modules serve space-restricted applications.

Comprising 17 and 5 VÂ- nano power modules with 0.65, 1, and 2 A ratings, SIMPLE SWITCHER® products comes in sizes as small as 30 mm² for space-constrained applications. Component count simplifies design and increases system reliability, and EMI complies with CISPR 22 (Class B) radiated and conducted EMI standard. With output ripple at

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N-Channel Power MOSFETs achieve low resistance.
Electrical Equipment & Systems

N-Channel Power MOSFETs achieve low resistance.

Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.

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N-Channel Power MOSFETs achieve low resistance.
Electrical Equipment & Systems

N-Channel Power MOSFETs achieve low resistance.

Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.

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