Texas Instruments
Dallas, TX 75243
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TI's SafeTI(TM) Software Development Process Assessed to Meet ISO 26262 and IEC 61508 Functional Safety Standards to ASIL D and SIL 3 Levels of Safety Integrity
New SafeTI Compliance Support Packages for Hercules™ MCU software components provide support for functional safety development and certification HOUSTON- — Today, Texas Instruments (TI) (NASDAQ: TXN) announced that its SafeTI™ functional safety software development process is now certified as suitable for development of ISO 26262 and IEC 61508 compliant software components. TI's process...
Read More »TI's SafeTI(TM) Software Development Process Assessed to Meet ISO 26262 and IEC 61508 Functional Safety Standards to ASIL D and SIL 3 Levels of Safety Integrity
New SafeTI Compliance Support Packages for Hercules™ MCU software components provide support for functional safety development and certification HOUSTON- — Today, Texas Instruments (TI) (NASDAQ: TXN) announced that its SafeTI™ functional safety software development process is now certified as suitable for development of ISO 26262 and IEC 61508 compliant software components. TI's process...
Read More »TI to Drive Innovation for IoT, Industrial and Automotive Applications at Embedded World 2015
FREISING, Germany- – At embedded world in Nuremberg, Germany, Texas Instruments (TI) (NASDAQ: TXN) will demonstrate how its embedded processing and analog technologies are driving innovation in embedded system designs. Visitors to Hall 5, booth 208 on Feb. 24-26 can experience how TI technology is providing new capabilities for the Internet of Things (IoT), new experiences in industrial and...
Read More »TI to Drive Innovation for IoT, Industrial and Automotive Applications at Embedded World 2015
FREISING, GermanyÃ- – At embedded world in Nuremberg, Germany, Texas Instruments (TI) (NASDAQ: TXN) will demonstrate how its embedded processing and analog technologies are driving innovation in embedded system designs. Visitors to Hall 5, booth 208 on Feb. 24-26 can experience how TI technology is providing new capabilities for the Internet of Things (IoT), new experiences in industrial...
Read More »TI Demonstrates Leadership in Grid Infrastructure at DistribuTECH 2015
Experience the broadest portfolio of silicon solutions enabling a smarter grid SAN DIEGO,- – Texas Instruments (TI) (NASDAQ: TXN), a global provider of secure, economical and future-proof smart grid semiconductor systems, is demonstrating a full spectrum of end-to-end solutions for grid infrastructure at DistribuTECH 2015. From grid monitoring to protection to communications, TI provides...
Read More »TI Demonstrates Leadership in Grid Infrastructure at DistribuTECH 2015
Experience the broadest portfolio of silicon solutions enabling a smarter grid SAN DIEGO,Ã- – Texas Instruments (TI) (NASDAQ: TXN), a global provider of secure, economical and future-proof smart grid semiconductor systems, is demonstrating a full spectrum of end-to-end solutions for grid infrastructure at DistribuTECH 2015. From grid monitoring to protection to communications, TI provides...
Read More »Nano Power Modules serve space-restricted applications.
Comprising 17 and 5 V- nano power modules with 0.65, 1, and 2 A ratings, SIMPLE SWITCHER® products comes in sizes as small as 30 mm² for space-constrained applications. Component count simplifies design and increases system reliability, and EMI complies with CISPR 22 (Class B) radiated and conducted EMI standard. With output ripple at
Read More »Nano Power Modules serve space-restricted applications.
Comprising 17 and 5 VÃ- nano power modules with 0.65, 1, and 2 A ratings, SIMPLE SWITCHERîàproducts comes in sizes as small as 30 mmò for space-constrained applications. Component count simplifies design and increases system reliability, and EMI complies with CISPR 22 (Class B) radiated and conductedàEMI standard. With output ripple at
Read More »N-Channel Power MOSFETs achieve low resistance.
Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.
Read More »N-Channel Power MOSFETs achieve low resistance.
Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.
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