IXYS Corp.

IGBT Module is available in phase-leg topology.
Electronic Components & Devices

IGBT Module is available in phase-leg topology.

MII 400-12E4 Dual Pack IGBT module has ratings of 420 A Ic @ Tc = 25°C and 1200 V VCEs. Using 3rd generation Non-Punch-Through (NPTÂ-³) IGBT chips, module features 20% reduction in saturation voltage along with 20% reduction in switching losses. Associated fast recovery diodes are fabricated utilizing HiPerFRED(TM) technology that provides fast recovery with soft characteristics, low...

Read More »
Electronic Components & Devices

MOSFETs have plastic encapsulated housing.

ISOPLUS 227 package is mechanically interchangeable with SOT-227B package. It uses direct-copper-bonded alumina substrate to reduce weight while maintaining same isolation voltage and thermal fatigue capability of latter package. Products range from IXFE180N10 176A/100V rated MOSFET to IXFE36N100 33A/1000V MOSFET, to buck and boost configured IXFE48N50QD2 and IXFE48N50QD3 units. Both of these...

Read More »
Electronic Components & Devices

MOSFETs have high voltage depletion mode.

IXTP01N100D and IXTP02N50D MOSFETS are normally on at 0V gate bias and require negative gate bias to block current. IXTP01N100D is 1000V/100mA rated MOSFET with 110 ohm RDS(on) at VGS=0V, while IXTP02N50D is rated at 500V/200mA with RDS(on) of 30 ohms. Both devices are housed in TO-220 package allowing for high power dissipation. Applications include level shifters, current regulators, normally...

Read More »
Electronic Components & Devices

MOSFETs feature electrically isolated mounting.

IXUC100N055, IXUC200N055 and IXUC160N075 Trench Power MOSEFETs possess high current ratings of 100, 200 and 160 A, respectively. IXUC100N055 and the IXUC200N055 are rated at VDS (Drain Source Voltage) equal to 55V, while IXUC160N075 has VDS rating of 75V. All are housed in hole-less packages that conform to TO-220 outline. Frame is direct-copper-bonded alumina with 2500V isolation. Maximum...

Read More »

All Topics