Opto Diode Corporation

Opto Diode Presents OD-280-001 UVLEDs for Disinfection Applications
Electronic Components & Devices

Opto Diode Presents OD-280-001 UVLEDs for Disinfection Applications

The OD-280-001 Ultraviolet Light-Emitting Diodes are housed in TO-46 package. The units feature a half-intensity beam angle of 70°, forward voltage of 6.5V to 7.5V and capacitance of 350 pF. The LEDs can be operated in -30°C to +80°C temperature range and delivers total output power of 0.9 (minimum) and 1.2 mW (typical). They provide peak emission wavelengths in the range 275 nm to 285 nm.

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Opto Diode Presents OD-280-001 UVLEDs for Disinfection Applications
Electronic Components & Devices

Opto Diode Presents OD-280-001 UVLEDs for Disinfection Applications

The OD-280-001 Ultraviolet Light-Emitting Diodes are housed in TO-46 package. The units feature a half-intensity beam angle of 70°, forward voltage of 6.5V to 7.5V and capacitance of 350 pF. The LEDs can be operated in -30°C to +80°C temperature range and delivers total output power of 0.9 (minimum) and 1.2 mW (typical). They provide peak emission wavelengths in the range 275 nm to 285 nm.

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Latest AXUV63HS1 Circular Photodiode Features Minimum Reverse Breakdown Voltage of 160 V
Electronic Components & Devices

Latest AXUV63HS1 Circular Photodiode Features Minimum Reverse Breakdown Voltage of 160 V

The Opto Diode’s AXUV63HS1 Circular Photodiode is designed for electron detection applications and has an active area of 9 mm diameter. The unit exhibits a rise time of 10 nsec and a maximum dark current of 100 nA. It is offered with a cover plate that protects photodiode chip and wire bonds and has a lead soldering temperature of 260°C. The AXUV63HS1 can be stored and operated in -10°C to...

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Latest AXUV63HS1 Circular Photodiode Features Minimum Reverse Breakdown Voltage of 160 V
Electronic Components & Devices

Latest AXUV63HS1 Circular Photodiode Features Minimum Reverse Breakdown Voltage of 160 V

The Opto Diode’s AXUV63HS1 Circular Photodiode is designed for electron detection applications and has an active area of 9 mm diameter. The unit exhibits a rise time of 10 nsec and a maximum dark current of 100 nA. It is offered with a cover plate that protects photodiode chip and wire bonds and has a lead soldering temperature of 260°C. The AXUV63HS1 can be stored and operated in -10°C to...

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Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV
Sensors, Monitors & Transducers

Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV

AXUV20HS1 Circular Photodetectors are suitable for high-speed detection of low-energy electrons or X-rays. The units have a rise time of 3.5 nsec and a soldering temperature of 260°C. The detectors can be operated in -10°C to +40°C ambient temperature and come with a circular active area of 5 mm diameter. They are offered with protective cover plate that safeguards photodiode chip and wire...

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Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV
Sensors, Monitors & Transducers

Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV

AXUV20HS1 Circular Photodetectors are suitable for high-speed detection of low-energy electrons or X-rays. The units have a rise time of 3.5 nsec and a soldering temperature of 260°C. The detectors can be operated in -10°C to +40°C ambient temperature and come with a circular active area of 5 mm diameter. They are offered with protective cover plate that safeguards photodiode chip and wire...

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New AXUV20A Circular Photodetectors Feature a Shunt Resistance of 100 MOhm
Sensors, Monitors & Transducers

New AXUV20A Circular Photodetectors Feature a Shunt Resistance of 100 MOhm

The AXUV20A Circular Photodetectors come with an active area of 5.5 mm diameter with a reverse breakdown voltage of 5 V. The units offer a typical capacitance of 4 nF and a maximum capacitance of 10 nF with a rise time of 2 µsec. They can be operated in -10°C to +40°C in ambient environments and are designed for radiation, electron, and photon response in UV, EUV, through visible and...

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New AXUV20A Circular Photodetectors Feature a Shunt Resistance of 100 MOhm
Sensors, Monitors & Transducers

New AXUV20A Circular Photodetectors Feature a Shunt Resistance of 100 MOhm

The AXUV20A Circular Photodetectors come with an active area of 5.5 mm diameter with a reverse breakdown voltage of 5 V. The units offer a typical capacitance of 4 nF and a maximum capacitance of 10 nF with a rise time of 2 µsec. They can be operated in -10°C to +40°C in ambient environments and are designed for radiation, electron, and photon response in UV, EUV, through visible and...

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