GeneSiC Semiconductor Inc.

Latest SiC MOSFETs are UIL Tested
Electronic Components & Devices

Latest SiC MOSFETs are UIL Tested

Come with RDS(ON) levels ranging from 20 mΩ to 350 mΩ. Feature softest temperature dependence of on-state resistance to offer very low conduction losses at all temperatures. Designed to be driven at +15V / -5V gate drive and offer broadest compatibility with existing commercial IGBT and SiC MOSFET gate drivers.

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Latest SiC MOSFETs are UIL Tested
Electronic Components & Devices

Latest SiC MOSFETs are UIL Tested

Come with RDS(ON) levels ranging from 20 mΩ to 350 mΩ. Feature softest temperature dependence of on-state resistance to offer very low conduction losses at all temperatures. Designed to be driven at +15V / -5V gate drive and offer broadest compatibility with existing commercial IGBT and SiC MOSFET gate drivers.

Read More »

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