Transphorm, Inc.
Goleta, CA 93117
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Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites
THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...
Read More »Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites
THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...
Read More »Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.
Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...
Read More »Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.
Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)Ã- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...
Read More »Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales
New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...
Read More »Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales
New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...
Read More »Gallium Nitride Transistor (600 V) comes in TO-247 package.
Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.
Read More »Gallium Nitride Transistor (600 V) comes in TO-247 package.
Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.
Read More »Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices
Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market GOLETA, Calif.,- -- Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching...
Read More »Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices
Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market GOLETA, Calif.,Ã- -- Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching...
Read More »Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites
THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...
Read More »Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites
THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...
Read More »Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.
Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...
Read More »Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.
Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)Ã- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...
Read More »Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales
New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...
Read More »Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales
New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...
Read More »Gallium Nitride Transistor (600 V) comes in TO-247 package.
Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.
Read More »Gallium Nitride Transistor (600 V) comes in TO-247 package.
Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.
Read More »Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices
Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market GOLETA, Calif.,- -- Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching...
Read More »Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices
Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market GOLETA, Calif.,Ã- -- Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching...
Read More »