Transphorm, Inc.

Electronic Components & Devices

Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites

THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...

Read More »
Electronic Components & Devices

Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites

THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...

Read More »
Electronic Components & Devices

Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.

Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...

Read More »
Electronic Components & Devices

Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.

Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)Â- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...

Read More »
Architectural & Civil Engineering Products

Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales

New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...

Read More »
Architectural & Civil Engineering Products

Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales

New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...

Read More »
Electronic Components & Devices

Gallium Nitride Transistor (600 V) comes in TO-247 package.

Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.

Read More »
Electronic Components & Devices

Gallium Nitride Transistor (600 V) comes in TO-247 package.

Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.

Read More »
Controls & Controllers

Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices

Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market GOLETA, Calif.,-  -- Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching...

Read More »
Controls & Controllers

Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices

Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market GOLETA, Calif.,Â-  -- Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching...

Read More »
Electronic Components & Devices

Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites

THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...

Read More »
Electronic Components & Devices

Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites

THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...

Read More »
Electronic Components & Devices

Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.

Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...

Read More »
Electronic Components & Devices

Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.

Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)Â- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...

Read More »
Architectural & Civil Engineering Products

Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales

New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...

Read More »
Architectural & Civil Engineering Products

Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales

New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...

Read More »
Electronic Components & Devices

Gallium Nitride Transistor (600 V) comes in TO-247 package.

Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.

Read More »
Electronic Components & Devices

Gallium Nitride Transistor (600 V) comes in TO-247 package.

Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.

Read More »
Controls & Controllers

Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices

Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market GOLETA, Calif.,-  -- Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching...

Read More »
Controls & Controllers

Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices

Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market GOLETA, Calif.,Â-  -- Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching...

Read More »

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