LatticePower

Lattice Power Receives IES Recognition for World's First High Output GaN-On-Silicon LED PAR38 Lamp
Architectural & Civil Engineering Products

Lattice Power Receives IES Recognition for World's First High Output GaN-On-Silicon LED PAR38 Lamp

PALO ALTO, Calif.,Â- – Lattice Power, the first company to commercialize high performance, low cost GaN-on-Silicon LEDs, announced today that its new PAR38 LED lamp has been recognized by the Illuminating Engineering Society Progress Committee as providing an important advancement in lighting. The company's new proprietary GaN-on-Silicon LED PAR38 LED lamp delivers outstanding...

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Architectural & Civil Engineering Products

LED Light Fixtures utilize optimized GaN-on-Silicon technology.

GaN-on-Silicon LED track, highbay, and flood light fixturesÂ- offer optimized light density and thermal dissipation. Construction overcomes defects in material, cracking on wafer, and poor quantum efficiency of epi-layer resulting from material lattice mismatch and thermal expansion mismatch between GaN thin film and silicon substrate. System-in-package combines GaN-on-Si LEDs with...

Read More »
Lattice Power Receives IES Recognition for World's First High Output GaN-On-Silicon LED PAR38 Lamp
Architectural & Civil Engineering Products

Lattice Power Receives IES Recognition for World's First High Output GaN-On-Silicon LED PAR38 Lamp

PALO ALTO, Calif.,Â- – Lattice Power, the first company to commercialize high performance, low cost GaN-on-Silicon LEDs, announced today that its new PAR38 LED lamp has been recognized by the Illuminating Engineering Society Progress Committee as providing an important advancement in lighting. The company's new proprietary GaN-on-Silicon LED PAR38 LED lamp delivers outstanding...

Read More »
Architectural & Civil Engineering Products

LED Light Fixtures utilize optimized GaN-on-Silicon technology.

GaN-on-Silicon LED track, highbay, and flood light fixturesÂ- offer optimized light density and thermal dissipation. Construction overcomes defects in material, cracking on wafer, and poor quantum efficiency of epi-layer resulting from material lattice mismatch and thermal expansion mismatch between GaN thin film and silicon substrate. System-in-package combines GaN-on-Si LEDs with...

Read More »

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