Vishay
Malvern, PA 19355
Braking/Crowbar Resistors have compact and modular design.
Devices Feature Industry-High Pulse Energy Capability to 3.46 MJ and Pulse Current Capability to 12 kA MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new series of stainless steel braking/crowbar resistors featuring industry-high pulse energy capability up to 3.46 MJ and pulse current capability up to 12 kA for alternative energy and other heavy-duty applications....
Read More »Miniature IR Receivers suit remote control applications.
With minimum irradiance of 0.12 mW/mÃ-², TSOP36... Series is available in 5 automatic gain control versions for short and long burst codes. Miniature surface mount units incorporate optical filter against IR 3D TV signals and other noise. Specified for operation from 2.5–5.5 V with transmission range up to 45 m, receivers are available for carrier frequencies from 30–56 kHz and offer low...
Read More »Vishay Intertechnology's HiRel Systems Division Earns ISO 14001:2004 Certification for Marshall, Minn., Plant
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the company's HiRel Systems Division has earned the International Organization for Standardization (ISO) 14001:2004 certification for its Marshall, Minn., plant. The ISO 14001:2004 registration audit was conducted by UL DQS Inc., and the site was certified for the design and manufacture of magnetic devices. ISO...
Read More »Vishay Intertechnology's HiRel Systems Division Earns ISO 14001:2004 Certification for Marshall, Minn., Plant
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the company's HiRel Systems Division has earned the International Organization for Standardization (ISO) 14001:2004 certification for its Marshall, Minn., plant. The ISO 14001:2004 registration audit was conducted by UL DQS Inc., and the site was certified for the design and manufacture of magnetic devices. ISO...
Read More »ESD Protection Diodes provide surge capability of 200 W.
For Portable Electronics, Devices Offer Low 1 mm Profile, Low-Noise Technology, and Fast Response Times MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced a new series of surface-mount ESD protection diodes in the low-profile SMF package. For portable electronics, SMFxxA series devices provide high surge capability of 200 W at 10/1000 µs. With their low 1 mm profile,...
Read More »Thin Film Chip Resistor Arrays come in 073, 074 case sizes.
Arrays Offer up to Eight Resistors of Different Ohmic Values With Tolerance Ratios to 0.01 % and TCR Tracking to 1 ppm/°C MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that it has extended its PRA series of high-precision thin film surface-mount wraparound chip resistor arrays to the compact 073 and 074 case sizes. The new PRA073 and PRA074 are the industry's smallest...
Read More »ESD Protection Diodes provide surge capability of 200 W.
For Portable Electronics, Devices Offer Low 1 mm Profile, Low-Noise Technology, and Fast Response Times MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced a new series of surface-mount ESD protection diodes in the low-profile SMF package. For portable electronics, SMFxxA series devices provide high surge capability of 200 W at 10/1000 -µs. With their low 1 mm profile,...
Read More »Thin Film Chip Resistor Arrays come in 073, 074 case sizes.
Arrays Offer up to Eight Resistors of Different Ohmic Values With Tolerance Ratios to 0.01 % and TCR Tracking to 1 ppm/-°C MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that it has extended its PRA series of high-precision thin film surface-mount wraparound chip resistor arrays to the compact 073 and 074 case sizes. The new PRA073 and PRA074 are the industry's...
Read More »P-Channel Gen III Power MOSFET measures 2.4 x 2.0 x 0.4 mm.
Supplied in 30-pin CSP MICRO FOOT-® package with 0.4 mm profile, Si8851EDB increases efficiency while conserving space in mobile computing devices. This -20 V TrenchFET® p-channel Gen III power MOSFET offers on-resistance of 8.0 and 11.0 mΩ at respective gate drive of -4.5 and -2.5 V. Optimized for load and battery switches in power management applications for tablets, smartphones, and...
Read More »P-Channel Gen III Power MOSFET measures 2.4 x 2.0 x 0.4 mm.
Supplied in 30-pin CSP MICRO FOOT-® package with 0.4 mm profile, Si8851EDB increases efficiency while conserving space in mobile computing devices. This -20 V TrenchFET® p-channel Gen III power MOSFET offers on-resistance of 8.0 and 11.0 mΩ at respective gate drive of -4.5 and -2.5 V. Optimized for load and battery switches in power management applications for tablets, smartphones, and...
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