X-Fab
Lubbock, TX 79415
New XT018 BCD-on-SOI Platform Comes with Non-Volatile Memory Functions
Offers SONOS technology that supports operation at temperatures from -40°C up to 175°C, in compliance with automotive AEC-Q100 grade-0 quality standards. Includes single block of 32kBytes of Flash memory, plus 4kbits of EEPROM capacity. Can operate at 1.8V single-voltage and accessed independently while sharing the same peripheral interface, thereby achieving a best-in-class footprint.
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New High-Voltage NMOS/PMOS Devices are Based on XT018 BCD-on-SOI Platform with Deep Trench Isolation
Provides more flexible voltage offering up to 200V to support the battery cells. Operating voltages from 70V to 125V. Support automotive AEC-Q100 Grade 0 products.
Read More »
New SPAD and APD Products by X-FAB Suits for Deployment in Automotive Systems
Applications are proximity sensing, LiDAR, time of flight (ToF), medical imaging (CT and PET) and scientific research. Offers low dark count rate (<100 counts/s/µm²) and wavelengths are 40% at 400nm. Provides strong linear gain figure and fully scalable.
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New RISC-V System on Chip Based on Ultra-low Power PicoRV32 RISC-V Core
Brings the power of open innovation and at the same time protecting significant investment in proprietary IP. Bench-tested to operate at 100MHz and based on simulations it can operate at up to 150MHz. Manufacture on X-FAB’s flexible 180nm 6-metal XH018 process.
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New Galvanic Isolation Technology from X-FAB Electrically Separates Circuits to Improve Noise Immunity
The Galvanic Isolation Semiconductor Process offers an operating temperature up to 175°C. The process is tested up to 6,000 Vrms at 10,000 VDC and 50 Hz. and is suitable for applications such as data communication in field bus systems and battery management systems. It supports working voltages up to 1.7 kV and technology produces uninterrupted barrier layer with 0 ppm residual contamination.
Read More »
New XT018 BCD-on-SOI Platform Comes with Non-Volatile Memory Functions
Offers SONOS technology that supports operation at temperatures from -40°C up to 175°C, in compliance with automotive AEC-Q100 grade-0 quality standards. Includes single block of 32kBytes of Flash memory, plus 4kbits of EEPROM capacity. Can operate at 1.8V single-voltage and accessed independently while sharing the same peripheral interface, thereby achieving a best-in-class footprint.
Read More »X-FAB Strengthens its Foundry Service Cooperation with EUROPRACTICE
Tessenderlo, Belgium – October 2, 2019 X-FAB Silicon Foundries SE, the leading analog/mixed-signal and specialty foundry has announced that it is broadening the scope of its cooperation with the EUROPRACTICE Consortium which counts high-profile institutions such as Fraunhofer Institute for Integrated Circuits and imec as members. Initiated by the European Commission almost 25 years ago, the...
Read More »X-FAB Brings 180nm Automotive-Qualified Semiconductor Process to Its French Manufacturing Site
Expands capacity for high-voltage XH018 technology and enables dual sourcing Tessenderlo, Belgium – July 25, 2019 X-FAB Silicon Foundries, the leading analog/mixed-signal and specialty foundry, has announced that its popular high-voltage 180nm CMOS semiconductor process (XH018) (https://www.xfab.com/technology/cmos/018-um-xh018/) is now available for automotive applications via the company’s...
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New High-Voltage NMOS/PMOS Devices are Based on XT018 BCD-on-SOI Platform with Deep Trench Isolation
Provides more flexible voltage offering up to 200V to support the battery cells. Operating voltages from 70V to 125V. Support automotive AEC-Q100 Grade 0 products.
Read More »
New SPAD and APD Products by X-FAB Suits for Deployment in Automotive Systems
Applications are proximity sensing, LiDAR, time of flight (ToF), medical imaging (CT and PET) and scientific research. Offers low dark count rate (<100 counts/s/µm²) and wavelengths are 40% at 400nm. Provides strong linear gain figure and fully scalable.
Read More »
New RISC-V System on Chip Based on Ultra-low Power PicoRV32 RISC-V Core
Brings the power of open innovation and at the same time protecting significant investment in proprietary IP. Bench-tested to operate at 100MHz and based on simulations it can operate at up to 150MHz. Manufacture on X-FAB’s flexible 180nm 6-metal XH018 process.
Read More »
New Galvanic Isolation Technology from X-FAB Electrically Separates Circuits to Improve Noise Immunity
The Galvanic Isolation Semiconductor Process offers an operating temperature up to 175°C. The process is tested up to 6,000 Vrms at 10,000 VDC and 50 Hz. and is suitable for applications such as data communication in field bus systems and battery management systems. It supports working voltages up to 1.7 kV and technology produces uninterrupted barrier layer with 0 ppm residual contamination.
Read More »X-FAB Doubles 6-Inch SiC Foundry Capacity in Response to Customer Demand
Tessenderlo, Belgium – August 30, 2018 - X-FAB Silicon Foundries SE, the leading analog/mixed-signal and specialty foundry group, today announced plans to double their 6-inch Silicon Carbide (SiC) process capacity at its fab in Lubbock, Texas in response to increased customer demand for high efficiency power semiconductor devices. In preparation for doubling capacity, X-FAB Texas has purchased...
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