X-Fab
Lubbock, TX 79415
New Flash Memory Capability Leverages SONOS Technology
Withstands operation across a -40°C to 175°C temperature range. Supplied in a 32 KByte array size, following an 8K x 39-bit configuration, with a 32-bit data bus. capable of running on a single 1.8 V power supply, it is well-suited for low-power designs.
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Latest APDs and SPADs Devices Incorporate Trigger Diode
Allows precise, real-time on-chip breakdown voltage detection without an external light source. Include active quenching circuitry that allow to be made ready for further light detection. Ideal for applications like computer tomography and fluorescence detection within the medical sector.
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New Prototyping Service Supports Implementation of Microfluidic Structures
Can embark on innovative silicon-based microfluidic projects regardless of their size or capabilities. Optimized for applications requiring high signal-to-noise ratios and can carry out numerous microfluidic post-processing activities. Ideal for lab-on-a-chip, DNA sequencing and synthesis, rare cell sorting, medical implants, pharmaceutical research, drug administering, and food safety testing...
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I-fuse OTP Memory on XR013 RF Platform Integrates Digital Content with Analog Trimming or Data Storage
Attopsemi I-fuse OTP memory on the XR013 RF platform helps RF products to address different regional market requirements via a single chip design. Allow customers to benefit from the incorporation of a compact and robust OTP block into the core XR013 technology module, but without requiring additional processing. I-fuse™ available with high reliability, high quality and full testable IP as well...
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X-FAB Expands Foundry Offering for Silicon-based Microfluidics
Enhanced process capabilities enable faster time-to-market of Smart Integrated Systems Tessenderlo, Belgium – May 19, 2020 -- X-FAB Silicon Foundries SE, in order to address heightening demands, has taken steps to simplify the integration of microfluidic elements with CMOS and SOI dies. Part of its extensive MEMS-oriented technology offering, the company is now able to provide a large variety...
Read More »X-FAB's New In-House SiC Epitaxy Capability Offers 26k Wafers per Month
New capabilities offer customers access to high-quality and cost-effective foundry solutions. Able to achieve high uniformity of the epitaxial layer thereby increasing device performance parameters and the overall yield. Allow customers to import their SiC projects into a stable and trusted, fully automotive-qualified fab environment.
Read More »
Enhanced 180nm BCD-on-SOI Technology Platform Comes with Medium-Voltage Transistors
Supports automotive AEC-Q100 grade 0 designs and delivers on-resistance (Rdson) figures combined with robust safe-operating areas for Rdson, Idsat and Vth. Advantages include virtual latch-up free circuits, strong EMC resilience, lowest substrate coupling for fast switching DC/DC converters and simplified handling of below ground transients. Cover voltages from 12V to 32V and is ideal for Smart...
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New XT018 BCD-on-SOI Platform Comes with Non-Volatile Memory Functions
Offers SONOS technology that supports operation at temperatures from -40°C up to 175°C, in compliance with automotive AEC-Q100 grade-0 quality standards. Includes single block of 32kBytes of Flash memory, plus 4kbits of EEPROM capacity. Can operate at 1.8V single-voltage and accessed independently while sharing the same peripheral interface, thereby achieving a best-in-class footprint.
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New High-Voltage NMOS/PMOS Devices are Based on XT018 BCD-on-SOI Platform with Deep Trench Isolation
Provides more flexible voltage offering up to 200V to support the battery cells. Operating voltages from 70V to 125V. Support automotive AEC-Q100 Grade 0 products.
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New SPAD and APD Products by X-FAB Suits for Deployment in Automotive Systems
Applications are proximity sensing, LiDAR, time of flight (ToF), medical imaging (CT and PET) and scientific research. Offers low dark count rate (
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New Flash Memory Capability Leverages SONOS Technology
Withstands operation across a -40°C to 175°C temperature range. Supplied in a 32 KByte array size, following an 8K x 39-bit configuration, with a 32-bit data bus. capable of running on a single 1.8 V power supply, it is well-suited for low-power designs.
Read More »X-FAB Enters into Collaboration with IHP to Progress SiGe BiCMOS Technology
Tessenderlo, Belgium and Frankfurt/Oder, Germany – March 17, 2021 - X-FAB Silicon Foundries and IHP - Leibniz Institute for High Performance Microelectronics have announced a major industry-academic partnership. The objective of the cooperation between these two bodies, which brings together X-FAB’s proficiency in semiconductor manufacture with IHP’s wireless communication expertise, is to...
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Latest APDs and SPADs Devices Incorporate Trigger Diode
Allows precise, real-time on-chip breakdown voltage detection without an external light source. Include active quenching circuitry that allow to be made ready for further light detection. Ideal for applications like computer tomography and fluorescence detection within the medical sector.
Read More »
New Prototyping Service Supports Implementation of Microfluidic Structures
Can embark on innovative silicon-based microfluidic projects regardless of their size or capabilities. Optimized for applications requiring high signal-to-noise ratios and can carry out numerous microfluidic post-processing activities. Ideal for lab-on-a-chip, DNA sequencing and synthesis, rare cell sorting, medical implants, pharmaceutical research, drug administering, and food safety testing...
Read More »
I-fuse OTP Memory on XR013 RF Platform Integrates Digital Content with Analog Trimming or Data Storage
Attopsemi I-fuse OTP memory on the XR013 RF platform helps RF products to address different regional market requirements via a single chip design. Allow customers to benefit from the incorporation of a compact and robust OTP block into the core XR013 technology module, but without requiring additional processing. I-fuse™ available with high reliability, high quality and full testable IP as well...
Read More »Jörg Doblaski Takes on the Role of X-FAB CTO
Tessenderlo, Belgium – July 1, 2020 - X-FAB Silicon Foundries SE has today announced the appointment of Jörg Doblaski as its new Chief Technology Officer (CTO). He fills the role of former CTO Dr. Jens Kosch, who is becoming an X-FAB Fellow and will serve as an adviser to the company’s CEO Rudi De Winter. Doblaski joined X-FAB in 2004 and since then has held various positions in engineering...
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X-FAB Expands Foundry Offering for Silicon-based Microfluidics
Enhanced process capabilities enable faster time-to-market of Smart Integrated Systems Tessenderlo, Belgium – May 19, 2020 -- X-FAB Silicon Foundries SE, in order to address heightening demands, has taken steps to simplify the integration of microfluidic elements with CMOS and SOI dies. Part of its extensive MEMS-oriented technology offering, the company is now able to provide a large variety...
Read More »X-FAB and EUROPRACTICE Choose Innovative Solution to Help the Visually Impaired as 2020 MEMS Design Contest Winner
Tessenderlo and Leuven, Belgium – May 7, 2020 - X-FAB, along with technology partner EUROPRACTICE, today announced the winning project in their competition to encourage further MEMS-based innovation. The triumphant project, entitled “Capacitive MEMS Sensors for High-Resolution Interactive Vibrotactile Displays”, was submitted by a team of engineers from the University of Bath. Entrants from...
Read More »X-FAB's New In-House SiC Epitaxy Capability Offers 26k Wafers per Month
New capabilities offer customers access to high-quality and cost-effective foundry solutions. Able to achieve high uniformity of the epitaxial layer thereby increasing device performance parameters and the overall yield. Allow customers to import their SiC projects into a stable and trusted, fully automotive-qualified fab environment.
Read More »
Enhanced 180nm BCD-on-SOI Technology Platform Comes with Medium-Voltage Transistors
Supports automotive AEC-Q100 grade 0 designs and delivers on-resistance (Rdson) figures combined with robust safe-operating areas for Rdson, Idsat and Vth. Advantages include virtual latch-up free circuits, strong EMC resilience, lowest substrate coupling for fast switching DC/DC converters and simplified handling of below ground transients. Cover voltages from 12V to 32V and is ideal for Smart...
Read More »