Marktech Optoelectronics

Marktech Optoelectronics Announces Multi-Wavelength Emitters, Detectors and LEDs for Wearables
Electronic Components & Devices

Marktech Optoelectronics Announces Multi-Wavelength Emitters, Detectors and LEDs for Wearables

December 3, 2018 – Latham, NY, USA – Marktech Optoelectronics, Inc. (www.marktechopto.com)(Marktech), a privately-held and veteran-owned leading designer and manufacturer of standard and custom optoelectronics components and assemblies, including UV, visible, near-infrared (NIR), and short wavelength infrared (SWIR) emitters, detectors, InP epiwafers and other materials, today announced its...

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Marktech Optoelectronics Announces Multi-Wavelength Emitters, Detectors and LEDs for Wearables
Electronic Components & Devices

Marktech Optoelectronics Announces Multi-Wavelength Emitters, Detectors and LEDs for Wearables

December 3, 2018 – Latham, NY, USA – Marktech Optoelectronics, Inc. (www.marktechopto.com)(Marktech), a privately-held and veteran-owned leading designer and manufacturer of standard and custom optoelectronics components and assemblies, including UV, visible, near-infrared (NIR), and short wavelength infrared (SWIR) emitters, detectors, InP epiwafers and other materials, today announced its...

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Marktech Releases InGaAs/InP PIN Photodiodes in Hermetically Sealed 3-Pin TO-46 Metal Can
Electronic Components & Devices

Marktech Releases InGaAs/InP PIN Photodiodes in Hermetically Sealed 3-Pin TO-46 Metal Can

The Model MTPD1346D-xx Series InGaAs/InP PIN Photodiodes convert broadband light into photocurrents within VIS-SWIR range. The units offer a spectral range of 0.6 μm to 1.7 μm and dark current with an efficiency of 0.6A/W. The photodiodes are offered in active area sizes from 0.1 mm to 3.0 mm in a metal can with flat lens cap and a choice of either thru-hole or surface mounting. They are...

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Marktech Releases InGaAs/InP PIN Photodiodes in Hermetically Sealed 3-Pin TO-46 Metal Can
Electronic Components & Devices

Marktech Releases InGaAs/InP PIN Photodiodes in Hermetically Sealed 3-Pin TO-46 Metal Can

The Model MTPD1346D-xx Series InGaAs/InP PIN Photodiodes convert broadband light into photocurrents within VIS-SWIR range. The units offer a spectral range of 0.6 μm to 1.7 μm and dark current with an efficiency of 0.6A/W. The photodiodes are offered in active area sizes from 0.1 mm to 3.0 mm in a metal can with flat lens cap and a choice of either thru-hole or surface mounting. They are...

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Latest Series 4 UV-Enhanced PIN Photodiodes Offer 300 nm to 1100 nm Wavelength Range
Electronic Components & Devices

Latest Series 4 UV-Enhanced PIN Photodiodes Offer 300 nm to 1100 nm Wavelength Range

The Series 4 UV-Enhanced PIN Photodiodes are available in TO-46 (3-pin) or TO-5 (2-pin and 3-pin) metal can package. The units provide measurements in UV and blue-green spectral range or at 365 nm. They are compliant to REACH and RoHS standards and are suitable for applications such as color meters, currency authentication, photometry, spectroscopy equipment and analytical systems. The...

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Latest Series 4 UV-Enhanced PIN Photodiodes Offer 300 nm to 1100 nm Wavelength Range
Electronic Components & Devices

Latest Series 4 UV-Enhanced PIN Photodiodes Offer 300 nm to 1100 nm Wavelength Range

The Series 4 UV-Enhanced PIN Photodiodes are available in TO-46 (3-pin) or TO-5 (2-pin and 3-pin) metal can package. The units provide measurements in UV and blue-green spectral range or at 365 nm. They are compliant to REACH and RoHS standards and are suitable for applications such as color meters, currency authentication, photometry, spectroscopy equipment and analytical systems. The...

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New Silicon Avalanche Photodiodes Feature Low Currents and Higher Sensitivities
Electronic Components & Devices

New Silicon Avalanche Photodiodes Feature Low Currents and Higher Sensitivities

New Silicon avalanche photodiodes are available in custom and standard sizes. They can be purchased in volumes from prototype to OEM. The photodiodes have low-level light and pulse detections of wavelengths between 400 nm and 1100 nm. They have either a 230 µm or 500 µm active diameter, as well as optical sensitivity optimizations for 800 nm or 905 nm peak responses. They feature extremely fast...

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New Silicon Avalanche Photodiodes Feature Low Currents and Higher Sensitivities
Electronic Components & Devices

New Silicon Avalanche Photodiodes Feature Low Currents and Higher Sensitivities

New Silicon avalanche photodiodes are available in custom and standard sizes. They can be purchased in volumes from prototype to OEM. The photodiodes have low-level light and pulse detections of wavelengths between 400 nm and 1100 nm. They have either a 230 µm or 500 µm active diameter, as well as optical sensitivity optimizations for 800 nm or 905 nm peak responses. They feature extremely fast...

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Photodetectors offer custom chip packaging.
Electronic Components & Devices

Photodetectors offer custom chip packaging.

Featuring spectral sensitivity of 400–1,100 nm, Silicon Detectors are suited for applications requiring high speed, consistency, and reliability, such as optical communications, medical diagnostics, barcode readers, and missile guidance. Die can be placed in variety of packages, from metal can TO-5, TO-8, and TO-18, to surface mount COB, flex circuits, and standard 3 mm and 5 mm plastic...

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Photodetectors offer custom chip packaging.
Electronic Components & Devices

Photodetectors offer custom chip packaging.

Featuring spectral sensitivity of 400–1,100 nm, Silicon Detectors are suited for applications requiring high speed, consistency, and reliability, such as optical communications, medical diagnostics, barcode readers, and missile guidance. Die can be placed in variety of packages, from metal can TO-5, TO-8, and TO-18, to surface mount COB, flex circuits, and standard 3 mm and 5 mm plastic...

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