Stratedge Corporation
Suite C
Santee, CA 92071
Getting a Good Signal: StratEdge's High-Performance Power Amplifier Packages on the Red Planet
Currently en route, again, on NASA's Mars 2020 Perseverance Rover Santee, Calif. — 4 February 2021 — StratEdge Corporation, leader in the design and production of high-performance semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces that its SE20 power amplifier packages are playing a key role in transmitting signals with information gathered from...
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StratEdge Molded Ceramic: Straightforward Packaging Solutions for GaN Used in Mil-Std Applications
Accommodate frequencies up to 18 GHz Santee, Calif. — 18 November 2020 — StratEdge Corporation, leader in the design and production of high-performance semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces that its off-the-shelf line of molded ceramic packages can be configured to meet the requirements for chips with frequencies up to 18 GHz,...
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StratEdge to Display New Broadband QFNs and Revolutionary Eutectic Die Attach for GaN Devices at IMAPS Virtual 2020
~ Make an appointment to talk with our technical experts Santee, Calif. — 5 October 2020 — StratEdge Corporation, leader in the design, production, and assembly of high-frequency and high-power semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces that StratEdge technical experts will be available to discuss the best types of packaging and...
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Latest Ceramic and Molded Ceramic Packages Support 5G Infrastructure
Protect high-power laterally-diffused metal-oxide semiconductor (LDMOS), gallium arsenide (GaAs), silicon carbide (SiC), and gallium nitride (GaN) devices. Uses copper-molybdenum-copper (CMC) bases to dissipate heat, increasing the power output the chip achieves and enabling the device to operate at cooler temperatures. Device is mounted directly onto layer of thermally-conductive copper and...
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StratEdge Offers Assembly Services to Maximize Power Output of High Frequency Devices
Offers services for attaching gallium nitride and other high-frequency, high-power devices using gold-tin and gold-silicon onto CMC tabs. Optimizes chip performance and provides an effective way to dissipate heat to avoid overheating and failures during normal operation. Creates reliable solder joint with good thermal dissipation.
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New Packaging and Assembly Services Includes Ribbon Bonding Capability
Provides automatic and manual wedge wire bonding. Full packaging as well as chip-on-tab where StratEdge provides the heat spreading tabs. Specializes in RF and microwave devices, including GaN and gallium arsenide.
Read More »
New Semiconductor Packages Operate from DC to 63+ GHz
Dissipates heat from compound semiconductor devices such as gallium nitride gallium arsenide and silicon carbide. Enables compound semiconductor devices to meet critical requirements of markets such as telecom, mixed signal and MEMS.
Read More »
New Thermally-efficient Packages Operate Efficiently at Frequencies as High as 63+ GHz
Enable compound semiconductor devices to meet the critical requirements of markets. Offers complete automated assembly services including gold-tin solder die attach. Ideal for compound semiconductor devices, such as gallium nitride (GaN) and gallium arsenide (GaAs).
Read More »
StratEdge to Display High-Performance DC-63GHz Packages at IMAPS Device Conference at Booth 62
San Diego, CA - 1 March 2018 - StratEdge Corporation, leader in the design, production, and assembly of high performance semiconductor packages for microwave, millimeter-wave, and high speed digital devices, announces that it will display its high-frequency and very high-power device packages in booth 62 at the IMAPS Device Conference. The conference is being held March 6 and 7th at WekoPa Resort...
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Elecsys to Feature StratEdge High-performance Semiconductor Packages at IEEE COMCAS
StratEdge Corporation, leader in the design and production of high performance semiconductor packages for microwave, millimeter-wave, and high speed digital devices, announces that its packages for high-frequency and very high power devices will be featured by Elecsys, LLC at IEEE COMCAS, November 13-15, 2017 in Tel Aviv, Israel. In addition to StratEdge products, Elecsys will be showing J...
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Getting a Good Signal: StratEdge's High-Performance Power Amplifier Packages on the Red Planet
Currently en route, again, on NASA's Mars 2020 Perseverance Rover Santee, Calif. — 4 February 2021 — StratEdge Corporation, leader in the design and production of high-performance semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces that its SE20 power amplifier packages are playing a key role in transmitting signals with information gathered from...
Read More »
StratEdge Molded Ceramic: Straightforward Packaging Solutions for GaN Used in Mil-Std Applications
Accommodate frequencies up to 18 GHz Santee, Calif. — 18 November 2020 — StratEdge Corporation, leader in the design and production of high-performance semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces that its off-the-shelf line of molded ceramic packages can be configured to meet the requirements for chips with frequencies up to 18 GHz,...
Read More »
StratEdge to Display New Broadband QFNs and Revolutionary Eutectic Die Attach for GaN Devices at IMAPS Virtual 2020
~ Make an appointment to talk with our technical experts Santee, Calif. — 5 October 2020 — StratEdge Corporation, leader in the design, production, and assembly of high-frequency and high-power semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces that StratEdge technical experts will be available to discuss the best types of packaging and...
Read More »
Latest Ceramic and Molded Ceramic Packages Support 5G Infrastructure
Protect high-power laterally-diffused metal-oxide semiconductor (LDMOS), gallium arsenide (GaAs), silicon carbide (SiC), and gallium nitride (GaN) devices. Uses copper-molybdenum-copper (CMC) bases to dissipate heat, increasing the power output the chip achieves and enabling the device to operate at cooler temperatures. Device is mounted directly onto layer of thermally-conductive copper and...
Read More »Reginald Nocom Joins StratEdge as Process Engineer for Manufacturing Semiconductor Packages and IC Assembly Services
Santee, Calif - January 14, 2020 - StratEdge Corporation, leader in the design, production, and assembly of high-frequency and high-power semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces that Reginald (Regi) Nocom has joined StratEdge as a process engineer. With over 20 years in the microelectronics industry and extensive experience in...
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StratEdge Offers Assembly Services to Maximize Power Output of High Frequency Devices
Offers services for attaching gallium nitride and other high-frequency, high-power devices using gold-tin and gold-silicon onto CMC tabs. Optimizes chip performance and provides an effective way to dissipate heat to avoid overheating and failures during normal operation. Creates reliable solder joint with good thermal dissipation.
Read More »
New Packaging and Assembly Services Includes Ribbon Bonding Capability
Provides automatic and manual wedge wire bonding. Full packaging as well as chip-on-tab where StratEdge provides the heat spreading tabs. Specializes in RF and microwave devices, including GaN and gallium arsenide.
Read More »StratEdge President and CEO Tim Going Selected as a Finalist for the 2019 CEO of the Year Award
San Diego Business Journal honored local industry leaders' achievements San Diego, CA - July 24, 2019 - StratEdge Corporation, leader in the design, production, and assembly of high frequency and high power semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces that StratEdge president and CEO Tim Going has been selected as a finalist for the 2019 CEO of...
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New Semiconductor Packages Operate from DC to 63+ GHz
Dissipates heat from compound semiconductor devices such as gallium nitride gallium arsenide and silicon carbide. Enables compound semiconductor devices to meet critical requirements of markets such as telecom, mixed signal and MEMS.
Read More »
New Thermally-efficient Packages Operate Efficiently at Frequencies as High as 63+ GHz
Enable compound semiconductor devices to meet the critical requirements of markets. Offers complete automated assembly services including gold-tin solder die attach. Ideal for compound semiconductor devices, such as gallium nitride (GaN) and gallium arsenide (GaAs).
Read More »