Axcelis Technologies Inc.
Beverly, MA 01915
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Axcelis Announces Multiple Wins for 'Purion XE' High Energy System Including New Foundry Penetration
Innovative Platform Delivers Industry Leading Purity, Precision and Productivity to Meet Future Process Challenges as Well as Today's Production Requirements BEVERLY, Mass.Ã- — Axcelis Technologies, Inc. (Nasdaq: ACLS), a leading supplier of enabling ion implantation solutions for the semiconductor industry, announced multiple wins for the Company's Purion XE single wafer, high energy...
Read More »Dry Strip suits high-volume, resist strip applications.
Available in 200 and 300 mm versions, RapidStrip(TM) 320 resist and polymer removal system uses downstream, microwave plasma generation and chuck-based, wafer heating to provide dry strip process. Small process vacuum chambers enable high ash rates. Suited for front-end-of-line applications, RapidStrip platform offers single and dual process-chamber configurations.
Read More »Stripping System cleans low-k materials without damage.
ES3LK 300 mm photoresist plasma stripping system provides zero-damage process for low-k materials, capping layers and etch stops used in low-k integration schemes through 45 nm technology node. Stand-alone, isotropic, dry-strip system maintains lowest k-effective value for integrated back-end-of-line dielectric stacks. It is compatible with subsequent wet cleaning steps and can be used with...
Read More »Dry Drip Systems offer throughput of 180 wafers/hour.
FusionGemini ES and FusionGemini Plasma Asher offer increased throughput of up to 180 wafers per hour for front-end-of-line (FEOL) and back-end-of-line (BEOL) cleaning applications. Downstream microwave design provides photoresist and polymer removal, while avoiding plasma charge damage. FusionGemini ES systems include H2O vapor-assisted process, where use of H2O vapor enhancement optimizes dry...
Read More »Ion Implanters utilize electron confinement technology.
GSD Ultra and HC3 Ultra implanters enable high-volume production of ultra shallow junctions. Designed for 200 mm applications, GSD Ultra is based on GSD multi-wafer endstation. HC3 Ultra is designed for 300 mm manufacturing and offers high current processing from 0.2 to 80 keV. Packaging design of both implanters allows for easy maintenance access and maximum tool uptime.
Read More »Charge Erasure Tool eliminates electrical charge build-up.
RapidErase(TM) UV-based system, based on company's 200 and 300 mm photostabilization platforms, gives chipmakers high-throughput process for bringing voltage levels back in line, both in front- and back-end-of-line environments as well as in post-manufacture probe and test area. It incorporates microwave-driven UV source and precisely controlled thermal energies that result in high-throughput,...
Read More »Axcelis Secures Ion Implant Tool Orders in Japan and Announces Participation in SEMICON Japan 2018 with Partner SCREEN Semiconductor Solutions
BEVERLY, Mass., Nov. 28, 2018 /PRNewswire/ -- Axcelis Technologies, Inc. (Nasdaq: ACLS), a leading supplier of enabling ion implantation solutions for the semiconductor industry, confirms receiving a multiple system order for both high-current and high-energy ion implanters from a major analog customer in Japan with deliveries scheduled in the fourth quarter of 2018 and the first quarter of...
Read More »Axcelis Announces Multiple Wins for 'Purion XE' High Energy System Including New Foundry Penetration
Innovative Platform Delivers Industry Leading Purity, Precision and Productivity to Meet Future Process Challenges as Well as Today's Production Requirements BEVERLY, Mass.Ã- — Axcelis Technologies, Inc. (Nasdaq: ACLS), a leading supplier of enabling ion implantation solutions for the semiconductor industry, announced multiple wins for the Company's Purion XE single wafer, high energy...
Read More »Dry Strip suits high-volume, resist strip applications.
Available in 200 and 300 mm versions, RapidStrip(TM) 320 resist and polymer removal system uses downstream, microwave plasma generation and chuck-based, wafer heating to provide dry strip process. Small process vacuum chambers enable high ash rates. Suited for front-end-of-line applications, RapidStrip platform offers single and dual process-chamber configurations.
Read More »Stripping System cleans low-k materials without damage.
ES3LK 300 mm photoresist plasma stripping system provides zero-damage process for low-k materials, capping layers and etch stops used in low-k integration schemes through 45 nm technology node. Stand-alone, isotropic, dry-strip system maintains lowest k-effective value for integrated back-end-of-line dielectric stacks. It is compatible with subsequent wet cleaning steps and can be used with...
Read More »Dry Drip Systems offer throughput of 180 wafers/hour.
FusionGemini ES and FusionGemini Plasma Asher offer increased throughput of up to 180 wafers per hour for front-end-of-line (FEOL) and back-end-of-line (BEOL) cleaning applications. Downstream microwave design provides photoresist and polymer removal, while avoiding plasma charge damage. FusionGemini ES systems include H2O vapor-assisted process, where use of H2O vapor enhancement optimizes dry...
Read More »Ion Implanters utilize electron confinement technology.
GSD Ultra and HC3 Ultra implanters enable high-volume production of ultra shallow junctions. Designed for 200 mm applications, GSD Ultra is based on GSD multi-wafer endstation. HC3 Ultra is designed for 300 mm manufacturing and offers high current processing from 0.2 to 80 keV. Packaging design of both implanters allows for easy maintenance access and maximum tool uptime.
Read More »Charge Erasure Tool eliminates electrical charge build-up.
RapidErase(TM) UV-based system, based on company's 200 and 300 mm photostabilization platforms, gives chipmakers high-throughput process for bringing voltage levels back in line, both in front- and back-end-of-line environments as well as in post-manufacture probe and test area. It incorporates microwave-driven UV source and precisely controlled thermal energies that result in high-throughput,...
Read More »