Discovery Semiconductors Inc.
Ewing, NJ 08628
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Discovery Semiconductors Receives PhAST/Laser Focus World Innovation Award Honorable Mention
May 24, 2007 - Ewing, NJ - Discovery Semiconductors, Inc. has received the PhAST/Laser Focus World Innovation Award Honorable Mention for creating the first commercial ultra-fast 10 Gb/s coherent optical receiver system. The Innovation Awards Program is an annual competition open to CLEO exhibitors for products released in the previous 12 months. The award was presented on May 10th 2007 during...
Read More »Discovery Semiconductors Receives PhAST/Laser Focus World Innovation Award Honorable Mention
May 24, 2007 - Ewing, NJ - Discovery Semiconductors, Inc. has received the PhAST/Laser Focus World Innovation Award Honorable Mention for creating the first commercial ultra-fast 10 Gb/s coherent optical receiver system. The Innovation Awards Program is an annual competition open to CLEO exhibitors for products released in the previous 12 months. The award was presented on May 10th 2007 during...
Read More »University of Kiel Chooses Discovery Semiconductors' Balanced Photoreceivers for 16-Ary Modulation Format Research
April 17, 2007 - Ewing, NJ - Discovery Semiconductors, Inc. has provided balanced photoreceivers to the University of Kiel in Germany for their research on multilevel modulation formats for high-speed optical communications. Researcher Murat Serbay demonstrated a 16-ary modulation format at 42.8 Gb/s based on four phase levels combined with four amplitude levels [1]. This work was presented at...
Read More »University of Kiel Chooses Discovery Semiconductors' Balanced Photoreceivers for 16-Ary Modulation Format Research
April 17, 2007 - Ewing, NJ - Discovery Semiconductors, Inc. has provided balanced photoreceivers to the University of Kiel in Germany for their research on multilevel modulation formats for high-speed optical communications. Researcher Murat Serbay demonstrated a 16-ary modulation format at 42.8 Gb/s based on four phase levels combined with four amplitude levels [1]. This work was presented at...
Read More »Discovery Semiconductors Provides High Optical Power Handling Photodiodes for Low Phase Noise Opto-Electronic Oscillators
Discovery Semiconductors, Inc., has provided high optical power handling, 12 GHz InGaAs photodiodes to the optoelectronic group of the Institut d'Electronique, de Microelectronique et de Nanotechnologie (IEMN) in France, led by Prof. Didier Decoster for their research in opto-electronic oscillators. The opto-electronic oscillator is a special class of oscillator that is based on converting...
Read More »Discovery Semiconductors Provides High Optical Power Handling Photodiodes for Low Phase Noise Opto-Electronic Oscillators
Discovery Semiconductors, Inc., has provided high optical power handling, 12 GHz InGaAs photodiodes to the optoelectronic group of the Institut d'Electronique, de Microelectronique et de Nanotechnologie (IEMN) in France, led by Prof. Didier Decoster for their research in opto-electronic oscillators. The opto-electronic oscillator is a special class of oscillator that is based on converting...
Read More »German Researchers Use Discovery Semiconductors' 20 Gb/s Multimode Optical Receivers to Characterize 980 nm VCSELs
October 20, 2006 - Discovery Semiconductors, based in Ewing, NJ, has provided 25 GHz multimode (MM) photodiodes to the Technical University of Berlin for their research on directly modulated 980 nm lasers. Prof. D. Bimberg, with the Technical University of Berlin, led a collaborative group of researchers from the Center for Nano Photonics, Nanosemiconductor GmbH in Dortmund as well as that of...
Read More »German Researchers Use Discovery Semiconductors' 20 Gb/s Multimode Optical Receivers to Characterize 980 nm VCSELs
October 20, 2006 - Discovery Semiconductors, based in Ewing, NJ, has provided 25 GHz multimode (MM) photodiodes to the Technical University of Berlin for their research on directly modulated 980 nm lasers. Prof. D. Bimberg, with the Technical University of Berlin, led a collaborative group of researchers from the Center for Nano Photonics, Nanosemiconductor GmbH in Dortmund as well as that of...
Read More »Scientists use Discovery's 40 GHz Photodiodes to Characterize 1.3 µm, Directly Modulated Semiconductor Lasers
April 27, 2006 - Ewing, NJ - Discovery Semiconductors, Inc., an American company manufacturing optical receivers up to 65 GHz, has provided ultra-fast, 40 GHz InGaAs photodiodes to the University of California, Los Angeles (UCLA) and the National Chung Cheng University in Taiwan for their collaborative research in ultra-fast, directly modulated 1.3 µm DFB lasers. The Photonic Research Laboratory...
Read More »Scientists use Discovery's 40 GHz Photodiodes to Characterize 1.3 -µm, Directly Modulated Semiconductor Lasers
April 27, 2006 - Ewing, NJ - Discovery Semiconductors, Inc., an American company manufacturing optical receivers up to 65 GHz, has provided ultra-fast, 40 GHz InGaAs photodiodes to the University of California, Los Angeles (UCLA) and the National Chung Cheng University in Taiwan for their collaborative research in ultra-fast, directly modulated 1.3 -µm DFB lasers. The Photonic Research...
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