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UltraCMOS® PE29102 FET Driver is suitable for half-bridge or full-bridge configurations and comes with phase-control pins. Unit is available in 2 x 1.6 mm flip-chip die package and can handle up to 60V voltage source. Product offers minimum pulse width of 5 ns and propagation delay of 9.1 ns and features source and sink currents of 2A and 4A respectively. FET driver comes with... Read More
Operated in -40°C to +105°C temperatures in 700 MHz to 6 GHz frequency range, UltraCMOS® PE42823 RF SPDT Switch delivers single-event peak power handling of 51 dBm LTE. Having 4.5 kV HBM of ESD rating of on RF pins to ground, unit’s inputs come with 70 dBm (IIP3) and 105 dBm (IIP2) linearity. Housed in 16-lead, 3 x 3 x 0.75 mm QFN package, product feature 43 dB and 34 dB of isolation on... Read More
Designed in PE426462, PE426482 and PE426412 models, RF Switches are operated in -55 to +125°C temperature range. Delivering 200 nanoseconds of switching time and 100 nanoseconds fall/rise time, units have 10 MHz to 8 GHz frequency spectrum. PE426462, PE426482 switches are available in 24-lead 4 x 4 mm QFN package whereas PE426412 in 32-lead 5 x 5 mm QFN package.Read More
Delivering alternative to GaAs technology, PE42542 and PE42543 are based on UltraCMOSÂ® technology and offer bandwidth that maintains performance across 9 kHz to 18 GHz range. Respective values for PE42542 and PE42543 include linearity of 58 and 59 dBm IIP3 (118 and 113 dBm IIP2), switching time of 3 Âµsec and 500 nsec, and ESD ratings of 3.5/2.5 kV HBM, 150 V MM, and 500/250 V CDM on all... Read More
Supplied in 3 x 3 x 0.85 mm package, 2-bit PE43204 leverages UltraCMOS(TM) and HaRP(TM) technologies to serve 4G Tx/Rx applications. It supports 18 dB attenuation range in 6 and 12 dB steps, protects receive path, and prevents overdriving of ADC. With no gate lag or phase drift, DSA delivers accelerated settling time and Input IP3 greater than +61 dBm at 3 GHz. Typ switching time is 26 nsec, with... Read More
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