RF Micro Devices, Inc.
Greensboro, NC 27409
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RFMD's PowerSmart(TM) Power Platforms Awarded Editor's Choice by Embedded Computing Design Magazine
PowerSmart Recognized for Reducing Power Consumption in Multiband, Multi-mode 3G/4G Handsets GREENSBORO, N.C. -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD's PowerSmart(TM) power platforms have received an Editor's Choice award from Embedded...
Read More »RFMD-® Exceeds 100 Million Units in Shipments of Industry-Leading 2G Transmit Modules
RF71xx Family of Transmit Modules Extends RFMD's Share Gains in Emerging Markets GREENSBORO, N.C., -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMDÃ-® has surpassed 100 million units in cumulative shipments of its industry-leading RF71xx...
Read More »RF Micro Devices-® Features Ember ZigBee-® Technology in New Family of High Performance Front End Modules for Smart Energy Applications
GREENSBORO, N.C., and BOSTON, - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today it is teaming with Ember Corporation to introduce ZigBee-® front end modules (FEMs) for smart grid applications that give utilities and consumers more control over how they...
Read More »RFMD-® Achieves Milestone in Commercialization of High-Performance Photovoltaic Cells
GREENSBORO, N.C., Mar 15, 2010 - RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has successfully manufactured the industry's first photovoltaic cell using high-volume six-inch gallium arsenide (GaAs) machinery. The photovoltaic (PV) cell was manufactured...
Read More »RF Switches are offered in multi-throw versions.
Offered in 2.0 x 1.3 x 0.35 mm QFN package, RF1126 low-power SPDT symmetric switch offers insertion loss and linearity performance suitable for signal routing and antenna switching applications. Offered in 2.0 x 2.0 x 0.55 mm QFN package, SP3T symmetric switches RF1131 and RF1132 provide insertion loss of 0.32-0.49 and 0.47-0.69 dB and linearity of 59/62 dBm and 65/63 dBm, respectively, making...
Read More »RFMD-® Targets CDMA Components Market with Compelling New Products
Full Suite Of New Products Includes Power Amplifiers, Switches and GPS LNA Modules BARCELONA, SPAIN - February 17, 2009 - RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today announced it is targeting the CDMA components market with the introduction of multiple compelling new CDMA front end products. In calendar year 2009,...
Read More »Front End Modules target mobile Wi-Fi applications.
Housed in 3.0 x 3.0 x 0.5 mm package, Models RF5325, RF5345, and RF5725 each contain 2.4 GHz power amplifier, output power coupler, transmit low pass filtering, and SP3T switch capable of switching between Wi-Fi Rx, Wi-Fi Tx, and BluetoothÃ-® Rx/Tx operations. Models RF5345 and RF5725 also integrate low noise amplifier for RF architectures requiring additional Rx gain. Featuring 3.3% error...
Read More »Switch Filter Modules suit multiband, multimode 3G handsets.
Along with single-pole nine throw pHEMT switch, RF1194 integrates quad-band GSM/GPRS/EDGE transmit low-pass filtering and 4 GSM/GPRS/EDGE receive surface acoustic wave filters. Model RF1195 integrates single-pole ten throw pHEMT switch and builds on RF1194 architecture by providing additional high-linearity port for 4 total symmetrical WCDMA/HSPA+ Tx/Rx ports. Both cellular switch filter modules...
Read More »Power Amplifiers suit 3G multi-band mobile devices.
Designed for 3G multimode devices implementing mode-specific, band-specific front end architectures, RF720x Series WCDMA/HSPA+ Power Amplifiers include integrated output power coupler, which eliminates need for external couplers. Three digital power modes adjust bias current and optimize PA for desired output power range while maintaining linearity. Amplifiers come in low-profile package...
Read More »Transmit Modules target emerging market handsets.
Class 12-compliant RF716x dual-band GSM/GPRS transmit modules feature 2 symmetrical, interchangeable receive ports for optimized routing during implementation. They utilize GaAs pHEMT as well as PowerStarÃ-® integrated power control technology, also integrating transmit filtering to maximize harmonic performance. At 6.63 x 5.24 x 1.00 mm and with mirrored footprints, modules incorporate ESD...
Read More »RF Micro Devices-® to Present at Barclays Capital Global Technology Conference on December 8, 2010
GREENSBORO, N.C., Nov. 30, 2010 - RF Micro Devices (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that Company executives are scheduled to present at Barclays Capital Global Technology Conference in San Francisco, California, on Wednesday, December 8, 2010, at 9:00 am Pacific...
Read More »RFMD Expands Multi-Market Product Catalog to Include High Linearity Differential If Mixers
Targeted Applications Include Cellular Infrastructure, Wireless Backhaul And Other High-Performance Wireless Systems Greensboro, NC, November 10, 2010 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of the Company's RF component catalog to...
Read More »RFMD's PowerSmart(TM) Power Platforms Awarded Editor's Choice by Embedded Computing Design Magazine
PowerSmart Recognized for Reducing Power Consumption in Multiband, Multi-mode 3G/4G Handsets GREENSBORO, N.C. -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD's PowerSmart(TM) power platforms have received an Editor's Choice award from Embedded...
Read More »RFMD-® Exceeds 100 Million Units in Shipments of Industry-Leading 2G Transmit Modules
RF71xx Family of Transmit Modules Extends RFMD's Share Gains in Emerging Markets GREENSBORO, N.C., -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMDÃ-® has surpassed 100 million units in cumulative shipments of its industry-leading RF71xx...
Read More »RF Micro Devices-® Features Ember ZigBee-® Technology in New Family of High Performance Front End Modules for Smart Energy Applications
GREENSBORO, N.C., and BOSTON, - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today it is teaming with Ember Corporation to introduce ZigBee-® front end modules (FEMs) for smart grid applications that give utilities and consumers more control over how they...
Read More »RFMD-® Achieves Milestone in Commercialization of High-Performance Photovoltaic Cells
GREENSBORO, N.C., Mar 15, 2010 - RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has successfully manufactured the industry's first photovoltaic cell using high-volume six-inch gallium arsenide (GaAs) machinery. The photovoltaic (PV) cell was manufactured...
Read More »RF Switches are offered in multi-throw versions.
Offered in 2.0 x 1.3 x 0.35 mm QFN package, RF1126 low-power SPDT symmetric switch offers insertion loss and linearity performance suitable for signal routing and antenna switching applications. Offered in 2.0 x 2.0 x 0.55 mm QFN package, SP3T symmetric switches RF1131 and RF1132 provide insertion loss of 0.32-0.49 and 0.47-0.69 dB and linearity of 59/62 dBm and 65/63 dBm, respectively, making...
Read More »RFMD-® Targets CDMA Components Market with Compelling New Products
Full Suite Of New Products Includes Power Amplifiers, Switches and GPS LNA Modules BARCELONA, SPAIN - February 17, 2009 - RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today announced it is targeting the CDMA components market with the introduction of multiple compelling new CDMA front end products. In calendar year 2009,...
Read More »Switch Filter Modules suit multiband, multimode 3G handsets.
Along with single-pole nine throw pHEMT switch, RF1194 integrates quad-band GSM/GPRS/EDGE transmit low-pass filtering and 4 GSM/GPRS/EDGE receive surface acoustic wave filters. Model RF1195 integrates single-pole ten throw pHEMT switch and builds on RF1194 architecture by providing additional high-linearity port for 4 total symmetrical WCDMA/HSPA+ Tx/Rx ports. Both cellular switch filter modules...
Read More »Front End Modules target mobile Wi-Fi applications.
Housed in 3.0 x 3.0 x 0.5 mm package, Models RF5325, RF5345, and RF5725 each contain 2.4 GHz power amplifier, output power coupler, transmit low pass filtering, and SP3T switch capable of switching between Wi-Fi Rx, Wi-Fi Tx, and BluetoothÃ-® Rx/Tx operations. Models RF5345 and RF5725 also integrate low noise amplifier for RF architectures requiring additional Rx gain. Featuring 3.3% error...
Read More »