Advanced Power Technology
Bend, OR 97702
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RF Power MOSFET operates at dc voltages up to 165 V.
Housed in flangeless T3 package, Model ARF475FL uses 2 die configured for push-pull operation and is capable of 1,000 W pulsed output and 300 CW at up to 150 MHz. To obtain high power dissipation, backside of package is lapped to mate with system heat sink. Coplanar lead arrangement facilitates circuit layout and provides over 2,500 V isolation between any terminal and mounting surface....
Read More »Transistors target high L-band pulsed radar applications.
Housed in hermetic metal package, High L-Band Series consists of Model types 1517-20M, 1517-110M, and 1517-250M, which cover frequency from 1,480-1,650 MHz with pulsed output power of 20, 110, and 250 W respectively. Transistors handle medium pulse widths of 200 Ã-µs with duty cycle of 10%. Model 1517-250M features 7.0 dB gain with 0.5 dB droop or less, and rise time of 150 ns.
Read More »P-Band Power Transistors deliver up to 9.6 dB power gain.
Designed to handle medium pulse widths up to 150 Ã-µs with 5% min duty cycle, Models 0910-60M, 0910-150M, and 0910-300M cover frequency for P-Band radar applications from 890 to 1,000 MHz with output power of 60, 150, and 300 W, respectively. Class C 300 W device offers 0.5 dB droop at 150 ns rise time with load mismatch VSWR of 3:1. By integrating 4, 6, or 8 of 0910-300M transistors with...
Read More »IGBTs target TIG welder applications.
Models APT200GN60J and APT200GN60JDQ4 insulated gate bipolar transistors use Field Stop Trench Gate Technology and are offered in industry standard SOT-227 package. Units operate up to 30 kHz hard-switched and are 10 Ã-µs short circuit rated. In addition to being used in output inverter of aluminum TIG welders, devices can be used in any application requiring low conduction losses at high...
Read More »Fast Recovery Epitaxial Diodes are rated at 600 V.
Series DQ features extremely soft recovery, minimizing EMI, which eliminates need for snubbers. Thermally stable units are rated to 175Ã-
Read More »Boost/Buck Chopper Circuits feature SOT-227 package.
COOLMOS(TM) and IGBT Transistors use MOSFETs in plastic SOT-227 package, which provides 2,500 V isolation and screw-on terminals, allowing assembly onto PC board and heatsink. High-voltage transistors combined with fast recovery diodes offer solution to applications requiring high current and high switching frequency up to 200 kHz. Applications include power factor correction converters, DC motor...
Read More »Power Modules suit high voltage, zero current switching.
Rated 1,000 and 1,200 V, MOSFET Modules are offered in single switch configuration with currents from 86-160 A and phase leg configuration with currents of 37-49 A. Modules are integrated in SP6 package, which exhibits minimum internal parasitic resistance and inductance. Power devices allow operating in ZCS mode in range of 100-200 kHz for Power MOS 7Ã-® PT IGBTs and Fast NPT IGBTs, and...
Read More »MOSFET Modules feature current ratings from 13-160 A.
Offered in low profile SP4 and SP6 packages, PowerMOS 7Ã-® 1000 and 1200 V MOSFETs and FREDFETs allow operating in hard switching mode in range of 100-200 kHz. They are offered in single switch, Buck, Boost, Dual common source, phase leg, and full bridge configurations. Applications include power factor correction, motor control, UPS, and power supplies operating from 400 Vac mains and above.
Read More »Power MOSFETs suit military and aerospace applications.
Available in 600 and 800 V models, COOLMOS-® Power MOSFETs come in TO-257, TO-254, and TO-258 hermetic packages. Units range from 7.4-33.5 A with maximum On-Resistance from 0.080-0.500 ohms. They feature low internal gate resistance for low switching losses and controllable EMI noise, as well as low gate charge for low driving requirements.
Read More »Transistors use gold topside metallization and gold wires.
L-Band, Long Pulse Model 1214-32L is rated with input power of 5.3 W to provide minimum power output of 32 W over 1.2-1.4 GHz band. Model 1214-150L is rated with input power of 27 W to provide minimum output of 150 W over same frequency range. Units are suited for full range of L-Band radar applications.
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IRVINE, Calif., Dec. 2, 2010 - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor technology aimed at building a secure, smart, connected world, announced that Space Forum 2011, formerly known as the Actel Space Forum, kicks off today in Los Angeles, California. With more than 100 registered attendees, this invitation-only event has drawn system designers from the country's...
Read More »RF Power MOSFET operates at dc voltages up to 165 V.
Housed in flangeless T3 package, Model ARF475FL uses 2 die configured for push-pull operation and is capable of 1,000 W pulsed output and 300 CW at up to 150 MHz. To obtain high power dissipation, backside of package is lapped to mate with system heat sink. Coplanar lead arrangement facilitates circuit layout and provides over 2,500 V isolation between any terminal and mounting surface....
Read More »Advanced Power Technology & Northrop Grumman Enter into Silicon Carbide License Agreement
Next Generation Chip Technology for Power Electronics in Military and Commercial Applications Ranging from Radar to Hybrid Vehicles Bend, Oregon, February 22, 2006 - Advanced Power Technology, Inc. (NASDAQ: APTI), a leading supplier of high performance power semiconductors announced today that the company has entered into a license agreement with the Electronic Systems' sector of Northrop Grumman...
Read More »Transistors target high L-band pulsed radar applications.
Housed in hermetic metal package, High L-Band Series consists of Model types 1517-20M, 1517-110M, and 1517-250M, which cover frequency from 1,480-1,650 MHz with pulsed output power of 20, 110, and 250 W respectively. Transistors handle medium pulse widths of 200 Ã-µs with duty cycle of 10%. Model 1517-250M features 7.0 dB gain with 0.5 dB droop or less, and rise time of 150 ns.
Read More »P-Band Power Transistors deliver up to 9.6 dB power gain.
Designed to handle medium pulse widths up to 150 Ã-µs with 5% min duty cycle, Models 0910-60M, 0910-150M, and 0910-300M cover frequency for P-Band radar applications from 890 to 1,000 MHz with output power of 60, 150, and 300 W, respectively. Class C 300 W device offers 0.5 dB droop at 150 ns rise time with load mismatch VSWR of 3:1. By integrating 4, 6, or 8 of 0910-300M transistors with...
Read More »IGBTs target TIG welder applications.
Models APT200GN60J and APT200GN60JDQ4 insulated gate bipolar transistors use Field Stop Trench Gate Technology and are offered in industry standard SOT-227 package. Units operate up to 30 kHz hard-switched and are 10 Ã-µs short circuit rated. In addition to being used in output inverter of aluminum TIG welders, devices can be used in any application requiring low conduction losses at high...
Read More »Fast Recovery Epitaxial Diodes are rated at 600 V.
Series DQ features extremely soft recovery, minimizing EMI, which eliminates need for snubbers. Thermally stable units are rated to 175Ã-
Read More »Boost/Buck Chopper Circuits feature SOT-227 package.
COOLMOS(TM) and IGBT Transistors use MOSFETs in plastic SOT-227 package, which provides 2,500 V isolation and screw-on terminals, allowing assembly onto PC board and heatsink. High-voltage transistors combined with fast recovery diodes offer solution to applications requiring high current and high switching frequency up to 200 kHz. Applications include power factor correction converters, DC motor...
Read More »Power Modules suit high voltage, zero current switching.
Rated 1,000 and 1,200 V, MOSFET Modules are offered in single switch configuration with currents from 86-160 A and phase leg configuration with currents of 37-49 A. Modules are integrated in SP6 package, which exhibits minimum internal parasitic resistance and inductance. Power devices allow operating in ZCS mode in range of 100-200 kHz for Power MOS 7Ã-® PT IGBTs and Fast NPT IGBTs, and...
Read More »MOSFET Modules feature current ratings from 13-160 A.
Offered in low profile SP4 and SP6 packages, PowerMOS 7Ã-® 1000 and 1200 V MOSFETs and FREDFETs allow operating in hard switching mode in range of 100-200 kHz. They are offered in single switch, Buck, Boost, Dual common source, phase leg, and full bridge configurations. Applications include power factor correction, motor control, UPS, and power supplies operating from 400 Vac mains and above.
Read More »