Original Press release
Nitronex Corporation
2305 Presidential Drive
Durham, NC, 27703
USA
Nitronex's 5W GaN on Si RF Power Transistor Ready for Volume Production
GaN pre-driver completes full amplifier line-up...
Durham, N.C. (November 12, 2007) - Nitronex, the global leader in gallium nitride on silicon (GaN on Si) RF power transistors for the wireless infrastructure, broadband and military markets, has developed a 28V, 5W class high electron mobility transistor (HEMT) designed for broadband applications from DC - 6.0 GHz. Designed using Nitronex's patented SIGANTIC® NRF1 process, the NPTB00004 achieves 250 mW average output power at 1% EVM in 3.5GHz WiMAX systems (single carrier OFDM, 64-QAM ¾, 8 burst, 20 ms frame, 15ms frame data, 3.5MHz channel bandwidth, peak/avg = 10.3dB).
"Having seen market demand for full transmitter lineups based on GaN technology we developed the NPTB00004, an excellent pre-driver for our higher power products such as the NPT25100. Combined with other broadband Nitronex devices, this device allows designers to develop power amplifiers for multiple frequency bands using a common power device lineup," said Ray Crampton, Director of Marketing at Nitronex. "The NPTB00004 is production ready and our qualification report is available online."
The NPTB00004 transistors are packaged in a cost-effective plastic over-molded SOIC-8 package with an exposed thermal pad. Samples and application boards are available. Typical pricing is $9 each in quantities of 1000, with a lead time from stock to ten weeks.
The NPTB00004 transistors are lead-free and RoHS compliant.
For more information about Nitronex's NPTB00004 GaN on Si RF power transistor, contact Nitronex at 2305 Presidential Drive, Durham, NC 27703; call 919-807-9100; e-mail info@nitronex.com; or visit www.nitronex.com.
About Nitronex
Specializing in the development and manufacturing of gallium nitride (GaN) RF power devices, Nitronex is the global leader in high-performance GaN on silicon (GaN on Si) RF power transistors for the commercial wireless infrastructure, broadband and military markets. Based on its patented SIGANTIC® process - gallium nitride on silicon technology - Nitronex is at the forefront of commercializing GaN technology for RF applications. The company's ability to combine the disciplines of material growth, wafer processing, device design and wireless applications knowledge is unique to the industry.
Nitronex was founded in 1999 by graduates of the wide bandgap program at North Carolina State University and is headquartered in Durham, North Carolina. It holds 16 patents with 18 others pending.
For more information, contact:
Ray Crampton
Director of Marketing
919-424-5175
rcrampton@nitronex.com
Kara Thompson
Sales and Marketing Assistant
919-424-5222
kthompson@nitronex.com
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