austriamicrosystems AG    Schloss Premstaetten A 8141  Austria
May 11, 2012 With 0.35 µm High-Voltage CMOS fabrication service, austriamicrosystems offers latch up-free ESD protection up to 8 kV at 50 V and up to 4 kV at 120 V operating voltage in integrated circuits fabricated on H35 process. ESD protection cells guarantee 1 kV, 2 kV, 4 kV, and 8 kV HBM ESD protection compliant with MIL-883H, Method 3015.8, JEDEC JESD22-A114F ESD, and AEC-Q100 standards, as well as protection up to 500 V according to Charged Device Model.

MagnaChip Semiconductor    Cheongju-si,Chungbuk   Korea (south)
Mar 23, 2012 Able to support wide voltage ranges, 0.13 µm triple gate oxide CMOS process is fully compatible with standard CMOS process and designed to keep all device parameters unchanged within process variation ranges. Additional layer of gate oxide introduces 1.8 V CMOS into standard 1.2/3.3 V CMOS array on 0.13 µm technology. Using modular characteristic for IC design provides flexibility, allowing selection of 1.2/3.3 V or 1.2/1.8/3.3 V CMOS processes without design reverification.

INTERTEC Instrumentation Ltd    Sarnia, ON N7T 7H5
Dec 02, 2011 Able to be specified to millimeter accuracy, Multibox Vario environmental protection enclosures accommodate size and form factor needs to precisely match instrumentation content and layout demands of instrumentation and control engineers' applications. Dimensions range from 100 x 100 x 100 mm with 20 mm thick walls to 2,000 x 1200 x 800 mm with 102 mm thick walls, and sandwich type construction is based on UV-resistant glass-fiber reinforced plastic skins and internal insulative foam core.

austriamicrosystems AG    Schloss Premstaetten A 8141  Austria
Oct 24, 2011 Built on 0.35 µm High-Voltage CMOS technology, inter-metal dioxide (IMD) layers enhances galvanic isolation to over 600+ Vrms. Process lets designers forego optocoupler and directly integrate 2 individual ICs within one package for complex analog/mixed signal applications to achieve synchronized performance for information exchange as long as one IC has special IMD layers. Isolated communications may be based on inductive coupling between 2 coils or capacitive coupling of 2 capacitors.

austriamicrosystems AG    Schloss Premstaetten A 8141  Austria
Nov 29, 2010 Multi-Project Wafer (MPW) services include 6 prototyping runs in 0.18 µm CMOS (C18) process and 4 MPW runs in 0.18 µm high-voltage CMOS (H18) technology. H18 process technology is based on IBM 0.18 µm CMOS CMOS7RF process and is suited for smart power management ICs, while 0.35 µm specialty processes from TSMC is suited for power management products and display drivers. Other options include 20 and 50 V CMOS, 120 V module, and high-voltage CMOS process with Embedded Flash functionality.

IBM (Corporate Headquarters)    Armonk, NY 10504-1783
Nov 19, 2010 Suited for creating advanced semiconductors, Cu-32 Custom Logic aids production of chips used in fiber-optic and wireless networks, and in routers and switches. It allows use of embedded DRAM, with up to 600 MHz of random cycle performance, that supports up to 1 GB of memory on single chip. Developers can also use high-speed serial cores in designs, and high-k metal gate, silicon-on-insulator (SOI) process that helps improve energy efficiency in chips.

RF Micro Devices, Inc.    Greensboro, NC 27409-9421
Oct 15, 2010 In addition to working with customers to develop epitaxial structures and MBE growth conditions, MBE Foundry Services support delivery of epitaxial wafers grown to exact customer specifications and development of epitaxial design of experiments. Ultra-high vacuum cleaning services include wet mechanical cleaning, wet bead blasting, acid wet chemical etch, and base wet chemical etch on variety of stainless steel, refractory metal, and PBN ceramic parts.

Express Manufacturing, Inc.    Santa Ana, CA 92704
Oct 05, 2010 To meet compact design demands of portable and desktop medical devices, Package on Package (PoP) assembly packaging technology vertically stacks discrete controller and memory Ball Grid Array (BGA) components. This allows multi-chip packages to be integrated for space conservation on PCB and simplifies assembly processes using single flow/reflow, which eliminates thermal stress during assembly. Dedicated assembly flow is designed based on thermal coefficient characteristics of components.

ON Semiconductor, LLC    Phoenix, AZ 85008
Jul 09, 2010 Building upon HighQ(TM) copper on silicon integrated passive device (IPD) technology, HighQ IPD2 process utilizes 8 in. wafer technology and features second 5 µm copper layer that promotes inductor performance and flexibility. It supports design of precise IPDs for RF system in package applications in portable electronics equipment. Typical designs include baluns, low pass filters, band pass filters, and diplexers used in portable and wireless applications.

Zoneworks    Milwaukee, WI 53223
May 24, 2010 Custom-designed to match any size pallet, insulated pallet covers feature materials and flexible structure that help maintain proper temperature of heated or cooled palletized products anywhere throughout supply chain. Covers have collapsible design with handles and are made of fire-retardant industrial vinyl that prohibits water absorption. While multi-layered construction lends to durability, anti-microbial batting delivers thermal insulation.

Interphase Corp.    Dallas, TX 75234
May 19, 2010 Enabled by highly skilled engineers, Engineering Design Services (EDS) accommodate those looking for expert advice on tightening their own embedded design or seeking turnkey concept-to-production service. Full-service Electronics Contract Manufacturing (ECM), also available, continually meets/exceeds contract manufacturing requirements for boards, sub-assemblies, and systems using quality processes in ISO-9001, TL-9000, and ISO-14000 certified facilities.

Safety Technology International    Waterford, MI 48327
May 10, 2010 Universal Stopper® (STI-13000 series) offers protection against accidental and intentional physical damage, dust and grime as well as severe environments inside and out. They are available with or without horn, in flush mount, surface mount or waterproof backbox, and red, blue, green, yellow, white or black color options for horn/label hood, spacer and backbox. Measuring less than 4 in., unit protects dual action pull stations, keypads, electrical light switches, and duplex plugs.

Baolab Microsystems, S.L.    Terrassa 08220  Spain
Mar 10, 2010 NanoEMS(TM) technology enables construction of nanoscale MEMS (Micro Electro Mechanical Systems) within structure of actual CMOS wafer itself using standard, high-volume CMOS lines. Existing metal layers in CMOS wafer are used to form MEMS structure via standard mask techniques, and Inter Metal Dielectric is etched away using vapour HF. Etching uses equipment already available for volume production and takes less than 1 hr. Holes are then sealed, and chip is packaged as required.

KMC Systems    Merrimack, NH 03054
Jun 23, 2009 Offering complete program for contract design, manufacture, and maintenance, KMC 360 is designed to support OEMs and start-ups throughout entire medical device and instrumentation product lifecycle by centralizing all outsourcing support. Approach is based on defined processes, continual communication, and cross-functional collaboration throughout each product lifecycle stage. Results include streamlined communication, strengthened product quality, and accelerated time-to-market.

Semiconductor Manufacturing International Corporation    Shanghai   China
Jun 16, 2009 Based on 2T PMOS flash (pFLASH(TM)) architecture, 0.18 µm embedded flash memory process provides non-volatile solution with endurance rated up to 100K cycles and data retention of up to 10 years. Design is optimized for configuration flexibility as well as minimal power consumption and space. Suitable applications include MCUs, USB keys, smartcards, and devices for automotive market.

austriamicrosystems AG    Premstatten   Austria
Jun 12, 2009 Through Silicon Via (TSV) technology enables two 8 in. wafers to be electrically connected. With typical TSV depths of 200-300 µm, it addresses variety of markets requiring 3D integration of CMOS ICs, photo sensors, gas sensors, power devices, or MEMS components such as automotive, industrial, and consumer applications. Flexible manufacturing concept allows for customer specific modifications, and varying wafer thicknesses can be supported.

TSMC    Hsinchu   Taiwan
Apr 16, 2009 Suited for power-sensitive, automotive, and analog applications, 0.18-micron embedded flash (embFlash) process technology family includes baseline 1.8-5 V standard process, ultra-low leakage process, and specific automotive-qualified embedded Flash IP. Process features one low-voltage Flash IP that fully functions at 1.8 V; several Flash IP macros and customization service are available. Process suits large appliance motor controls on refrigerators, washing machines, and A/C units.

MagnaChip Semiconductor    Cheongju-si,Chungbuk   Korea (south)
Dec 09, 2008 Offered to foundry customers, 0.18 and 0.35 µm aBCD (Advanced Bipolar CMOS-DMOS) process technologies adopt DTI (Deep Trench Isolation) process to satisfy reliability and latch-up requirements. Both voltage-scalable solutions are optimized for low Rsp (Specific Ron), promoting drive capability for power management ICs, and reduce high voltage transistor pitch with DTI technology. Switching speed is achieved by removing parasitic resistance and capacitance between high voltage wells.

Raymarine Inc.    Nashua, NH 03063
Nov 11, 2008 Featuring flush-mounted, 6.42 x 3.84 in. design, G-Series Compact Keyboard offers control of up to 4 G-Series displays and 4 GPM400 processors. LED indicators enable captains to determine which display and GPM400 is currently under command. Keyboard also offers color coded softkeys for control that simplify navigation.

Silterra Malaysia Sdn Bhd    Kedah Darul Aman   Malaysia
Aug 21, 2008 Featuring 2.13 micron square SRAM bitcell optimized for high density embedded memory design for high resolution WQVGA, HVGA, and VGA TFT panels with 2.5 in. panel size and above, CL130H32 is 0.13 micron high voltage technology. It offers Asymmetry High Voltage Well for denser design, one-time-programmable cell for gamma color tuning and voltage trimming, ESD protection, and metal capacitors design guideline.