Optics & Photonics

Phototransistor is capable of high-temperature operation.

October 16, 2014

Available in half-pitch, mini-flat, 4-pin package, Fairchild OptoHiT™ Series model FODM8801 operates up to 125°C. Optocoupler consists of AIGaAs IR LED optically coupled to phototransistor. While primarily suited for DC-DC converters, product serves such typical applications as ground-loop isolation, signal-noise isolation, communications (adapters, chargers), consumer appliances and STBs, and industrial power supplies, motor control, and programmable logic control. Read More

Electronic Components & Devices, Optics & Photonics

High-Speed Photo Detectors offer ±35° angle of half sensitivity.

August 13, 2013

Offered with or without daylight blocking filters, AEC-Q101-qualified photo detectors are RoHS-compliant and halogen-free and come in miniature gullwing, reverse gullwing, and side-view packages with wide-view dome lenses. While VEMD2xx3(SL) PIN photodiodes have typ output current of 10 µA and dark current of 1 nA, VEMT2xx3(SL) phototransistors have typ output of 2.7 mA. Typical photo currents are 10 µA for photodiodes and 2.7 mA for phototransistors at 1 mW/cm² and 950 nm. Read More

Test & Measuring Instruments, Sensors, Monitors & Transducers, Optics & Photonics

SMD Transmissive Optical Sensors operate from -40 to +125°C.

June 26, 2013

Measuring 5.5 x 4 x 4 mm, single-channel TCPT1350X01 includes infrared emitter and phototransistor detector located face-to-face in surface-mount package while dual-channel TCUT1350X01 includes infrared emitter and 2 phototransistor detectors. Both AEC-Q101-qualified devices have phototransistor output and 0.3 mm aperture. Offering typical output current of 1.6 mA, sensors operate at wavelength of 950 nm and can be used as position sensors for encoders in high-temperature environments. Read More

Sensors, Monitors & Transducers, Electronic Components & Devices, Optics & Photonics

AEC-Q101-Qualified Photo Detectors measure 2.3 x 2.3 x 2.8 mm.

July 30, 2010

Model VEMD25x0X01 high-speed silicon PIN photodiodes offer 12 µA light current and spectral sensitivity range of 350-1,120 nm, while VEMT25x0X01 NPN planar phototransistors offer light current of 6 mA and spectral sensitivity from 470-1,090 nm. Sensitive to visible and NIR radiation, both photo detectors feature 1 nA dark current, ±15° angle of half sensitivity, and temperature range of -40 to +100°C. They are available in 1.8 mm gullwing and reverse gullwing SMT packages. Read More

Optics & Photonics

Phototransistors come in miniature surface mount packages.

May 13, 2008

Suited for space-constrained applications, SMT phototransistors include silicon phototransistor and photodarlington outputs that provide high photo sensitivity for automatic mounting and position sensing equipment. OP500/501 Series and OP520/521 Series feature 150° and 160° viewing angle as well as 1.5 mW/cm² and 5.0 mW/cm² apertured power, respectively. OP525 Series and OP580 Series have 1.5 mW/cm² and 5.0 mW/cm² apertured power as well as 25° and 100° viewing angle, respectively. Read More

Optics & Photonics

Phototransistors are compatible with lead-free reflow soldering.

April 17, 2008

Including Models VEMT3700, VEMT3700F, and VEMT4700, VEMT Series phototransistors have 2 µsec rise and fall times and ±60° angle of half intensity. Compatible with lead-free reflow soldering processes according to JEDEC-STD-020D, devices feature optical/electrical/mechanical compatibility to serve as pin-to-pin and functional equivalents for TEMT series phototransistors. Units suit object/proximity sensing, optical switching, shaft encoding, data transmission, and touch key applications. Read More

Optics & Photonics

Infrared Switch suits limited space, non-contact switching.

April 3, 2003

QVE00033 phototransistor infrared transmissive switch with miniature infrared sidelookers is for non-contact switching in disk drives, card detectors, and controllers. Optical switch has temperature resistant black plastic housing and is 7.50 x 4.05 x 5.40 mm. GaAs LED faces silicon phototransistor across 2 mm gap with 0.4 mm aperture. Peak transmission wavelength is infrared at 940 nm and operating temperature is -55 to 100°C. Read More

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