Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Jul 30, 2010 Model VEMD25x0X01 high-speed silicon PIN photodiodes offer 12 µA light current and spectral sensitivity range of 350-1,120 nm, while VEMT25x0X01 NPN planar phototransistors offer light current of 6 mA and spectral sensitivity from 470-1,090 nm. Sensitive to visible and NIR radiation, both photo detectors feature 1 nA dark current, ±15° angle of half sensitivity, and temperature range of -40 to +100°C. They are available in 1.8 mm gullwing and reverse gullwing SMT packages.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Oct 27, 2009 Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 µA and spectral sensitivity range of 470-1,090 nm or 750-1,010 nm with visible light filtering epoxy.

Optek Technology, Inc.    Carrollton, TX 75006-6905
May 13, 2008 Suited for space-constrained applications, SMT phototransistors include silicon phototransistor and photodarlington outputs that provide high photo sensitivity for automatic mounting and position sensing equipment. OP500/501 Series and OP520/521 Series feature 150° and 160° viewing angle as well as 1.5 mW/cm² and 5.0 mW/cm² apertured power, respectively. OP525 Series and OP580 Series have 1.5 mW/cm² and 5.0 mW/cm² apertured power as well as 25° and 100° viewing angle, respectively.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Apr 17, 2008 Including Models VEMT3700, VEMT3700F, and VEMT4700, VEMT Series phototransistors have 2 µsec rise and fall times and ±60° angle of half intensity. Compatible with lead-free reflow soldering processes according to JEDEC-STD-020D, devices feature optical/electrical/mechanical compatibility to serve as pin-to-pin and functional equivalents for TEMT series phototransistors. Units suit object/proximity sensing, optical switching, shaft encoding, data transmission, and touch key applications.

Optek Technology, Inc.    Carrollton, TX 75006-6905
Mar 31, 2006 Housed in miniature, surface mount package measuring 0.10 x 0.08 in., Series OP570 NPN Phototransistors provide collector-emitter breakdown voltages of 30 V, collector current of 20 mA, and power dissipation of 130 mW. On-state collector current is 2.5 mA min and collector-emitter dark current is 100 nA max. Operating from -25 to +85°C, RoHS-compliant units are suited for non-contact position sensing, infrared data acquisition, machine automation, and optical encoders.

Optek Technology, Inc.    Carrollton, TX 75006-6905
Nov 30, 2005 Miniature, SMT Series OP520/OP521 exhibits response times of 15 µs with peak response to 880 nm wavelength light. Model OP520 features opaque lens to shield it from ambient light, while Model OP521 has water clear lens. Silicon NPN phototransistors are RoHS-compliant and characterized at collector-emitter voltage of 30 V, emitter-collector voltage of 5 V, and collector current of 20 mA. Power dissipation is 75 mW at 25°C and operating temperature is -25 to +85°C.

Fairchild Semiconductor    South Portland, ME 04106
Apr 03, 2003 QVE00033 phototransistor infrared transmissive switch with miniature infrared sidelookers is for non-contact switching in disk drives, card detectors, and controllers. Optical switch has temperature resistant black plastic housing and is 7.50 x 4.05 x 5.40 mm. GaAs LED faces silicon phototransistor across 2 mm gap with 0.4 mm aperture. Peak transmission wavelength is infrared at 940 nm and operating temperature is -55 to 100°C.