Photodiode Photodetectors

Optics & Photonics, Electronic Components & Devices

Silicon Photodiodes minimize dead areas on edges of devices.

September 1, 2015

Featuring single-channel, back-illuminated design, BI-SMT Photodetector Series is suited for X-ray inspection, computed tomography, and general industrial tasks. Model 33BI-SMT features active area of 5.76 mm²  and dimensions of 2.4 x 2.4 mm, while Model 55BI-SMT has 19.36 mm² active area and 4.4 x 4.4 mm dimensions. With 9.4 x 9.4 mm dimensions, Model 1010BI-SMT features larger 88.36 mm² active area. Devices operate from -20 to +60°C and offer easy coupling to scintillators. Read More

Optics & Photonics, Electronic Components & Devices

Photodiode features 4.1 mm diameter active area.

August 24, 2015

With responsivity under test conditions at 254 nm, Model UVG12 features minimum A/W of 0.105, typical response of 0.115, and max response of 0.125. Photodiode is designed for detection from 193–400 nm and operates at 100% internal quantum efficiency in UV and visible regions. Extremely stable, 13 mm² device exhibits less than 2% drop in responsivity after exposure to megajoules/cm² of 254 nm light. Typical applications include laser power monitoring and photolithography. Read More

Optics & Photonics, Electronic Components & Devices

Silicon Avalanche Photodiodes suit extreme low light conditions.

June 8, 2015

Suited for applications with 400–1,100 nm wavelength, Silicon Avalanche photodiodes (Si APDs) are optical detectors that come in hermetic TO Cans and feature internal gain mechanism, rise times as low as 300 psec, and high sensitivity in NIR region. Optical sensitivity peak is optimized for 800 or 905 nm, and standard versions are available with 200, 500, and 800 µm active diameter. Additional characteristics include 80–200 V breakdown voltage and frequency response up to 1 GHz. Read More

Optics & Photonics, Electronic Components & Devices, Vision Systems

IR Emitter/PIN Photodiode suit oximeter detector applications.

June 2, 2015

Measuring 6 x 4.8 x 1.1 mm each, IRR60-48C/TR8 SMT Infrared Emitting Diode, together with PD60-48C/TR8 PIN Photodiode feature optimized wavelengths of red 660 nm and infrared 905 nm, enabling accurate oximeter diagnosis. Infrared 905 nm can also be customized upon request to 940 nm or 910 nm. Both IRR60-48C/TR8 and PD60-48C/TR8 are discrete designs which allow feasibility on use, no matter if oximeter requires transmission or reflective design. Read More

Optics & Photonics, Electronic Components & Devices

High-Speed Photoreceiver features variable gain.

May 14, 2015

Using InGaAs or Si photodiodes followed by variable gain transimpedance amplifier, Model OE-300 covers 320–1,700 nm wavelength range. Unit has switchable gain from 102 to 108 V/A giving precise measurements within wide dynamic range from nanowatts up to 10 mW optical power. Using free space input option, OE-300 works with standard optical accessories like tubes and lenses. FC and SMA optical fiber inputs are also available. Read More

Electronic Components & Devices, Optics & Photonics

Photodiode provides 331 mm² of active area.

December 23, 2014

Housed in windowless ceramic package with 22.05 x 15.85 mm rectangular active area, Model SXUV300C detects energy from extreme ultraviolet wavelengths of 1–1,000 nm. Device offers sizeable surface for reflective scatter measurements of high-powered UV lasers, and provides stable responsivity even after prolonged exposure to high-powered UV radiation. Read More

Electronic Components & Devices, Optics & Photonics

Automotive-Grade PIN Photodiodes have 7.5 mm² sensitive area.

December 19, 2014

High-speed silicon PIN photodiodes VEMD5010X01 and VEMD5110X01 come in top-view, SMT packages measuring 5 x 4 x 0.9 mm. For detection of visible and NIR radiation, VEMD5010X01's free cavity is filled with clear epoxy for 430–1,100 nm sensitivity range. For 790–1,050 nm IR applications, VEMD5110X01 utilizes black daylight filtering epoxy and is matched with 850–940 nm IR emitters. Both are AEC-Q101-qualified devices with reverse light current of 48 µA and dark current of 2 nA. Read More

Electronic Components & Devices, Optics & Photonics

Responsivity-Optimized Photodiode features 331 mm² active area.

December 18, 2014

Able to detect energy from extreme UV wavelengths of 1–1,000 nm, SXUV300C features 22.05 x 15.85 mm active area. This offers sizable surface for reflective scatter measurements of high-powered UV lasers. Providing stable responsivity even after prolonged exposure to high-powered UV radiation, product comes in windowless package that enables responsivity to 1 nm and is suited for use in new or existing, high-powered UV laser-monitoring systems. Read More

Sensors, Monitors & Transducers, Electronic Components & Devices, Optics & Photonics

Photodiode offers 5 mm² active area in quadrant configuration.

November 25, 2014

Resistant to radiation damage from UV lasers, SXUVPS4 multi-element detector can withstand 4 days of exposure to 10 eV 1016 photons/cm² without degradation in responsivity. Photodiodes, supplied in TO-5 package that facilitates integration into new or existing systems, provide 0.125–0.02 A/W over 10–200 nm wavelength range. Circular detection surface is optimized for precise alignment of lasers with 4 elements, each offering 1.25 mm² active area. Read More

Electronic Components & Devices, Optics & Photonics

High-Speed Photodiode features 5 mm circular active area.

October 3, 2014

Suitable for extreme UV detection covering 1–200 nm, Model SXUV20HS1 dissipates optical energy of high-powered UV lasers without typical measurement degradation that occurs with prolonged exposure to UV. Unit features 19.7 mm² sensitive area, 5 micron grid lines, and 100 micron pitch, as well as 5 MΩ shunt resistance and capacitance from 200–800 pF. With reverse breakdown voltage at 160 V and max rise time of 2 ns, photodiode is suited for photolithography applications. Read More

Electronic Components & Devices, Optics & Photonics

Silicon PIN Photodiodes offer sensitive area of 0.85 mm².

September 12, 2014

Available in clear- and black-epoxy 1206 surface-mount packages with 900 nm and 950 nm wavelengths of peak sensitivity, respectively, Models VEMD6010X01 and VEMD6110X01 provide reverse light current of 9.5 µA and low dark current of 1 nA. AEC-Q101-qualified devices are optimized for photo detection in light curtains, light barriers, metering systems, and rain/sun sensors. Measuring 4 x 2 x 1.05 mm, RoHS-compliant units feature ±60° angles of half intensity and temperature range of -40 to +110°C. Read More

Electronic Components & Devices, Optics & Photonics

Windowless Photodiode features circular active area.

August 21, 2014

Housed in TO-39, 3-pin windowless package that delivers responsivity down to 1 nm, Model SXUV features active area of ∅2.5 mm and minimum shunt resistance of 20 MΩ at ±10 mV. Additional device parameters include reverse breakdown voltage of 20 V, with capacitance of 1 nF and response time of 1–2 ns. Operating from -10 to 40°C ambient, photodiode is suited for high power laser monitoring at wavelengths from 1–200 nm, or other tasks that require stable photodiode after EUV exposure. Read More

Electronic Components & Devices, Optics & Photonics

Avalanche Photodiode operates at 3.5 GHz.

May 16, 2014

Featuring 30 µm InGaAs mesa structure, LAPD 1550-30R offers broad voltage breakdown curve of 30–40 V with typical response of 37 V. Low-noise unit operates from -40 to 85° C and from 1,260–1,650 nm with typical operational wavelength at 1,550 nm. Housed in hermetically sealed, 3-pin, TO46 package with lens cap, RoHS-compliant photodiode is suited for applications in range-finding, optical time-domain reflectometers, and high-sensitivity line receivers. Read More

Electronic Components & Devices, Optics & Photonics

IR Emitter/Photodiode Pairs suit IR touch panels.

March 10, 2014

Supplied in 3 x 2 mm side-view surface-mount packages, AEC-Q101-qualified VSMB10940X01/VEMD10940FX01 have 1 mm profile, while VSMB11940X01/VEMD11940FX01 offer 0.6 mm profile. VSMB emitters, featuring GaAIAs multi quantum well technology, provide radiant intensity of 1 mW/sr at 20 mA, forward voltage of 1.3 at 20 mA, and switching time of 15 ns. VEMD silicon PIN photodiodes offer reverse light current of 1.1 µA and 3 µA, respectively, with radiant sensitivity from 780–1,050 nm. Read More

Electronic Components & Devices, Optics & Photonics

Single Active Area Photodiode permits detection to 1 nm.

January 10, 2014

Offering stable response after exposure to EUV/UV conditions, SXUV100 features 100 mm² active area. Sensitive device is operational from 1–1,000 nm, with peak photon responsivity at 0.27 A/W (at 1 nm) and 0.33 A/W (at 850 nm). Other characteristics include 10 MΩ shunt resistance @ ±10 mV, 6 nF typ capacitance, and 250 nsec typ response time. Optimal applications include detection of 13.5 nm wavelengths or any high-power density source monitoring from 1–150 nm. Read More

Electronic Components & Devices, Optics & Photonics

Quadrant Photodiode offers 5 mm² active area in each quadrant.

November 22, 2013

Housed in TO-5 windowless package with 5-pin header, Model SXUVPS4C features light responsivity from 1–1,000 nm and shunt resistance of 100 MΩ, making it suitable for 2 axes-positional-centering applications for lasers in 13.5–200 nm wavelength range. Operating and storage temperatures range from -10 to 40°C ambient and from -20 to 80°C in nitrogen or vacuum conditions. Max junction temperature is 70°C and lead-soldering temperature is 260°C at 0.080 in. from case for 10 sec. Read More

Electronic Components & Devices, Optics & Photonics

Radiation-Hard Photodiode is suited for electron detection.

October 10, 2013

With circular active area, 20 mm² UVG20C offers 100% internal quantum efficiency. Absence of surface dead region results in 100% collection efficiency. Radiation-hard, junction-passivating, oxynitride protective entrance window makes device stable even after exposure to flux of UV photons; responsivity degradation is <2% after MJ/cm² of 254 nm and tens of kilojoules/cm² of 193 nm photon exposure. Typ values include 1.7 µsec rise time, 200 MΩ shunt resistance, and 4 nF capacitance. Read More

Electronic Components & Devices, Optics & Photonics

Absolute Photodiode features 100 mm² active area.

September 19, 2013

Delivering 100% internal quantum efficiency, Model UVG100 is suited for applications that require extreme stability for detection of vacuum UV and extreme UV photons. Oxynitride front window ensures successful operation without performance degradation that occurs with high humidity. Under test conditions at 254 nm, responsivity is 0.08 min, 0.09 typ, and 0.13 max A/W. Additional specifications include max rise time of 10 µs at 10 V and  minimum shunt resistance of 20 MΩ at ±10 V. Read More

Electronic Components & Devices, Optics & Photonics

High-Speed Photo Detectors offer ±35° angle of half sensitivity.

August 13, 2013

Offered with or without daylight blocking filters, AEC-Q101-qualified photo detectors are RoHS-compliant and halogen-free and come in miniature gullwing, reverse gullwing, and side-view packages with wide-view dome lenses. While VEMD2xx3(SL) PIN photodiodes have typ output current of 10 µA and dark current of 1 nA, VEMT2xx3(SL) phototransistors have typ output of 2.7 mA. Typical photo currents are 10 µA for photodiodes and 2.7 mA for phototransistors at 1 mW/cm² and 950 nm. Read More

Electronic Components & Devices, Optics & Photonics

Multi-Element Photodiode suits electron detection, bolometry.

July 18, 2013

Supplied in 22-pin, dual in-line package with 100% internal quantum efficiency, 20-element AXUV20ELG is suited for measurement of minute amounts of radiant energy. It can also be used for electron detection, providing EUV-UV and UV-VIS-NIR photon responsivity measured in amperes per watt. Along with 0.75 x 4.1 mm active area and 3 mm² sensitive area per element, features include 25 V typ reverse breakdown voltage, 40 pF max capacitance, 200 nsec rise time, and 100 MΩ min shunt resistance. Read More