Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 24, 2012 For IR and visible light sources, TEFD4300 is clear epoxy device with sensitivity range of 350-1,120 nm. For light sources in IR wavelength from 770-1,070 nm, TEFD4300F is black epoxy device with daylight blocking filter matched with 850-950 nm IR emitters. Both silicon PIN photodiodes offer 17 µA reverse photo current and ±20° angle of half sensitivity. Other features include switching times down to 10 ns, 0.1%/K temperature coefficient of light current, and -40 to +100°C operating range.

Opto Diode Corp.    Newbury Park, CA 91320
Nov 04, 2011 Featuring 100 mm² active area, IRD SXUV 100 Series has nitrided metal silicide front window that permits operation without loss of performance in high humidity and other environmental conditions that normally require sealed packages. Diodes with single active areas are available from 1-576 mm², and quadrant diodes with several central openings may also be specified. When tested, devices revealed no observable responsivity loss after exposure to billions of 157 and 193 nm pulses.

Opto Diode Corp.    Newbury Park, CA 91320
Feb 16, 2011 Featuring 10 x 10 mm active area, IRD AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, allowing absolute measurement of X-ray flux with energies of 100 keV and beyond. Unit requires no external voltage for operation, operates at room temperature, and provides up to 1 Gigarad of radiation hardness. Photodiodes with directly-deposited, thin-metallic filters are available for reducing response to visible light.

Ophir-Spiricon Inc.    Logan, UT 84321
Nov 16, 2010 Designed to measure temporal pulse shape of lasers or other light sources, FPS-1 Fast Photodetector consists of photodiode sensor that handles wavelengths from 190-1,100 nm. Unit's 50 W load measures ns high peak power pulses, while 10 KW load measures longer and lower peak power pulses. Input can be direct beam or from fiber connection. Operating off battery or wall cube power supply, detector is available with optional ND filters.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Jul 30, 2010 Model VEMD25x0X01 high-speed silicon PIN photodiodes offer 12 µA light current and spectral sensitivity range of 350-1,120 nm, while VEMT25x0X01 NPN planar phototransistors offer light current of 6 mA and spectral sensitivity from 470-1,090 nm. Sensitive to visible and NIR radiation, both photo detectors feature 1 nA dark current, ±15° angle of half sensitivity, and temperature range of -40 to +100°C. They are available in 1.8 mm gullwing and reverse gullwing SMT packages.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Oct 27, 2009 Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 µA and spectral sensitivity range of 470-1,090 nm or 750-1,010 nm with visible light filtering epoxy.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 17, 2009 Operating from 550-720 nm, selective wavelength photodiode, ODD-660W suits fluorescence detection, color sensors, daylight sensors, light barriers, and medical diagnostics application. Hermetically-sealed unit features spectral bandwidth of 80 nm, storage and operating temperature between -30 to 85°C, and lead soldering temperature of up to 260°C. It provides low dark current without optical filters.

Opto Diode Corp.    Newbury Park, CA 91320
Jun 09, 2009 Designed for automotive and colorimetry industries, ODD-525W has active area of 0.62 mm², and peak sensitivity response of 525 nm. Features included are spectral bandwidth of 70 nm, and storage and operating temperatures range between -30°C to 85°C and lead soldering temperature at 260°C. Available in hermetically sealed standard TO-46 can, unit can be used in auto light-dimming, fluorescence detection, color sensors, and daylight detection tasks.

Opto Diode Corp.    Newbury Park, CA 91320
May 08, 2009 ODD-470W features spectral bandwidth of 100 nm and operates between 380-540 nm with peak sensitivity response at 470 nm. With low dark current and no optical filters used, photodetector is suited for use in color sensors, fluorescence detection, and medical diagnostic applications. Hermetically sealed, standard TO-46 can facilitates installation into existing or new systems. Storage and operating temperatures range from -30° to 85°C and lead soldering temperature is at 260°C.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 16, 2009 Supplied in 0805-sized, SMT package with 0.85 mm profile and 2-pin connection, AEC-Q101-Qualified TEMD6200FX01 reacts to light for automatic control of LCD brightness and keypad backlighting in automotive applications. Integrated IR filtering epoxy technology matches spectral sensitivity of human eye, with minimal sensitivity to light beyond visible range. Characteristics include angle of half sensitivity of ±60°, radiant sensitive area of 0.3 mm², and peak sensitivity of 540 nm.

Discovery Semiconductors Inc.    Ewing, NJ 08628
Feb 10, 2009 Designed for 40 Gb/s and 100 Gb/s optical communications, Quad InGaAs Photodiode Arrays consist of 4 photodiodes monolithically integrated on common InP substrate. Diodes are available in 10, 30, 40, or 50 µm diameters and feature RF bandwidth of 10, 15, 20, or 40 GHz. With optical power handling exceeding +12dBm for each photodiode, arrays are suited for 100 Gb/s Long-Haul Pol-Mux (D)QPSK, 40 Gb/s Long-Haul (D)QPSK, and 40G/100G parallel networking.

International Radiation Detectors    Torrance, CA 90505
Jan 20, 2009 AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, enabling absolute measurement of X-ray flux with energies 100 keV and beyond. Requiring no external voltage, detector has 10 x 10 mm square active area with room-temperature operation. Nitrided-oxide front window provides up to one Gigarad (SiO2) of radiation hardness. Photodiodes with directly-deposited, thin-metallic filters are available.

Opto Diode Corp.    Newbury Park, CA 91320
Nov 17, 2008 Blue/green enhanced silicon photodiode preamplifier, ODA-6WB-500M, operates between 400-1,100 nm, with peak spectral frequency at 940 nm. Sensitivity response is 140 V/µW (min 100), typ, at 450 nm. Transimpedance gain is 500 Mohm, with custom gains available upon request. Hermetically sealed in 6 mm² TO-39 housing, device operates in -25 to 100°C temperatures and is suited for fluorescence detection and low-light-level medical diagnostic applications.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 01, 2008 Hermetically sealed in TO-39 can for integration into new or existing systems, 5 mm² Model ODA-5WB-100K offers wavelength response of 28 V/mW at 450 nm, responsivity range from 400-1,100 nm, and peak spectral response of 940 nm. Blue/green-enhanced device features storage and operating temperatures from -25 to +100°C, and is suited for industrial and biomedical applications, such as fluorescence and phosphorescence.

Discovery Semiconductors Inc.    Ewing, NJ 08628
Feb 21, 2008 Offering linearity with third order intercept point as high as 50 dBm, 40 Gbps photodiode and receiver feature differential GPPO RF outputs that enable reception of all pre-amplified and unamplified 40G modulation formats. Receiver package interfaces to commercial CDR/DEMUX modules, and products address several modulation formats: ASK, DPSK, and DQPSK. Receiver configurations include single, balanced, and dual detection schemes, with and without transimpedance amplification.

Opto Diode Corp.    Newbury Park, CA 91320
Jan 25, 2008 Packaged in hermetically sealed TO-39 can, Near-Infrared (NIR) Red-Enhanced 5 mm² ODA-5W-100K Photodiode-Preamplifier combination device offers 500 MW gain. High-sensitivity, NIR wavelength response at 940 nm is 63 V/mW (typ) and 55 V/mW (min). With operating and storage temperature ranges of -25 to +100°C, product suits applications such as medical diagnostics, test and measurement, or other tasks that require low-light (under 1 mW) level detection.

International Radiation Detectors    Torrance, CA 90505
Nov 12, 2007 Featuring 10 x 10 mm² active area, SXUV 100 Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiode has nitrided metal silicide front window that permits operation without loss of performance in high-humidity and other environmental conditions that normally require sealed packages. Photon detector is designed for long-lifetime operation in high-particle flux environments without loss of responsivity. Diodes with single active areas are available from 1-576 mm².

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Aug 28, 2007 Qualified to AEC Q101 automotive standard, Models TEMD6010FX01 and TEMD5510FX01 utilize infrared filtering epoxy technology to match spectral sensitivity of human eye with minimal sensitivity to light beyond visible range. Photodiodes provide linear response to illuminance from 0.1 lux to 100 klux with lot-to-lot repeatability over extended operating temperature range of -40°C to +100°C. Units are RoHS compliant, free of halogens, and compatible with lead-free soldering.

Opto Diode Corp.    Newbury Park, CA 91320
Apr 03, 2007 With chip dimensions of .100 x .048 in. (per element), red enhanced ODD-3W-2 Bi-Cell Photodiode offers spectral response of 0.55 A/W at 900 nm and shunt resistance at 250 MW min. This low-noise product comes in TO-5 cans to facilitate integration and operates over -40 to +125°C range. Uses include position sensing applications, emitter alignment, test and measurement, and other industrial tasks where single axis nulling is required.

Hamamatsu    Bridgewater, NJ 08807 0910
Jul 19, 2006 Featuring 10 x 10 mm active area, S8664-1010 silicon APD (avalanche photodiode) is suited for design into analytical instruments for low-light-level measurement. Detector's spectral response range is 320-1000 nm, with peak wavelength at 600 nm. At 600 nm, quantum efficiency is approximately 85% and gain is 50. Featuring high sensitivity in visible spectrum, high gain, low noise, and low capacitance, unit comes in ceramic housing with epoxy resin window.