Opto Diode Corp.    Newbury Park, CA 91320
May 21, 2013 Supplied in 40-pin dual in-line package, AXUV16ELG has 2 x 5 mm active area, sensitive area of 10 mm² per element, and internal quantum efficiency (QE) rated at 100%. This 16-element photodiode, offering stable response after exposure to high energy electrons or photons, features reverse breakdown voltage at 25 V typ, capacitance of 40 pF, and rise time of 500 nsec. Storage and operating range is -10 to +40°C for ambient environments (-20 to +80°C for nitrogen or vacuum conditions).

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
May 15, 2013 IR emitters VSMG10850 (850 nm) and VSMB10940 (940 nm) and package-matched, high-speed silicon PIN photodiode VEMD10940F, with radiant sensitivity from 780–1,050 nm, offer ±75° angle of half intensity in 3 x 2 x 1 mm side-view SMT package. Offered in clear, untinted plastic packages, IR emitters provide radiant intensity of 1 mW/sr typ @ 20 mA and switching times of 15 nsec. Featuring daylight blocking filter, VEMD10940F offers reverse light current of 3 µA and dark current of 1 nA.

Newport Corp.    Irvine, CA 92606
Dec 19, 2012 Packaged in metal housing with integrated calibration-data storage and automatic OD3 attenuator On/Off position sensor, Series 918D-ST is available with 10 x 10 mm silicon, UV-enhanced silicon, or germanium photodetector. Models 918D-ST-IR,  918D-ST-SL, and 918D-ST-UV operate from 780–1,800 nm, 400–1,100 nm, and 200–1,100 nm, respectively. Supplied with NIST-traced calibration report, sensors are suitable for laser and other optical power measurements where space is limited.

JENOPTIK Optical Systems GmbH    07745 Jena   Germany
Oct 19, 2012 Able to detect predefined wavelength range without additional filter, photodiodes provide spectral receiving characteristics independent of angle of incidence of radiation. Wavelength-selective radiation detection diodes, made from materials such as GaP, AlGaN, AlGaAs, InGaAs, or SiC, are designed for spectral range of 150–1,750 nm and come in hermetically sealed housings. Thermally stable up to 125°C, products suit photometric applications requiring extended measurement (dynamic) range.

Osi Systems    Hawthorne, CA 90250
Oct 11, 2012 Comprised of silicon avalanche photodiodes optimized for operation in 800 nm wavelength region, APD Series 8-150 operates from -40 to +100°C max, supports bandwidths up to 1 GHz, and features 0.2, 0.5, 1.0, and 1.5 mm dia active areas. Hermetically sealed metal package is standard, and low temperature coefficients reach down to 0.45/V°C. Products are suited for optical fiber communication, laser range finder, and high-speed photometry applications.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 25, 2012 Suited for use in medical diagnostic applications, ODD-900-002 operates in spectral bandwidth from 400-1,100 nm with peak sensitivity of 940 nm. Typical responsivity is at 0.44 A/W, with typical reverse dark current at 5 nA and total capacitance at 25 pF typ. Operating from -25 to +85°C, photodiode can be stored at temperatures from -40 to +85°C and has soldering temperature of 260°C (5 sec max). Power dissipation is 150 mW at or below 25°C (free air temperature).

Opto Diode Corp.    Newbury Park, CA 91320
Jul 20, 2012 Featuring sensitivity from 730-1,100 nm with peak sensitivity at 940 nm, Model ODD-900-001 is suited for industrial photoelectric control applications. Electro-optical characteristics at 25°C include typical responsivity of 0.44 A/W, typical reverse dark current at 5 nA, total capacitance at 25 pF, and typical rise/fall times of 50/50 nSecs. Power dissipation is 150 mW or below at 25°C free air temperature.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 24, 2012 For IR and visible light sources, TEFD4300 is clear epoxy device with sensitivity range of 350-1,120 nm. For light sources in IR wavelength from 770-1,070 nm, TEFD4300F is black epoxy device with daylight blocking filter matched with 850-950 nm IR emitters. Both silicon PIN photodiodes offer 17 µA reverse photo current and ±20° angle of half sensitivity. Other features include switching times down to 10 ns, 0.1%/K temperature coefficient of light current, and -40 to +100°C operating range.

Opto Diode Corp.    Newbury Park, CA 91320
Nov 04, 2011 Featuring 100 mm² active area, IRD SXUV 100 Series has nitrided metal silicide front window that permits operation without loss of performance in high humidity and other environmental conditions that normally require sealed packages. Diodes with single active areas are available from 1-576 mm², and quadrant diodes with several central openings may also be specified. When tested, devices revealed no observable responsivity loss after exposure to billions of 157 and 193 nm pulses.

Opto Diode Corp.    Newbury Park, CA 91320
Feb 16, 2011 Featuring 10 x 10 mm active area, IRD AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, allowing absolute measurement of X-ray flux with energies of 100 keV and beyond. Unit requires no external voltage for operation, operates at room temperature, and provides up to 1 Gigarad of radiation hardness. Photodiodes with directly-deposited, thin-metallic filters are available for reducing response to visible light.

Ophir-Spiricon Inc.    Logan, UT 84321
Nov 16, 2010 Designed to measure temporal pulse shape of lasers or other light sources, FPS-1 Fast Photodetector consists of photodiode sensor that handles wavelengths from 190-1,100 nm. Unit's 50 W load measures ns high peak power pulses, while 10 KW load measures longer and lower peak power pulses. Input can be direct beam or from fiber connection. Operating off battery or wall cube power supply, detector is available with optional ND filters.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Jul 30, 2010 Model VEMD25x0X01 high-speed silicon PIN photodiodes offer 12 µA light current and spectral sensitivity range of 350-1,120 nm, while VEMT25x0X01 NPN planar phototransistors offer light current of 6 mA and spectral sensitivity from 470-1,090 nm. Sensitive to visible and NIR radiation, both photo detectors feature 1 nA dark current, ±15° angle of half sensitivity, and temperature range of -40 to +100°C. They are available in 1.8 mm gullwing and reverse gullwing SMT packages.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Oct 27, 2009 Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 µA and spectral sensitivity range of 470-1,090 nm or 750-1,010 nm with visible light filtering epoxy.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 17, 2009 Operating from 550-720 nm, selective wavelength photodiode, ODD-660W suits fluorescence detection, color sensors, daylight sensors, light barriers, and medical diagnostics application. Hermetically-sealed unit features spectral bandwidth of 80 nm, storage and operating temperature between -30 to 85°C, and lead soldering temperature of up to 260°C. It provides low dark current without optical filters.

Opto Diode Corp.    Newbury Park, CA 91320
Jun 09, 2009 Designed for automotive and colorimetry industries, ODD-525W has active area of 0.62 mm², and peak sensitivity response of 525 nm. Features included are spectral bandwidth of 70 nm, and storage and operating temperatures range between -30°C to 85°C and lead soldering temperature at 260°C. Available in hermetically sealed standard TO-46 can, unit can be used in auto light-dimming, fluorescence detection, color sensors, and daylight detection tasks.

Opto Diode Corp.    Newbury Park, CA 91320
May 08, 2009 ODD-470W features spectral bandwidth of 100 nm and operates between 380-540 nm with peak sensitivity response at 470 nm. With low dark current and no optical filters used, photodetector is suited for use in color sensors, fluorescence detection, and medical diagnostic applications. Hermetically sealed, standard TO-46 can facilitates installation into existing or new systems. Storage and operating temperatures range from -30° to 85°C and lead soldering temperature is at 260°C.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 16, 2009 Supplied in 0805-sized, SMT package with 0.85 mm profile and 2-pin connection, AEC-Q101-Qualified TEMD6200FX01 reacts to light for automatic control of LCD brightness and keypad backlighting in automotive applications. Integrated IR filtering epoxy technology matches spectral sensitivity of human eye, with minimal sensitivity to light beyond visible range. Characteristics include angle of half sensitivity of ±60°, radiant sensitive area of 0.3 mm², and peak sensitivity of 540 nm.

Discovery Semiconductors Inc.    Ewing, NJ 08628
Feb 10, 2009 Designed for 40 Gb/s and 100 Gb/s optical communications, Quad InGaAs Photodiode Arrays consist of 4 photodiodes monolithically integrated on common InP substrate. Diodes are available in 10, 30, 40, or 50 µm diameters and feature RF bandwidth of 10, 15, 20, or 40 GHz. With optical power handling exceeding +12dBm for each photodiode, arrays are suited for 100 Gb/s Long-Haul Pol-Mux (D)QPSK, 40 Gb/s Long-Haul (D)QPSK, and 40G/100G parallel networking.

International Radiation Detectors    Torrance, CA 90505
Jan 20, 2009 AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, enabling absolute measurement of X-ray flux with energies 100 keV and beyond. Requiring no external voltage, detector has 10 x 10 mm square active area with room-temperature operation. Nitrided-oxide front window provides up to one Gigarad (SiO2) of radiation hardness. Photodiodes with directly-deposited, thin-metallic filters are available.

Opto Diode Corp.    Newbury Park, CA 91320
Nov 17, 2008 Blue/green enhanced silicon photodiode preamplifier, ODA-6WB-500M, operates between 400-1,100 nm, with peak spectral frequency at 940 nm. Sensitivity response is 140 V/µW (min 100), typ, at 450 nm. Transimpedance gain is 500 Mohm, with custom gains available upon request. Hermetically sealed in 6 mm² TO-39 housing, device operates in -25 to 100°C temperatures and is suited for fluorescence detection and low-light-level medical diagnostic applications.