ThomasNet News Logo
Sign Up | Log In | ThomasNet Home | Promote Your Business
 Journals
Industry Market Trends ®
Fluid & Gas Flow Journal
Machining Journal
Procurement Journal
Tech Trends Journal
 Industry News
Latest New Product News
Association & Government News
Thought Leaders
 Product News
Adhesives and Sealants
Agricultural and Farming Products
Architectural and Civil Engineering Products
Automatic ID
Chemical Processing and Waste Management
Cleaning Products and Equipment
Communication Systems and Equipment
Computer Hardware and Peripherals
Construction Equipment and Supplies
Controls and Controllers
Display and Presentation Equipment
Electrical Equipment and Systems
Electronic Components and Devices
Explosives, Armaments and Weaponry
Fasteners and Hardware
Fluid and Gas Flow Equipment
Food Processing and Preparation
Green & Clean
Health, Medical and Dental Supplies and Equipment
HVAC
Labels, Tags, Signage and Equipment
Laboratory and Research Supplies and Equipment
Lubricants
Machinery and Machining Tools
Material Handling and Storage
Materials and Material Processing
Mechanical Components and Assemblies
Mechanical Power Transmission
Mining, Oil Drilling & Refining
Mounting and Attaching Products
Non-Industrial Products
Optics and Photonics
Packaging Products & Equipment
Paints and Coatings
Plant Furnishings and Accessories
Portable Tools
Printing and Duplicating Equipment
Retail and Sales Equipment
Robotics
Safety and Security Equipment
Sensors, Monitors and Transducers
Services
Software
Test and Measuring Instruments
Textile Industry Products
Thermal and Heating Equipment
Timers and Clocks
Transportation Industry Products
Vision Systems
Waste Handling Equipment
Welding Equipment and Supplies
 Press Releases
Products in the News
Company News
Mergers & Acquisitions
People in the News
Literature & Websites
 Resources
News Delivery Options
Newsletter Archive
SME
Browse Categories
Browse Companies
Mobile Edition
PR Resources
Licensing
Advertising
Call for Contributors, Guest Writers and Submissions
How to Write an effective Press Release
Trade Associations
Optics & Photonics -> Optical Measuring Devices, Sensors & Tools -> Photodetectors -> Photodiode Photodetectors


Photodiode Photodetectors




(Showing headlines 1 - 20)   more ....

Windowless Photodiode features circular active area.

Opto Diode Corp.    Newbury Park, CA 91320
Aug 21, 2014 Housed in TO-39, 3-pin windowless package that delivers responsivity down to 1 nm, Model SXUV features active area of ∅2.5 mm and minimum shunt resistance of 20 MΩ at ±10 mV. Additional device parameters include reverse breakdown voltage of 20 V, with capacitance of 1 nF and response time of 1–2 ns. Operating from -10 to 40°C ambient, photodiode is suited for high power laser monitoring at wavelengths from 1–200 nm, or other tasks that require stable photodiode after EUV exposure.

Avalanche Photodiode operates at 3.5 GHz.

Avalanche Photodiode operates at 3.5 GHz.

Laser Diode, Inc.    Edison, NJ 08820
May 16, 2014 Featuring 30 µm InGaAs mesa structure, LAPD 1550-30R offers broad voltage breakdown curve of 30–40 V with typical response of 37 V. Low-noise unit operates from -40 to 85° C and from 1,260–1,650 nm with typical operational wavelength at 1,550 nm. Housed in hermetically sealed, 3-pin, TO46 package with lens cap, RoHS-compliant photodiode is suited for applications in range-finding, optical time-domain reflectometers, and high-sensitivity line receivers.

IR Emitter/Photodiode Pairs suit IR touch panels.

IR Emitter/Photodiode Pairs suit IR touch panels.

Vishay    Malvern, PA 19355
Mar 10, 2014 Supplied in 3 x 2 mm side-view surface-mount packages, AEC-Q101-qualified VSMB10940X01/VEMD10940FX01 have 1 mm profile, while VSMB11940X01/VEMD11940FX01 offer 0.6 mm profile. VSMB emitters, featuring GaAIAs multi quantum well technology, provide radiant intensity of 1 mW/sr at 20 mA, forward voltage of 1.3 at 20 mA, and switching time of 15 ns. VEMD silicon PIN photodiodes offer reverse light current of 1.1 µA and 3 µA, respectively, with radiant sensitivity from 780–1,050 nm.

Single Active Area Photodiode permits detection to 1 nm.

Single Active Area Photodiode permits detection to 1 nm.

Opto Diode Corp.    Newbury Park, CA 91320
Jan 10, 2014 Offering stable response after exposure to EUV/UV conditions, SXUV100 features 100 mm² active area. Sensitive device is operational from 1–1,000 nm, with peak photon responsivity at 0.27 A/W (at 1 nm) and 0.33 A/W (at 850 nm). Other characteristics include 10 MΩ shunt resistance @ ±10 mV, 6 nF typ capacitance, and 250 nsec typ response time. Optimal applications include detection of 13.5 nm wavelengths or any high-power density source monitoring from 1–150 nm.

Quadrant Photodiode offers 5 mm² active area in each quadrant.

Quadrant Photodiode offers 5 mm² active area in each quadrant.

Opto Diode Corp.    Newbury Park, CA 91320
Nov 22, 2013 Housed in TO-5 windowless package with 5-pin header, Model SXUVPS4C features light responsivity from 1–1,000 nm and shunt resistance of 100 MΩ, making it suitable for 2 axes-positional-centering applications for lasers in 13.5–200 nm wavelength range. Operating and storage temperatures range from -10 to 40°C ambient and from -20 to 80°C in nitrogen or vacuum conditions. Max junction temperature is 70°C and lead-soldering temperature is 260°C at 0.080 in. from case for 10 sec.

Radiation-Hard Photodiode is suited for electron detection.

Radiation-Hard Photodiode is suited for electron detection.

Opto Diode Corp.    Newbury Park, CA 91320
Oct 10, 2013 With circular active area, 20 mm² UVG20C offers 100% internal quantum efficiency. Absence of surface dead region results in 100% collection efficiency. Radiation-hard, junction-passivating, oxynitride protective entrance window makes device stable even after exposure to flux of UV photons; responsivity degradation is <2% after MJ/cm² of 254 nm and tens of kilojoules/cm² of 193 nm photon exposure. Typ values include 1.7 µsec rise time, 200 MΩ shunt resistance, and 4 nF capacitance.

Absolute Photodiode features 100 mm² active area.

Opto Diode Corp.    Newbury Park, CA 91320
Sep 19, 2013 Delivering 100% internal quantum efficiency, Model UVG100 is suited for applications that require extreme stability for detection of vacuum UV and extreme UV photons. Oxynitride front window ensures successful operation without performance degradation that occurs with high humidity. Under test conditions at 254 nm, responsivity is 0.08 min, 0.09 typ, and 0.13 max A/W. Additional specifications include max rise time of 10 µs at 10 V and  minimum shunt resistance of 20 MΩ at ±10 V.

High-Speed Photo Detectors offer ±35° angle of half sensitivity.

High-Speed Photo Detectors offer ±35° angle of half sensitivity.

Vishay    Malvern, PA 19355
Aug 13, 2013 Offered with or without daylight blocking filters, AEC-Q101-qualified photo detectors are RoHS-compliant and halogen-free and come in miniature gullwing, reverse gullwing, and side-view packages with wide-view dome lenses. While VEMD2xx3(SL) PIN photodiodes have typ output current of 10 µA and dark current of 1 nA, VEMT2xx3(SL) phototransistors have typ output of 2.7 mA. Typical photo currents are 10 µA for photodiodes and 2.7 mA for phototransistors at 1 mW/cm² and 950 nm.

Multi-Element Photodiode suits electron detection, bolometry.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 18, 2013 Supplied in 22-pin, dual in-line package with 100% internal quantum efficiency, 20-element AXUV20ELG is suited for measurement of minute amounts of radiant energy. It can also be used for electron detection, providing EUV-UV and UV-VIS-NIR photon responsivity measured in amperes per watt. Along with 0.75 x 4.1 mm active area and 3 mm² sensitive area per element, features include 25 V typ reverse breakdown voltage, 40 pF max capacitance, 200 nsec rise time, and 100 MΩ min shunt resistance.

Sixteen-Element Photodiode suits UV/EUV or electron detection.

Sixteen-Element Photodiode suits UV/EUV or electron detection.

Opto Diode Corp.    Newbury Park, CA 91320
May 21, 2013 Supplied in 40-pin dual in-line package, AXUV16ELG has 2 x 5 mm active area, sensitive area of 10 mm² per element, and internal quantum efficiency (QE) rated at 100%. This 16-element photodiode, offering stable response after exposure to high energy electrons or photons, features reverse breakdown voltage at 25 V typ, capacitance of 40 pF, and rise time of 500 nsec. Storage and operating range is -10 to +40°C for ambient environments (-20 to +80°C for nitrogen or vacuum conditions).

IR Emitters and Photodiode are suited for IR touch panels.

IR Emitters and Photodiode are suited for IR touch panels.

Vishay    Malvern, PA 19355
May 15, 2013 IR emitters VSMG10850 (850 nm) and VSMB10940 (940 nm) and package-matched, high-speed silicon PIN photodiode VEMD10940F, with radiant sensitivity from 780–1,050 nm, offer ±75° angle of half intensity in 3 x 2 x 1 mm side-view SMT package. Offered in clear, untinted plastic packages, IR emitters provide radiant intensity of 1 mW/sr typ @ 20 mA and switching times of 15 nsec. Featuring daylight blocking filter, VEMD10940F offers reverse light current of 3 µA and dark current of 1 nA.

Wand Photodiode Sensors include built-in temperature sensing.

Wand Photodiode Sensors include built-in temperature sensing.

Newport Corp.    Irvine, CA 92606
Dec 19, 2012 Packaged in metal housing with integrated calibration-data storage and automatic OD3 attenuator On/Off position sensor, Series 918D-ST is available with 10 x 10 mm silicon, UV-enhanced silicon, or germanium photodetector. Models 918D-ST-IR,  918D-ST-SL, and 918D-ST-UV operate from 780–1,800 nm, 400–1,100 nm, and 200–1,100 nm, respectively. Supplied with NIST-traced calibration report, sensors are suitable for laser and other optical power measurements where space is limited.

Photodiodes feature angle-independent response spectrum.

JENOPTIK Optical Systems GmbH    07745 Jena   Germany
Oct 19, 2012 Able to detect predefined wavelength range without additional filter, photodiodes provide spectral receiving characteristics independent of angle of incidence of radiation. Wavelength-selective radiation detection diodes, made from materials such as GaP, AlGaN, AlGaAs, InGaAs, or SiC, are designed for spectral range of 150–1,750 nm and come in hermetically sealed housings. Thermally stable up to 125°C, products suit photometric applications requiring extended measurement (dynamic) range.

Silicon Avalanche Photodiodes operate in 800 nm region.

Silicon Avalanche Photodiodes operate in 800 nm region.

Osi Systems    Hawthorne, CA 90250
Oct 11, 2012 Comprised of silicon avalanche photodiodes optimized for operation in 800 nm wavelength region, APD Series 8-150 operates from -40 to +100°C max, supports bandwidths up to 1 GHz, and features 0.2, 0.5, 1.0, and 1.5 mm dia active areas. Hermetically sealed metal package is standard, and low temperature coefficients reach down to 0.45/V°C. Products are suited for optical fiber communication, laser range finder, and high-speed photometry applications.

SMT Photodiode can integrate into new/existing systems.

SMT Photodiode can integrate into new/existing systems.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 25, 2012 Suited for use in medical diagnostic applications, ODD-900-002 operates in spectral bandwidth from 400-1,100 nm with peak sensitivity of 940 nm. Typical responsivity is at 0.44 A/W, with typical reverse dark current at 5 nA and total capacitance at 25 pF typ. Operating from -25 to +85°C, photodiode can be stored at temperatures from -40 to +85°C and has soldering temperature of 260°C (5 sec max). Power dissipation is 150 mW at or below 25°C (free air temperature).

Surface Mount Photodiode includes daylight filter.

Surface Mount Photodiode includes daylight filter.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 20, 2012 Featuring sensitivity from 730-1,100 nm with peak sensitivity at 940 nm, Model ODD-900-001 is suited for industrial photoelectric control applications. Electro-optical characteristics at 25°C include typical responsivity of 0.44 A/W, typical reverse dark current at 5 nA, total capacitance at 25 pF, and typical rise/fall times of 50/50 nSecs. Power dissipation is 150 mW or below at 25°C free air temperature.

High-Speed PIN Photodiodes come in T1 packages with 3 mm lens.

High-Speed PIN Photodiodes come in T1 packages with 3 mm lens.

Vishay    Malvern, PA 19355
Feb 24, 2012 For IR and visible light sources, TEFD4300 is clear epoxy device with sensitivity range of 350-1,120 nm. For light sources in IR wavelength from 770-1,070 nm, TEFD4300F is black epoxy device with daylight blocking filter matched with 850-950 nm IR emitters. Both silicon PIN photodiodes offer 17 µA reverse photo current and ±20° angle of half sensitivity. Other features include switching times down to 10 ns, 0.1%/K temperature coefficient of light current, and -40 to +100°C operating range.

UV/EUV Photodiodes suit high particle flux environments.

UV/EUV Photodiodes suit high particle flux environments.

Opto Diode Corp.    Newbury Park, CA 91320
Nov 04, 2011 Featuring 100 mm² active area, IRD SXUV 100 Series has nitrided metal silicide front window that permits operation without loss of performance in high humidity and other environmental conditions that normally require sealed packages. Diodes with single active areas are available from 1-576 mm², and quadrant diodes with several central openings may also be specified. When tested, devices revealed no observable responsivity loss after exposure to billions of 157 and 193 nm pulses.

Absolute X-ray Photodiodes target solar spectrum studies.

Absolute X-ray Photodiodes target solar spectrum studies.

Opto Diode Corp.    Newbury Park, CA 91320
Feb 16, 2011 Featuring 10 x 10 mm active area, IRD AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, allowing absolute measurement of X-ray flux with energies of 100 keV and beyond. Unit requires no external voltage for operation, operates at room temperature, and provides up to 1 Gigarad of radiation hardness. Photodiodes with directly-deposited, thin-metallic filters are available for reducing response to visible light.

Photodiode Detector provides 1 ns response time.

Ophir-Spiricon, Inc.    Logan, UT 84321
Nov 16, 2010 Designed to measure temporal pulse shape of lasers or other light sources, FPS-1 Fast Photodetector consists of photodiode sensor that handles wavelengths from 190-1,100 nm. Unit's 50 W load measures ns high peak power pulses, while 10 KW load measures longer and lower peak power pulses. Input can be direct beam or from fiber connection. Operating off battery or wall cube power supply, detector is available with optional ND filters.




(Showing headlines 1 - 20)   more ....


Home  |  My ThomasNet News®  |  Industry Market Trends®  |  Submit Release  |  Advertise  |  Contact News  |  About Us
Brought to you by Thomasnet.com        Browse ThomasNet Directory

Copyright © 2014 Thomas Publishing Company. All Rights Reserved.
Terms of Use - Privacy Policy