Photodiode Photodetectors

Electronic Components & Devices, Optics & Photonics, Sensors, Monitors & Transducers, Test & Measuring Instruments, Vision Systems

WDR SWIR Camera Systems serve fast triggered imaging applications.

June 16, 2016

Without any processing or tone mapping, New Imaging Technologies (NIT) wide-dynamic-range (WDR), indium gallium arsenide (InGaAs) SWIR sensors and camera systems deliver dynamic range >140 dB in one snapshot. InGaAs photodiode array features ROIC and comes in 640 x 512 (15 micron pitch) or 320 x 256 (25 micron pitch) pixel resolution; both operate in from 900–1,700 nm. Under all lighting conditions, internal Fixed Pattern Noise correction offers images with optimized uniformity. Read More

Electronic Components & Devices, Optics & Photonics

Automotive Grade PIN Photodiodes suit small signal detection.

March 2, 2016

Supplied in 3 low-profile, SMT package variants, AEC-Q101-qualified VEMDxx60X01 series features sensitive areas of 0.23 mm², 0.85 mm², and 7.5 mm². Linearity deviation of reverse light current is <1%, and reverse light current is available to 38 µA. For the detection of visible and NIR radiation, VEMD1060X01/5060X01/6060X01 are clear devices with a sensitivity range of 380–1,070 nm. For 700–1,070 nm IR applications, VEMD1160X01/5160X01/6160X01 are black devices with daylight blocking filter. Read More

Electronic Components & Devices, Optics & Photonics, Sensors, Monitors & Transducers

Photodetectors offer custom chip packaging.

February 4, 2016

Featuring spectral sensitivity of 400–1,100 nm, Silicon Detectors are suited for applications requiring high speed, consistency, and reliability, such as optical communications, medical diagnostics, barcode readers, and missile guidance. Die can be placed in variety of packages, from metal can TO-5, TO-8, and TO-18, to surface mount COB, flex circuits, and standard 3 mm and 5 mm plastic packages. In addition, assemblies can be customized with pre-amps, optical filters, and band pass filters. Read More

Electronic Components & Devices, Optics & Photonics, Sensors, Monitors & Transducers, Test & Measuring Instruments

Near-Infrared Detectors support back-facet laser-monitoring.

January 19, 2016

Featuring active area of 0.36 mm² and 0.70 mm², respectively, NXIR-RF36 and NXIR-RF70 Detectors are suited for integration with semiconductor lasers, including Fabry-Perot, distributed feedback, and vertical-cavity surface-emitting lasers. Devices have responsivity of 0.65 A/W at 850 nm, capacitance of 5 pF at 0 V, and shunt resistance greater than 200 MΩ. Suitable for use with YAG lasers, NXIR-5W has responsivity of 0.45 A/W at 1064 nm, low dark current of 1 nA, and 10 pF capacitance. Read More

Electronic Components & Devices, Optics & Photonics

Silicon Photodiodes minimize dead areas on edges of devices.

September 1, 2015

Featuring single-channel, back-illuminated design, BI-SMT Photodetector Series is suited for X-ray inspection, computed tomography, and general industrial tasks. Model 33BI-SMT features active area of 5.76 mm²  and dimensions of 2.4 x 2.4 mm, while Model 55BI-SMT has 19.36 mm² active area and 4.4 x 4.4 mm dimensions. With 9.4 x 9.4 mm dimensions, Model 1010BI-SMT features larger 88.36 mm² active area. Devices operate from -20 to +60°C and offer easy coupling to scintillators. Read More

Electronic Components & Devices, Optics & Photonics

Photodiode features 4.1 mm diameter active area.

August 24, 2015

With responsivity under test conditions at 254 nm, Model UVG12 features minimum A/W of 0.105, typical response of 0.115, and max response of 0.125. Photodiode is designed for detection from 193–400 nm and operates at 100% internal quantum efficiency in UV and visible regions. Extremely stable, 13 mm² device exhibits less than 2% drop in responsivity after exposure to megajoules/cm² of 254 nm light. Typical applications include laser power monitoring and photolithography. Read More

Electronic Components & Devices, Optics & Photonics

Silicon Avalanche Photodiodes suit extreme low light conditions.

June 8, 2015

Suited for applications with 400–1,100 nm wavelength, Silicon Avalanche photodiodes (Si APDs) are optical detectors that come in hermetic TO Cans and feature internal gain mechanism, rise times as low as 300 psec, and high sensitivity in NIR region. Optical sensitivity peak is optimized for 800 or 905 nm, and standard versions are available with 200, 500, and 800 µm active diameter. Additional characteristics include 80–200 V breakdown voltage and frequency response up to 1 GHz. Read More

Electronic Components & Devices, Optics & Photonics, Vision Systems

IR Emitter/PIN Photodiode suit oximeter detector applications.

June 2, 2015

Measuring 6 x 4.8 x 1.1 mm each, IRR60-48C/TR8 SMT Infrared Emitting Diode, together with PD60-48C/TR8 PIN Photodiode feature optimized wavelengths of red 660 nm and infrared 905 nm, enabling accurate oximeter diagnosis. Infrared 905 nm can also be customized upon request to 940 nm or 910 nm. Both IRR60-48C/TR8 and PD60-48C/TR8 are discrete designs which allow feasibility on use, no matter if oximeter requires transmission or reflective design. Read More

Electronic Components & Devices, Optics & Photonics

High-Speed Photoreceiver features variable gain.

May 14, 2015

Using InGaAs or Si photodiodes followed by variable gain transimpedance amplifier, Model OE-300 covers 320–1,700 nm wavelength range. Unit has switchable gain from 102 to 108 V/A giving precise measurements within wide dynamic range from nanowatts up to 10 mW optical power. Using free space input option, OE-300 works with standard optical accessories like tubes and lenses. FC and SMA optical fiber inputs are also available. Read More

Display & Presentation Equipment, Electronic Components & Devices, Laboratory and Research Supplies & Equipment, Optics & Photonics, Vision Systems

Excelitas Technologies® Exhibits Expanded Portfolio of Innovative Technology Solutions at Photonics West 2015

February 16, 2015

SAN FRANCISCO, CA – Excelitas Technologies Corp., a global technology leader focused on delivering innovative, customized photonics solutions today announced today it is exhibiting a broad array of its products at the SPIE Photonics West 2015 conference, which takes  place February 10-12 at The Moscone Center in San Francisco, California.  The event marks the first time both Excelitas and... Read More

Electronic Components & Devices, Optics & Photonics

Marktech Optoelectronics to Introduce Photodetectors at Photonics West

February 2, 2015

New detector products join Marktech’s wide range of emitter sensors ranging from deep UV 280nm to 1720nm short wave infrared and InGaAs/InP epitaxial wafers from 1.0um to 2.6um. Latham, NY – Marktech Optoelectronics is set to introduce its new line of photodetectors at the SPIE Photonics West Conference to be held in San Francisco’s Moscone Center February 7-12, 2015. Marktech’s new... Read More

Electronic Components & Devices, Optics & Photonics

Photodiode provides 331 mm² of active area.

December 23, 2014

Housed in windowless ceramic package with 22.05 x 15.85 mm rectangular active area, Model SXUV300C detects energy from extreme ultraviolet wavelengths of 1–1,000 nm. Device offers sizeable surface for reflective scatter measurements of high-powered UV lasers, and provides stable responsivity even after prolonged exposure to high-powered UV radiation. Read More

Electronic Components & Devices, Optics & Photonics

Automotive-Grade PIN Photodiodes have 7.5 mm² sensitive area.

December 19, 2014

High-speed silicon PIN photodiodes VEMD5010X01 and VEMD5110X01 come in top-view, SMT packages measuring 5 x 4 x 0.9 mm. For detection of visible and NIR radiation, VEMD5010X01's free cavity is filled with clear epoxy for 430–1,100 nm sensitivity range. For 790–1,050 nm IR applications, VEMD5110X01 utilizes black daylight filtering epoxy and is matched with 850–940 nm IR emitters. Both are AEC-Q101-qualified devices with reverse light current of 48 µA and dark current of 2 nA. Read More

Electronic Components & Devices, Optics & Photonics

Responsivity-Optimized Photodiode features 331 mm² active area.

December 18, 2014

Able to detect energy from extreme UV wavelengths of 1–1,000 nm, SXUV300C features 22.05 x 15.85 mm active area. This offers sizable surface for reflective scatter measurements of high-powered UV lasers. Providing stable responsivity even after prolonged exposure to high-powered UV radiation, product comes in windowless package that enables responsivity to 1 nm and is suited for use in new or existing, high-powered UV laser-monitoring systems. Read More

Electronic Components & Devices, Optics & Photonics, Sensors, Monitors & Transducers

Photodiode offers 5 mm² active area in quadrant configuration.

November 25, 2014

Resistant to radiation damage from UV lasers, SXUVPS4 multi-element detector can withstand 4 days of exposure to 10 eV 1016 photons/cm² without degradation in responsivity. Photodiodes, supplied in TO-5 package that facilitates integration into new or existing systems, provide 0.125–0.02 A/W over 10–200 nm wavelength range. Circular detection surface is optimized for precise alignment of lasers with 4 elements, each offering 1.25 mm² active area. Read More

Electronic Components & Devices, Optics & Photonics, Sensors, Monitors & Transducers

EVERLIGHT Electronics Highlights Three New High Performance Optocouplers among Its Increasing Infrared Portfolio at Electronica 2014

November 17, 2014

Transistor optocouplers offer high performance with a wide temperature range up to 110°C Shulin, New Taipei City – EVERLIGHT ELECTRONICS CO., LTD.[TSE:2393, a leading player in the global LED and optoelectronics industry, will showcase its broad and growing infrared portfolio at electronica 2014that includes infrared LEDs, photo transistors and photo diodes, infrared receiver modules,... Read More

Electronic Components & Devices, Optics & Photonics

High-Speed Photodiode features 5 mm circular active area.

October 3, 2014

Suitable for extreme UV detection covering 1–200 nm, Model SXUV20HS1 dissipates optical energy of high-powered UV lasers without typical measurement degradation that occurs with prolonged exposure to UV. Unit features 19.7 mm² sensitive area, 5 micron grid lines, and 100 micron pitch, as well as 5 MΩ shunt resistance and capacitance from 200–800 pF. With reverse breakdown voltage at 160 V and max rise time of 2 ns, photodiode is suited for photolithography applications. Read More

Electronic Components & Devices, Optics & Photonics

Vishay Intertechnology at Electronica 2014 Nov. 11-14

September 17, 2014

Vishay Intertechnology, Inc. (NYSE: VSH) will be exhibiting its latest industry-leading solutions for a wide variety of applications at electronica 2014, taking place Nov. 11-14 at the Munich Trade Fair Centre in Munich, Germany. In its main booth A5.142-143 and Automotive Innovation booth A6.A13-15, Vishay will be demonstrating a range of technologies in several product categories, including... Read More

Electronic Components & Devices, Optics & Photonics

Silicon PIN Photodiodes offer sensitive area of 0.85 mm².

September 12, 2014

Available in clear- and black-epoxy 1206 surface-mount packages with 900 nm and 950 nm wavelengths of peak sensitivity, respectively, Models VEMD6010X01 and VEMD6110X01 provide reverse light current of 9.5 µA and low dark current of 1 nA. AEC-Q101-qualified devices are optimized for photo detection in light curtains, light barriers, metering systems, and rain/sun sensors. Measuring 4 x 2 x 1.05 mm, RoHS-compliant units feature ±60° angles of half intensity and temperature range of -40 to +110°C. Read More

Electronic Components & Devices, Optics & Photonics

Windowless Photodiode features circular active area.

August 21, 2014

Housed in TO-39, 3-pin windowless package that delivers responsivity down to 1 nm, Model SXUV features active area of ∅2.5 mm and minimum shunt resistance of 20 MΩ at ±10 mV. Additional device parameters include reverse breakdown voltage of 20 V, with capacitance of 1 nF and response time of 1–2 ns. Operating from -10 to 40°C ambient, photodiode is suited for high power laser monitoring at wavelengths from 1–200 nm, or other tasks that require stable photodiode after EUV exposure. Read More