Opto Diode Corp.    Newbury Park, CA 91320
May 21, 2013 Supplied in 40-pin dual in-line package, AXUV16ELG has 2 x 5 mm active area, sensitive area of 10 mm² per element, and internal quantum efficiency (QE) rated at 100%. This 16-element photodiode, offering stable response after exposure to high energy electrons or photons, features reverse breakdown voltage at 25 V typ, capacitance of 40 pF, and rise time of 500 nsec. Storage and operating range is -10 to +40°C for ambient environments (-20 to +80°C for nitrogen or vacuum conditions).

Everlight Electronics Co. Ltd.    TAIPEI   Taiwan
May 15, 2013 Intended for optical switches, digital cameras, and printers, ITR1205ST11A/TR slotted type opto interrupter detects object when it enters gap of slotted switch and blocks light path between emitter and detector. Pb-/Halogens-free solution can be designed to have respective gap and slit widths of 1.1 and 0.3 mm, promoting accuracy and detection sensitivity. Featuring 2.7 mm profile, product consists of IR emitting diode and NPN silicon phototransistor integrated by double molding process.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
May 15, 2013 IR emitters VSMG10850 (850 nm) and VSMB10940 (940 nm) and package-matched, high-speed silicon PIN photodiode VEMD10940F, with radiant sensitivity from 780–1,050 nm, offer ±75° angle of half intensity in 3 x 2 x 1 mm side-view SMT package. Offered in clear, untinted plastic packages, IR emitters provide radiant intensity of 1 mW/sr typ @ 20 mA and switching times of 15 nsec. Featuring daylight blocking filter, VEMD10940F offers reverse light current of 3 µA and dark current of 1 nA.

Toshiba America, Inc.    Irvine, CA 92618
Feb 19, 2013 Housed in SO6 package, Model TLP152 consists of GaAlAs infrared LED optically coupled to high-gain photodetector IC chip. Unit achieves low output current of 2.5 A and contributes to low-power consumption with operating power supply voltage of 10–30 V. With guaranteed minimum creepage and clearance distances of 5 mm and internal insulation thickness of 0.4 mm, Model TLP152 is suited for photovoltaic power micro inverters, digital home appliances, industrial devices, and control devices.

JinkoSolar Holding Co., Ltd.    Shanghai 200122  China
Jan 22, 2013 Certified under weather conditions of 85°C and 85% RH, Eagle series is comprised of potential induced degradation (PID)-free solar modules are capable of reaching 260 W peak power output. Proprietary cell and assembly technology enables series to resist PID under adverse weather conditions.

Memc    St. Peters, MO 63376
Jan 21, 2013 Manufactured exclusively with MEMC-produced polysilicon and CCz p-type mono wafers with tight resistance control, 330 Watt Silvantis™ M330 is Potential Induced Degradation-free for optimal reliability. Unit features high load capacity of 5,400 Pa, textured ARC glass for maximum energy production, and positive power tolerance of -0 to +5 W. Module is 1,000 V UL Certified by CSA and includes IEC certification by TUV SUD.

Newport Corp.    Irvine, CA 92606
Dec 19, 2012 Packaged in metal housing with integrated calibration-data storage and automatic OD3 attenuator On/Off position sensor, Series 918D-ST is available with 10 x 10 mm silicon, UV-enhanced silicon, or germanium photodetector. Models 918D-ST-IR,  918D-ST-SL, and 918D-ST-UV operate from 780–1,800 nm, 400–1,100 nm, and 200–1,100 nm, respectively. Supplied with NIST-traced calibration report, sensors are suitable for laser and other optical power measurements where space is limited.

JENOPTIK Optical Systems GmbH    07745 Jena   Germany
Oct 19, 2012 Able to detect predefined wavelength range without additional filter, photodiodes provide spectral receiving characteristics independent of angle of incidence of radiation. Wavelength-selective radiation detection diodes, made from materials such as GaP, AlGaN, AlGaAs, InGaAs, or SiC, are designed for spectral range of 150–1,750 nm and come in hermetically sealed housings. Thermally stable up to 125°C, products suit photometric applications requiring extended measurement (dynamic) range.

Osi Systems    Hawthorne, CA 90250
Oct 11, 2012 Comprised of silicon avalanche photodiodes optimized for operation in 800 nm wavelength region, APD Series 8-150 operates from -40 to +100°C max, supports bandwidths up to 1 GHz, and features 0.2, 0.5, 1.0, and 1.5 mm dia active areas. Hermetically sealed metal package is standard, and low temperature coefficients reach down to 0.45/V°C. Products are suited for optical fiber communication, laser range finder, and high-speed photometry applications.

Suntech Power Holdings Co., Ltd.    Jiangsu Province 214028  China
Aug 27, 2012 With 72 multicrystalline cells and 15.5% module efficiency, Ve-Series serves commercial- and utility-scale solar projects in North and South America. Frame thickness is 40 mm, and module withstands wind and snow loads up to 3,800 and 5,400 Pascal, respectively. With UL1000V certification, modules can be safely connected in extended series, facilitating large-scale solar project designs while reducing balance of system (BOS) expenditures regarding inverters, wiring, and combiner boxes.

Seiko Instruments U.S.A., Inc.    Torrance, CA 90505
Jul 27, 2012 Supplied in 2.9 x 2.8 x 1.3 mm SOT-23-5 package, S-5470 series enables design of light/dark detection switch circuits with zero power consumption (nW class). ICs detect electrical current generated by photodiodes and LEDs when exposed to light without need for amplifiers using low-power CMOS technology. This achieves zero-power consumption (nW class) circuit designs and enables design of shading detection switches based on illumination differences between 2 PV devices.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 25, 2012 Suited for use in medical diagnostic applications, ODD-900-002 operates in spectral bandwidth from 400-1,100 nm with peak sensitivity of 940 nm. Typical responsivity is at 0.44 A/W, with typical reverse dark current at 5 nA and total capacitance at 25 pF typ. Operating from -25 to +85°C, photodiode can be stored at temperatures from -40 to +85°C and has soldering temperature of 260°C (5 sec max). Power dissipation is 150 mW at or below 25°C (free air temperature).

Opto Diode Corp.    Newbury Park, CA 91320
Jul 20, 2012 Featuring sensitivity from 730-1,100 nm with peak sensitivity at 940 nm, Model ODD-900-001 is suited for industrial photoelectric control applications. Electro-optical characteristics at 25°C include typical responsivity of 0.44 A/W, typical reverse dark current at 5 nA, total capacitance at 25 pF, and typical rise/fall times of 50/50 nSecs. Power dissipation is 150 mW or below at 25°C free air temperature.

Suntech Power Holdings Co., Ltd.    Jiangsu Province 214028  China
Jun 07, 2012 Measuring 1,640 x 992 x 35 mm and weighing 18.2 kg, W-Series 260 W Modules each feature sixty 6 in. monocrystalline cells that together achieve up to 16% module-level conversion efficiency. Units withstand all weather conditions, including 3.800 Pascal wind loads and 5.400 Pascal snow loads, well above IEC standard requirements. By minimizing surface dust, anti-reflective hydrophobic layer optimizes light absorption and weak-light performance.

Konica Minolta Sensing Americas, Inc.    Ramsey, NJ 07446
Apr 26, 2012 Designed using optical filter mounted on stable crystalline silicon solar cell, AK-120/130/140 Triple Junction PV Cells include connectors for I-V measurement as well as temperature measurement. Built-in temperature sensor can be connected to temperature controlled stage to achieve and maintain standard test condition of 25°C. Providing durability against exposure to light, cells minimize solarization and ensure stability, even when used over long period of time.

Konica Minolta Sensing Americas, Inc.    Ramsey, NJ 07446
Apr 02, 2012 With optical filter mounted on stable crystalline silicon solar cell, Model AK-300 is used as standardized point of calibration to ensure consistent measurements of newly developed photovoltaic cells. Dye sensitized cell features spectral mismatch error of less than 1% and includes connectors for I-V measurement as well as temperature measurement. Errors in short-circuit current due to multiple reflections is reduced from 1.3% of conventional products to 0.0%.

Newport Corp.    Irvine, CA 92606
Mar 15, 2012 Incorporating 10 x 10 mm silicone photodiode, Models 818-ST2 and 818-ST2-UV have slender wand design for detection and measurement in tight spaces. Power levels range from pW to 2 W with built-in calibrated OD3 attenuator. Detachable from BNC connector, calibration module permits interface with power meters. Protective aluminum cases safeguard optics, especially in UV wavelength range, and keep housing and attenuator glue protected from potential high heat damage.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 24, 2012 For IR and visible light sources, TEFD4300 is clear epoxy device with sensitivity range of 350-1,120 nm. For light sources in IR wavelength from 770-1,070 nm, TEFD4300F is black epoxy device with daylight blocking filter matched with 850-950 nm IR emitters. Both silicon PIN photodiodes offer 17 µA reverse photo current and ±20° angle of half sensitivity. Other features include switching times down to 10 ns, 0.1%/K temperature coefficient of light current, and -40 to +100°C operating range.

Olympus Europa Holding GmbH    Hamburg 20097  Germany
Feb 03, 2012 Suited for capturing faint fluorescence signals and minimizing laser power required to generate detectable signal, FV10MP-BXD-GAP features GaAsP coating on photoelectric surface of non-descanned detector unit that optimizes sensitivity. Noise is minimized via Peltier cooling, and design reduces effects of photobleaching and phototoxicity. System has two conventional multi-alkali PMTs for routine browsing of samples and two GaAsP PMTs for highly sensitive analysis of specific ROIs.

Opto Diode Corp.    Newbury Park, CA 91320
Nov 04, 2011 Featuring 100 mm² active area, IRD SXUV 100 Series has nitrided metal silicide front window that permits operation without loss of performance in high humidity and other environmental conditions that normally require sealed packages. Diodes with single active areas are available from 1-576 mm², and quadrant diodes with several central openings may also be specified. When tested, devices revealed no observable responsivity loss after exposure to billions of 157 and 193 nm pulses.