Konica Minolta Sensing Americas, Inc.    Ramsey, NJ 07446
Apr 26, 2012 Designed using optical filter mounted on stable crystalline silicon solar cell, AK-120/130/140 Triple Junction PV Cells include connectors for I-V measurement as well as temperature measurement. Built-in temperature sensor can be connected to temperature controlled stage to achieve and maintain standard test condition of 25°C. Providing durability against exposure to light, cells minimize solarization and ensure stability, even when used over long period of time.

Konica Minolta Sensing Americas, Inc.    Ramsey, NJ 07446
Apr 02, 2012 With optical filter mounted on stable crystalline silicon solar cell, Model AK-300 is used as standardized point of calibration to ensure consistent measurements of newly developed photovoltaic cells. Dye sensitized cell features spectral mismatch error of less than 1% and includes connectors for I-V measurement as well as temperature measurement. Errors in short-circuit current due to multiple reflections is reduced from 1.3% of conventional products to 0.0%.

Newport Corp.    Irvine, CA 92606
Mar 15, 2012 Incorporating 10 x 10 mm silicone photodiode, Models 818-ST2 and 818-ST2-UV have slender wand design for detection and measurement in tight spaces. Power levels range from pW to 2 W with built-in calibrated OD3 attenuator. Detachable from BNC connector, calibration module permits interface with power meters. Protective aluminum cases safeguard optics, especially in UV wavelength range, and keep housing and attenuator glue protected from potential high heat damage.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 24, 2012 For IR and visible light sources, TEFD4300 is clear epoxy device with sensitivity range of 350-1,120 nm. For light sources in IR wavelength from 770-1,070 nm, TEFD4300F is black epoxy device with daylight blocking filter matched with 850-950 nm IR emitters. Both silicon PIN photodiodes offer 17 µA reverse photo current and ±20° angle of half sensitivity. Other features include switching times down to 10 ns, 0.1%/K temperature coefficient of light current, and -40 to +100°C operating range.

Olympus Europa Holding GmbH    Hamburg 20097  Germany
Feb 03, 2012 Suited for capturing faint fluorescence signals and minimizing laser power required to generate detectable signal, FV10MP-BXD-GAP features GaAsP coating on photoelectric surface of non-descanned detector unit that optimizes sensitivity. Noise is minimized via Peltier cooling, and design reduces effects of photobleaching and phototoxicity. System has two conventional multi-alkali PMTs for routine browsing of samples and two GaAsP PMTs for highly sensitive analysis of specific ROIs.

Opto Diode Corp.    Newbury Park, CA 91320
Nov 04, 2011 Featuring 100 mm² active area, IRD SXUV 100 Series has nitrided metal silicide front window that permits operation without loss of performance in high humidity and other environmental conditions that normally require sealed packages. Diodes with single active areas are available from 1-576 mm², and quadrant diodes with several central openings may also be specified. When tested, devices revealed no observable responsivity loss after exposure to billions of 157 and 193 nm pulses.

Canadian Solar Inc.    Kitchener   Canada
Sep 09, 2011 Available in monocrystalline and polycrystalline versions, ELPS (efficient, long-term photovoltaic solution) technology solar modules deliver cell conversion efficiencies up to 19.5% and power output of up to 265 W. ELPS technology is based on metal-wrap-through architecture, which optimizes front surface exposure to sunlight for increased efficiency. At module level, ELPS allows interconnection on one side. This reduces resistance and increases fill factor for higher power output.

Newport Corporation    Irvine, CA 92606
May 06, 2011 Series 818 photodetectors are available with attenuator design, based on optic and clear aperture of 918D series detectors, that features 10 mm clear aperture to help user accurately align detector to input optical beam. Window also helps avoid detector overfilling, while clearly visible cross hair on housing assists coarse alignment of beam. With calibrated levels from pW to 2 W, detectors operate from 200-1,800 nm and feature matching patented, removable OD3 attenuators.

Andor Technology Ltd.    South Windsor, CT 06074
Apr 06, 2011 Intended for nanosecond time-resolved imaging, iStar scientific-grade ICCDs combine CCD sensor and gated image intensifier technologies for accelerated acquisitions and sensitivity down to one photon. Features include thermo-electric cooling to -40°C, 500 kHz photocathode gating rates, and intensifier EBI noise reduction. Timing accuracy, down to few tens of picoseconds, allows precise synchronisation of complex experiments through range of I/O triggering options.

Opto Diode Corp.    Newbury Park, CA 91320
Feb 16, 2011 Featuring 10 x 10 mm active area, IRD AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, allowing absolute measurement of X-ray flux with energies of 100 keV and beyond. Unit requires no external voltage for operation, operates at room temperature, and provides up to 1 Gigarad of radiation hardness. Photodiodes with directly-deposited, thin-metallic filters are available for reducing response to visible light.

Ophir-Spiricon Inc.    Logan, UT 84321
Nov 16, 2010 Designed to measure temporal pulse shape of lasers or other light sources, FPS-1 Fast Photodetector consists of photodiode sensor that handles wavelengths from 190-1,100 nm. Unit's 50 W load measures ns high peak power pulses, while 10 KW load measures longer and lower peak power pulses. Input can be direct beam or from fiber connection. Operating off battery or wall cube power supply, detector is available with optional ND filters.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Jul 30, 2010 Model VEMD25x0X01 high-speed silicon PIN photodiodes offer 12 µA light current and spectral sensitivity range of 350-1,120 nm, while VEMT25x0X01 NPN planar phototransistors offer light current of 6 mA and spectral sensitivity from 470-1,090 nm. Sensitive to visible and NIR radiation, both photo detectors feature 1 nA dark current, ±15° angle of half sensitivity, and temperature range of -40 to +100°C. They are available in 1.8 mm gullwing and reverse gullwing SMT packages.

CIP Technologies    Ipswich   United Kingdom
Dec 03, 2009 With insertion loss of only 3.6 dB, combined modulation and photodetection transducer 60G-R-EAM-1550 provides digital optical modulation at 50 GBps, RF modulation over 60 GHz bandwidth, and photodetection with 1.0 A/W responsivity and 43 GHz bandwidth. It operates across 1,550 Nm C-band with low chirp parameter and is designed for use with laser diode source. It is available in custom variants, standard package with RF connectors is suited for use with external RF components/drivers.

SmartQuantum Inc    Sunnyvale, CA 94085
Nov 03, 2009 Ultra low noise near infrared single photon detector SQLightSensor has detection efficiency up to 25%, trigger up to 10 MHz, and dark count of 5.10-6 per ns gate. Device provides plug-and-play USB connection to PC, enabling users to easily adjust detection efficiency and tune gate width and delay. Product suits scientific, defense and industrial applications, such as single photon counting, spectroscopy, eye-safe laser range finder and LIDAR, and quantum cryptography.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Oct 27, 2009 Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 µA and spectral sensitivity range of 470-1,090 nm or 750-1,010 nm with visible light filtering epoxy.

Discovery Semiconductors Inc.    Ewing, NJ 08628
Oct 16, 2009 Operating in 1,310 Nm wavelength band, Quad Photoreceiver Arrays are designed for 10 and 40 km transmission over single-mode fiber conforming to 100 Gigabit Ethernet standard (100GBASE-LR4 and 100GBASE-ER4). Arrays consist of 4 monolithically integrated InGaAs photodiodes on InP substrate and 4 transimpedance amplifiers (TIAs) to produce 4-channel electrical output signal, each channel running up to 28 Gbps. Power consumption is typically 200 mW per channel.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 17, 2009 Operating from 550-720 nm, selective wavelength photodiode, ODD-660W suits fluorescence detection, color sensors, daylight sensors, light barriers, and medical diagnostics application. Hermetically-sealed unit features spectral bandwidth of 80 nm, storage and operating temperature between -30 to 85°C, and lead soldering temperature of up to 260°C. It provides low dark current without optical filters.

Opto Diode Corp.    Newbury Park, CA 91320
Jun 09, 2009 Designed for automotive and colorimetry industries, ODD-525W has active area of 0.62 mm², and peak sensitivity response of 525 nm. Features included are spectral bandwidth of 70 nm, and storage and operating temperatures range between -30°C to 85°C and lead soldering temperature at 260°C. Available in hermetically sealed standard TO-46 can, unit can be used in auto light-dimming, fluorescence detection, color sensors, and daylight detection tasks.

Opto Diode Corp.    Newbury Park, CA 91320
May 08, 2009 ODD-470W features spectral bandwidth of 100 nm and operates between 380-540 nm with peak sensitivity response at 470 nm. With low dark current and no optical filters used, photodetector is suited for use in color sensors, fluorescence detection, and medical diagnostic applications. Hermetically sealed, standard TO-46 can facilitates installation into existing or new systems. Storage and operating temperatures range from -30° to 85°C and lead soldering temperature is at 260°C.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 16, 2009 Supplied in 0805-sized, SMT package with 0.85 mm profile and 2-pin connection, AEC-Q101-Qualified TEMD6200FX01 reacts to light for automatic control of LCD brightness and keypad backlighting in automotive applications. Integrated IR filtering epoxy technology matches spectral sensitivity of human eye, with minimal sensitivity to light beyond visible range. Characteristics include angle of half sensitivity of ±60°, radiant sensitive area of 0.3 mm², and peak sensitivity of 540 nm.