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Optics & Photonics -> Optical Measuring Devices, Sensors & Tools -> Photodetectors


Photodetectors







(Showing headlines 1 - 20)   more ....
Avalanche Photodiode operates at 3.5 GHz.

Avalanche Photodiode operates at 3.5 GHz.

Laser Diode, Inc.    Edison, NJ 08820
May 16, 2014 Featuring 30 µm InGaAs mesa structure, LAPD 1550-30R offers broad voltage breakdown curve of 30–40 V with typical response of 37 V. Low-noise unit operates from -40 to 85° C and from 1,260–1,650 nm with typical operational wavelength at 1,550 nm. Housed in hermetically sealed, 3-pin, TO46 package with lens cap, RoHS-compliant photodiode is suited for applications in range-finding, optical time-domain reflectometers, and high-sensitivity line receivers.

IR Emitter/Photodiode Pairs suit IR touch panels.

IR Emitter/Photodiode Pairs suit IR touch panels.

Vishay    Malvern, PA 19355
Mar 10, 2014 Supplied in 3 x 2 mm side-view surface-mount packages, AEC-Q101-qualified VSMB10940X01/VEMD10940FX01 have 1 mm profile, while VSMB11940X01/VEMD11940FX01 offer 0.6 mm profile. VSMB emitters, featuring GaAIAs multi quantum well technology, provide radiant intensity of 1 mW/sr at 20 mA, forward voltage of 1.3 at 20 mA, and switching time of 15 ns. VEMD silicon PIN photodiodes offer reverse light current of 1.1 µA and 3 µA, respectively, with radiant sensitivity from 780–1,050 nm.

Single Active Area Photodiode permits detection to 1 nm.

Single Active Area Photodiode permits detection to 1 nm.

Opto Diode Corp.    Newbury Park, CA 91320
Jan 10, 2014 Offering stable response after exposure to EUV/UV conditions, SXUV100 features 100 mm² active area. Sensitive device is operational from 1–1,000 nm, with peak photon responsivity at 0.27 A/W (at 1 nm) and 0.33 A/W (at 850 nm). Other characteristics include 10 MΩ shunt resistance @ ±10 mV, 6 nF typ capacitance, and 250 nsec typ response time. Optimal applications include detection of 13.5 nm wavelengths or any high-power density source monitoring from 1–150 nm.

Quadrant Photodiode offers 5 mm² active area in each quadrant.

Quadrant Photodiode offers 5 mm² active area in each quadrant.

Opto Diode Corp.    Newbury Park, CA 91320
Nov 22, 2013 Housed in TO-5 windowless package with 5-pin header, Model SXUVPS4C features light responsivity from 1–1,000 nm and shunt resistance of 100 MΩ, making it suitable for 2 axes-positional-centering applications for lasers in 13.5–200 nm wavelength range. Operating and storage temperatures range from -10 to 40°C ambient and from -20 to 80°C in nitrogen or vacuum conditions. Max junction temperature is 70°C and lead-soldering temperature is 260°C at 0.080 in. from case for 10 sec.

Radiation-Hard Photodiode is suited for electron detection.

Radiation-Hard Photodiode is suited for electron detection.

Opto Diode Corp.    Newbury Park, CA 91320
Oct 10, 2013 With circular active area, 20 mm² UVG20C offers 100% internal quantum efficiency. Absence of surface dead region results in 100% collection efficiency. Radiation-hard, junction-passivating, oxynitride protective entrance window makes device stable even after exposure to flux of UV photons; responsivity degradation is <2% after MJ/cm² of 254 nm and tens of kilojoules/cm² of 193 nm photon exposure. Typ values include 1.7 µsec rise time, 200 MΩ shunt resistance, and 4 nF capacitance.

Absolute Photodiode features 100 mm² active area.

Opto Diode Corp.    Newbury Park, CA 91320
Sep 19, 2013 Delivering 100% internal quantum efficiency, Model UVG100 is suited for applications that require extreme stability for detection of vacuum UV and extreme UV photons. Oxynitride front window ensures successful operation without performance degradation that occurs with high humidity. Under test conditions at 254 nm, responsivity is 0.08 min, 0.09 typ, and 0.13 max A/W. Additional specifications include max rise time of 10 µs at 10 V and  minimum shunt resistance of 20 MΩ at ±10 V.

High-Speed Photo Detectors offer ±35° angle of half sensitivity.

High-Speed Photo Detectors offer ±35° angle of half sensitivity.

Vishay    Malvern, PA 19355
Aug 13, 2013 Offered with or without daylight blocking filters, AEC-Q101-qualified photo detectors are RoHS-compliant and halogen-free and come in miniature gullwing, reverse gullwing, and side-view packages with wide-view dome lenses. While VEMD2xx3(SL) PIN photodiodes have typ output current of 10 µA and dark current of 1 nA, VEMT2xx3(SL) phototransistors have typ output of 2.7 mA. Typical photo currents are 10 µA for photodiodes and 2.7 mA for phototransistors at 1 mW/cm² and 950 nm.

Multi-Element Photodiode suits electron detection, bolometry.

Opto Diode Corp.    Newbury Park, CA 91320
Jul 18, 2013 Supplied in 22-pin, dual in-line package with 100% internal quantum efficiency, 20-element AXUV20ELG is suited for measurement of minute amounts of radiant energy. It can also be used for electron detection, providing EUV-UV and UV-VIS-NIR photon responsivity measured in amperes per watt. Along with 0.75 x 4.1 mm active area and 3 mm² sensitive area per element, features include 25 V typ reverse breakdown voltage, 40 pF max capacitance, 200 nsec rise time, and 100 MΩ min shunt resistance.

SMD Transmissive Optical Sensors operate from -40 to +125°C.

SMD Transmissive Optical Sensors operate from -40 to +125°C.

Vishay    Malvern, PA 19355
Jun 26, 2013 Measuring 5.5 x 4 x 4 mm, single-channel TCPT1350X01 includes infrared emitter and phototransistor detector located face-to-face in surface-mount package while dual-channel TCUT1350X01 includes infrared emitter and 2 phototransistor detectors. Both AEC-Q101-qualified devices have phototransistor output and 0.3 mm aperture. Offering typical output current of 1.6 mA, sensors operate at wavelength of 950 nm and can be used as position sensors for encoders in high-temperature environments.

Four-Junction Solar Cell achieves peak efficiency of 43.6%.

Soitec, Inc.    Peabody, MA 01960
May 30, 2013 Designed to maximize conversion efficiency of commercial concentrator photovoltaic systems, Four-Junction Solar Cell uses two dual-junction sub cells grown on different III-V compound materials, which allows optimal band-gap combinations tailored to capture broad range of solar spectrum. Using substrate-bonding and layer-transfer technologies to stack non-lattice-matched materials, cell demonstrates more than 43% energy-generating efficiency over concentration range of 250–500.

Sixteen-Element Photodiode suits UV/EUV or electron detection.

Sixteen-Element Photodiode suits UV/EUV or electron detection.

Opto Diode Corp.    Newbury Park, CA 91320
May 21, 2013 Supplied in 40-pin dual in-line package, AXUV16ELG has 2 x 5 mm active area, sensitive area of 10 mm² per element, and internal quantum efficiency (QE) rated at 100%. This 16-element photodiode, offering stable response after exposure to high energy electrons or photons, features reverse breakdown voltage at 25 V typ, capacitance of 40 pF, and rise time of 500 nsec. Storage and operating range is -10 to +40°C for ambient environments (-20 to +80°C for nitrogen or vacuum conditions).

Photointerrupter offers compact profile, ambient light immunity.

Photointerrupter offers compact profile, ambient light immunity.

Everlight Electronics Co. Ltd.    TAIPEI   Taiwan
May 15, 2013 Intended for optical switches, digital cameras, and printers, ITR1205ST11A/TR slotted type opto interrupter detects object when it enters gap of slotted switch and blocks light path between emitter and detector. Pb-/Halogens-free solution can be designed to have respective gap and slit widths of 1.1 and 0.3 mm, promoting accuracy and detection sensitivity. Featuring 2.7 mm profile, product consists of IR emitting diode and NPN silicon phototransistor integrated by double molding process.

IR Emitters and Photodiode are suited for IR touch panels.

IR Emitters and Photodiode are suited for IR touch panels.

Vishay    Malvern, PA 19355
May 15, 2013 IR emitters VSMG10850 (850 nm) and VSMB10940 (940 nm) and package-matched, high-speed silicon PIN photodiode VEMD10940F, with radiant sensitivity from 780–1,050 nm, offer ±75° angle of half intensity in 3 x 2 x 1 mm side-view SMT package. Offered in clear, untinted plastic packages, IR emitters provide radiant intensity of 1 mW/sr typ @ 20 mA and switching times of 15 nsec. Featuring daylight blocking filter, VEMD10940F offers reverse light current of 3 µA and dark current of 1 nA.

IC Coupler drives middle-capacity IGBT or power MOSFET.

Toshiba America, Inc.    Irvine, CA 92618
Feb 19, 2013 Housed in SO6 package, Model TLP152 consists of GaAlAs infrared LED optically coupled to high-gain photodetector IC chip. Unit achieves low output current of 2.5 A and contributes to low-power consumption with operating power supply voltage of 10–30 V. With guaranteed minimum creepage and clearance distances of 5 mm and internal insulation thickness of 0.4 mm, Model TLP152 is suited for photovoltaic power micro inverters, digital home appliances, industrial devices, and control devices.

PID Free Solar Module work in challenging conditions.

JinkoSolar Holding Co., Ltd.    Shanghai 200122  China
Jan 22, 2013 Certified under weather conditions of 85°C and 85% RH, Eagle series is comprised of potential induced degradation (PID)-free solar modules are capable of reaching 260 W peak power output. Proprietary cell and assembly technology enables series to resist PID under adverse weather conditions.

Solar Module optimizes efficiency to 16.9%.

Solar Module optimizes efficiency to 16.9%.

Memc    St. Peters, MO 63376
Jan 21, 2013 Manufactured exclusively with MEMC-produced polysilicon and CCz p-type mono wafers with tight resistance control, 330 Watt Silvantis™ M330 is Potential Induced Degradation-free for optimal reliability. Unit features high load capacity of 5,400 Pa, textured ARC glass for maximum energy production, and positive power tolerance of -0 to +5 W. Module is 1,000 V UL Certified by CSA and includes IEC certification by TUV SUD.

Wand Photodiode Sensors include built-in temperature sensing.

Wand Photodiode Sensors include built-in temperature sensing.

Newport Corp.    Irvine, CA 92606
Dec 19, 2012 Packaged in metal housing with integrated calibration-data storage and automatic OD3 attenuator On/Off position sensor, Series 918D-ST is available with 10 x 10 mm silicon, UV-enhanced silicon, or germanium photodetector. Models 918D-ST-IR,  918D-ST-SL, and 918D-ST-UV operate from 780–1,800 nm, 400–1,100 nm, and 200–1,100 nm, respectively. Supplied with NIST-traced calibration report, sensors are suitable for laser and other optical power measurements where space is limited.

Photodiodes feature angle-independent response spectrum.

JENOPTIK Optical Systems GmbH    07745 Jena   Germany
Oct 19, 2012 Able to detect predefined wavelength range without additional filter, photodiodes provide spectral receiving characteristics independent of angle of incidence of radiation. Wavelength-selective radiation detection diodes, made from materials such as GaP, AlGaN, AlGaAs, InGaAs, or SiC, are designed for spectral range of 150–1,750 nm and come in hermetically sealed housings. Thermally stable up to 125°C, products suit photometric applications requiring extended measurement (dynamic) range.

Silicon Avalanche Photodiodes operate in 800 nm region.

Silicon Avalanche Photodiodes operate in 800 nm region.

Osi Systems    Hawthorne, CA 90250
Oct 11, 2012 Comprised of silicon avalanche photodiodes optimized for operation in 800 nm wavelength region, APD Series 8-150 operates from -40 to +100°C max, supports bandwidths up to 1 GHz, and features 0.2, 0.5, 1.0, and 1.5 mm dia active areas. Hermetically sealed metal package is standard, and low temperature coefficients reach down to 0.45/V°C. Products are suited for optical fiber communication, laser range finder, and high-speed photometry applications.

Solar Module (300 W) suits large-scale projects.

Solar Module (300 W) suits large-scale projects.

Suntech Power Holdings Co., Ltd.    Jiangsu Province 214028  China
Aug 27, 2012 With 72 multicrystalline cells and 15.5% module efficiency, Ve-Series serves commercial- and utility-scale solar projects in North and South America. Frame thickness is 40 mm, and module withstands wind and snow loads up to 3,800 and 5,400 Pascal, respectively. With UL1000V certification, modules can be safely connected in extended series, facilitating large-scale solar project designs while reducing balance of system (BOS) expenditures regarding inverters, wiring, and combiner boxes.




(Showing headlines 1 - 20)   more ....



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