SmartQuantum Inc
Sunnyvale, CA 94085
Nov 03, 2009 Ultra low noise near infrared single photon detector SQLightSensor has detection efficiency up to 25%, trigger up to 10 MHz, and dark count of 5.10-6 per ns gate. Device provides plug-and-play USB connection to PC, enabling users to easily adjust detection efficiency and tune gate width and delay. Product suits scientific, defense and industrial applications, such as single photon counting, spectroscopy, eye-safe laser range finder and LIDAR, and quantum cryptography.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Oct 27, 2009 Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 µA and spectral sensitivity range of 470-1,090 nm or 750-1,010 nm with visible light filtering epoxy.

Discovery Semiconductors Inc.
Ewing, NJ 08628
Oct 16, 2009 Operating in 1,310 Nm wavelength band, Quad Photoreceiver Arrays are designed for 10 and 40 km transmission over single-mode fiber conforming to 100 Gigabit Ethernet standard (100GBASE-LR4 and 100GBASE-ER4). Arrays consist of 4 monolithically integrated InGaAs photodiodes on InP substrate and 4 transimpedance amplifiers (TIAs) to produce 4-channel electrical output signal, each channel running up to 28 Gbps. Power consumption is typically 200 mW per channel.

Opto Diode Corp.
Newbury Park, CA 91320
Jul 17, 2009 Operating from 550-720 nm, selective wavelength photodiode, ODD-660W suits fluorescence detection, color sensors, daylight sensors, light barriers, and medical diagnostics application. Hermetically-sealed unit features spectral bandwidth of 80 nm, storage and operating temperature between -30 to 85°C, and lead soldering temperature of up to 260°C. It provides low dark current without optical filters.

Opto Diode Corp.
Newbury Park, CA 91320
Jun 09, 2009 Designed for automotive and colorimetry industries, ODD-525W has active area of 0.62 mm², and peak sensitivity response of 525 nm. Features included are spectral bandwidth of 70 nm, and storage and operating temperatures range between -30°C to 85°C and lead soldering temperature at 260°C. Available in hermetically sealed standard TO-46 can, unit can be used in auto light-dimming, fluorescence detection, color sensors, and daylight detection tasks.

Opto Diode Corp.
Newbury Park, CA 91320
May 08, 2009 ODD-470W features spectral bandwidth of 100 nm and operates between 380-540 nm with peak sensitivity response at 470 nm. With low dark current and no optical filters used, photodetector is suited for use in color sensors, fluorescence detection, and medical diagnostic applications. Hermetically sealed, standard TO-46 can facilitates installation into existing or new systems. Storage and operating temperatures range from -30° to 85°C and lead soldering temperature is at 260°C.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Feb 16, 2009 Supplied in 0805-sized, SMT package with 0.85 mm profile and 2-pin connection, AEC-Q101-Qualified TEMD6200FX01 reacts to light for automatic control of LCD brightness and keypad backlighting in automotive applications. Integrated IR filtering epoxy technology matches spectral sensitivity of human eye, with minimal sensitivity to light beyond visible range. Characteristics include angle of half sensitivity of ±60°, radiant sensitive area of 0.3 mm², and peak sensitivity of 540 nm.

Discovery Semiconductors Inc.
Ewing, NJ 08628
Feb 10, 2009 Designed for 40 Gb/s and 100 Gb/s optical communications, Quad InGaAs Photodiode Arrays consist of 4 photodiodes monolithically integrated on common InP substrate. Diodes are available in 10, 30, 40, or 50 µm diameters and feature RF bandwidth of 10, 15, 20, or 40 GHz. With optical power handling exceeding +12dBm for each photodiode, arrays are suited for 100 Gb/s Long-Haul Pol-Mux (D)QPSK, 40 Gb/s Long-Haul (D)QPSK, and 40G/100G parallel networking.

International Radiation Detectors
Torrance, CA 90505
Jan 20, 2009 AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, enabling absolute measurement of X-ray flux with energies 100 keV and beyond. Requiring no external voltage, detector has 10 x 10 mm square active area with room-temperature operation. Nitrided-oxide front window provides up to one Gigarad (SiO2) of radiation hardness. Photodiodes with directly-deposited, thin-metallic filters are available.

KYOCERA Corporation
Kyoto 612-8501  Japan
Jan 06, 2009 SAMURAI and ECONOROOTS models optimize power output by adopting 156 x 156 mm solar cells. Standard type ECONOROOTS models, designed for sloped or flat roofs, deliver 183 W output per module via 6 x 8 solar cell configuration. SAMURAI models SD62X-QPS-B and SD46X-QPS-B, developed for installation on roofs characteristic of Japanese homes, are respectively produced with 2 x 6 or 2 x 8 cell arrays and deliver 48 or 62 W output.

Opto Diode Corp.
Newbury Park, CA 91320
Nov 17, 2008 Blue/green enhanced silicon photodiode preamplifier, ODA-6WB-500M, operates between 400-1,100 nm, with peak spectral frequency at 940 nm. Sensitivity response is 140 V/µW (min 100), typ, at 450 nm. Transimpedance gain is 500 Mohm, with custom gains available upon request. Hermetically sealed in 6 mm² TO-39 housing, device operates in -25 to 100°C temperatures and is suited for fluorescence detection and low-light-level medical diagnostic applications.

Amplification Technologies Inc.
Brooklyn, NY 11230
Jul 08, 2008 Able to detect single photons, DAPD10C Series solid-state photomultipliers offers wide spectral response from UV to NIR wavelengths. Discrete Amplification technology allows level of application-specific customization and performance optimization. Designed to potentially encompass detection of signals other than light, such as biological, chemical, and electrical signals, products have flat spectral curve between 300 and 600 nm and exhibit voltage and thermal stability.

National Semiconductor Corp.
Santa Clara, CA 95051-0695
Jul 08, 2008 Designed to promote overall energy output of solar electric power generating systems, SolarMagic(TM) technology extracts maximum power efficiency of each photovoltaic panel - even when some panels in array are compromised by shading, debris, or mismatch. Per-panel electronics solution, compatible with solar architectures regardless of underlying solar cell technology, optimizes power output of multi-panel installations.

Opto Diode Corp.
Newbury Park, CA 91320
Jul 01, 2008 Hermetically sealed in TO-39 can for integration into new or existing systems, 5 mm² Model ODA-5WB-100K offers wavelength response of 28 V/mW at 450 nm, responsivity range from 400-1,100 nm, and peak spectral response of 940 nm. Blue/green-enhanced device features storage and operating temperatures from -25 to +100°C, and is suited for industrial and biomedical applications, such as fluorescence and phosphorescence.

Optek Technology, Inc.
Carrollton, TX 75006-6905
May 13, 2008 Suited for space-constrained applications, SMT phototransistors include silicon phototransistor and photodarlington outputs that provide high photo sensitivity for automatic mounting and position sensing equipment. OP500/501 Series and OP520/521 Series feature 150° and 160° viewing angle as well as 1.5 mW/cm² and 5.0 mW/cm² apertured power, respectively. OP525 Series and OP580 Series have 1.5 mW/cm² and 5.0 mW/cm² apertured power as well as 25° and 100° viewing angle, respectively.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Apr 17, 2008 Including Models VEMT3700, VEMT3700F, and VEMT4700, VEMT Series phototransistors have 2 µsec rise and fall times and ±60° angle of half intensity. Compatible with lead-free reflow soldering processes according to JEDEC-STD-020D, devices feature optical/electrical/mechanical compatibility to serve as pin-to-pin and functional equivalents for TEMT series phototransistors. Units suit object/proximity sensing, optical switching, shaft encoding, data transmission, and touch key applications.

Opto Diode Corp.
Newbury Park, CA 91320
Feb 26, 2008 Suited for tight spaces, 6 mm² Model ODA-6W-100M includes shielded amplifier electronics and operates in NIR wavelength with response at 940 nm. Standard version features 500 MW gain with custom gains also available. Housed in hermetically sealed TO-39 package, infrared component's operating and storage temperature ranges from -25 to +100°C. Device is suited for applications in low pW region where discrete detector/preamplifier solutions are not sensitive enough.

Discovery Semiconductors Inc.
Ewing, NJ 08628
Feb 21, 2008 Offering linearity with third order intercept point as high as 50 dBm, 40 Gbps photodiode and receiver feature differential GPPO RF outputs that enable reception of all pre-amplified and unamplified 40G modulation formats. Receiver package interfaces to commercial CDR/DEMUX modules, and products address several modulation formats: ASK, DPSK, and DQPSK. Receiver configurations include single, balanced, and dual detection schemes, with and without transimpedance amplification.

Opto Diode Corp.
Newbury Park, CA 91320
Jan 25, 2008 Packaged in hermetically sealed TO-39 can, Near-Infrared (NIR) Red-Enhanced 5 mm² ODA-5W-100K Photodiode-Preamplifier combination device offers 500 MW gain. High-sensitivity, NIR wavelength response at 940 nm is 63 V/mW (typ) and 55 V/mW (min). With operating and storage temperature ranges of -25 to +100°C, product suits applications such as medical diagnostics, test and measurement, or other tasks that require low-light (under 1 mW) level detection.

International Radiation Detectors
Torrance, CA 90505
Nov 12, 2007 Featuring 10 x 10 mm² active area, SXUV 100 Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiode has nitrided metal silicide front window that permits operation without loss of performance in high-humidity and other environmental conditions that normally require sealed packages. Photon detector is designed for long-lifetime operation in high-particle flux environments without loss of responsivity. Diodes with single active areas are available from 1-576 mm².