Amplification Technologies Inc.
Brooklyn, NY 11230
Jul 08, 2008 Able to detect single photons, DAPD10C Series solid-state photomultipliers offers wide spectral response from UV to NIR wavelengths. Discrete Amplification technology allows level of application-specific customization and performance optimization. Designed to potentially encompass detection of signals other than light, such as biological, chemical, and electrical signals, products have flat spectral curve between 300 and 600 nm and exhibit voltage and thermal stability.

National Semiconductor Corp.
Santa Clara, CA 95051-0695
Jul 08, 2008 Designed to promote overall energy output of solar electric power generating systems, SolarMagic(TM) technology extracts maximum power efficiency of each photovoltaic panel - even when some panels in array are compromised by shading, debris, or mismatch. Per-panel electronics solution, compatible with solar architectures regardless of underlying solar cell technology, optimizes power output of multi-panel installations.

Opto Diode Corp.
Newbury Park, CA 91320
Jul 01, 2008 Hermetically sealed in TO-39 can for integration into new or existing systems, 5 mm² Model ODA-5WB-100K offers wavelength response of 28 V/mW at 450 nm, responsivity range from 400-1,100 nm, and peak spectral response of 940 nm. Blue/green-enhanced device features storage and operating temperatures from -25 to +100°C, and is suited for industrial and biomedical applications, such as fluorescence and phosphorescence.

Optek Technology, Inc.
Carrollton, TX 75006-6905
May 13, 2008 Suited for space-constrained applications, SMT phototransistors include silicon phototransistor and photodarlington outputs that provide high photo sensitivity for automatic mounting and position sensing equipment. OP500/501 Series and OP520/521 Series feature 150° and 160° viewing angle as well as 1.5 mW/cm² and 5.0 mW/cm² apertured power, respectively. OP525 Series and OP580 Series have 1.5 mW/cm² and 5.0 mW/cm² apertured power as well as 25° and 100° viewing angle, respectively.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Apr 17, 2008 Including Models VEMT3700, VEMT3700F, and VEMT4700, VEMT Series phototransistors have 2 µsec rise and fall times and ±60° angle of half intensity. Compatible with lead-free reflow soldering processes according to JEDEC-STD-020D, devices feature optical/electrical/mechanical compatibility to serve as pin-to-pin and functional equivalents for TEMT series phototransistors. Units suit object/proximity sensing, optical switching, shaft encoding, data transmission, and touch key applications.

Opto Diode Corp.
Newbury Park, CA 91320
Feb 26, 2008 Suited for tight spaces, 6 mm² Model ODA-6W-100M includes shielded amplifier electronics and operates in NIR wavelength with response at 940 nm. Standard version features 500 MW gain with custom gains also available. Housed in hermetically sealed TO-39 package, infrared component's operating and storage temperature ranges from -25 to +100°C. Device is suited for applications in low pW region where discrete detector/preamplifier solutions are not sensitive enough.

Discovery Semiconductors Inc.
Princeton Junction, NJ 08550
Feb 21, 2008 Offering linearity with third order intercept point as high as 50 dBm, 40 Gbps photodiode and receiver feature differential GPPO RF outputs that enable reception of all pre-amplified and unamplified 40G modulation formats. Receiver package interfaces to commercial CDR/DEMUX modules, and products address several modulation formats: ASK, DPSK, and DQPSK. Receiver configurations include single, balanced, and dual detection schemes, with and without transimpedance amplification.

Opto Diode Corp.
Newbury Park, CA 91320
Jan 25, 2008 Packaged in hermetically sealed TO-39 can, Near-Infrared (NIR) Red-Enhanced 5 mm² ODA-5W-100K Photodiode-Preamplifier combination device offers 500 MW gain. High-sensitivity, NIR wavelength response at 940 nm is 63 V/mW (typ) and 55 V/mW (min). With operating and storage temperature ranges of -25 to +100°C, product suits applications such as medical diagnostics, test and measurement, or other tasks that require low-light (under 1 mW) level detection.

International Radiation Detectors
Torrance, CA 90505
Nov 12, 2007 Featuring 10 x 10 mm² active area, SXUV 100 Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiode has nitrided metal silicide front window that permits operation without loss of performance in high-humidity and other environmental conditions that normally require sealed packages. Photon detector is designed for long-lifetime operation in high-particle flux environments without loss of responsivity. Diodes with single active areas are available from 1-576 mm².

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Aug 28, 2007 Qualified to AEC Q101 automotive standard, Models TEMD6010FX01 and TEMD5510FX01 utilize infrared filtering epoxy technology to match spectral sensitivity of human eye with minimal sensitivity to light beyond visible range. Photodiodes provide linear response to illuminance from 0.1 lux to 100 klux with lot-to-lot repeatability over extended operating temperature range of -40°C to +100°C. Units are RoHS compliant, free of halogens, and compatible with lead-free soldering.

Banner Engineering Corp.
Minneapolis, MN 55441
Aug 21, 2007 Available with 67.5 mm DIN-mounted housing and plug-in terminal blocks, DIN-Muting Module monitors 2 or 4 inputs to automatically suspend safeguarding during non-hazardous times in machine cycle. Industrial vehicles, pallets, and materials can move into or from machine process without tripping primary safeguard system. Offered with safety relay or safety solid-state outputs, solution is suited for use with safety light screens or other devices with hard contacts or PNP outputs.

Atmel Corp.
San Jose, CA 95131
May 09, 2007 Used in optical pick-up units of DVD and CD drives, ATR0874 comes in 4 x 3.5 mm QFN open-house package that can fit into slim drives found in laptops. IC includes 10 channels with 4 different gain steps, and open cavity permits laser direct access to die surface and photo diodes. Able to be soldered at temperatures to 260°C, solution is designed for high-speed DVD applications such as DVD-RAM and DVD+/-RW at wavelength of 650 nm and CD-RW at wavelength of 780 nm.

Opto Diode Corp.
Newbury Park, CA 91320
Apr 03, 2007 With chip dimensions of .100 x .048 in. (per element), red enhanced ODD-3W-2 Bi-Cell Photodiode offers spectral response of 0.55 A/W at 900 nm and shunt resistance at 250 MW min. This low-noise product comes in TO-5 cans to facilitate integration and operates over -40 to +125°C range. Uses include position sensing applications, emitter alignment, test and measurement, and other industrial tasks where single axis nulling is required.

Opto Diode Corp.
Newbury Park, CA 91320
Nov 07, 2006 Packaged in TO-5 can, ODA-5W-100M is suited for low-light-level tasks where electrical noise levels can affect photodiode signal if detector and amplifier are separate components on PCB. Photodetector amplifier combination offers 100 Mohm gain and 0.100 in. dia active area. Detector visible wavelength responsivity is 40 V/µW at 660 nm while frequency response is 1 KHz with dark offset at ±1 mV and dark offset noise at 5 mV rms.

Hamamatsu
Bridgewater, NJ 08807 0910
Jul 19, 2006 Featuring 10 x 10 mm active area, S8664-1010 silicon APD (avalanche photodiode) is suited for design into analytical instruments for low-light-level measurement. Detector's spectral response range is 320-1000 nm, with peak wavelength at 600 nm. At 600 nm, quantum efficiency is approximately 85% and gain is 50. Featuring high sensitivity in visible spectrum, high gain, low noise, and low capacitance, unit comes in ceramic housing with epoxy resin window.

Avo Photonics
Horsham, PA 19044
Apr 17, 2006 Custom Photodetector Services are suited for variety of applications, including fiber-coupled receivers, photometers, and photon-counting detectors for LIDAR. Engineering service includes comprehensive system-level analysis that identifies potential product issues such as optical and electrical isolation, low temperature operation, system noise, bandwidth, microphonics, and coupling efficiency. Technical expertise covers full spectrum of engineering disciplines.

Optek Technology, Inc.
Carrollton, TX 75006-6905
Mar 31, 2006 Housed in miniature, surface mount package measuring 0.10 x 0.08 in., Series OP570 NPN Phototransistors provide collector-emitter breakdown voltages of 30 V, collector current of 20 mA, and power dissipation of 130 mW. On-state collector current is 2.5 mA min and collector-emitter dark current is 100 nA max. Operating from -25 to +85°C, RoHS-compliant units are suited for non-contact position sensing, infrared data acquisition, machine automation, and optical encoders.

Goodrich Corp.
Charlotte, NC 28217
Feb 01, 2006 Designed for Geiger or Linear Mode single-photon counting at wavelengths from 0.9-1.6 microns, SU055-GM-APD-FO consists of one indium gallium arsenide/indium phosphide, near-infrared (NIR), avalanche photodiode (APD). It incorporates APD chip, thermoelectric cooler, thermistor, and optical fiber coupling optics into hermetic package. Along with quantum efficiency of over 70%, unit offers low-noise analog optical detection up to approximately 1 GHz.

GE Energy
Atlanta, GA 30339
Jan 03, 2006 Designed for commercial solar applications, 200 W solar module uses polycrystalline cells and is UL 1703-certified as well as California Energy Commission (CEC)-listed. Design facilitates installation process by reducing amount of racking and labor associated with solar array installation.

Optek Technology, Inc.
Carrollton, TX 75006-6905
Nov 30, 2005 Miniature, SMT Series OP520/OP521 exhibits response times of 15 µs with peak response to 880 nm wavelength light. Model OP520 features opaque lens to shield it from ambient light, while Model OP521 has water clear lens. Silicon NPN phototransistors are RoHS-compliant and characterized at collector-emitter voltage of 30 V, emitter-collector voltage of 5 V, and collector current of 20 mA. Power dissipation is 75 mW at 25°C and operating temperature is -25 to +85°C.