Newport Corp.    Irvine, CA 92606
Jan 10, 2013 Designed for 24/7 operation in manufacturing environments, Pulseo® 532-44 may be used to perform high-speed, precision cutting and drilling of semiconductors, glass, electronic packages, PCBs, ceramic substrates, and other microelectronics. Laser features greater than 44 W average 532 nm output power, with 30 ns pulse widths for minimizing undesirable heat damage to processed material. Less than 3% pulse-to-pulse stability promotes optimal process reproducibility and yields.

Coherent Inc., Laser Group    Santa Clara, CA 95054-1112
Aug 07, 2009 Powered by AAA(TM) diodes, Verdi(TM) G5 is based on optically pumped semiconductor laser technology. Unit features low noise of less than 0.03% rms and single-spatial mode output with M² less than 1.1. Built on PermAlign(TM) solder-down manufacturing platform, Verdi G5 provides reliability of more than 20,000 hours and is suited for pumping ultrafast and CW Titanium:Sapphire lasers.

Coherent Inc., Laser Group    Santa Clara, CA 95054-1112
Aug 07, 2009 Suited for flow cytometry and other live-cell bio applications, Genesis(TM) 355-150 S is based on optically pumped semiconductor laser technology. Unit offers true CW source of 355 nm UV laser light, avoiding potential high peak power problems arising from quasi CW lasers. With low output noise and single spatial output mode, laser is also suited for egg and fertilized-egg sorting as well as fluorescence-based applications, such as confocal microscopy.

InnoLas Systems GmbH    Krailling   Germany
Jun 05, 2009 With performance up to 25 W, InnoLas NANIO industrial DPSS lasers operate in wavelength of 1064 and 532, and have pulse repetition rate of 500 kHz with single shot. Tube and cable length between laser head and supply unit and/or cooling unit can range from 1-20 m. Units can be used in working processes of marking and structuring of semiconductors, metals, plastics and ceramics. Lasers are suited for manufacturing of solar cells, for micro material processing and scientific applications.

Coherent Inc., Laser Group    Santa Clara, CA 95054-1112
Feb 17, 2009 Mode-locked, frequency tripled, diode pumped, and solid state lasers, Paladin(TM) Advanced 355-10000 and 355-16000 offer 10 and 16 W of power respectively at 80 MHz. They deliver high quality TEM00 beam of M2 less than 1.2 with stability and low noise of less than 1% rms from 10 Hz to 2 MHz. Lasers suit variety of applications in microelectronics fabrication, flat panel display manufacturing, solar cell production, and bioinstrumentation.

Coherent Inc., Laser Group    Santa Clara, CA 95054-1112
Feb 16, 2009 Optically pumped, 561 nm wavelength semiconductor laser Sapphire(TM) 561 offers choice of 50, 75, 100 or 150 mW of output power with noise characteristics less than 0.25% rms from 20 Hz to 2 MHz. Measuring 4.9 x 2.8 x 1.3 in., they suit application in life sciences, proteomics and genomics.

Coherent Inc., Laser Group    Santa Clara, CA 95054-1112
Feb 10, 2009 Based on optically pumped semiconductor laser technology, 2,000 mW CW Genesis(TM) 532-2000 S provides M2 of less than 1.2, no green noise, and overall amplitude noise at 0.06% or better. Laser is completely air-cooled with compact laser head measuring 11 x 6 x 3.3 in. In addition to high throughput applications in life sciences such as flow cytometry and DNA sequencing, laser is suited for inspection or particle detection and measurement applications.

Intense    North Brunswick, NJ 08902
Jan 30, 2008 Offered in standard wavelength of 808 nm with power levels up to 900 W, Hermes QCW Laser Arrays degrade by less than 5% over 2 x 10⁸ shots, making them suited for rangefinding, target designation, and pumping. Units are based on Quantum Well Intermixing process, which increases quantum well band-gap of semiconductor laser in controlled manner. Available as vertically or horizontally stacked assemblies of up to 10 bars, lasers come in lensed and unlensed options.

Coherent, Inc.    Auburn, CA 95603
Jan 23, 2008 Suited for laser direct imaging and semiconductor wafer inspection, Paladin(TM) Advanced 355-8000 features mode quality of less than 1.2, low noise of less than 1% rms from 10 Hz to 2 MHz, and 80 MHz repetition rate. Diode-pumped, solid-state laser also features PermAlign(TM) optics mounting, which makes it insensitive to shock and vibration and ensures stability without need for adjustments. It features Aluminum-free Active Area pump diodes and smart power supply for hands-free operation.

Photodigm, Inc.    Richardson, TX 75081
Jun 04, 2007 Semiconductor Diode Laser Platform features quantum-well epitaxial design enabling power in excess of 500 mW, with wall plug efficiencies up to 50%. Device combines attributes of high power, diffraction-limited beam quality, low astigmatism, and single-frequency operation. Lasers can be produced at wavelengths throughout the semiconductor material spectral range, and evaluation units are available in wavelengths ranging between 920-1,100 nm.

JDSU    San Jose, CA 95131
Feb 05, 2007 With fiber based architecture, Model FCD488 continuous wave 10 and 20 mW 488 nm laser is available in free space and fiber delivered output configurations. Telecom-based, visible solid state laser features low heat dissipation, and utilizes components such as diode lasers with over 100,000 hr lifetime.

Coherent Inc., Laser Group    Santa Clara, CA 95054-1112
Oct 30, 2006 Suited for applications such as biomedicine, microelectronics, and semiconductor inspection, CUBE 445 laser employs all-semiconductor technology and can be directly modulated (analog or digital) at bandwidths of up to 125 MHz. Offering M2 of less than 1.2 and beam divergence of 0.6 mrad, it provides pointing stability of under 6 µrad/°C, and RMS noise level of 0.05%. Laser head measures 3.9 x 1.6 x 1.6 in. and dissipates 3 W of heat.

Optek Technology, Inc.    Carrollton, TX 75006-6905
May 20, 2002 VCSEL (Vertical Cavity Surface Emitting Laser) semiconductor device emits narrow beam of infrared energy from its surface. Source-emitting VCSEL components can be manufactured using traditional semiconductor techniques unlike edge-emitting devices. Features include speeds up to 1.25 Gbps and symmetrical output beam. Sensing applications include light curtains, distance measurement, and industrial position sensing.