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20V MOSFETs are available in SSM3K344R, SSM3K345R, SSM3J355R and SSM3J358R models. Unit is suitable for PCs, laptops and tablets applications and helps to consume low power. Product uses low voltage trench structure process and offers power dissipation rate of 1.0 W. Providing FET switch functionality for power rails up to 40V, MOSFET’s process reduces gate switch charges and on-state... Read More
Available in C3M0065100J (65 mΩ) and C3M0120100J (120 mΩ) configurations with output capacitance of 60 pF and 40 pF respectively, Silicon Carbide Power MOSFETs are suitable for renewable energy, EV battery charging, HV DC/DC converters, and switch mode power supplies applications. Featuring C3M™ technology and N-channel enhancement mode, units offer reverse recovery time of 14 ns... Read More
Operating from 1 MHz to 2700 MHz frequency with +50 Vdc voltage, AFG24S100HR5 RF Power GaN Transistor is suitable for CW, pulse and wideband RF applications such as public mobile radios, ISM and wireless cellular infrastructure. Delivering gain of 16.0 dB CW, 18.0 dB pulse with 64.2% CW, 66.8% pulse efficiency in 2500 MHz narrowband test circuit, unit offers thermal resistance of 0.86ºC/W and... Read More
Requiring 511 mm² board space, DRV832x brushless DC gate drivers and NexFET™ Power Blocks are capable of driving peak current of 160 A. Enabling shorter trace length, units come with 18-volt BLDC motor design. Featuring smart gate-drive architecture, gate drivers adjust field-effect transistor switching to optimize power loss. Available in CSD88584Q5DC and CSD88599Q5DC models, power blocks... Read More
Suitable for power supplies, motor drives, DC-DC and AC-DC converters applications, 40V/45V N-Channel Power MOSFETs with optimized cell structures suppresses spike voltage and ringing during switching. Unit uses U-MOS IX-H low-voltage trench structure for improved switching. Featuring low on-resistance and output charge, MOSFETs support 4.5V logic level drive.Read More
Housed in four-lead TO-247-4 package with separate driver source pin, C3M0075120K C3M™ SiC Power MOSFET features 8 mm creepage distance between drain and source. Offering continuous drain current of 30.8 A and 1200 V drain source voltage, unit comes with 220 nC reverse-recovery charge and 18 ns reverse-recovery time. MOSFET provides 75 mΩ and 51 nC of Rds (on) total gate charge (Qg)... Read More
Suitable for large-signal and common-source amplifier applications, AFM906NT1 Airfast™ RF LDMOS Transistor is operated in 136 to 941 MHz frequency with 7.5 V of supply voltage. Featuring 20.3 dB power gain at 520 MHz, unit offers +37.8 dBm of P1dB and 6.8 W output power. Product offers 70.8 % efficiency.Read More
Housed in 2mm x 2mm PowerPAK® SC-70 package, TrenchFET® SiA468D Power MOSFETs feature on-resistance of 8.4 mΩ at 10 V and 11.4 mΩ at 4.5 V. Units are used for DC/DC conversion and load switching in notebook computers, tablets, VR headsets, and DC-DC bricks. With 37.8 A of continuous drain current, MOSFETs are 100 % RG-tested.Read More
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Available with 13 different RDS(ON) ratings ranging from 1000 mOhms to 32 mOhms, +FET™ Line MOSFETs are housed in traditional thru-hole (TO-220/TO-220FP), surface-mount (DPAK/D2PAK) and advanced (5x6/8x8) device packages. Unit’s smooth switching behavior drives faster design cycles which reduces need of snubber circuits.Read More
Low-profile package for motion control, solar and UPS applications
March 28, 2017 – Geneva, Ill.: Richardson RFPD, Inc. announced today the availability from stock and full design support capabilities for a family of power IGBTs in the new VINco E3 package from Vincotech.
The VINco E3 package features SLC (SoLid Cover) technology in an industry-standard lowprofile package. It... Read More
March 7, 2017 – Geneva, Ill.: Richardson RFPD, Inc. today announces its attendance and participation at the 2017 Applied Power Electronics Conference and Exposition (APEC). The Premier Event in Applied Power Electronics™, APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, including manufacturers,... Read More
Used in Ku and Ka Band Satellite Receiver applications, pHEMTs offer reduced noise and higher gain. Available in CE3512K2, CE3514M4, CE3520K3 and CE3521M4 microwave components, pHEMTs are suitable for applications in Low Noise Block in DBS and downconverters in VSAT systems.Read More
Housed in TO-220AB package, SiHP065N60E V E Series MOSFET features 0.065 Ω at 10 V maximum on-resistance and 49 nC gate charge down. Delivering 93 pF and 593 pF of Co(er) and Co(tr) low output capacitance respectively, unit reduces conduction and switching losses in power factor correction and hard switched DC/DC converters.Read More
Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.Read More
THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement.
Transphorm is a global semiconductor company that develops the industry's... Read More
With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at... Read More
Used as load switches in smartphones and tablets, N-channel MOSFETs: 30V SSM6K513NU and 40V SSM6K514NU uses trench process for efficiency. Unit reduces output charge and on-resistance to 6.5mOhm and 8.9mOhm respectively and reduces heat dissipation by 40%. Unit meets USB Type-C and USB Power Delivery standards. Unit is compact and consumes low power.Read More
Housed in 5 x 6 mm SMT package, 15 W, 50 Ω-matched Qorvo QPD1000 operates from 30 MHz to 1.215 GHz, suitable for handheld radios, radar, and jammer systems. Internally matched, 500 W QPD1003 operates from 1.2–1.4 GHz and 50 V supply rail. Device is suited for military and civilian L-band radar applications. Supplied in air cavity packages, 125 W QPD1008L and 65 W QPD1015L are wideband... Read More
Vishay Intertechnology at Electronica 2016 Nov. 8-11 Munich, Germany Hall A5 Booth 141-142, Hall A6 Booth A11-A13Sep 23, 2016
At electronica 2016, Vishay Intertechnology will be highlighting its latest industry-leading passive component, power MOSFET, IC, diode, and optoelectronics technologies for a wide range of applications. New Products on Display at electronica 2016 vPolyTan™ Multi-Anode Solid Tantalum Chip Capacitors Increase Volumetric Efficiency to Lower Component Counts Combining polymer tantalum technology... Read More
Vishay Intertechnology at Electronica 2016 Nov. 8-11 Munich, Germany Hall A5 Booth 141-142, Hall A6 Booth A11-A13Sep 20, 2016
New Products on Display at electronica 2016 vPolyTan™ Multi-Anode Solid Tantalum Chip Capacitors Increase Volumetric Efficiency to Lower Component Counts Combining polymer tantalum technology with Vishay's patented multi-array packaging (MAP), the T59 series offers up to 25 % better volumetric efficiency than similar devices, which allows for the industry's highest capacitance density.... Read More