Electrical Equipment & Systems, Electronic Components & Devices

High-Voltage MOSFETs suit SMPS applications.

January 23, 2015

Built on second-generation Super Junction Technology, 500 V Series of High-Voltage MOSFETs are optimized for operation in switch mode power supplies to 500 W. Devices range from 12–20 A with low on-resistance from 190–380 mΩ and ultra-low gate charge of 22–45 nC. Designed to withstand high energy pulse in avalanche and commutation modes, RoHS-compliant devices meet stringent 80 PLUS efficiency standards required for consumer products, lighting applications, and ATX/silver box PC SMPS. Read More

Electronic Components & Devices

N-Channel Power MOSFETs achieve low resistance.

January 22, 2015

Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V. Read More

Electronic Components & Devices

Trench PT/FS IGBT Platform reduces conduction, switching losses.

December 11, 2014

Supplied as bare die, Trench IGBT platform includes Punch Through (PT) and Field Stop (FS) technologies and increases efficiency in motor drives, UPSs, solar inverters, and welding machine inverters. Collector-to-emitter voltages, as well as fast and soft turn-on and turn-off, allow low conduction and switching losses while providing breakdown voltages to 650 V for increased reliability. Collector current ratings range from 30–240 A, and available breakdown voltages are 600 and 650 V. Read More

Electronic Components & Devices

N-Channel MOSFETs suit soft switching topologies.

December 8, 2014

Built on Super Junction Technology, 600 V Models SiHx28N60EF and SiHx33N60EF are suited for zero voltage switching/soft switching topologies such as phase-shift bridges and LLC converter half bridges. Minimized reverse recovery charge allows devices to regain ability to block full breakdown voltage quickly, helping to avoid failure from shoot-through and thermal overstress. Offered in 4 packages, 28 A SiHx28N60EF and 33 A SiHx33N60EF feature low on-resistance of 123 Ω and 98 Ω, respectively. Read More

Electronic Components & Devices

IGBT Power Modules control lines rated to 1,700 V-450 A.

November 24, 2014

Intended for motor control and inverter applications, IGBT Power Modules are available in half-bridge, 6-pack, and PIM module designs (standard and custom) in S, D, H, W, and WB packages with ratings up to 1,700 V and 450 A. Rugged semiconductor products, combining speed and efficiency in flexible format, offer short circuit capability and free-wheeling diodes. Positive temperature coefficient devices can be paralleled easily to increase current handling capability. Read More

Electronic Components & Devices

High-Power GaN HEMTs serve C-Band applications.

November 11, 2014

Rated for 200 W continuous wave (CW) and 4.4–5.0 GHz operation, CGHV50200F gallium nitride (GaN) high electron mobility transistor (HEMT) suits tropospheric scatter (troposcatter) communications applications. These 50 Ω, internally matched units, which exhibit 180 W typ PSAT, 11.5 dB typ power gain, and 48% typ power efficiency, allow solid-state power amplifiers (SSPAs) to replace traveling wave tube (TWT) amplifiers in satellite broadcasting systems. Read More

Electronic Components & Devices

Dual Power MOSFET optimizes efficiency in DC/DC applications.

November 7, 2014

Supplied in 6 x 6 mm PQFN package for backside mounting, International Rectifier's IRFHE4250D uses 25 V FastIRFET™ silicon technology for optimal switching performance and features exposed top that maximizes thermal transfer. Features include 60 A Power Block, (<0.75 mm) package profile, low charge control MOSFET (13 nC typ), low RDS(ON) synchronous MOSFET (<1.35 mΩ), and intrinsic Schottky diode. RoHS-compliant, halogen-free product targets 12 V input DC/DC synchronous buck applications. Read More

Electronic Components & Devices, Green & Clean

IGBT Power Modules serve solar inverter and UPS applications.

October 16, 2014

For 3-level neutral point clamp (NPC) topologies, VS-ENQ030L120S provides collector-to-emitter breakdown voltage of 1,200 V and collector current rating of 30 A. For 3-level inverter stages, VS-ETF075Y60U and VS-ETF150Y65U respectively offer choice of 75 and 150 A collector current ratings and 600 and 650 V collector-to-emitter breakdown voltages and perform up to +175 °C. For double boost converters, 15 A VS-ETL015Y120H features collector-to-emitter breakdown voltage of 1,200 V. Read More