Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
May 24, 2013 Available in 8 different packages and 22 additional models, E Series offers extended on-resistance from 30–600 mΩ at 10 V and max current ratings from 6–105 A. RoHS-compliant, 650 V devices withstand high energy pulses in avalanche and commutation modes with guaranteed limits through 100% UIS testing. Based on Siliconix Super Junction Technology, MOSFETs are suited for switch mode applications, including PFC, server/telecom power systems, UPS systems, battery chargers, and LED lighting.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
May 24, 2013 Housed in 3 x 6 mm DFN or 2.5 x 4.5 mm SOT-89 package, GaN in Plastic Transistors operate at 50 V drain bias and leverage sophisticated thermal management techniques for reliability in surface mount applications. Units are available in 90, 50, and 15 W models that can be mounted on PCBs via ground/thermal arrays. Featuring internal stress buffers that allow operation up to 200°C channel temperature, transistors are suited for ultra compact military and civilian radar systems.  

ON Semiconductor, LLC    Phoenix, AZ 85008
May 23, 2013 Available in 1,200 and 1,350 V versions with current ratings of 20, 30, and 40 A, Field Stop II NGTBxxN120IHRWG and NGTBxxN135IHRW are suitable for induction heating and soft switching applications operating at medium frequencies of 15–30 kHz. Models NGTBxxN120FL2WG and NGTBxxN135FL2WG, featuring operational junction temperature range of -55 to +175°C and current ratings up to 100 A, are designed specifically for solar inverter, UPS, and inverter welder applications.

Advanced Power Electronics Corp    San Jose, CA 95118
May 23, 2013 Available in TO-220CFM through-hole package with high isolation capability and low thermal resistance between tab and external heat sink, Models AP11S60-HF-3, AP14S50-HF-3, and AP20S60-HF-3 serve as main switching devices for universal 90–265 Vac converter designs. Devices provide high blocking voltage to withstand voltage surges in demanding power systems, making them suited for PFC correction and PWM stages in servers, telecom rectifiers, PCs, and lighting systems.

STMicroelectronics    Lexington, MA 02421
May 15, 2013 Supplied in TO247-4 four-lead package, MDmesh™ V Super-Junction MOSFET STW57N65M5-4 will enable increased energy efficiency in active PFC circuits and full-bridge or half-bridge power converters for consumer and industrial electronic products. Product provides direct source connection used only for switching control; extra lead increases switching efficiency, reduces energy losses, and allows higher-frequency operation for more compact power supplies.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
May 14, 2013 Consisting of gold-metalized pre-matched GaN on Silicon Carbide transistor, MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain, 55% efficiency, and 300 µs pulse. High breakdown voltages allow for operation at 50 V under extreme load mismatch conditions. Operating in frequency range of 1,200–1,400 MHz, HEMT transistor is available in both flanged and flangeless packages.

Advanced Power Electronics Corp    San Jose, CA 95118
May 07, 2013 Suited for battery management and protection applications, Model AP9922GEO-HF-3 dual N-channel MOSFET features RDS(on) of 16 mΩ while model AP9923GEO-HF-3 dual P-channel unit has RDS(on) of 25 mΩ. Available in TSSOP-8 package, both products can operate with gate drive down to 1.8 V. Units are RoHS-compliant and halogen-free.

Linear Integrated Systems, Inc.    Fremont, CA 94538
May 07, 2013 Available in surface mount SOIC-8, through-hole TO-71, and smaller SOT23-6 packages as well as ROHS compliant versions, Model LSK489 features ultra low noise of 1.5 nV at 1 KHz and gate-to-drain capacitance of 4 pF. Design consists of interleaving both JFETs on same piece of silicon to provide optimal matching and thermal tracking, with nearly zero popcorn noise. Applications include microphone amplifiers, phono preamplifiers, operational amplifiers, sonic imaging, and high-speed comparators.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Apr 23, 2013 Housed in thermally enhanced PowerPAK® SO-8 package, Model SiR872ADP extends ThunderFET® technology to 150 V. Device offers low on-resistance of 18 mΩ at 10 V and 23 mΩ at 7.5 V while maintaining low gate charge of 31 nC at 10 V and 22.8 nC at 7.5 V. N-channel TrenchFET® power MOSFET is optimized for primary-side switching and secondary-side synchronous rectification in DC/DC converters, DC/AC inverters, and boost converters for telecom bricks, solar micro-inverters, and brushless DC motors.

Ironwood Electronics, Inc.    St. Paul, MN 55121
Apr 10, 2013 Designed for 0.5 mm pitch BGA 253 pin DDR4 with 8 x 13.5 mm package size, CG-BGA-5019 operates at up to 10 GHz with less than 1 dB insertion loss. Footprint lets inductors, resistors, and decoupling capacitors be placed within close proximity to device for impedance tuning. Along with double latch lid with integrated compression mechanism, features include elastomer contactor construction, 20 mΩ typ contact resistance (per pin), 0.11 nH pin self inductance, and 0.028 nH mutual inductance.

Transphorm Inc    Goleta, CA 93117
Mar 22, 2013 Based on EZ-GaN™ technology, 600 V Total GaN™ TPH3006PS HEMT comes in TO-220 package with low on-state resistance of 150 mΩ and low reverse-recovery charge of 54 nC. Also available in industry-standard TO-220 packages, TPS3410PK and TPS3411PK GaN diodes offer 6 A and 4 A operating currents, respectively, with forward voltage of 1.3 V. Applications include power supplies and adapters, PV inverters, motor drives, and power conversion for electric vehicles.

Microsemi    Irvine, CA 92614
Mar 21, 2013 With 25, 50, and 70 A current ratings, 1,200 V non-punch through (NPT) IGBTs are based on Power MOS 8™ technology and can be packaged with Microsemi FREDs or silicon carbide Schottky diodes. Gate charge promotes accelerated switching, while hard switching operation greater than 80 kHz lends to power conversion efficiency. SMT backside solderable D(3) package option is available for these Short Circuit Withstand Time Rated (SCWT) products.

Advanced Power Electronics Corp    San Jose, CA 95118
Mar 14, 2013 Housed in TO-92 through-hole package, Model AP4002T is suited for low current applications such as small switch power supplies and load switches. N-channel enhancement-mode power MOSFET features BVDSS of 600 V, RDS(on) of 5 Ω, and  400 mA ID. Operating from -55 to 150°C, miniature device is RoHS-compliant and halogen-free.

Cissoid    Mont Saint Guibert 1435  Belgium
Mar 11, 2013 Available in hermetically sealed TO-257 package, CHT-NEPTUNE is built for power converter applications in high-temperature and harsh environments. Unit has breakdown voltage in excess of 1,200 V and is capable of switching currents up to 10 A at max temperature. Switch can be controlled with typical gate voltage of -2 V/+20 V. With VGS=20 V, transistor's RDS-On exhibits 90 mΩ at 25°C and 150 mΩ at 225°C. Device features temperature-independent switching energy of less than 400 µJ at 600 V/10 A.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Jan 16, 2013 Housed in 1.6 x 1.6 x 0.6 mm CSP MICRO FOOT® package, 8 V n-channel Si8424CDB and -20 V p-channel Si8425DB offer maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at 4.5 V gate drive. Smaller 8 V n-channel Si8466EDB, measuring 1 x 1 x 0.55 mm, features max on-resistance of 43 mΩ at 4.5 V and provides 3,000 V typical ESD protection. RoHS-compliant and halogen-free, TrenchFET® power MOSFETs are suited for battery or load switching in power management applications for portable electronics.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Jan 08, 2013 Respectively, SiB456DK and SiA416DJ TrenchFET® power MOSFETs come in thermally enhanced PowerPAK® SC-75 1.6 x 1.6 mm and PowerPAK SC-70 2 x 2 mm packages and offer on-resistance of less than 200 and 100 mΩ. Respective on-resistance times gate charge values for SiA416DJ are 540 mΩ-nC at 10 V and 455 mΩ-nC at 4.5 V, while values for SiB456DK are 611 mΩ-nC at 10 V and 558 mΩ-nC at 4.5 V. MOSFETs are optimized for boost converters, low-power DC/AC inverters, and primary side switching.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Dec 07, 2012 Housed in 7-pin D²PAK package, 40 V n-channel TrenchFET® SQM200N04-1m1L features ultra-low on-resistance of 1.1 mΩ max at 10 V and 1.3 mΩ max at 4.5 V. Continuous drain current of 200 A can be sustained, enabling engineers to create designs with additional margin for safety-critical applications. Designed to withstand single pulse avalanche events of 100 A and 500 mJ, AEC-Q101-qualified MOSFET is RoHS-compliant and operates from -55 to +175°C with thermal resistance of 0.4°C/W.

Cissoid    Mont Saint Guibert 1435  Belgium
Dec 05, 2012 Available in TDFP hermetically sealed, ceramic SMD package with 5 x 5.5 mm footprint, Model CHT-NMOS8001 is capable of switching current up to 1 A or blocking voltage up to 80 V with drain cut-off current as low as 10 µA at 225°C. Device handles peak currents up to 3.3 A at 225°C in repetitive pulse conditions. With RDS-ON of 0.76 Ω at 25°C and total switching energy of 413 nJ at 40 V/1 A, logic-level device is suited for low- and medium-power switching, power management, and signal conditioning.

Powerex, Inc.    Youngwood, PA 15697
Dec 03, 2012 Developed for use on 4,160 Vac lines, QID3320002 (3,300 V/200 A) and QID4515002 (4,500 V/150 A) have respective isolation voltage values of 7.7KV RMS and 9.0KV RMS. Both models incorporate optimized thermal management system, with AIN ceramic substrate and copper baseplate, and offer creepage and clearance that meet IEC 60077-1. Suitable areas of use include utility power supplies, pulse power, traction drives, medium voltage industrial drives, and auxiliary power inverters.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Nov 27, 2012 Supplied in 3.3 x 3.3 x 0.75 mm package, Si7655DN offers respective max on-resistance of 3.6, 4.8, and 8.5 mΩ max at -10, -4.5, and -2.5 V gate drive. Applications include load switching and hot swapping in industrial systems; adaptor, battery, and load switches in charger circuits; and power management for mobile computing devices. Products can also be used for redundancy switch, OR-ing, and supervisory applications in fixed telecom, cell phone base station, and server/computer systems.