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Electronic Components & Devices -> Electronic Components -> Transistors


Transistors




(Showing headlines 1 - 20)   more ....
MOSFET Transistors operate below and above -60 to +230°C range.

MOSFET Transistors operate below and above -60 to +230°C range.

X-REL Semiconductor    Grenoble 38100  France
Jul 08, 2014 Mid-power P-channel transistors XTR2N0325 and XTR2N0350 are intended for max operation drain-source voltage of -30 V, while XTR2N0525 and XTR2N0550 can sustain drain-source voltages of up to -50 V. Respectively, on-state resistance ratings for small signal transistors XTR2N0307 (30 V P-channel MOSFET) and XTR2N0807 (80 V N-channel MOSFET) are 7 Ω and 9.1 Ω at 230°C, and continuous drain currents are 350 mA (900 mA peak) and 200 mA (450 mA peak).

N-Channel Power MOSFETs minimize losses.

N-Channel Power MOSFETs minimize losses.

ON Semiconductor, LLC    Phoenix, AZ 85008
May 30, 2014 Rated at 25 V and available with or without integrated Schottky diode, Series NTMFS4Hxxx and NTTFS4Hxxx MOSFETs are suited for server and telecom switching applications, high power density DC-DC converters, and to support synchronous rectification in point-of-load modules. RDSon performance of 0.7 mΩ and low input capacitance of 3780 pF ensure conduction, switching, and driver losses are minimized.

Normally-Off 100V GaN Transistors come in low-inductance package.

GaN Systems Corp.    Ann Arbor, MI 48104
May 30, 2014 Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge. RoHS-compliant, near chipscale, embedded GaNPX package minimizes inductance and optimizes thermal performance.

Normally-Off 650 V GaN Transistors aid high-speed system design.

GaN Systems Corp.    Ann Arbor, MI 48104
May 30, 2014 Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that optimizes thermal performance as well as eliminates wire bonds and thereby minimizes inductance.

SiC MOSFETs suit high-voltage industrial applications.

Microsemi Corporation    Irvine, CA 92614
May 29, 2014 Designed for high-power industrial applications where efficiency is critical, 1,200 V Silicon Carbide MOSFETs are suited for solar inverters, electric vehicles, welding, and medical devices. Units are rated at 80 mΩ and 50 mΩ and provide development flexibility by offering both industry standard TO-247 and SOT-227 packages. In addition to optimized short circuit withstand, devices feature ultra-low gate resistance for minimizing switching energy loss.

IGBT and Rectifier Diode Modules come in diverse package designs.

IGBT and Rectifier Diode Modules come in diverse package designs.

Littelfuse, Inc.    Des Plaines, IL 60016
May 23, 2014 Intended for power control applications, Half-Bridge Circuit IGBT Modules come in S, D, or WD packages with ratings up to 1,200 V and 600 A. Minimized loss promotes efficiency and switching speed, while short circuit capability reduces protection requirements. With ratings up to 1,800 V and 200 A, Phase Leg and Common Cathode Circuit Rectifier Diode Modules come in S and A packages. Reverse recovery loss promotes operational efficiency, and forward voltage allows for reduced heat dissipation.

N-Channel MOSFET (150 V) comes in 2 x 2 mm package.

N-Channel MOSFET (150 V) comes in 2 x 2 mm package.

Vishay    Malvern, PA 19355
May 12, 2014 Supplied in thermally enhanced PowerPAK® SC-70 package with 2 x 2 mm footprint, Vishay Siliconix SiA446DJ 150 V n-channel MOSFET increases efficiency in space-constrained applications by reducing conduction and switching losses. RoHS-compliant, halogen-free, and 100% RG- and UIS-tested product, built on ThunderFET® technology, offers low max on-resistance of 177 mΩ at 10 V, 185 mΩ at 7.5 V, and 250 mΩ at 6 V.

P-Channel Power MOSFET offers low RDS(ON) values.

P-Channel Power MOSFET offers low RDS(ON) values.

Vishay    Malvern, PA 19355
May 01, 2014 Supplied in 2 x 2 mm PowerPAK® SC-70 package, SiA453EDJ p-channel TrenchFET® power MOSFET conserves space and increases power efficiency in portable electronics. RoHS-compliant and halogen-free product, 100% Rg and UIS tested, offers on-resistance of 18.5 mΩ (-10 V), 23.5 mΩ (-4.5 V), 26.0 mΩ (-3.7 V), and 37.7 mΩ (-2.5 V) as well as 4,000 V built-in ESD protection. While -30 V VDS provides headroom needed for over-voltage spikes, 12 V VGS enables on-resistance ratings of -3.7 and -2.5 V.

Power Conversion Driver/MOSFET works with high-performance FPGAs.

Altera Corp.    San Jose, CA 95134
Apr 15, 2014 Model ET4040 monolithic 40A driver plus synchronous MOSFET powertrain enables design of point-of-load power solutions. It provides continuous output current over -40 to + 85°C temperature range and input from 4.5-14 V. On-board monolithic current sense maximizes reliability and thermal performance. Powering FPGA core supply rails in single- or multi-phase configurations, unit also suits VDDQ supply rails for DDR3, DDR4, and QDR memories and supplies ASIC and ASSPs in servers and communications systems.

Dual N-Channel Power MOSFET features low on-resistance.

Dual N-Channel Power MOSFET features low on-resistance.

Vishay    Malvern, PA 19355
Mar 31, 2014 Integrating 2 MOSFETs into one PowerPAK® SC-70 package with 2 x 2 mm footprint, halogen-free and RoHS-compliant SiA936EDJ helps conserve PCB space, simplify designs, and increase power efficiency in portable electronics. This dual n-channel TrenchFET® power MOSFET offers low on-resistance for 20 V (12 and 8 V VGS) devices at 4.5 and 2.5 V gate drives. On-resistance is 34 mΩ (4.5 V), 37 mΩ (3.7 V), and 45 mΩ (2.5 V), and built-in ESD protection is rated at 2,000 V.

Power MOSFET serve high-current motor control and power designs.

Texas Instruments, Inc., Semiconductors    Dallas, TX 75243
Mar 31, 2014 Supporting 40–100 V input, NexFETs™ include 14 power MOSFETs in TO-220 and lead (Pb)-free 5 x 6 mm SON packages. These 40, 60, 80, and 100 V N-channel devices, suited for high-current motor control and power applications, come in plastic packages with avalanche capability to support high-stress motor control applications. While CSD19506 supports 2.0 mΩ of Rds(on) at up to 80 V input, CSD19536 achieves 2.3 mΩ of Rds(on) at 100 V input.

Super Junction MOSFETs delivers high-speed switching.

Toshiba America Electronic Components (TAEC)    Irvine, CA 92618-1811
Mar 27, 2014 Supplied in TO-247 package, models TK31N60X, TK39N60X, and TK62N60X of DTMOS IV-H series use single epitaxial process and achieve high speed switching performance while maintaining low ON-resistance level (0.088, 0.065, and 0.040 max RDS(ON)) – all without loss of power. This is accomplished via reduction of parasitic capacitance between Gate and Drain, which also promotes power efficiency. Max VDSS value is 600 V for all models, and respective max ID values are 30.8, 38.8, and 61.8 A.

JEDEC-Qualified GaN-on-Silicon HEMTs carry 600 V rating.

JEDEC-Qualified GaN-on-Silicon HEMTs carry 600 V rating.

Transphorm Inc    Goleta, CA 93117
Mar 26, 2014 Low-profile, 600 V GaN-based HEMTs (high electron mobility transistors) utilize EZ-GaN™ technology. Supplied in PQFN88 packages, TPH3002LD and TPH3002LS feature 290 mΩ RDS(on), 29 nC Qrr, and low inductance for high-frequency switching capability. They also feature kelvin connection to isolate gate circuit from high-current output circuit and reduce EMI. Supplied in TO220 package, TPH3002PD/TPH3002PS suit smaller, lower power applications such as adapters and all-in-one computer power supplies.

IGBT/MOSFET Driver suits high working voltage applications.

IGBT/MOSFET Driver suits high working voltage applications.

Vishay    Malvern, PA 19355
Mar 26, 2014 Featuring minimum 10 mm clearance and external creepage distance, Model VOW3120-X017T is suited for motor drives, alternative energy, welding equipment, and other high working voltage applications. Driver features typical common-mode noise-rejection values of 50 kV/µs and isolation ratings of VIORM = 1,414 V and VIOTM = 8,000 V. With current consumption of 2.5 mA, device boasts typical delays of less than 250 ns and rise and fall times of less than 100 ns.

High Electron Mobility Transistors are JEDEC-qualified.

Transphorm Inc    Goleta, CA 93117
Mar 25, 2014 Supplied in low-profile PQFN88 packages with patented EZ-GaN™ technology, TPH3002LD and TPH3002LS are 600 V GaN HEMTs featuring 290 mΩ RDS(on), 29 nC Q(rr), and low inductance for optimal high-frequency switching capability. LD devices also feature kelvin connection to isolate gate circuit from high-current output circuit to further minimize EMI. For smaller, lower power applications, TO220-packaged TPH3002PD and TPH3002PS also feature 290 mΩ RDS(on) and 29 nC Q(rr ).

Automotive Power MOSFETs offer RDS(on) down to 8.9 mOhm.

Automotive Power MOSFETs offer RDS(on) down to 8.9 mOhm.

Vishay    Malvern, PA 19355
Mar 06, 2014 With continuous drain currents to 50 A, 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L are optimized for injector boost applications in automotive engine control units. Model SQD50N10-8m9L in DPAK package provides on-resistance down to 8.9 mΩ at 10 V, while Models SQJ402EP and SQJ488EP, housed in 5 x 6 mm PowerPAK SO-8L package, offer values down to 11 mΩ and 21 mΩ at 10 V, respectively. All AEC-Q101-qualifed TrenchFET® power MOSFETs with ThunderFET® technology operate from -55 to +175°C.

Power MOSFETs  feature very low on-resistance.

Power MOSFETs feature very low on-resistance.

Advanced Power Electronics Corp    San Jose, CA 95118
Feb 27, 2014 Available in TO-263 and TO-220 packages, respectively, Models AP99T03GS-HF-3 and AP99T03GP-HF-3 feature low on-resistance of 2.5 mΩ, drain-source breakdown voltage of 30 V, and continuous drain current of 120 A. Model AP99T03GS-HF-3 is suited for commercial and industrial surface-mount applications, while Model AP99T03GP-HF-3 is intended for applications where small PCB footprint or attached heatsink is required. Both N-channel MOSFETs are halogen-free and RoHS-compliant.

Half-Bridge Gate Driver IC features programmable dead time.

Half-Bridge Gate Driver IC features programmable dead time.

IXYS Integrated Circuits Division    Aliso Viejo, CA 92656
Jan 24, 2014 Available in 14-pin SOIC and 14-lead DIP packages, IX21844 can drive – in half-bridge, full-bridge, and 3-phase configurations – discrete power MOSFETs and IGBTs that operate up to 600 V. Both high and low side outputs feature integrated power DMOS transistors, each capable of sourcing 1.4 A and sinking 1.8 A gate drive current. Absolute maximum rating of 700 V provides additional margin for high-voltage applications. Programmable dead time can be set between 400 nsec and 5 µsec.

Off-Line PWM Controllers integrate power MOSFET.

Off-Line PWM Controllers integrate power MOSFET.

Allegro Microsystems, Inc.    Worcester, MA 01615
Jan 23, 2014 Available in DIP-8 and SOIC-8 packages, STR4A100 series incorporates sense MOSFET and current mode PWM controller IC. Products use secondary side regulation topology and make it possible to lower stand-by power to <10 mW. Low standby power is accomplished by automatic switching between PWM operation in normal operation and burst-oscillation under light load conditions. Suitable areas of use include appliance, office automation, consumer, and industrial markets.

Asymmetric Dual N-Channel MOSFET features low on-resistance.

Asymmetric Dual N-Channel MOSFET features low on-resistance.

Vishay    Malvern, PA 19355
Jan 17, 2014 Housed in 3 x 3 mm PowerPAIR® package utilizing TrenchFET Gen IV technology, 30 V Siliconix SiZ340DT is optimized for synchronous buck designs in cloud computing infrastructures, servers, telecommunication equipment, and client-side electronic devices. Low-side Channel 2 MOSFET of SiZ340DT offers low on-resistance of 5.1 mΩ at 10 V gate drive and 7.0 mΩ at 4.5 V, while high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V.




(Showing headlines 1 - 20)   more ....



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