Transistors

Electronic Components & Devices

C3M0075120K SiC Power MOSFET provides 58 pF output capacitance.

April 25, 2017

Housed in four-lead TO-247-4 package with separate driver source pin, C3M0075120K C3M™ SiC Power MOSFET features 8 mm creepage distance between drain and source. Offering continuous drain current of 30.8 A and 1200 V drain source voltage, unit comes with 220 nC reverse-recovery charge and 18 ns reverse-recovery time. MOSFET provides 75 mΩ and 51 nC of Rds (on) total gate charge (Qg)... Read More

Electronic Components & Devices

Airfast™ RF LDMOS Transistor is designed for two-way radio applications.

April 14, 2017

Suitable for large-signal and common-source amplifier applications, AFM906NT1 Airfast™ RF LDMOS Transistor is operated in 136 to 941 MHz frequency with 7.5 V of supply voltage. Featuring 20.3 dB power gain at 520 MHz, unit offers +37.8 dBm of P1dB and 6.8 W output power. Product offers 70.8 % efficiency.

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Electronic Components & Devices

TrenchFET® SiA468D Power MOSFETs are halogen-free and RoHS-compliant.

April 12, 2017

Housed in 2mm x 2mm PowerPAK® SC-70 package, TrenchFET® SiA468D Power MOSFETs feature on-resistance of 8.4 mΩ at 10 V and 11.4 mΩ at 4.5 V. Units are used for DC/DC conversion and load switching in notebook computers, tablets, VR headsets, and DC-DC bricks. With 37.8 A of continuous drain current, MOSFETs are 100 % RG-tested.

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Electronic Components & Devices

+FET™ Line MOSFET reduces switching noise.

April 1, 2017

Available with 13 different RDS(ON) ratings ranging from 1000 mOhms to 32 mOhms, +FET™ Line MOSFETs are housed in traditional thru-hole (TO-220/TO-220FP), surface-mount (DPAK/D2PAK) and advanced (5x6/8x8) device packages. Unit’s smooth switching behavior drives faster design cycles which reduces need of snubber circuits.

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Electronic Components & Devices

Richardson RFPD Introduces Lineup of Power IGBTs in New VINco E3 Package from Vincotech

March 31, 2017

Low-profile package for motion control, solar and UPS applications

March 28, 2017 – Geneva, Ill.: Richardson RFPD, Inc. announced today the availability from stock and full design support capabilities for a family of power IGBTs in the new VINco E3 package from Vincotech.

The VINco E3 package features SLC (SoLid Cover) technology in an industry-standard lowprofile package. It... Read More

Communication Systems & Equipment, Electrical Equipment & Systems, Electronic Components & Devices

Richardson RFPD at APEC 2017

March 10, 2017

March 7, 2017 – Geneva, Ill.: Richardson RFPD, Inc. today announces its attendance and participation at the 2017 Applied Power Electronics Conference and Exposition (APEC). The Premier Event in Applied Power Electronics™, APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, including manufacturers,... Read More

Electronic Components & Devices

pseudomorphic High Electron Mobility Transistor used in 24GHz sensors.

February 9, 2017

Used in Ku and Ka Band Satellite Receiver applications, pHEMTs offer reduced noise and higher gain. Available in CE3512K2, CE3514M4, CE3520K3 and CE3521M4 microwave components, pHEMTs are suitable for applications in Low Noise Block in DBS and downconverters in VSAT systems.

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Electronic Components & Devices

SiHP065N60E V E Series MOSFET can withstand overvoltage transients.

January 30, 2017

Housed in TO-220AB package, SiHP065N60E V E Series MOSFET features 0.065 Ω at 10 V maximum on-resistance and 49 nC gate charge down. Delivering 93 pF and 593 pF of Co(er) and Co(tr) low output capacitance respectively, unit reduces conduction and switching losses in power factor correction and hard switched DC/DC converters.

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Electronic Components & Devices

GaN RF Transistor are CW and pulse capable.

January 16, 2017

Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.

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Electronic Components & Devices

Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites

December 16, 2016

THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement.

Transphorm is a global semiconductor company that develops the industry's... Read More

Electronic Components & Devices

C3M0065100K MOSFETS provide notch between drain and source pins.

December 2, 2016

With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at... Read More

Electronic Components & Devices

N-channel MOSFETs for electric power switching applications.

December 1, 2016

Used as load switches in smartphones and tablets, N-channel MOSFETs: 30V SSM6K513NU and 40V SSM6K514NU uses trench process for efficiency. Unit reduces output charge and on-resistance to 6.5mOhm and 8.9mOhm respectively and reduces heat dissipation by 40%. Unit meets USB Type-C and USB Power Delivery standards. Unit is compact and consumes low power.

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Electronic Components & Devices

GaN on SiC HEMTs suit aerospace and defense applications.

September 30, 2016

Housed in 5 x 6 mm SMT package, 15 W, 50 Ω-matched Qorvo QPD1000 operates from 30 MHz to 1.215 GHz, suitable for handheld radios, radar, and jammer systems. Internally matched, 500 W QPD1003 operates from 1.2–1.4 GHz and 50 V supply rail. Device is suited for military and civilian L-band radar applications. Supplied in air cavity packages, 125 W QPD1008L and 65 W QPD1015L are wideband... Read More

Electronic Components & Devices

Vishay Intertechnology at Electronica 2016 Nov. 8-11 Munich, Germany Hall A5 Booth 141-142, Hall A6 Booth A11-A13

September 23, 2016

At electronica 2016, Vishay Intertechnology will be highlighting its latest industry-leading passive component, power MOSFET, IC, diode, and optoelectronics technologies for a wide range of applications. New Products on Display at electronica 2016 vPolyTan™ Multi-Anode Solid Tantalum Chip Capacitors Increase Volumetric Efficiency to Lower Component Counts Combining polymer tantalum technology... Read More

Electronic Components & Devices

Vishay Intertechnology at Electronica 2016 Nov. 8-11 Munich, Germany Hall A5 Booth 141-142, Hall A6 Booth A11-A13

September 20, 2016

New Products on Display at electronica 2016 vPolyTan™ Multi-Anode Solid Tantalum Chip Capacitors Increase Volumetric Efficiency to Lower Component Counts Combining polymer tantalum technology with Vishay's patented multi-array packaging (MAP), the T59 series offers up to 25 % better volumetric efficiency than similar devices, which allows for the industry's highest capacitance density.... Read More

Electronic Components & Devices

Richardson RFPD, Inc. LDMOS transistor designed to decrease amplifier size and BOM.

September 12, 2016

Offering an output of 1500 W CW at 50 V, MRF1K50H eliminates the need for large number of transistors in high-power RF amplifiers. Suitable for applications ranging from laser and plasma sources to particle accelerators, unit operates upto 500 MHz. Product has high drain-source avalanche energy absorption capability and a wide frequency range for input and output, and is adaptable for... Read More

Electronic Components & Devices

N-Channel Power MOSFET targets automotive applications.

September 9, 2016

Fabricated using U-MOS-VIII-H process node, AEC-Q101 qualified TK160F10N1L (100 V, 160 A) keeps current balances in parallel operation in automotive applications. TO-220SM(W) package incorporates copper connector technology for optimal current handling and thermal as well as minimal package resistance, and design promotes reliability by eliminating bond wires. Characteristics include max... Read More

Electronic Components & Devices

New Yorker Electronics Now Showcasing New Line of 2016 Vishay Super 12 Power MOSFETs

August 22, 2016

Vishay Siliconix SiHH E-Series (SiHH26N60E, SiHH21N60E, SiHH14N60E, SiHH11N60E) Offers Space-Saving Alternatives to Conventional Solutions NORTHVALE, NEW JERSEY – New Yorker Electronics is now offering the Vishay 600V E Series power MOSFETs in the compact PowerPAK® 8x8 package. The construction of the PowerPAK® allows one of the source pins to be arranged as a dedicated Kelvin source... Read More

Electronic Components & Devices

High-Voltage MOSFETs enable efficient, high-speed switching.

August 19, 2016

Targeting switching voltage regulator designs, N-channel enhancement mode MOSFETs are based on pi-MOS VIII (Pi-MOS-8) planar semiconductor process. Max leakage current is 10 µA, and gate threshold voltage range is 2.5–4.0 V. While 2.5 A TK3A90E and 4.5 A TK5A90E feature VDSS ratings of 900 V and respective RDS(ON) ratings of 3.7 and 2.5 Ω (typ), 4.0 A TK4A80E and 5.0A TK5A80E offer... Read More

Electronic Components & Devices

N-Channel Power MOSFETs come in 5 x 6 mm package.

July 12, 2016

Housed in surface-mount PowerPAK® SO-8L package, 600 V Model SiHJ8N60E and 650 V Models SiHJ6N65E and SiHJ7N65E offer space-saving alternatives to MOSFETs in TO-252 package for lighting, industrial, telecom, computing, and consumer applications. Devices feature max on-resistance down to 0.52 Ω at 10 V and ultra-low gate charge down to 17 nC. Compared to leadless DFN packages, gullwing lead... Read More