Transistors

Electrical Equipment & Systems, Electronic Components & Devices

DC/DC Power Modules (5 and 3 A) offer optimized density, efficacy.

May 25, 2016

Single-channel, pin-compatible ISL8205M (5 A) and ISL8202M (3 A), supplied in 4.5 x 7.5 x 1.85 mm, 22-lead QFN package, deliver up to 95% efficiency and provide POL conversions for FPGAs, DSPs, and MCUs. Design incorporates controller, MOSFETs, inductor, and passive components within encapsulated module to simplify system design. Supporting direct mounting on backside of PCB, these DC/DC step-down power modules support 2.6&ndash;5.5 V input and offer adjustable output down to 0.6 V.<br /> Read More

Electrical Equipment & Systems, Electronic Components & Devices

Universal PMIC supports low power FPGA and SoC processors.

May 20, 2016

Housed in 4 x 4 mm QFN package, Model XR77103 integrates 3 synchronous MOSFET power stages, offering power management solution for broad range of FPGAs, SoCs, DSPs, and video processors. I2C interface allows users to control output voltage from 0.8&ndash;6 V, switching frequency from 300 kHz to 2.2 MHz, power sequencing, and current limit. Model XR77103 operates from 4.5&ndash;14 V input supply, and all 3 outputs are designed for 2 A load current with peak current up to 3 A. Read More

Electronic Components & Devices

DMOS FET Arrays feature 1.5 A sink-output driver.

May 16, 2016

Respectively differing for their use of active high or low control logic, TBD62064A and TBD62308A series offer 4 channels of 50 V/1.5 A output. Four channels can also be paralleled to increase current driving capability. Manufactured using 130 nm BiCD process technology, products offer control inputs up to 25 V and feature 4 common cathode clamp diodes. Available packages include HSOP16, DIP16, and SSOP24. Read More

Electronic Components & Devices

IGBTs suit high power switching systems.

May 12, 2016

Utilizing proprietary Ultra Field Stop trench technology, Model NGTB40N120FL3WG has Ets of 2.7 mJ, while Model NGTB25N120FL3WG has Ets of 1.7 mJ. Both devices feature VCEsat of 1.7 V at their respective rated currents. Model NGTB40N120L3WG, optimized for low conduction losses, has VCEsat of 1.55 V, at rated current, with Ets of 3 mJ. All RoHS-compliant 1,200 V products are co-packaged with fast recovery diode that has soft turn-off characteristics and still offers minimal reverse recovery losses. Read More

Electronic Components & Devices

Fast Body Diode MOSFETs are rated for voltages to 650 V.

May 10, 2016

Increasing voltage headroom for soft switching in industrial, telecom, and renewable energy applications, models SiHx21N65EF (21 A), SiHx28N65EF (28 A), and SiHG33N65EF (33 A) offer respective on-resistance down to 157, 102, and 95 m&Omega;. Reverse recovery charge (Qrr) allows devices to block full breakdown voltage to help avoid failure from shoot-through and thermal overstress as well as increase reliability in zero voltage switching (ZVS)/soft switching topologies. Read More

Electronic Components & Devices

GaN HEMT Die (28 V, 30 W) supports up to 8 GHz operation.

May 4, 2016

As 28 V, 30 W GaN HEMT (high electron mobility transistor) bare die, CGH80030D exhibits 12 dB typ small signal gain at 8 GHz, 17 dB typ small signal gain at 4 GHz, and 30 W typ PSAT. Suitable applications include UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and 2-way private radios. Read More

Electronic Components & Devices

Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.

March 30, 2016

Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET) lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 m&Omega; and Qrr of 175 nC help engineers improve system reliability, performance, and power density, and cascode configuration (EZ-GaN&trade;) can be driven with off-the-shelf drivers.<br /> Read More

Electrical Equipment & Systems, Electronic Components & Devices

Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales

March 21, 2016

New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to... Read More

Electrical Equipment & Systems, Electronic Components & Devices, Optics & Photonics

Vishay Intertechnology to Exhibit Industry-Leading MOSFETs, ICs, Passive Components, Diodes, and Optoelectronics at APEC 2016

March 16, 2016

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2016, taking place March 20-24 in Long Beach, California. In booth 2017, the company will be highlighting its latest industry-leading power MOSFET, IC, passive component, diode, and optocoupler technologies for a wide range of... Read More

Electrical Equipment & Systems, Electronic Components & Devices, Test & Measuring Instruments

Wolfspeed to Exhibit SiC Power Portfolio at APEC 2016

March 9, 2016

Wolfspeed, A Cree Company and a leading global supplier of silicon carbide (SiC) power products — including best-in-class SiC MOSFETs, Schottky diodes, and modules — will be showcasing its industry-leading solutions at this year’s Applied Power Electronics Conference and Exposition (APEC 2016). The annual conference, which will take place March 20 – 24 in Long Beach, Calif., is globally... Read More

Communication Systems & Equipment, Electronic Components & Devices

Wolfspeed Has Shipped GaN RF Devices Surpassing 1.3 Gigawatts Output Power While Achieving Industry-Leading Reliability

March 8, 2016

Durham, N.C. - Wolfspeed, A Cree Company, announced that as of the end of 2015, it shipped GaN-on-SiC RF power transistors with a combined RF output power of more than 1.3 gigawatts. Wolfspeed achieved this milestone while maintaining a failure-in-time rate (FIT rate) of 5-per-billion device hours, illustrating the industry-leading reliability and performance of Wolfspeed’s GaN-on-SiC devices.... Read More

Controls & Controllers, Electrical Equipment & Systems, Electronic Components & Devices, Optics & Photonics, Sensors, Monitors & Transducers

Vishay Intertechnology to Showcase Latest Industry-Leading Technologies for Automotive and Other Applications at Electronica China 2016

March 8, 2016

MALVERN, Pa. – Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for electronica China 2016, taking place March 15-17 at the Shanghai New International Expo Centre. In booth 3502, Hall 3, the company will highlight industry-leading innovations — including passive components, diodes, power MOSFETs, and optoelectronics — that provide increased efficiency and... Read More

Electrical Equipment & Systems, Electronic Components & Devices, Sensors, Monitors & Transducers

Vishay Intertechnology Announces 'Super 12' Featured Products for 2016

March 2, 2016

Innovative Components Offer Industry-Leading Specifications for a Variety of Applications MALVERN, Pa. – Vishay Intertechnology, Inc. (NYSE: VSH) today announced its “Super 12” featured products for 2016. Each year, Vishay identifies a dozen key semiconductor and passive components featuring new and improved technologies that can significantly improve the performance of end products... Read More

Electronic Components & Devices

Wolfspeed to Present and Exhibit at GOMACTech 2016

March 2, 2016

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting and presenting at the 2016 Government Microcircuit Applications and Critical Technology Conference (GOMACTech), the premier annual event dedicated to government-funded micro- and... Read More

Communication Systems & Equipment, Electronic Components & Devices

High Linearity Mixer enables design flexibility.

February 29, 2016

Featuring integrated local oscillator buffer with bypass mode, UltraCMOS® PE4152 is suited for land-mobile-radio, tactical radio, and cellular infrastructure applications. Quad MOSFET mixer operates from 100&ndash;1,000 MHz (RF) and 200&ndash;900 MHz (LO). When using LO buffer, linearity is 25 dBm IIP3 and isolation is 30/30 dB LO-RF/IF. In LO bypass mode, linearity is 24 dBm IIP3, and isolation is 60/58 dB LO-RF/IF. Conversion loss is less than 6.6 dB in either LO mode. Read More

Electronic Components & Devices

Future Electronics Promotes Fairchild's Dual Cool MOSFET Packaging Technology

February 10, 2016

Pointe Claire, Quebec - Future Electronics, a global leading distributor of electronic components, recently announced immediate availability of Fairchild's Dual Cool™ MOSFET packaging technology. Fairchild's Dual Cool™ MOSFET packaging technology provides both bottom- and top-side cooling in the industry standard PQFN package, offering performance flexibility for designers. With... Read More

Electronic Components & Devices

Future Electronics Promotes the 600 V E Series MOSFETs from Vishay

February 10, 2016

Pointe Claire, Quebec - Future Electronics, a global leading distributor of electronic components, recently announced immediate availability of Vishay's 600 V E Series MOSFETs in PowerPAK® 8 x 8. Vishay's 600 V E Series features Kelvin connections to reduce gate drive inductance. The construction of the PowerPAK 8 x 8 package allows one of the source pins to be arranged as a... Read More

Electrical Equipment & Systems, Electronic Components & Devices, Transportation Industry Products

Vishay Intertechnology at APEC 2016 March 20-24 Long Beach, California Booth 2017

February 9, 2016

At APEC 2016, Vishay Intertechnology will be highlighting its latest industry-leading power MOSFET, IC, passive component, and diode technologies for a wide range of applications. New Products on Display at APEC 2016 600 V E Series Power MOSFET Saves Space and Increases Efficiency Offered in the compact, fully RoHS-compliant PowerPAK® 8x8 package — 57 % smaller than the TO-263... Read More

Electronic Components & Devices

Wolfspeed Powers Gruppo PBM Battery Chargers Enabling Faster Charge While Consuming Less Energy

February 8, 2016

Wolfspeed SiC MOSFETs provide innovative power solutions for industrial battery chargers, enabling a 40 percent reduction in size and a 20 percent reduction in system cost Durham, N.C. - Wolfspeed, A Cree Company, announced today that Gruppo PBM, a leader in industrial battery chargers, is using Wolfspeed™ SiC MOSFETs in its new HF9 battery charger family to enable higher efficiency and... Read More

Electrical Equipment & Systems, Electronic Components & Devices, Optics & Photonics, Sensors, Monitors & Transducers, Green & Clean

Vishay Intertechnology Announces Technology Lineup for ELECRAMA-2016

February 8, 2016

Industry-Leading Passive and Semiconductor Components Deliver High Performance for High-Voltage, Solar Energy, Smart Grid, Wind Turbine, and Traction Applications MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for ELECRAMA-2016, taking place Feb. 13-17 at the Bangalore International Exhibition Center in India. In hall 3B, booth H3M5, the... Read More