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Electronic Components & Devices -> Electronic Components -> Transistors


Transistors




(Showing headlines 1 - 20)   more ....

Power Conversion Driver/MOSFET works with high-performance FPGAs.

Altera Corp.    San Jose, CA 95134
Apr 15, 2014 Model ET4040 monolithic 40A driver plus synchronous MOSFET powertrain enables design of point-of-load power solutions. It provides continuous output current over -40 to + 85°C temperature range and input from 4.5-14 V. On-board monolithic current sense maximizes reliability and thermal performance. Powering FPGA core supply rails in single- or multi-phase configurations, unit also suits VDDQ supply rails for DDR3, DDR4, and QDR memories and supplies ASIC and ASSPs in servers and communications systems.

Dual N-Channel Power MOSFET features low on-resistance.

Dual N-Channel Power MOSFET features low on-resistance.

Vishay    Malvern, PA 19355
Mar 31, 2014 Integrating 2 MOSFETs into one PowerPAK® SC-70 package with 2 x 2 mm footprint, halogen-free and RoHS-compliant SiA936EDJ helps conserve PCB space, simplify designs, and increase power efficiency in portable electronics. This dual n-channel TrenchFET® power MOSFET offers low on-resistance for 20 V (12 and 8 V VGS) devices at 4.5 and 2.5 V gate drives. On-resistance is 34 mΩ (4.5 V), 37 mΩ (3.7 V), and 45 mΩ (2.5 V), and built-in ESD protection is rated at 2,000 V.

Power MOSFET serve high-current motor control and power designs.

Texas Instruments, Inc., Semiconductors    Dallas, TX 75243
Mar 31, 2014 Supporting 40–100 V input, NexFETs™ include 14 power MOSFETs in TO-220 and lead (Pb)-free 5 x 6 mm SON packages. These 40, 60, 80, and 100 V N-channel devices, suited for high-current motor control and power applications, come in plastic packages with avalanche capability to support high-stress motor control applications. While CSD19506 supports 2.0 mΩ of Rds(on) at up to 80 V input, CSD19536 achieves 2.3 mΩ of Rds(on) at 100 V input.

Super Junction MOSFETs delivers high-speed switching.

Toshiba America Electronic Components (TAEC)    Irvine, CA 92618-1811
Mar 27, 2014 Supplied in TO-247 package, models TK31N60X, TK39N60X, and TK62N60X of DTMOS IV-H series use single epitaxial process and achieve high speed switching performance while maintaining low ON-resistance level (0.088, 0.065, and 0.040 max RDS(ON)) – all without loss of power. This is accomplished via reduction of parasitic capacitance between Gate and Drain, which also promotes power efficiency. Max VDSS value is 600 V for all models, and respective max ID values are 30.8, 38.8, and 61.8 A.

JEDEC-Qualified GaN-on-Silicon HEMTs carry 600 V rating.

JEDEC-Qualified GaN-on-Silicon HEMTs carry 600 V rating.

Transphorm Inc    Goleta, CA 93117
Mar 26, 2014 Low-profile, 600 V GaN-based HEMTs (high electron mobility transistors) utilize EZ-GaN™ technology. Supplied in PQFN88 packages, TPH3002LD and TPH3002LS feature 290 mΩ RDS(on), 29 nC Qrr, and low inductance for high-frequency switching capability. They also feature kelvin connection to isolate gate circuit from high-current output circuit and reduce EMI. Supplied in TO220 package, TPH3002PD/TPH3002PS suit smaller, lower power applications such as adapters and all-in-one computer power supplies.

IGBT/MOSFET Driver suits high working voltage applications.

IGBT/MOSFET Driver suits high working voltage applications.

Vishay    Malvern, PA 19355
Mar 26, 2014 Featuring minimum 10 mm clearance and external creepage distance, Model VOW3120-X017T is suited for motor drives, alternative energy, welding equipment, and other high working voltage applications. Driver features typical common-mode noise-rejection values of 50 kV/µs and isolation ratings of VIORM = 1,414 V and VIOTM = 8,000 V. With current consumption of 2.5 mA, device boasts typical delays of less than 250 ns and rise and fall times of less than 100 ns.

High Electron Mobility Transistors are JEDEC-qualified.

Transphorm Inc    Goleta, CA 93117
Mar 25, 2014 Supplied in low-profile PQFN88 packages with patented EZ-GaN™ technology, TPH3002LD and TPH3002LS are 600 V GaN HEMTs featuring 290 mΩ RDS(on), 29 nC Q(rr), and low inductance for optimal high-frequency switching capability. LD devices also feature kelvin connection to isolate gate circuit from high-current output circuit to further minimize EMI. For smaller, lower power applications, TO220-packaged TPH3002PD and TPH3002PS also feature 290 mΩ RDS(on) and 29 nC Q(rr ).

Automotive Power MOSFETs offer RDS(on) down to 8.9 mOhm.

Automotive Power MOSFETs offer RDS(on) down to 8.9 mOhm.

Vishay    Malvern, PA 19355
Mar 06, 2014 With continuous drain currents to 50 A, 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L are optimized for injector boost applications in automotive engine control units. Model SQD50N10-8m9L in DPAK package provides on-resistance down to 8.9 mΩ at 10 V, while Models SQJ402EP and SQJ488EP, housed in 5 x 6 mm PowerPAK SO-8L package, offer values down to 11 mΩ and 21 mΩ at 10 V, respectively. All AEC-Q101-qualifed TrenchFET® power MOSFETs with ThunderFET® technology operate from -55 to +175°C.

Power MOSFETs  feature very low on-resistance.

Power MOSFETs feature very low on-resistance.

Advanced Power Electronics Corp    San Jose, CA 95118
Feb 27, 2014 Available in TO-263 and TO-220 packages, respectively, Models AP99T03GS-HF-3 and AP99T03GP-HF-3 feature low on-resistance of 2.5 mΩ, drain-source breakdown voltage of 30 V, and continuous drain current of 120 A. Model AP99T03GS-HF-3 is suited for commercial and industrial surface-mount applications, while Model AP99T03GP-HF-3 is intended for applications where small PCB footprint or attached heatsink is required. Both N-channel MOSFETs are halogen-free and RoHS-compliant.

Half-Bridge Gate Driver IC features programmable dead time.

Half-Bridge Gate Driver IC features programmable dead time.

IXYS Integrated Circuits Division    Aliso Viejo, CA 92656
Jan 24, 2014 Available in 14-pin SOIC and 14-lead DIP packages, IX21844 can drive – in half-bridge, full-bridge, and 3-phase configurations – discrete power MOSFETs and IGBTs that operate up to 600 V. Both high and low side outputs feature integrated power DMOS transistors, each capable of sourcing 1.4 A and sinking 1.8 A gate drive current. Absolute maximum rating of 700 V provides additional margin for high-voltage applications. Programmable dead time can be set between 400 nsec and 5 µsec.

Off-Line PWM Controllers integrate power MOSFET.

Off-Line PWM Controllers integrate power MOSFET.

Allegro Microsystems, Inc.    Worcester, MA 01615
Jan 23, 2014 Available in DIP-8 and SOIC-8 packages, STR4A100 series incorporates sense MOSFET and current mode PWM controller IC. Products use secondary side regulation topology and make it possible to lower stand-by power to <10 mW. Low standby power is accomplished by automatic switching between PWM operation in normal operation and burst-oscillation under light load conditions. Suitable areas of use include appliance, office automation, consumer, and industrial markets.

Asymmetric Dual N-Channel MOSFET features low on-resistance.

Asymmetric Dual N-Channel MOSFET features low on-resistance.

Vishay    Malvern, PA 19355
Jan 17, 2014 Housed in 3 x 3 mm PowerPAIR® package utilizing TrenchFET Gen IV technology, 30 V Siliconix SiZ340DT is optimized for synchronous buck designs in cloud computing infrastructures, servers, telecommunication equipment, and client-side electronic devices. Low-side Channel 2 MOSFET of SiZ340DT offers low on-resistance of 5.1 mΩ at 10 V gate drive and 7.0 mΩ at 4.5 V, while high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V.

P-Channel MOSFET increases efficiency in mobile computing devices.

P-Channel MOSFET increases efficiency in mobile computing devices.

Vishay    Malvern, PA 19355
Jan 09, 2014 Supplied in 6.15 x 5.15 mm PowerPAK® SO-8 package, -20 V Si7157DP TrenchFET® p-channel Gen III power MOSFET offers respective on-resistance of 0.0016 and 0.0020 Ω at -10 and -4.5 V. On-resistance values enable designers to achieve lower voltage drops and conduction losses in circuits, promoting efficient use of power and consequently extending battery run times. RoHS-compliant product is optimized for load and battery switches in power management applications for notebook computers.

Dual N-Channel Power MOSFETs suit automotive applications.

Dual N-Channel Power MOSFETs suit automotive applications.

Vishay    Malvern, PA 19355
Dec 13, 2013 Supplied in 5 x 6 mm asymmetric PowerPAK® SO-8L package, 40 V Siliconix SQJ940EP and SQJ942EP combine both high- and low-side MOSFETs required for synchronous DC/DC buck converters. At 10 V, Model SQJ940EP offers max on-resistance of 6.4 mΩ for Channel 2 low-side MOSFET and 16 mΩ for Channel 1 high-side MOSFET, while Model SQJ942EP offers max on-resistance of 11 mΩ for low-side MOSFET and 22 mΩ for high-side MOSFET. Both TrenchFET® devices are AEC-Q101-qualified and operate up to +175°C.

Power MOSFETs suit DC-DC converter applications.

Power MOSFETs suit DC-DC converter applications.

Advanced Power Electronics Corp    San Jose, CA 95118
Dec 12, 2013 Available in 3 models, AP4034 Series N-Channel MOSFETs feature low typical gate charge of 15 nC. Model AP4034GMT-HF-3, housed in PMPAK5x6 package, offers max on-resistance of 8 mΩ and drain-source current rating of 44.3 A. Supplied in standard SO-8 package, Model AP4034GM-HF-3 offers max on-resistance of 9 mΩ and drain-source current of 13 A. Model AP4034GYT-HF-3 has same low max on-resistance of 9 mΩ, but with drain-source current of 15.5 A in 3 x 3 mm footprint.

Power MOSFET features max on-resistance of 0.99 milliohm.

Power MOSFET features max on-resistance of 0.99 milliohm.

Advanced Power Electronics Corp    San Jose, CA 95118
Dec 10, 2013 Provided in PMPAK5x6 package with integrated thermal pad and standard SO-8 footprint compatible with other enhanced 5 x 6 mm power packages, AP1A003GMT-HF-3 is intended for use in high-current load switching where low voltage drop across MOSFET switch is required to minimize conduction losses. This RoHS-compliant and BFR-/halogen-free product features breakdown voltage rating of 30 V and max drain-source current rating of 260 A.

P-Channel Gen III Power MOSFET measures 2.4 x 2.0 x 0.4 mm.

P-Channel Gen III Power MOSFET measures 2.4 x 2.0 x 0.4 mm.

Vishay    Malvern, PA 19355
Dec 05, 2013 Supplied in 30-pin CSP MICRO FOOT® package with 0.4 mm profile, Si8851EDB increases efficiency while conserving space in mobile computing devices. This -20 V TrenchFET® p-channel Gen III power MOSFET offers on-resistance of 8.0 and 11.0 mΩ at respective gate drive of -4.5 and -2.5 V. Optimized for load and battery switches in power management applications for tablets, smartphones, and notebooks, halogen-free and RoHS-compliant device also provides 6 kV typ ESD protection.

P-Channel MOSFETs offer industry-low RDS(on).

P-Channel MOSFETs offer industry-low RDS(on).

Vishay    Malvern, PA 19355
Nov 21, 2013 In applications where saving PCB space is critical, -12 V Model Si5411EDU offers low on-resistance of 8.2 mΩ (-4.5 V) and 11.7 mΩ (-2.5 V) in 3.0 x 1.9 mm PowerPAK ChipFET package. When higher voltage rating is needed, -20 V Model Si5415AEDU features values of 9.6 mΩ (-4.5 V) and 13.2 mΩ (-2.5 V). Both provide 5,000 V ESD protection. Model SiSS23DN, housed in 3.3 x 3.3 mm PowerPAK 1212-8S package, provides 4.5 mΩ (-4.5 V) and 6.3 mΩ (-2.5 V) for applications requiring low on-resistance.

N- and P-Channel MOSFETs feature on-resistance below 100 mohm.

Texas Instruments, Inc. (TI)    Dallas, TX 75243-4136
Nov 13, 2013 Suited for space-constrained handheld applications, N- and P-channel FemtoFET™ MOSFETs come in 0.6 x 1.0 x 0.35 mm LGA package and offer ESD protection >4,000 V human body model. Continuous drain current values are available from 1.5–3.1 A (N-channel) and -2.5 to -1.6 (P-channel). Typ rdson ranges are 130-370 mΩ (1.8 V), 110-240 mΩ (2.5 V), and 90-200 mΩ (4.5 V) for N-channel MOSFETs and 395-580 mΩ (1.8 V), 145-338 mΩ (2.5 V), and 90-210 mΩ (4.5 V) for P-channel MOSFETs.

SiC Power MOSFETs feature no tail current.

ROHM Semiconductor USA, LLC    San Diego, CA 92121
Sep 27, 2013 Rated at 80 mΩ and 1,200 V, Models SCT2080KE and SCH2080KE are intended for solar inverters, DC-DC converters, UPS, and motor drive applications. Absence of tail current and fast recovery characteristics lower switching losses, while 70–90 ns turn ON/OFF times allow for switching frequencies in hundreds of kHz range. Model SCH2080KE, co-packaged with discrete anti-parallel SiC Schottky Barrier Diode, features forward voltage 3 times smaller than that of body diode.




(Showing headlines 1 - 20)   more ....



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