Transistors

Electronic Components & Devices

Vishay Intertechnology at Electronica 2016 Nov. 8-11 Munich, Germany Hall A5 Booth 141-142, Hall A6 Booth A11-A13

September 23, 2016

At electronica 2016, Vishay Intertechnology will be highlighting its latest industry-leading passive component, power MOSFET, IC, diode, and optoelectronics technologies for a wide range of applications. New Products on Display at electronica 2016 vPolyTan™ Multi-Anode Solid Tantalum Chip Capacitors Increase Volumetric Efficiency to Lower Component Counts Combining polymer tantalum... Read More

Electronic Components & Devices

Vishay Intertechnology at Electronica 2016 Nov. 8-11 Munich, Germany Hall A5 Booth 141-142, Hall A6 Booth A11-A13

September 20, 2016

New Products on Display at electronica 2016 vPolyTan™ Multi-Anode Solid Tantalum Chip Capacitors Increase Volumetric Efficiency to Lower Component Counts Combining polymer tantalum technology with Vishay's patented multi-array packaging (MAP), the T59 series offers up to 25 % better volumetric efficiency than similar devices, which allows for the industry's highest capacitance... Read More

Electronic Components & Devices

Richardson RFPD, Inc. LDMOS transistor designed to decrease amplifier size and BOM.

September 12, 2016

Offering an output of 1500 W CW at 50 V, MRF1K50H eliminates the need for large number of transistors in high-power RF amplifiers. Suitable for applications ranging from laser and plasma sources to particle accelerators, unit operates upto 500 MHz. Product has high drain-source avalanche energy absorption capability and a wide frequency range for input and output, and is adaptable for singled-ended use or push-pull configuration. Device is ESD protected for improved Class C operation. Read More

Electronic Components & Devices

N-Channel Power MOSFET targets automotive applications.

September 9, 2016

Fabricated using U-MOS-VIII-H process node, AEC-Q101 qualified TK160F10N1L (100 V, 160 A) keeps current balances in parallel operation in automotive applications. TO-220SM(W) package incorporates copper connector technology for optimal current handling and thermal as well as minimal package resistance, and design promotes reliability by eliminating bond wires. Characteristics include max RDS(ON) of 2.4 mΩ (@ VGS=10 V), low voltage drive (VGS=6 V), and gate threshold of 2.5–3.5 V. Read More

Electronic Components & Devices

New Yorker Electronics Now Showcasing New Line of 2016 Vishay Super 12 Power MOSFETs

August 22, 2016

Vishay Siliconix SiHH E-Series (SiHH26N60E, SiHH21N60E, SiHH14N60E, SiHH11N60E) Offers Space-Saving Alternatives to Conventional Solutions NORTHVALE, NEW JERSEY – New Yorker Electronics is now offering the Vishay 600V E Series power MOSFETs in the compact PowerPAK® 8x8 package. The construction of the PowerPAK® allows one of the source pins to be arranged as a dedicated Kelvin source... Read More

Electronic Components & Devices

High-Voltage MOSFETs enable efficient, high-speed switching.

August 19, 2016

Targeting switching voltage regulator designs, N-channel enhancement mode MOSFETs are based on pi-MOS VIII (Pi-MOS-8) planar semiconductor process. Max leakage current is 10 µA, and gate threshold voltage range is 2.5–4.0 V. While 2.5 A TK3A90E and 4.5 A TK5A90E feature VDSS ratings of 900 V and respective RDS(ON) ratings of 3.7 and 2.5 Ω (typ), 4.0 A TK4A80E and 5.0A TK5A80E offer VDSS ratings of 800 V with typical RDS(ON) ratings of 2.8Ω and 1.9Ω, respectively. Read More

Electronic Components & Devices

N-Channel Power MOSFETs come in 5 x 6 mm package.

July 12, 2016

Housed in surface-mount PowerPAK® SO-8L package, 600 V Model SiHJ8N60E and 650 V Models SiHJ6N65E and SiHJ7N65E offer space-saving alternatives to MOSFETs in TO-252 package for lighting, industrial, telecom, computing, and consumer applications. Devices feature max on-resistance down to 0.52 Ω at 10 V and ultra-low gate charge down to 17 nC. Compared to leadless DFN packages, gullwing lead construction offers board-level reliability when subjected to temperature cycling over life of equipment. Read More

Electronic Components & Devices

N-Channel MOSFETs support synchronous buck applications.

June 24, 2016

To save space and power in synchronous buck converters used for automotive applications, 12 V Model SQJ202EP and 20 V Model SQJ200EP each combine high- and low-side MOSFET in 5 x 6 mm PowerPAK® SO-8L dual asymmetric package. AEC-Q101-qualified devices offer high temperature operation to +175°C. SQJ202EP is suited for applications with bus voltages ≤ 8 V and offers low max on-resistance down to 3.3 mΩ. For applications with higher bus voltages, SQJ200EP features max on-resistance of 3.7 mΩ. Read More

Electronic Components & Devices

N-Channel Power MOSFET maintains typical Rdson of 54 mOhm.

June 22, 2016

Offered in 1.53 x 0.77 mm silicon-based package, 60 V Model CSD18541F5 maintains typical on-resistance of 54 mΩ at 10 V gate-to-source, and is designed to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. LGA package features 0.5 mm pitch between pads for easy mounting and is 80% smaller than traditional 60 V load switches. Integrated ESD protection diode safeguards MOSFET gate from over voltage. Read More

Electronic Components & Devices

More Winning Stories - June 2016

June 10, 2016

El Segundo, CA - Integra Technologies, Inc. proudly announces that it has started shipping a 25,000-unit order of GaN/SiC S-band transistors. About Integra Technologies, Inc: Integra Technologies is the premier designer and manufacturer of high-power RF transistors, pallets and amplifiers to the Avionics, Radar, Air Traffic Control, Wireless Communication and ISM (industrial, scientific,... Read More

Electronic Components & Devices

Establishing GaN/SiC Leadership - May 2016

June 10, 2016

San Francisco, CA - Integra Technologies, Inc., the world's largest independent designer and manufacturer of High-Power RF Transistors and Modules with the highest power and efficiency on the market, has solidified its commanding presence in the GaN/SiC Radar business, self-relying on its own world-class Wafer Fab and proprietary design process. During the IMS Exhibition, new GaN/SiC... Read More

Electronic Components & Devices

GaN Transistor (10 W) is designed for broadband applications.

June 6, 2016

Featuring GaN technology suited for broadband designs, IGN0160UM10 operates over 100–6,000 MHz range. Under CW (continuous wave) conditions, it supplies 10 W output power (min) at 3 GHz with >18 dB gain and 50% efficiency (typ) from 50 V supply voltage. Read More

Electronic Components & Devices

GaN Transistor (300 W) is designed for CW communications.

June 3, 2016

Under continuous wave (CW) conditions, IGN0912CW300 supplies 300 W min output power with >13.5 dB gain and 70% efficiency (typ) from 36 V supply voltage. Product operates over instantaneous bandwidth of 960–1,215 MHz. Read More

Electronic Components & Devices

GaN 1,200 W Transistor suits IFF avionics applications.

June 3, 2016

Pperating over instantaneous bandwidth of 1.03–1.09 GHz, IGN1011L1200 high-power GaN-on-SiC transistor delivers efficiency and output power level needed by IFF transponder designers and others. Under ELM Mode S (48 x (32µs on, 18µs off) 6.4%) pulsing conditions, unit supplies minimum of 1,200 W peak output power with typical >17 dB gain and 75% efficiency from 50 V supply voltage. Read More

Electrical Equipment & Systems, Electronic Components & Devices

Microsemi Showcases Leadership in Differentiated Products with Introduction of 15 New RF, Microwave and Millimeter Wave Devices at IMS 2016

May 26, 2016

New Product Exhibitions Featured in San Francisco, California May 22-27 ALISO VIEJO, Calif. - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it will feature 15 new products from its radio frequency (RF), millimeter wave integrated circuits (ICs), monolithic microwave integrated... Read More

Electrical Equipment & Systems, Electronic Components & Devices

DC/DC Power Modules (5 and 3 A) offer optimized density, efficacy.

May 25, 2016

Single-channel, pin-compatible ISL8205M (5 A) and ISL8202M (3 A), supplied in 4.5 x 7.5 x 1.85 mm, 22-lead QFN package, deliver up to 95% efficiency and provide POL conversions for FPGAs, DSPs, and MCUs. Design incorporates controller, MOSFETs, inductor, and passive components within encapsulated module to simplify system design. Supporting direct mounting on backside of PCB, these DC/DC step-down power modules support 2.6–5.5 V input and offer adjustable output down to 0.6 V.
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Electrical Equipment & Systems, Electronic Components & Devices

Universal PMIC supports low power FPGA and SoC processors.

May 20, 2016

Housed in 4 x 4 mm QFN package, Model XR77103 integrates 3 synchronous MOSFET power stages, offering power management solution for broad range of FPGAs, SoCs, DSPs, and video processors. I2C interface allows users to control output voltage from 0.8–6 V, switching frequency from 300 kHz to 2.2 MHz, power sequencing, and current limit. Model XR77103 operates from 4.5–14 V input supply, and all 3 outputs are designed for 2 A load current with peak current up to 3 A. Read More

Electronic Components & Devices

DMOS FET Arrays feature 1.5 A sink-output driver.

May 16, 2016

Respectively differing for their use of active high or low control logic, TBD62064A and TBD62308A series offer 4 channels of 50 V/1.5 A output. Four channels can also be paralleled to increase current driving capability. Manufactured using 130 nm BiCD process technology, products offer control inputs up to 25 V and feature 4 common cathode clamp diodes. Available packages include HSOP16, DIP16, and SSOP24. Read More

Electronic Components & Devices

IGBTs suit high power switching systems.

May 12, 2016

Utilizing proprietary Ultra Field Stop trench technology, Model NGTB40N120FL3WG has Ets of 2.7 mJ, while Model NGTB25N120FL3WG has Ets of 1.7 mJ. Both devices feature VCEsat of 1.7 V at their respective rated currents. Model NGTB40N120L3WG, optimized for low conduction losses, has VCEsat of 1.55 V, at rated current, with Ets of 3 mJ. All RoHS-compliant 1,200 V products are co-packaged with fast recovery diode that has soft turn-off characteristics and still offers minimal reverse recovery losses. Read More

Electronic Components & Devices

Fast Body Diode MOSFETs are rated for voltages to 650 V.

May 10, 2016

Increasing voltage headroom for soft switching in industrial, telecom, and renewable energy applications, models SiHx21N65EF (21 A), SiHx28N65EF (28 A), and SiHG33N65EF (33 A) offer respective on-resistance down to 157, 102, and 95 mΩ. Reverse recovery charge (Qrr) allows devices to block full breakdown voltage to help avoid failure from shoot-through and thermal overstress as well as increase reliability in zero voltage switching (ZVS)/soft switching topologies. Read More