Electronic Components & Devices

PowerPAK 20 V MOSFET enhances reliability of portable electronics.

February 19, 2015

Supplied in 2 x 2 mm footprint PowerPAK® SC-70 package, SiA466EDJ increases power density and reliability for portable electronics. This 20 V n-channel TrenchFET® power MOSFET, with VGS rating of ±20 V, offers 25 A continuous drain current and 2,500 V ESD protection. On-resistance of 9.5 mΩ (10 V), 11.1 mΩ (6 V), and 13.0 mΩ (4.5 V) reduces conduction losses, and 6.3 nC typical gate charge and 0.9 Ω gate resistance minimize switching losses. Read More

Electronic Components & Devices

Depletion-Mode MOSFETs utilize vertical DMOS process.

February 11, 2015

Offered in SOT-89/-223/-23 packages, CPC39xx N-channel depletion-mode MOSFETs are available with voltage ratings that range from 60–800 V. These normally on (NO) FETs, with max Gate-to-Source threshold voltages from -2.9 to -3.9 V, can conduct current without any gate voltage. Applications include voltage pre-regulator circuits, cold start voltage feed, current sources, constant current loads, LED drive circuits, NO switches, ignition modules, converters, and power supplies. Read More

Electrical Equipment & Systems, Electronic Components & Devices

High-Voltage MOSFETs suit SMPS applications.

January 23, 2015

Built on second-generation Super Junction Technology, 500 V Series of High-Voltage MOSFETs are optimized for operation in switch mode power supplies to 500 W. Devices range from 12–20 A with low on-resistance from 190–380 mΩ and ultra-low gate charge of 22–45 nC. Designed to withstand high energy pulse in avalanche and commutation modes, RoHS-compliant devices meet stringent 80 PLUS efficiency standards required for consumer products, lighting applications, and ATX/silver box PC SMPS. Read More

Electronic Components & Devices

N-Channel Power MOSFETs achieve low resistance.

January 22, 2015

Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V. Read More

Electronic Components & Devices

Trench PT/FS IGBT Platform reduces conduction, switching losses.

December 11, 2014

Supplied as bare die, Trench IGBT platform includes Punch Through (PT) and Field Stop (FS) technologies and increases efficiency in motor drives, UPSs, solar inverters, and welding machine inverters. Collector-to-emitter voltages, as well as fast and soft turn-on and turn-off, allow low conduction and switching losses while providing breakdown voltages to 650 V for increased reliability. Collector current ratings range from 30–240 A, and available breakdown voltages are 600 and 650 V. Read More

Electronic Components & Devices

N-Channel MOSFETs suit soft switching topologies.

December 8, 2014

Built on Super Junction Technology, 600 V Models SiHx28N60EF and SiHx33N60EF are suited for zero voltage switching/soft switching topologies such as phase-shift bridges and LLC converter half bridges. Minimized reverse recovery charge allows devices to regain ability to block full breakdown voltage quickly, helping to avoid failure from shoot-through and thermal overstress. Offered in 4 packages, 28 A SiHx28N60EF and 33 A SiHx33N60EF feature low on-resistance of 123 Ω and 98 Ω, respectively. Read More

Electronic Components & Devices

IGBT Power Modules control lines rated to 1,700 V-450 A.

November 24, 2014

Intended for motor control and inverter applications, IGBT Power Modules are available in half-bridge, 6-pack, and PIM module designs (standard and custom) in S, D, H, W, and WB packages with ratings up to 1,700 V and 450 A. Rugged semiconductor products, combining speed and efficiency in flexible format, offer short circuit capability and free-wheeling diodes. Positive temperature coefficient devices can be paralleled easily to increase current handling capability. Read More

Electronic Components & Devices

High-Power GaN HEMTs serve C-Band applications.

November 11, 2014

Rated for 200 W continuous wave (CW) and 4.4–5.0 GHz operation, CGHV50200F gallium nitride (GaN) high electron mobility transistor (HEMT) suits tropospheric scatter (troposcatter) communications applications. These 50 Ω, internally matched units, which exhibit 180 W typ PSAT, 11.5 dB typ power gain, and 48% typ power efficiency, allow solid-state power amplifiers (SSPAs) to replace traveling wave tube (TWT) amplifiers in satellite broadcasting systems. Read More

Electronic Components & Devices

Dual Power MOSFET optimizes efficiency in DC/DC applications.

November 7, 2014

Supplied in 6 x 6 mm PQFN package for backside mounting, International Rectifier's IRFHE4250D uses 25 V FastIRFET™ silicon technology for optimal switching performance and features exposed top that maximizes thermal transfer. Features include 60 A Power Block, (<0.75 mm) package profile, low charge control MOSFET (13 nC typ), low RDS(ON) synchronous MOSFET (<1.35 mΩ), and intrinsic Schottky diode. RoHS-compliant, halogen-free product targets 12 V input DC/DC synchronous buck applications. Read More

Electronic Components & Devices, Green & Clean

IGBT Power Modules serve solar inverter and UPS applications.

October 16, 2014

For 3-level neutral point clamp (NPC) topologies, VS-ENQ030L120S provides collector-to-emitter breakdown voltage of 1,200 V and collector current rating of 30 A. For 3-level inverter stages, VS-ETF075Y60U and VS-ETF150Y65U respectively offer choice of 75 and 150 A collector current ratings and 600 and 650 V collector-to-emitter breakdown voltages and perform up to +175 °C. For double boost converters, 15 A VS-ETL015Y120H features collector-to-emitter breakdown voltage of 1,200 V. Read More

Electronic Components & Devices

GaN HEMT Die operates up to 6 GHz.

October 8, 2014

Exhibiting 17 dB typical small signal gain at 6 GHz and 18 dB typical small signal gain at 4 GHz, in addition to 65% typical power added efficiency, 40 W Model CGHV60040D and 170 W Model CGHV60170D are designed for use in Class AB linear amplifiers suitable for linear, pulsed, and CW applications. Both 0.4 µm, 50 V devices are supplied in Gel-Pak® Vacuum Release™ trays that immobilize components to ensure damage-free transportation and storage. Read More

Electronic Components & Devices

Chipscale Power MOSFET reduces power draw in ultraportables.

October 3, 2014

Used as battery switch and load switch in power management applications for smartphones, tablets, wearable devices, and high-end notebooks, MICRO FOOT® p-channel Si8457DB occupies 1.6 x 1.6 mm footprint and features on-resistance of 19 mΩ at -4.5 V, 23.4 mΩ at -2.5 V, and 35 mΩ at -1.8 V. On-resistance values mean minimal voltage drop at DC and pulse peak currents, resulting in less power wasted as heat. Also, ±8 V VGS rating promotes safety in lithium ion battery-powered applications. Read More

Electrical Equipment & Systems, Electronic Components & Devices, Green & Clean

MOSFETs (500 V) offer low conduction and switching losses.

September 26, 2014

Built on second-generation Super Junction Technology, Vishay Siliconix SiHx25N50E MOSFETs comprise 25 A, RoHS-compliant devices that offer gate charge of 57 nC and 145 mΩ on-resistance. These values promote energy conservation in high-power, high-performance consumer products, lighting applications, and ATX/silver box PC SMPSs. Package options include TO-220, TO-247AC, and thin leaded TO-220 FULLPAK. Products withstand high energy pulses in avalanche and commutation modes.
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Electronic Components & Devices

RF Power Transistors suit radar pulsed applications.

September 2, 2014

Consisting of gold-metalized unmatched GaN on Silicon Carbide, Models MAGX-000035-015000 and MAGX-000035-01500S deliver 17 W of peak output power with 15.5 dB of power gain and 63% drain efficiency. Devices provide 50 V operation over frequency range of DC–3.5 GHz. Offered in both enhanced flanged and flangeless ceramic package, transistors have MTTF of 600 years and are suitable for civilian and military radar pulsed applications. Read More

Electronic Components & Devices

HEMT Power Transistor suits L-Band pulsed radar applications.

August 8, 2014

Operating from 1,200–1,400 MHz, Model MAGX-001214-650L00 guarantees 650 W of peak power with typical 19.5 dB of gain and 60% efficiency. Gold-metalized, pre-matched GaN on Silicon Carbide transistor features very high breakdown voltages, which allow stable operation at 50 V under extreme load mismatch conditions. Assembled in ceramic flange package, transistor provides rugged performance in demanding radar applications. Read More

Electronic Components & Devices

MOSFET Transistors operate below and above -60 to +230°C range.

July 8, 2014

Mid-power P-channel transistors XTR2N0325 and XTR2N0350 are intended for max operation drain-source voltage of -30 V, while XTR2N0525 and XTR2N0550 can sustain drain-source voltages of up to -50 V. Respectively, on-state resistance ratings for small signal transistors XTR2N0307 (30 V P-channel MOSFET) and XTR2N0807 (80 V N-channel MOSFET) are 7 Ω and 9.1 Ω at 230┬░C, and continuous drain currents are 350 mA (900 mA peak) and 200 mA (450 mA peak). Read More

Electronic Components & Devices

Normally-Off 100V GaN Transistors come in low-inductance package.

May 30, 2014

Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature┬áreverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge. RoHS-compliant, near chipscale, embedded GaNPX package minimizes inductance and optimizes thermal performance. Read More

Electronic Components & Devices

Normally-Off 650 V GaN Transistors aid high-speed system design.

May 30, 2014

Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that optimizes thermal performance as well as eliminates wire bonds and thereby minimizes inductance. Read More

Electronic Components & Devices

N-Channel Power MOSFETs minimize losses.

May 30, 2014

Rated at 25 V and available with or without integrated Schottky diode, Series NTMFS4Hxxx and NTTFS4Hxxx MOSFETs are suited for server and telecom switching applications, high power density DC-DC converters, and to support synchronous rectification in point-of-load modules. RDSon performance of 0.7 mΩ and low input capacitance of 3780 pF ensure conduction, switching, and driver losses are minimized. Read More

Electronic Components & Devices

SiC MOSFETs suit high-voltage industrial applications.

May 29, 2014

Designed for high-power industrial applications where efficiency is critical, 1,200 V Silicon Carbide MOSFETs are suited for solar inverters, electric vehicles, welding, and medical devices. Units are rated at 80 mΩ and 50 mΩ and provide development flexibility by offering both industry standard TO-247 and SOT-227 packages. In addition to optimized short circuit withstand, devices feature ultra-low gate resistance for minimizing switching energy loss. Read More