Transistors

Welding Equipment & Supplies, Electrical Equipment & Systems, Electronic Components & Devices

IGBT Power Modules target TIG welding machines.

January 21, 2016

Built on proprietary Trench PT IGBT technology, half-bridge Models VS-GP100TS60SFPbF, VS-GP300TD60S, and VS-GP400TD60S and single-switch Model VS-GP250SA60S provide extremely low collector-to-emitter voltages down to 1.10 V and turn-off switching energy down to 11 mJ for output inverter stages. RoHS-compliant modules feature operating frequencies to 1 kHz and continuous collector current from 100–400 A. Mounting directly to heatsinks, devices offer low EMI to minimize snubbing requirements. Read More

Electronic Components & Devices

Power Stages target notebooks, ultrabooks, and desktops.

January 18, 2016

Intended for multiphase POL regulator applications, VRPower® DrMOS Power Stages combine power MOSFETs, advanced MOSFET gate driver IC, and bootstrap Schottky diode. Models SiC530CD, SiC531CD, SiC532CD come in 4.5 x 3.5 mm PowerPAK® MLP4535-22L package with continuous current up to 30 A, while Models SiC631CD and SiC632CD come in 5 x 5 mm PowerPAK MLP55-31L package offering continuous current up to 40 A. Devices lower package parasitics to enable switching frequencies up to 2 MHz. Read More

Electronic Components & Devices

Plastic GaN HEMTs support LTE and radar applications.

October 19, 2015

Supplied in 4.5 x 6.5 mm plastic SMT packages, Models CGHV27060MP and CGHV35060MP are 50 V/60 W broadband GaN HEMTs fabricated on SiC substrate with 0.4 µm process. Model CGHV27060MP, supporting frequencies from UHF through 2.7 GHz, provides 16.5 dB gain, 70% drain efficiency, and 80 W output power at pulsed PSAT with 100 µs pulse width and 10% duty cycle. Model CGHV35060MP operates from 2.7–3.5 GHz. Tested at 3.3 GHz, device exhibits 14.5 dB gain with 67% drain efficiency. Read More

Electronic Components & Devices, Electrical Equipment & Systems

Surface Mount Power MOSFETs feature Kelvin connections.

October 9, 2015

Supplied in surface mount PowerPAK® 8 x 8 package, 600 V Models SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E feature large drain terminal for low thermal resistance and Kelvin source connection that can increase efficiency by optimizing gate drive signal. Devices offer low on-resistance down to 0.135 Ω at 10 V and ultra-low gate charge down to 31 nC. RoHS-compliant and halogen-free, MOSFETs are suited for telecom, server, computing, lighting, and industrial applications. Read More

Electronic Components & Devices, Electrical Equipment & Systems

Integrated Power Module outputs 75-229 KW.

June 30, 2015

Operating on DC bus voltages from 400–800 Vdc and switching frequencies up to 20 kHz, Powerex Integrated Power Module can be mounted on various heatsinks, including both forced air and liquid cooled options, dependent upon application requirements. Unit is compatible with NX-Series of Mitsubishi IGBT devices and is suited for energy storage, uninterruptable power supplies, motor drives, solar, wind, photovoltaics, EV and hybrid electric vehicle applications. Read More

Electronic Components & Devices

Low-Resistance GaN Transistor reduces losses with step function.

June 26, 2015

Offered in power conversion switch, 650 V blocking voltage transistor is based on design for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). This 650 V, 50 A GaN transistor achieves 12 Ω Rdson and accelerates extension of GaN-based technology from communications subsystems into power conversion subsystems. Read More

Electronic Components & Devices

N-Channel MOSFET saves space in mobile devices.

June 22, 2015

Housed in chipscale MICRO FOOT® 0.8 x 0.8 mm package with 0.357 mm profile, TrenchFET® 20 V Model Si8824EDB extends battery usage and saves space in smartphones, tablets, wearable devices, solid-state drives, and portable medical devices. Unit features extremely low on-resistance of 75 mΩ at 4.5 V, 82 mΩ at 2.5 V, 90 mΩ at 1.8 V, 125 mΩ at 1.5 V, and 175 mΩ at 1.2 V. To prevent static damage from handling or human body contact, MOSFET has 2,000 V integrated ESD protection. Read More

Electronic Components & Devices

N-Channel Power MOSFETs target automotive applications.

June 16, 2015

Featuring chip that uses U-MOSVIII-H process in TO-220SM(W) package, Models TK160F10N1 and TK200F04N1L are 100 V/160 A and 40 V/200A MOSFETs, respectively. Devices achieve low on-resistance characteristics of RDS(ON) = 0.78 m (typical) at V(GS) = 10 V for TK200F04N1L and RDS(ON) = 2.0m (typical) at V(GS) = 10 V for TK160F10N1. With low thermal resistance of R(th(ch-c))=0.4°C/W max, both MOSFETs are suited for electric power steering, DC-DC converters, motor drivers, and load switches. Read More

Electronic Components & Devices

SiC MOSFET minimizes equipment size and power consumption.

June 9, 2015

Adopting trench structure, SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) offers ON resistance that decreases power loss in equipment ranging from industrial inverters and power supplies to power conditioners for solar power systems. Full SiC power module (1,200 V/180 A), incorporating trench-type SiC MOSFETs in a 2-in-1 circuit with integrated SiC SBDs, is also available. Read More

Electronic Components & Devices, Electrical Equipment & Systems

IGBT/MOSFET Driver saves space in compact inverters.

June 1, 2015

With 2.5 mm height and minimum 8 mm clearance, Model VOL3120 is suited for motor drives, alternative energy, welding equipment, and other high-working-voltage applications. Device provides high isolation voltage ratings of VIORM = 1,050 V and VIOTM = 8,000 V. Operating from 15–32 V with current consumption of 2.5 mA, driver boasts typical delays of <250 ns and rise/fall times of 100 ns. Common mode transient immunity of more than 48 kV/µs eliminates noise issues from low-voltage areas on PCB. Read More

Electrical Equipment & Systems, Electronic Components & Devices

N-Channel MOSFETs save energy in soft switching topologies.

May 26, 2015

Built on superjunction technology, 600 Volt EF Series is suited for zero voltage switching/soft switching topologies such as phase-shifted bridges and LLC converter half bridges. Fast body diode N-channel power MOSFETs include 21 A Model SiHx21N60EF, 47 A Model SiHx47N60EF, and 70 A Model SiHx70N60EF with ultra-low on-resistance of 176 mΩ, 65 mΩ, and 38 mΩ, respectively. Low reverse recovery charge helps to avoid failure from shoot-through and thermal overstress. Read More

Electronic Components & Devices, Electrical Equipment & Systems

GaN Power Transistor offers current capability up to 60 A.

May 22, 2015

Based on FOM Island Technology® die design, GS66516T 650 V E-Mode Power Switch features topside cooling configuration, which allows it to be cooled using conventional heat sink or fan cooling. Device includes reverse current capability, integral source sense, and zero reverse recovery loss. Housed in 9.0 x 7.6 x 0.45 mm GaNPX™ packaging, transistor is suited for on-board battery chargers, 400 V DC-DC conversion, inverters, UPS and VFD motor drives, and AC-DC power supplies. Read More

Electronic Components & Devices, Electrical Equipment & Systems

N-Channel 40/60 V MOSFETs reduce losses to increase efficiency.

May 22, 2015

Breakdown voltage is 40 V for NTMFS5C404NLT, NTMFS5C410NLT, and NTMFS5C442NLT, which respectively have max RDS(on) values of 0.74, 0.9, and 2.8 mΩ and continuous drain current ratings of 352, 315, and 127 A. Breakdown voltage rating is 60 V for NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL, which feature respective max RDS(on) values of 1.2, 1.5, and 4.7 mΩ and continuous drain currents of 287, 235, and 93 A. Gate capacitance, down to 2,164 pF, minimizes driver losses for all devices. Read More

Electronic Components & Devices

GaN HEMT Devices handle TWT radar system issues.

May 20, 2015

Offering pulsed saturated power performance greater than 400 W, Model CGHV59350 is used in ground-based defense and Doppler weather radar systems. C-Band device operates over 5.2–5.9 GHz bandwidth and exhibits 60% typ drain efficiency. Delivering 700 W of saturated RF pulsed power, Model CGHV31500F is suited for ATC radar systems. S-Band unit operates over 2.7–3.1GHz bandwidth and exhibits 12 dB power gain. Both 50 Ω, fully matched devices come in 0.7 x 0.9 in. ceramic/metal flange package. Read More

Electronic Components & Devices

SiC MOSFET targets high frequency power electronics.

May 19, 2015

Built on SiC planar technology, Model C3M0065090J is suited for renewable energy inverters, electric vehicle charging systems, and 3-phase industrial power supplies. Device is rated at 900 V/32 A with low on-resistance of 65 mΩ at 25°C. At higher temperature operation (TJ = 150°C), RDS(ON) is just 90 mΩ. In addition to industry-standard TO247-3 and TO220-3 packages, MOSFET is available in low-impedance D2Pak-7L surface mount package with Kelvin connection to help minimize gate ringing. Read More

Electronic Components & Devices

Broadband GaN HEMTs suit applications to 4 GHz.

April 22, 2015

Available in 2-leaded flange and pill packages, Model CGHV40050 operates from 50 V rail and delivers 50 W typ output power up to 4 GHz. Device provides 17.5 dB small signal gain at 1.8 GHz and 55% efficiency at PSAT. Rated for operating junction temperature of 225°C and case operating temperature spanning -40 to +80°C, transistor is suited for RF and microwave applications, including narrow band UHF applications, L- and S-Band applications, and multi-octave bandwidth amplifiers. Read More

Electronic Components & Devices

Compact Power MOSFET is designed for automotive applications.

April 1, 2015

Offering alternative to D²PAK and DPAK devices used in automotive applications, AEC-Q101-qualified SQJQ402E comes in 100% lead (Pb)-free, 8 x 8 x 1.8 mm PowerPAK® 8x8L package featuring gull-wing leads for mechanical stress relief. This 40 V TrenchFET® power MOSFET, operating to +175°C, features internal construction that minimizes inductance and enables max on-resistance of 1.5 mΩ at 10 V (1.8 mΩ at 4.5 V). Continuous drain current capability is rated up to 200 A. Read More

Electronic Components & Devices

GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.

March 27, 2015

Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency. Read More

Electronic Components & Devices

SIC MOSFETs achieve temperature rating of 200°C.

March 25, 2015

Utilizing high-voltage silicon carbide, STMicroelectronics' SCTx0N120 Series is suited for solar inverters, high-frequency power supplies, and power factor correctors as well as fully electric and hybrid electric vehicles. Model SCT30N120 is rated at 1,200 V and 100 mΩ, while Model SCT20N120 is rated 1,200 V and 290 mΩ. SiC Power MOSFETs are next step versus traditional silicon MOSFETs and IGBTs, for all applications in power conversion running at frequency ≥100 kHz. Read More

Electronic Components & Devices

Gallium Nitride Transistor (600 V) comes in TO-247 package.

March 25, 2015

Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V. Read More