SemiSouth Laboratories, Inc.    Starkville, MS 39759
May 25, 2012 Using depletion mode JFET SJDT170R1400, designers can achieve simplified and accelerated start-up without using any extra components, including heat sink. This 1,700 V/1,400 mohm silicon carbide (SiC) JFET, targeting 3-phase auxiliary power supplies, comes in 16 x 10 x 4.4 mm, SMD D2PAK-7L package with creepage distance of 6.85 mm that supports 1,700 V applications, simplifies PCB layout, and optimizes switching performance with its inductance value.

Toshiba America Electronic Components (TAEC)    Irvine, CA 92618-1811
May 23, 2012 TK100E06N1 (TO-220) and TK100A06N1 (TO-220SIS) 60 V devices have typical on-resistance ratings (@ V(GS) = 10V) of 1.9 and 2.2 m W, respectively. TK56E12N1 (TO-220) and TK56A12N1 (TO-220SIS) 120 V devices have typical on-resistances of 6.1 and 6.5 m W (@ V(GS) = 10V). Targeted at switch mode power supplies in applications such as AC/DC adapters, industrial systems, telecom equipment, and servers, high-speed trench MOSFETs are based on eighth generation U-MOS VIII-H process.

ON Semiconductor, LLC    Phoenix, AZ 85008
May 22, 2012 Intended for high-power inductive heating and inverter applications, 1,200 V-rated NGTB15N120, NGTB20N120, and NGTB25N120 are targeted for industrial motor control and consumer products. Deep trench technology as well as wafer thinning and processing techniques enable minimal turn-off losses while maintaining low ON state voltage during turn-on. Supplied in TO-247 package with low forward drop and soft-recovery fast rectifier, IGBTs are offered with 15, 20, and 25 A current ratings.

Microsemi    Irvine, CA 92614
May 22, 2012 Models APT40GR120B, APT40GR120S, and APT40GR120B2D30 minimize switching and conduction losses. Discrete non-punch through IGBTs are offered on standalone basis or can be packaged in combination with Microsemi's FRED or silicon carbide Schottky diodes. Short Circuit Withstand Time Rated for reliable operation, transistors provide hard switching operation greater than 80 kHz, optimizing power conversion efficiency in welding, solar inverter, and UPS applications.

ON Semiconductor    Phoenix, AZ 85008
May 18, 2012 Offering 15, 20, and 25 A current ratings, respectively, Models NGTB15N120, NGTB20N120, and NGTB25N120 utilize deep trench technology and wafer thinning techniques to enable low turn-off losses while maintaining low ON state voltage during turn-on. Housed in TO-247 package with 1,200 V rating, devices enable power conversion for wide range of demanding applications, including induction cook tops, rice cookers, and other small kitchen appliances.

SemiSouth Laboratories, Inc.    Starkville, MS 39759
May 17, 2012 Employing vertical trench JFET structures, Series SJDA065R055 features 0.055 W max RDS(on), positive temperature coefficient to facilitate paralleling, and fast switching with no tail current at 150°C. Voltage controlled silicon carbide devices, housed in TO-220 package, are suitable for solar inverters, SMPS, PFC circuits, induction heating, UPS, and motor drives.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
May 10, 2012 Featuring high-voltage stripe technology and currents from 3-36 A, D Series includes 400, 500, and 600 V MOSFETs with on-resistance down to 0.17, 0.13, and 0.34 W and gate charges down to 9, 6, and 45 nC, respectively. RoHS-compliant and halogen-free according to IEC 61249-2-21 definition, devices save energy in high-power switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, HID lighting, and induction heating.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
May 09, 2012 Rated at 30 V, TrenchFET® Gen IV Series demonstrates extremely low RDS(on) values down to 1.0 mW at 10 V and 1.35 mW at 4.5 V. Models SiRA00DP, SiRA02DP, and SiRA04DP are housed in 6.15 x 5.15 mm PowerPAK SO-8 package, while Model SiSA04DN comes in 3.30 x 3.30 mm PowerPAK 1212-8 package. All devices offer low Qgd/Qgs ratio of 0.5 or less. Applications include high power density DC/DC converters, synchronous rectification, and synchronous buck converters.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
May 02, 2012 Promoting efficiency and power density, D Series uses stripe design that lowers total gate charge while increasing switching speed and reducing on-resistance and input capacitance. These 400 V, 500 V, and 600 V devices respectively feature on-resistance down to 0.17, 0.13, and 0.34 ohm; gate charges down to 9, 6, and 45 nC; and gate charge times on-resistance values down to 7.65, 15.6, and 12.3 ohm-nC. RoHS-compliant MOSFETs feature simple gate-drive circuitry and rugged body diode.

ZMDI    Dresden 01109  Germany
Apr 09, 2012 Housed in 24-pin QFN package measuring 4 x 4 mm, Model ZSPM1000ZA1R operates as synchronous step-down converter in single-rail and single-phase configuration with extended operating temperature range of -40 to +125°C. Model ZSPM9010ZA1R DrMOS, housed in 40-pin PQFN package measuring 6 x 6 mm, is equipped with integrated power-stage driver and is optimized for use with ZSPM1000 digital-controller family for non-isolated POL supplies.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 14, 2012 MICRO FOOT® TrenchFET® Gen III power MOSFETs feature one billion transistor cells in each square inch of silicon and are intended for load, battery, and charger switching in handheld devices. While 1 x 1.5 x 0.59 mm Si8497DB offers low on-resistance of 53, 71, and 120 mW at 4.5, 2.5, and at 2.0 V, respectively, 1.6 x 1.6 x 0.6 mm Si8487DB offers on-resistance of 31, 35, and 45 mW at 10, 4.5, and 2.5 V, respectively. Both are halogen free and RoHS compliant.

SemiSouth Laboratories, Inc.    Starkville, MS 39759
Feb 10, 2012 Normally on (NO) silicon carbide (SiC) trench JFET, SJDP120R340, provides high-speed switching in micro inverters. Rated at 1,200 V with max on-state resistance of 340 mohm (typical RDS on of 270 mohm), device features positive temperature coefficient to facilitate paralleling as well as accelerated switching with no tail current at 150°C. Key applications include photovoltaic microinverters, SMPS and UPS, motor drives, and induction heating.

Powerex, Inc.    Youngwood, PA 15697
Jan 27, 2012 Split dual SiC MOSFET Modules QJD1210010 and QJD1210011 feature multiple circuit topologies, including independent, dual, in parallel, common collector, and common emitter. Designed for use in high-frequency applications, products are rated at 100 A/1,200 V, have -175°C junction temperature, and isolated baseplate of copper or AlSiC. Both modules include 2 MOSFET Silicon Carbide transistors, each with reverse-connected Zero Recovery® free-wheel silicon carbide Schottky diode.

Semicoa    Costa Mesa, CA 92626
Jan 17, 2012 Covering range of JAN, JANTX, JANTXV, and JANS level applications, power MOSFETs leverage proprietary architecture from N- and P-Channel topologies to address performance and supply constraints specific to defense/aerospace applications. Radiation hardened MOSFETs offer ranges from 30-500 V, meeting and exceeding 100K rad levels, and non-radiation hardened versions are also available within same voltage ranges. Both versions meet Defense Logistics Agency (DLA) slash sheet specifications.

Cree, Inc.    Durham, NC 27703
Dec 13, 2011 Supplied in bare die or chip form for use in power electronics modules, fully qualified silicon carbide (SiC) Z-FET(TM) MOSFETs and diodes provide zero reverse recovery losses and temperature-independent switching. Model CPMF-1200-S080B (4.08 x 4.08 mm) is rated at 1,200 V/20 A with nominal Rds(on) of 80 mOhms, while CPMF-1200-S160B (3.1 x 3.1 mm) is rated at 1,200 V/10 A with nominal Rds(on) of 160 mOhms. Operating junction temperature for both devices is -55 to +135°C.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Nov 15, 2011 While 30 V SiZ300DT comes in PowerPAIR® 3 x 3 mm package and targets DC/DC applications handling currents of 10 A and under, 30 V SiZ910DT in PowerPAIR 6 x 5 mm package suits applications above 20 A. Devices in PowerPAIR 6 x 3.7 mm package include 25 V SiZ728DT, SiZ790DT with on-board Schottky diode, and 30 V SiZ730DT with RDS(on) of 0.0093 ohms @ 4.5 V and 0.013 ohms at 4.5 V. All products help simplify design of efficient synchronous buck single and multiphase DC/DC converters.

Clare Inc.    Beverly, MA 01915
Nov 02, 2011 Capable of providing 2.5 A of peak drive current, Model IX3120 features supply voltage range of 15-30 V and common mode rejection of 25 kV/µsec at VCM = 1,500 V. Input signal is provided by LED, which is optically coupled to IC that contains high-speed CMOS power output stage. This combination provides isolated driver capabilities without use of isolation transformers. Model IX3120 is suited for DC/DC converters, switched-mode power supplies, and solar inverters.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Nov 01, 2011 Housed in sealed TO-205AD packages, JAN-qualified 60 V Models 2N6660JANTX/JANTXV offer on-resistance of 1.3 W at 10 V, gate-source threshold voltage of 1.7 V, and switching speeds of 8 nsec, while 90 V Models 2N6661JANTX/JANTXV provide 3.6 W on-resistance at 10 V, gate-source threshold voltage of 1.6 V, and 6 nsec switching speed. Both feature input capacitance of 35 pF and are suited for military, space, and avionics applications.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Oct 24, 2011 Supplied in MICRO FOOT® 0.8 x 0.8 x 0.357 mm chipscale package, 8 V n-channel Si8802DB and p-channel Si8805EDB TrenchFET® power MOSFETs are suited for load switching in handheld devices. Respective on-resistance values for n- and p-channel MOSFETs are 54 and 68 mW at 4.5 V, 60 and 88 mW at 2.5 V, 86 and 155 mW at 1.5 V, and 135 and 290 mW at 1.2 V. These values minimize voltage drops across load switch, preventing unwanted UVLO. All versions are halogen free and RoHS compliant.

MagnaChip Semiconductor    Cheongju-si,Chungbuk   Korea (south)
Oct 14, 2011 Used as power conversion part for Switched-Mode Power Supplies where flyback topology is adopted, MDx Series 650 V MOSFETS are typically used for LCD-TVs and LCD monitors which require high-speed switching. In mission critical situations, use of power supplies which incorporate 650V HV MOSFET is essential to securing stable and regulated supply of power, particularly in countries that experience frequent power supply disruptions.