Electronic Components & Devices

Compact Power MOSFET is designed for automotive applications.

April 1, 2015

Offering alternative to D²PAK and DPAK devices used in automotive applications, AEC-Q101-qualified SQJQ402E comes in 100% lead (Pb)-free, 8 x 8 x 1.8 mm PowerPAK® 8x8L package featuring gull-wing leads for mechanical stress relief. This 40 V TrenchFET® power MOSFET, operating to +175°C, features internal construction that minimizes inductance and enables max on-resistance of 1.5 mΩ at 10 V (1.8 mΩ at 4.5 V). Continuous drain current capability is rated up to 200 A. Read More

Electronic Components & Devices

GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.

March 27, 2015

Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency. Read More

Electronic Components & Devices

SIC MOSFETs achieve temperature rating of 200°C.

March 25, 2015

Utilizing high-voltage silicon carbide, STMicroelectronics' SCTx0N120 Series is suited for solar inverters, high-frequency power supplies, and power factor correctors as well as fully electric and hybrid electric vehicles. Model SCT30N120 is rated at 1,200 V and 100 mΩ, while Model SCT20N120 is rated 1,200 V and 290 mΩ. SiC Power MOSFETs are next step versus traditional silicon MOSFETs and IGBTs, for all applications in power conversion running at frequency ≥100 kHz. Read More

Electronic Components & Devices

Gallium Nitride Transistor (600 V) comes in TO-247 package.

March 25, 2015

Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V. Read More

Electronic Components & Devices

Low-Voltage Trench MOSFET comes in 40 V rated version.

March 24, 2015

Based on U-MOS IX-H semiconductor process, 40 V-rated TPHR8504PL comes in 5 x 6 mm SOP-Advance package and offers current rating of 150 A that promotes reliability. Degree of Qoss promotes efficiency in SMPS, including servers and telecom base stations, DC-DC converters, synchronous rectification, and other power management circuitry. Other characteristics include typical Rds(on) of 0.7 mΩ (0.85 mΩ max) and typical output capacitance (Coss) of 1,930 pF. Read More

Electronic Components & Devices

GaN Power Semiconductors simplify PCB design with topside cooling.

March 24, 2015

With current ratings from 8–250 A, gallium nitride (GaN) power transistors feature GaNPX™ packaging and are based on Island Technology®. Die consist of islands and is embedded within laminate construction. Series of galvanic processes replace conventional techniques, such as clips, wire bonds, and molding compounds. While packaged to be cooled via topside of chip using heat sink or fan, products can also be cooled from bottom surface of die through conduction to PCB. Read More

Electronic Components & Devices, Electrical Equipment & Systems

Power Stages feature phase splitting architecture.

March 23, 2015

Delivering 20 A in 4 x 6 mm TQFN package, IntelliMOS™ MIC4520/MIC4521 are suited for point of load applications in networking, servers, storage, base stations, and graphic cards. Single-phase MIC4520 can operate with single-phase or multi-phase controller, while 2-phase MIC4521, featuring integrated current and temperature sensing, can be interfaced with single-phase controller to build power converter. Utilizing FETZilla™ DMOS technology, devices achieve over 90% peak efficiency. Read More

Electronic Components & Devices

MOSFET extends battery usage in ultraportable applications.

March 19, 2015

Offered in chipscale MICRO FOOT® package with 1 mm² footprint, Si8410DB TrenchFET® 20 V n-channel MOSFET is optimized for use as load switch, small-signal switch, and high-speed switch in power management applications. Device features low on-resistance of 37 mΩ at 4.5 V, 41 mΩ at 2.5 V, 47 mΩ at 1.8 V, and 68 mΩ at 1.5 V. With ratings down to 1.5 V and ±8 V VGS, MOSFET extends battery usage in wearable devices, smartphones, tablets, and solid-state drives. Read More

Electronic Components & Devices

PowerPAK 20 V MOSFET enhances reliability of portable electronics.

February 19, 2015

Supplied in 2 x 2 mm footprint PowerPAK® SC-70 package, SiA466EDJ increases power density and reliability for portable electronics. This 20 V n-channel TrenchFET® power MOSFET, with VGS rating of ±20 V, offers 25 A continuous drain current and 2,500 V ESD protection. On-resistance of 9.5 mΩ (10 V), 11.1 mΩ (6 V), and 13.0 mΩ (4.5 V) reduces conduction losses, and 6.3 nC typical gate charge and 0.9 Ω gate resistance minimize switching losses. Read More

Electronic Components & Devices

Depletion-Mode MOSFETs utilize vertical DMOS process.

February 11, 2015

Offered in SOT-89/-223/-23 packages, CPC39xx N-channel depletion-mode MOSFETs are available with voltage ratings that range from 60–800 V. These normally on (NO) FETs, with max Gate-to-Source threshold voltages from -2.9 to -3.9 V, can conduct current without any gate voltage. Applications include voltage pre-regulator circuits, cold start voltage feed, current sources, constant current loads, LED drive circuits, NO switches, ignition modules, converters, and power supplies. Read More

Electrical Equipment & Systems, Electronic Components & Devices

High-Voltage MOSFETs suit SMPS applications.

January 23, 2015

Built on second-generation Super Junction Technology, 500 V Series of High-Voltage MOSFETs are optimized for operation in switch mode power supplies to 500 W. Devices range from 12–20 A with low on-resistance from 190–380 mΩ and ultra-low gate charge of 22–45 nC. Designed to withstand high energy pulse in avalanche and commutation modes, RoHS-compliant devices meet stringent 80 PLUS efficiency standards required for consumer products, lighting applications, and ATX/silver box PC SMPS. Read More

Electronic Components & Devices

N-Channel Power MOSFETs achieve low resistance.

January 22, 2015

Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V. Read More

Electronic Components & Devices

Trench PT/FS IGBT Platform reduces conduction, switching losses.

December 11, 2014

Supplied as bare die, Trench IGBT platform includes Punch Through (PT) and Field Stop (FS) technologies and increases efficiency in motor drives, UPSs, solar inverters, and welding machine inverters. Collector-to-emitter voltages, as well as fast and soft turn-on and turn-off, allow low conduction and switching losses while providing breakdown voltages to 650 V for increased reliability. Collector current ratings range from 30–240 A, and available breakdown voltages are 600 and 650 V. Read More

Electronic Components & Devices

N-Channel MOSFETs suit soft switching topologies.

December 8, 2014

Built on Super Junction Technology, 600 V Models SiHx28N60EF and SiHx33N60EF are suited for zero voltage switching/soft switching topologies such as phase-shift bridges and LLC converter half bridges. Minimized reverse recovery charge allows devices to regain ability to block full breakdown voltage quickly, helping to avoid failure from shoot-through and thermal overstress. Offered in 4 packages, 28 A SiHx28N60EF and 33 A SiHx33N60EF feature low on-resistance of 123 Ω and 98 Ω, respectively. Read More

Electronic Components & Devices

IGBT Power Modules control lines rated to 1,700 V-450 A.

November 24, 2014

Intended for motor control and inverter applications, IGBT Power Modules are available in half-bridge, 6-pack, and PIM module designs (standard and custom) in S, D, H, W, and WB packages with ratings up to 1,700 V and 450 A. Rugged semiconductor products, combining speed and efficiency in flexible format, offer short circuit capability and free-wheeling diodes. Positive temperature coefficient devices can be paralleled easily to increase current handling capability. Read More

Electronic Components & Devices

High-Power GaN HEMTs serve C-Band applications.

November 11, 2014

Rated for 200 W continuous wave (CW) and 4.4–5.0 GHz operation, CGHV50200F gallium nitride (GaN) high electron mobility transistor (HEMT) suits tropospheric scatter (troposcatter) communications applications. These 50 Ω, internally matched units, which exhibit 180 W typ PSAT, 11.5 dB typ power gain, and 48% typ power efficiency, allow solid-state power amplifiers (SSPAs) to replace traveling wave tube (TWT) amplifiers in satellite broadcasting systems. Read More

Electronic Components & Devices

Dual Power MOSFET optimizes efficiency in DC/DC applications.

November 7, 2014

Supplied in 6 x 6 mm PQFN package for backside mounting, International Rectifier's IRFHE4250D uses 25 V FastIRFET™ silicon technology for optimal switching performance and features exposed top that maximizes thermal transfer. Features include 60 A Power Block, (<0.75 mm) package profile, low charge control MOSFET (13 nC typ), low RDS(ON) synchronous MOSFET (<1.35 mΩ), and intrinsic Schottky diode. RoHS-compliant, halogen-free product targets 12 V input DC/DC synchronous buck applications. Read More

Electronic Components & Devices, Green & Clean

IGBT Power Modules serve solar inverter and UPS applications.

October 16, 2014

For 3-level neutral point clamp (NPC) topologies, VS-ENQ030L120S provides collector-to-emitter breakdown voltage of 1,200 V and collector current rating of 30 A. For 3-level inverter stages, VS-ETF075Y60U and VS-ETF150Y65U respectively offer choice of 75 and 150 A collector current ratings and 600 and 650 V collector-to-emitter breakdown voltages and perform up to +175 °C. For double boost converters, 15 A VS-ETL015Y120H features collector-to-emitter breakdown voltage of 1,200 V. Read More

Electronic Components & Devices

GaN HEMT Die operates up to 6 GHz.

October 8, 2014

Exhibiting 17 dB typical small signal gain at 6 GHz and 18 dB typical small signal gain at 4 GHz, in addition to 65% typical power added efficiency, 40 W Model CGHV60040D and 170 W Model CGHV60170D are designed for use in Class AB linear amplifiers suitable for linear, pulsed, and CW applications. Both 0.4 µm, 50 V devices are supplied in Gel-Pak® Vacuum Release™ trays that immobilize components to ensure damage-free transportation and storage. Read More

Electronic Components & Devices

Chipscale Power MOSFET reduces power draw in ultraportables.

October 3, 2014

Used as battery switch and load switch in power management applications for smartphones, tablets, wearable devices, and high-end notebooks, MICRO FOOT® p-channel Si8457DB occupies 1.6 x 1.6 mm footprint and features on-resistance of 19 mΩ at -4.5 V, 23.4 mΩ at -2.5 V, and 35 mΩ at -1.8 V. On-resistance values mean minimal voltage drop at DC and pulse peak currents, resulting in less power wasted as heat. Also, ±8 V VGS rating promotes safety in lithium ion battery-powered applications. Read More