Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Nov 09, 2009 Using TrenchFET Gen III silicon, SkyFET® Si462DY delivers max RDS(on) of 3 mW at 10 V gate drive and 3.8 mW at 4.5 V. Device optimizes power conversion efficiency at light loads for mains-powered servers and battery-operated notebooks. Integration of Schottky into MOSFET silicon chip eliminates parasitic inductances that would be present if they were mounted to PCB as individual components or if separate MOSFET and Schottky diode components were co-packaged.

ON Semiconductor, LLC
Phoenix, AZ 85008
Aug 27, 2009 Housed in 0201 DSN2 chip level package measuring 0.6 x 0.3 x 0.3 mm, 30 V NSR0xF30NXT5G Series is optimized for low forward voltage drop of 370 mV at 10 mA, while NSR0xL30NXT5G Series is designed for low reverse current of 2.0 µA at 10 V reverse voltage. Solderable metal contacts under package enable 100% utilization of package area. Operating from -40 to +125°, RoHS-compliant devices are suited for mobile handsets, MP3 players, and digital cameras.

Cree Inc.
Durham, NC 27703
Jul 15, 2009 Z-Rec(TM) 600 V Silicon Carbide (SiC) Junction Barrier Schottky (JBS) diodes promote device power efficiency and surge current capability, allowing system power conversion applications from 250-1,500 W. Primarily used for boost diode applications in PFC circuits, diodes help reduce ac-dc power supply losses. Zero reverse-recovery current enables switch-mode power supplies to reach and exceed ENERGY STAR®, 80-plus certification levels.

Central Semiconductor Corp.
Hauppauge, NY 11788
Apr 01, 2009 Supplied in 0.026 x 0.043 inch x 0.016 in. SOD-923 SMT package, CMAD6263 is 70 V, 15 mA Schottky diode with max VF of 410 mV @ 1.0 mA, typically measuring 395 mV. Reverse leakage current is typically 98 nA @ 50 V, with max limit of 200 nA; power dissipation rating is 100 mW; and operating range is -65 to +150°C. Suited for use in portable, hand-held, battery-powered products, solution can be used in applications such as DC/DC converter, voltage clamping, and protection circuits.

STMicroelectronics
Carrollton, TX 75006
Feb 17, 2009 Suited for use in converters where every fractional efficiency percentage is valuable, STPSC806D and STPSC1006D silicon carbide (SiC) Schottky diodes save energy normally lost during switching. Elimination of reverse recovery charge minimizes switching losses and heat dissipation while simultaneously optimizing efficiency and allowing use of smaller components. Both 8 A-rated STPSC806D and 10 A-rated STPSC1006D, suited for 600 V applications, come in TO-220AC package.

ON Semiconductor, LLC
Phoenix, AZ 85008
Sep 05, 2008 Offered in SOT-723, SOT-963, and SOT-1123 packages measuring 1.0 x 0.6 x 0.37 mm, general purpose and bias resistor transistors are lead- and halogen-free, and suitable for mobile handsets. NSR Schottky Diodes, supplied in SOD-923 package, are available up to 500 mA with reverse blocking voltage to 70 V. Housed in SOD-923 package measuring 1.0 x 0.6 x 0.4 mm, NZ9F Series Zener Diodes feature steady-state power dissipation of 200 mW and full zener breakdown voltage of 2.4-24 V.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Jul 30, 2008 Built on sub-micron trench technology, 30CTT045 and 60CPT045 are 45 V Schottky diodes that offer optimized VF versus IR trade-off for optimized system efficiency. Max forward voltage drop at +125°C is under 0.50 V typ @ 30 A for 2 x 30 A 60CPT045 and under 0.50 V typ @ 15 A for 2 x 15 A 30CTT045. Reverse leakage at +125°C is 5 and 2 mA, respectively, with tight parameter distribution. Stable breakdown voltage over 57 V typ accommodates voltage spikes and optimizes power density.

Fairchild Semiconductor
San Jose, CA 95134
May 21, 2008 Supplied in 0.4 mm-high SOD923 package, models BAS70SL, BAS40SL, and RB751SL offer space- and energy-efficient solutions for portable electronics applications such as cell phones, PDAs, and digital cameras. RoHS-compliant products, which feature low forward drop (VF) of 380 mV, utilize Pb-free terminals and are characterized for moisture sensitivity in accordance with lead-free reflow requirements of joint IPC/JEDEC standard J-STD-020.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Jan 31, 2008 Available in 8 models, 100 V Schottky Diode Gen 5.0 silicon platforms offer typical forward voltage drop from 0.55 V at 8 A to 0.61 V at 30 A and typical reverse leakage from 1-5.5 mA at 125°C with very tight parameter distribution. Breakdown voltage of greater than 115 V accommodates voltage spikes and optimizes power density. Suited for high-temperature applications, diodes feature submicron trench technology and reverse biased safe operating area.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Jan 28, 2008 Suited for dc-to-dc conversion applications, Siliconix Si4642DY SkyFET(TM) single-chip device combines 30 V breakdown voltage with MOSFET on-resistance of 3.75 mW at 10 V gate drive. Unit eliminates parasitic inductances, and can be used as low-side power MOSFET in synchronous buck converters for notebook core voltage and VRM applications, graphic cards, point-of-load power conversion, and synchronous rectification in computers and servers.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Nov 20, 2007 Rated to 150°C, FCSP FlipKY® series includes 0.9 x 1.2 x 0.5 mm, 0.5 A diodes as well as 1.5 x 1.5 x 0.6 mm, 1.0 and 1.5 A diodes. Uses in portable electronic devices include battery protection, freewheeling diode, boost diode, and current steering. All version are offered in FlipKY wafer-level, chip scale format, which offers anode and cathode on same side of die with connections made through solder bump pads. Max forward voltages range from 0.33-0.47 V.

Cree Inc.
Durham, NC 27703
Nov 01, 2007 Designed for computer power supplies, Model CSD08060 8 A rectifier eliminates need for snubbers and reduces power losses, which leads to cool operating temperatures. Unit produces less EMI and offers fast switching speeds without reverse recovery currents. Enabling streamlined circuit design that results in small board size and component counts, product allows high-power density designs for compact power supplies for high-performance applications.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Apr 19, 2007 Supplied in 2.5 x 1.3 x 0.65 mm package, Schottkey MicroSMP rectifiers and transient voltage suppressors (TVS) offer junction-to-lead thermal resistance of 30°C/W and 20°C/W and carry 1 A and 100 W ratings. Schottky MicroSMP rectifiers provide secondary rectification and freewheeling diode functions as well as flywheel and polarity protection in various applications. MicroSMP TVS devices are optimized for power and signal line protection and high-power voltage regulation.

Cree Inc.
Durham, NC 27703
Aug 25, 2006 Operating at 600 V, 2 A silicon carbide (SiC) Zero Recovery® rectifier is designed for use in power supplies used in desktop PCs. This Schottky diode replaces silicon-based rectifiers and simplifies Power Factor Correction Boost design by eliminating need for snubbers and reducing component count. Use of this product also serves to reduce power losses and produce minimal EMI.

M/A-COM, Inc.
Lowell, MA 01853
Dec 15, 2005 Offered in RoHS-compliant and non-RoHS-compliant versions, PIN, Schottky, and varactor diodes are available in miniature, 2-leaded SC-79 package that features 0.6 nH inductance and meets 260°C max rating required for Pb-free processing. Varactor diodes are designed for VCO applications, phase shifters, and tunable filters, while Schottky diodes are suited for RF power detector circuits requiring high sensitivity. PIN diodes suit base station and switching applications.

STMicroelectronics
Carrollton, TX 75006
Feb 10, 2005 With maximum junction temperature of 175°F, Models STPS1150, STPS2150, and STPS3150 are 150 V Schottky diodes that handle continuous forward currents up to 1, 2, and 3 A, respectively. Negligible reverse recovery charge means near-zero switching losses. Available in surface-mount and axial-lead packages, units minimize voltage transients and oscillations during fast switching, and are suited for secondary rectification of fly-back power supplies.

Micrometrics
Londonberry, NH 03053
Jan 14, 2005 Low, medium, and high barrier Schottky ring quads are available in CS-17 package measuring 0.060 x 0.060 x 0.025 in. tall with 4 bonding pads on bottom. Manufactured using epitaxial process to ensure control over carrier concentration and thickness, products have closely matched junction capacitance and forward voltage. Monolithic design and square, ceramic, SMT package with epoxy top make units suited for use in double balance mixers, modulators, and doublers.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Apr 23, 2004 Offered in 1.2 x 0.8 x 0.6 mm SOD-523 package, BAS40-02V, BAS70-02V, BAS581-02V, and BAT54-02V Schottky diodes provide compact solutions for general rectification applications in mobile communications and computing systems. Models BAS70-02V and BAS581-02V have diode capacitance of 2 pF with leakage currents of 100 nA and 0.5 µA, respectively. Models BAS40-02V and BAT54-02V offer respective capacitance values of 5 and 12 pF and leakage currents of 100 nA and 2 µA.

Advanced Power Technology
Bend, OR 97702
Mar 02, 2004 Available in 600 and 1,200 V breakdown voltages, SiC ZERO RECOVERYâ„¢ Schottky Diodes come in D2, D3, TO-220, TO-247, and SOT-227, as well as hermetic TO-257, TO-254, and TO-258 packages. Configurations include single discrete, multi-die discrete, and center-tap devices. Units offer switching speed up to 500 kHz and are rated at 175°C. Switching losses are nearly eliminated resulting in 3-7% reduction in PFC power consumption.

Cree Inc.
Durham, NC 27703
Feb 02, 2004 Silicon carbide (SiC) Zero Recoveryâ„¢ Schottky diodes, available as 300 or 1,200 V diodes in 10 and 20 A versions, are offered in TO-220 and TO-247 packages. Applications for 300 V devices are for output rectifiers and power factor correction in power supplies. Applications for 1,200 V devices are as anti-parallel diodes for inverters and snubber diodes for IGBT inverters.