Schottky Diodes

Electronic Components & Devices

Schottky Barrier Diodes are suitable for voltage boosting circuits for LCDs.

Mar 15, 2017

Available in CCS15F40, CUS15F40, CBS10F40, CUS10F40, CTS05F40, and CUS05F40 models, Schottky Barrier Diodes feature reverse voltage of 40 V. Having 130pF of total capacitance at zero reverse voltage, CCS15F40 provides 25μA of maximum reverse current. Diodes come in SOD-323, CST2C, CST2B and SOD-882 packages and are used in white LED backlights.

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Electronic Components & Devices

SZB900 Series Detector Diodes offer 0.3V forward voltage drop.

Feb 06, 2017

Eliminating need for external DC biasing, SZB900 Series of Zero Bias Schottky Detector Doides are used as components of video detectors and power monitors. Featuring low junction capacitances and high voltage sensitivity, units are suitable for waveguide, coaxial applications through K-band. Operated in -55°C to +150°C temperature range with power dissipation of 100 mW, diodes are housed in... Read More

Electrical Equipment & Systems, Electronic Components & Devices, Optics & Photonics

Vishay Intertechnology to Exhibit Industry-Leading MOSFETs, ICs, Passive Components, Diodes, and Optoelectronics at APEC 2016

Mar 16, 2016

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2016, taking place March 20-24 in Long Beach, California. In booth 2017, the company will be highlighting its latest industry-leading power MOSFET, IC, passive component, diode, and optocoupler technologies for a wide range of... Read More

Electrical Equipment & Systems, Electronic Components & Devices, Test & Measuring Instruments

Wolfspeed to Exhibit SiC Power Portfolio at APEC 2016

Mar 09, 2016

Wolfspeed, A Cree Company and a leading global supplier of silicon carbide (SiC) power products — including best-in-class SiC MOSFETs, Schottky diodes, and modules — will be showcasing its industry-leading solutions at this year’s Applied Power Electronics Conference and Exposition (APEC 2016). The annual conference, which will take place March 20 – 24 in Long Beach, Calif., is globally... Read More

Electronic Components & Devices

High-Voltage Schottky Rectifier Modules offer ultrafast recovery.

Oct 06, 2014

Integrating 2 independent diodes in insulated SOT-227 package, avalanche energy rated AK2S200-170 modules offer forward voltage of 0.63 V and repetitive peak reverse voltage of 170 V. Diodes' structure and lifetime control support ultrafast, soft recovery. These 200 A, single-phase modules, supporting max operation and storage junction temperature of 150°C, offer recovery current and... Read More

Electronic Components & Devices

Silicon Power Schottky Diodes suit high-frequency applications.

Jul 28, 2014

Optimized for low forward voltage drop with moderate leakage, SD51 silicon power Schottky diodes feature continuous forward current of 60 A and repetitive peak reverse voltage of 45 V. These DO-5 stud-mount parts are primarily used in output stage of switching power supply in high-reliability commercial and industrial applications. Characteristics also include non-repetitive peak surge current of... Read More

Electronic Components & Devices

SiC Schottky Diodes serve high-power industrial applications.

Oct 23, 2013

Silicon carbide (SiC) Schottky diodes exhibit breakdown field strength and thermal conductivity that let designers create products with optimized performance characteristics: zero reverse recovery, temperature-independent behavior, high-voltage capability, and high-temperature operation. Diodes include APT10SCD65K (650V, 10A, TO-220 package), APT10SCD65KCT (650V, 10A, common cathode... Read More

Electronic Components & Devices

Cree Licenses GaN Device Patents to Transphorm

Aug 12, 2013

Provides Access to Key Patents for GaN Power Device Market DURHAM, NC – Cree, Inc. (Nasdaq: CREE), today announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree’s extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices for use in the field of power conversion... Read More

Electronic Components & Devices

Schottky Rectifiers feature low forward voltage drop.

Aug 01, 2013

Optimized for use in commercial applications, TMBS® Trench MOS Barrier Schottky Rectifiers include 12 additional models rated at 45, 60, and 100 V with current ratings from 6–20 A. Nine dual-chip and three single-chip units, available in surface-mount TO-252 package, feature low forward voltage drop down to 0.34 V at 3 A. Devices optimize efficiency in low-voltage, high-frequency... Read More

Electronic Components & Devices

Flip-Chip Schottky supports solder reflow manufacturing process.

May 29, 2013

Suited for single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors, MADS-001317-1500 consists of package-less Schottky device with contacts that allow for standard solder reflow manufacturing processes. Device is fabricated using GaAs process, which features full passivation, while degree of parasitic capacitance and... Read More

Electronic Components & Devices

DLA-Qualified Schottky Diodes suit aerospace/defense applications.

Mar 14, 2013

Offered in Thinkey™ package that features ceramic and metal construction with no wire bonds, U.S. Defense Logistics Agency (DLA)-qualified Schottky diodes offer typical heat dissipation from 0.2 to 0.85°C/W and enable double-side cooling. Soft solder is not used in construction, and 15, 30, and 45 V ratings are available. Series includes 1N6910UTK2–1N6912UTK2 (25 A) and... Read More

Electronic Components & Devices

Pasternack Enterprises Expands Line of Schottky Diode Detectors

Dec 20, 2012

Irvine, CA - Pasternack Enterprises, Inc., a leading ISO 9001:2008 manufacturer and global supplier of RF and microwave products, announces the expansion of their line of Schottky diode detectors. RF detectors from Pasternack are coaxial components that convert the input RF signal strength into proportional DC voltage at its output, also referred to as "video out". Pasternack Enterprises'... Read More

Electronic Components & Devices

Schottky Barrier Rectifier Diode is packaged as lead-less chip.

Nov 28, 2012

Featuring top-bottom symmetry that promotes heat transfer and current handling, Schottky barrier rectifier diodes  are available with current values from 0.1–8 A and voltages from 20–200 V for such applications as SMPS, high-frequency rectification, portable battery-powered devices, and reverse bias protection. Cases are composed of FRP substrates with epoxy underfill, and sizes include... Read More

Electronic Components & Devices

SiC Schottky Diodes improve electrical power conversion.

Nov 28, 2012

Targeting high-power, high-voltage, industrial applications, 1,200 V Schottky diodes are based on SiC material and technology. This increases breakdown field strength and thermal conductivity, attributes which let designers create devices with optimized characteristics encompassing zero reverse recovery, temperature independent behavior, and voltage capability. Offered in SMT backside... Read More

Electronic Components & Devices, Sensors Monitors & Transducers

RF Power Detector is suited for use in lab environments.

Jun 27, 2011

Supplied in rugged SMA housing, CPDETLS-4000 is designed for RF power monitoring in general lab environments. This zero-bias Schottky diode, intended for use as large-signal (greater than -10 dBm) power detector has frequency range of 10 MHz to 4 GHz. Input signal is rated at +30 dBm max, and video capacitance is 100 pF. Respectively, operating and storage temperature ranges are -20 to +70°C... Read More

Electronic Components & Devices

Silicon Carbide Power Schottky Diode is offered in 60 A version.

May 20, 2011

Model SDP60S120D, 1,200 V power Schottky diode delivers continuous forward current measured at Tc of 145°C. Operating in temperatures from -55 to +175°C, diode has Qc of 260 nC as well as positive temperature coefficient which helps to parallel multiple units and facilitates temperature-independent switching. Product exhibits zero reverse recovery current and zero forward recovery voltage.... Read More