Schottky Diodes

Electrical Equipment & Systems, Electronic Components & Devices, Optics & Photonics

Vishay Intertechnology to Exhibit Industry-Leading MOSFETs, ICs, Passive Components, Diodes, and Optoelectronics at APEC 2016

March 16, 2016

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2016, taking place March 20-24 in Long Beach, California. In booth 2017, the company will be highlighting its latest industry-leading power MOSFET, IC, passive component, diode, and optocoupler technologies for a wide range of...Read More

Electrical Equipment & Systems, Electronic Components & Devices, Test & Measuring Instruments

Wolfspeed to Exhibit SiC Power Portfolio at APEC 2016

March 9, 2016

Wolfspeed, A Cree Company and a leading global supplier of silicon carbide (SiC) power products — including best-in-class SiC MOSFETs, Schottky diodes, and modules — will be showcasing its industry-leading solutions at this year’s Applied Power Electronics Conference and Exposition (APEC 2016). The annual conference, which will take place March 20 – 24 in Long Beach, Calif., is globally...Read More

Electronic Components & Devices

High-Voltage Schottky Rectifier Modules offer ultrafast recovery.

October 6, 2014

Integrating 2 independent diodes in insulated SOT-227 package, avalanche energy rated AK2S200-170 modules offer forward voltage of 0.63 V and repetitive peak reverse voltage of 170 V. Diodes' structure and lifetime control support ultrafast, soft recovery. These 200 A, single-phase modules, supporting max operation and storage junction temperature of 150°C, offer recovery current and optimized stored charge that reduce both over dissipation in switching elements (and snubbers) and EMI/RFI. Read More

Electronic Components & Devices

Silicon Power Schottky Diodes suit high-frequency applications.

July 28, 2014

Optimized for low forward voltage drop with moderate leakage, SD51 silicon power Schottky diodes feature continuous forward current of 60 A and repetitive peak reverse voltage of 45 V. These DO-5 stud-mount parts are primarily used in output stage of switching power supply in high-reliability commercial and industrial applications. Characteristics also include non-repetitive peak surge current of 800 A, forward voltage of 0.66 V, and -65°C to 150°C operating range. Read More

Electronic Components & Devices

SiC Schottky Diodes serve high-power industrial applications.

October 23, 2013

Silicon carbide (SiC) Schottky diodes exhibit breakdown field strength and thermal conductivity that let designers create products with optimized performance characteristics: zero reverse recovery, temperature-independent behavior, high-voltage capability, and high-temperature operation. Diodes include APT10SCD65K (650V, 10A, TO-220 package), APT10SCD65KCT (650V, 10A, common cathode TO-220 package), APT20SCD65K (650V, 20A, TO-220 package), and APT30SCD65B (650V, 30A, TO-247 package). Read More

Electronic Components & Devices

Cree Licenses GaN Device Patents to Transphorm

August 12, 2013

Provides Access to Key Patents for GaN Power Device Market DURHAM, NC –Cree, Inc. (Nasdaq: CREE), today announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree’s extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices for use in the field of power conversion...Read More

Electronic Components & Devices

Schottky Rectifiers feature low forward voltage drop.

August 1, 2013

Optimized for use in commercial applications, TMBS® Trench MOS Barrier Schottky Rectifiers include 12 additional models rated at 45, 60, and 100 V with current ratings from 6–20 A. Nine dual-chip and three single-chip units, available in surface-mount TO-252 package, feature low forward voltage drop down to 0.34 V at 3 A. Devices optimize efficiency in low-voltage, high-frequency DC/DC converters, switching power supplies, freewheeling diodes, and OR-ring diodes. Read More

Electrical Equipment & Systems, Electronic Components & Devices, Optics & Photonics

Vishay Intertechnology to Showcase Latest Industry-Leading Technologies at 2013 CEF Summer Chengdu Show

June 14, 2013

SHANGHAI — Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the 2013 CEF (China Electronics Fair) Summer Chengdu show, taking place June 20-22 at the Chengdu Century City New International Convention and Exhibition Center. In hall 3, booth A214, the company will be highlighting its latest industry-leading innovations, including passive components, diodes,...Read More

Electronic Components & Devices

Flip-Chip Schottky supports solder reflow manufacturing process.

May 29, 2013

Suited for single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors, MADS-001317-1500 consists of package-less Schottky device with contacts that allow for standard solder reflow manufacturing processes. Device is fabricated using GaAs process, which features full passivation, while degree of parasitic capacitance and inductance allow for operation up to 80 GHz. Cutoff frequency allows use through millimeter wave frequencies.
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Electronic Components & Devices

Vishay Intertechnology Wins Three EFY Readers' Choice Awards

May 7, 2013

Company Honored in Capacitors, Diodes and Transistors, and Resistors Categories MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the company has been honored with three Electronics For You (EFY) 2012 Readers' Choice Awards in the categories of Capacitors, Diodes and Transistors, and Resistors. Presented at a ceremony in Bengaluru, India, the EFY Readers' Choice...Read More

Electronic Components & Devices

Vishay Intertechnology to Showcase Industry-Leading Power MOSFETs, Passive Components, Diodes, and Power ICs for Wide Range of Applications at APEC 2013

March 18, 2013

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2013, taking place March 17-21 in Long Beach, Calif. In booth 113, Hall A, the company will be highlighting its latest industry-leading power MOSFET, passive component, diode, and power IC technologies for a wide range of applications....Read More

Electronic Components & Devices

DLA-Qualified Schottky Diodes suit aerospace/defense applications.

March 14, 2013

Offered in Thinkey™ package that features ceramic and metal construction with no wire bonds, U.S. Defense Logistics Agency (DLA)-qualified Schottky diodes offer typical heat dissipation from 0.2 to 0.85°C/W and enable double-side cooling. Soft solder is not used in construction, and 15, 30, and 45 V ratings are available. Series includes 1N6910UTK2–1N6912UTK2 (25 A) and 1N6940UTK3–1N6942UTK3 (150 A), with anode to strap (AS) or cathode to strap (CS) polarity. Read More

Electronic Components & Devices

Pasternack Enterprises Expands Line of Schottky Diode Detectors

December 20, 2012

Irvine, CA - Pasternack Enterprises, Inc., a leading ISO 9001:2008 manufacturer and global supplier of RF and microwave products, announces the expansion of their line of Schottky diode detectors. RF detectors from Pasternack are coaxial components that convert the input RF signal strength into proportional DC voltage at its output, also referred to as "video out". Pasternack Enterprises'...Read More

Electronic Components & Devices

SiC Schottky Diodes improve electrical power conversion.

November 28, 2012

Targeting high-power, high-voltage, industrial applications, 1,200 V Schottky diodes are based on SiC material and technology. This increases breakdown field strength and thermal conductivity, attributes which let designers create devices with optimized characteristics encompassing zero reverse recovery, temperature independent behavior, and voltage capability. Offered in SMT backside solderable D(3), common cathode TO-247, and YO-247 packages, diodes come in 10, 20, and 30 A ratings. Read More

Electronic Components & Devices

Schottky Barrier Rectifier Diode is packaged as lead-less chip.

November 28, 2012

Featuring top-bottom symmetry that promotes heat transfer and current handling, Schottky barrier rectifier diodes  are available with current values from 0.1–8 A and voltages from 20–200 V for such applications as SMPS, high-frequency rectification, portable battery-powered devices, and reverse bias protection. Cases are composed of FRP substrates with epoxy underfill, and sizes include 0603, 0805, 1206, 2010, 2114, and 3220; standard and thin thicknesses are available. Read More

Electrical Equipment & Systems, Electronic Components & Devices

Vishay to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC 2012

January 31, 2012

Vishay Intertechnology to Showcase Latest Industry-Leading Power MOSFET, Passive Component, Diode, and IC Technologies at APEC 2012 MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2012, taking place Feb. 5-9 at the Disney Coronado Springs Resort in Orlando, Fla. In booth 911, the...Read More

Electronic Components & Devices, Sensors, Monitors & Transducers

RF Power Detector is suited for use in lab environments.

June 27, 2011

Supplied in rugged SMA housing, CPDETLS-4000 is designed for RF power monitoring in general lab environments. This zero-bias Schottky diode, intended for use as large-signal (greater than -10 dBm) power detector has frequency range of 10 MHz to 4 GHz. Input signal is rated at +30 dBm max, and video capacitance is 100 pF. Respectively, operating and storage temperature ranges are -20 to +70°C and -40 to +85°C. Read More

Electronic Components & Devices

Silicon Carbide Power Schottky Diode is offered in 60 A version.

May 20, 2011

Model SDP60S120D, 1,200 V power Schottky diode delivers continuous forward current measured at Tc of 145°C. Operating in temperatures from -55 to +175°C, diode has Qc of 260 nC as well as positive temperature coefficient which helps to parallel multiple units and facilitates temperature-independent switching. Product exhibits zero reverse recovery current and zero forward recovery voltage. It is suited for solar inverters, motor drives, power factor correction, UPS, AMPS, and induction heating. Read More

Electronic Components & Devices

ROHM Silicon Carbide Schottky Diodes Push the Performance Envelope

April 1, 2011

New SiC diodes provide industry-leading performance combining lower forward voltage and faster recovery time than Si fast recovery diodes SAN DIEGO, Calif.-- ROHM Semiconductor announces the availability of the SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD). This new class of SiC diodes offers industry-leading low forward voltage and fast recovery...Read More

Electronic Components & Devices

SiC Schottky Diode is rated for 5 A and 1,200 V.

March 3, 2011

Housed in surface mount TO-252 D-Pak with approximate board mounted dimensions of 6.6 x 9.9 x 2.3 mm, Model C2D05120E enables design of solar power micro-inverters. Silicon carbide unit features zero reverse recovery current, zero forward recovery voltage, and temperature-independent switching behavior. With operating junction and storage temperature of -55 to +175°C, diode is also suited for switch mode power supplies, motor drives, and high-voltage multipliers. Read More