Littelfuse, Inc.
C c hicago, IL 60016
Nov 20, 2009 Low pass, C-R-C filters in SP6001 Series feature line capacitance of 24 pF with cut-off frequency of approximately 115 MHz, while SP6002 Series filters have line capacitance of 30 pF with cut-off frequency of about 100 MHz. Each series includes 4- and 6-channel versions that provide attenuation of less than or equal to -30 dB from 800-3,000 MHz. Silicon protection arrays meet IEC61000-4-2 standard and have 6 V reverse standoff voltage with leakage under 1 µA.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Oct 27, 2009 Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 µA and spectral sensitivity range of 470-1,090 nm or 750-1,010 nm with visible light filtering epoxy.

Opto Diode Corp.
Newbury Park, CA 91320
Jul 17, 2009 Operating from 550-720 nm, selective wavelength photodiode, ODD-660W suits fluorescence detection, color sensors, daylight sensors, light barriers, and medical diagnostics application. Hermetically-sealed unit features spectral bandwidth of 80 nm, storage and operating temperature between -30 to 85°C, and lead soldering temperature of up to 260°C. It provides low dark current without optical filters.

Intense Ltd.
Glasgow   United Kingdom
Jun 25, 2009 Series 2400 laser diodes are 1,550 nm short pulsed single emitters and stacks designed for high power and efficiency. Single emitters are available in 75-150 µm junction lengths, with power levels of 6-12 W, and individual emitters can be stacked in mini bar configuration to provide up to 48 W of output power. Available in 5 different configurations in variety of low inductance packages, diodes can be fiber coupled in 200 or 400 µm core fibers, depending on configuration.

Opto Diode Corp.
Newbury Park, CA 91320
Jun 09, 2009 Designed for automotive and colorimetry industries, ODD-525W has active area of 0.62 mm², and peak sensitivity response of 525 nm. Features included are spectral bandwidth of 70 nm, and storage and operating temperatures range between -30°C to 85°C and lead soldering temperature at 260°C. Available in hermetically sealed standard TO-46 can, unit can be used in auto light-dimming, fluorescence detection, color sensors, and daylight detection tasks.

Opto Diode Corp.
Newbury Park, CA 91320
May 08, 2009 ODD-470W features spectral bandwidth of 100 nm and operates between 380-540 nm with peak sensitivity response at 470 nm. With low dark current and no optical filters used, photodetector is suited for use in color sensors, fluorescence detection, and medical diagnostic applications. Hermetically sealed, standard TO-46 can facilitates installation into existing or new systems. Storage and operating temperatures range from -30° to 85°C and lead soldering temperature is at 260°C.

California Micro Devices
Milpitas, CA 95035
Mar 30, 2009 Intended for use in ultra high brightness (UHB) LED lighting applications, LuxGuard products include silicon submounts that provide integrated ESD protection at levels exceeding 15 kV HBM (Human Body Model) while also helping cushion LED from stress due to thermal expansion coefficient differences between LED and lead frame. TVS diodes, available for customers who utilize ceramic submounts, mount next to LED die within LED fixture and deliver ESD ratings between 8 and 15 kV HBM.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Feb 16, 2009 Supplied in 0805-sized, SMT package with 0.85 mm profile and 2-pin connection, AEC-Q101-Qualified TEMD6200FX01 reacts to light for automatic control of LCD brightness and keypad backlighting in automotive applications. Integrated IR filtering epoxy technology matches spectral sensitivity of human eye, with minimal sensitivity to light beyond visible range. Characteristics include angle of half sensitivity of ±60°, radiant sensitive area of 0.3 mm², and peak sensitivity of 540 nm.

Discovery Semiconductors Inc.
Ewing, NJ 08628
Feb 10, 2009 Designed for 40 Gb/s and 100 Gb/s optical communications, Quad InGaAs Photodiode Arrays consist of 4 photodiodes monolithically integrated on common InP substrate. Diodes are available in 10, 30, 40, or 50 µm diameters and feature RF bandwidth of 10, 15, 20, or 40 GHz. With optical power handling exceeding +12dBm for each photodiode, arrays are suited for 100 Gb/s Long-Haul Pol-Mux (D)QPSK, 40 Gb/s Long-Haul (D)QPSK, and 40G/100G parallel networking.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Jan 21, 2009 Offered in PowerPAK® SC-70 package, SiA850DJ, 190 V N-channel power MOSFET plus co-packaged 190 V power diode provides on-resistance values from 17 W at 1.8 V V_GS to 3.8 V at 4.5 V V_GS, and diode forward voltage of 1.2 V at 0.5 A. Lead free, halogen-free, and RoHS-compliant product suits applications in high-voltage piezo-electric motors and organic LED backlighting in portable devices.

International Radiation Detectors
Torrance, CA 90505
Jan 20, 2009 AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, enabling absolute measurement of X-ray flux with energies 100 keV and beyond. Requiring no external voltage, detector has 10 x 10 mm square active area with room-temperature operation. Nitrided-oxide front window provides up to one Gigarad (SiO2) of radiation hardness. Photodiodes with directly-deposited, thin-metallic filters are available.

Photonic Products, Ltd.
Huntington Beach, CA 92647
Nov 18, 2008 Designed as single longitudinal mode semiconductor laser diode with TE mode oscillation, Opnext HL6385DG offers 150 mW optical output power at 642 nm wavelength. Aspect ratio of less than 2:1, coupled with 3 x 1 µm emitting chip size, allows efficient combination of multiple diodes in high-power RGB white light sources. Registered with FDA, this RoHS-compliant solution has output optimized for clarity and visibility.

Opto Diode Corp.
Newbury Park, CA 91320
Nov 17, 2008 Blue/green enhanced silicon photodiode preamplifier, ODA-6WB-500M, operates between 400-1,100 nm, with peak spectral frequency at 940 nm. Sensitivity response is 140 V/µW (min 100), typ, at 450 nm. Transimpedance gain is 500 Mohm, with custom gains available upon request. Hermetically sealed in 6 mm² TO-39 housing, device operates in -25 to 100°C temperatures and is suited for fluorescence detection and low-light-level medical diagnostic applications.

OnChip Devices, Inc.
Santa Clara, CA 95054
Aug 05, 2008 Suited for space sensitive applications in portable devices such as mobile handsets, PC/notebooks, and MP3 players, ESD2200 TVS diodes dissipate ESD strikes of ±30 kV contact discharge, meeting requirements of IEC 61000-4-2 international standard. Offered in 2, 3, 4, and 5 channels, they exhibit less than 20 pF input capacitance. Packaged in miniature SOT23, SOT143, and SC70 (SMD), units offer clamp voltage as low as 10 V, which eliminates IC latch-up and soft errors.

Opto Diode Corp.
Newbury Park, CA 91320
Jul 01, 2008 Hermetically sealed in TO-39 can for integration into new or existing systems, 5 mm² Model ODA-5WB-100K offers wavelength response of 28 V/mW at 450 nm, responsivity range from 400-1,100 nm, and peak spectral response of 940 nm. Blue/green-enhanced device features storage and operating temperatures from -25 to +100°C, and is suited for industrial and biomedical applications, such as fluorescence and phosphorescence.

IXYS Corp.
Santa Clara, CA 95054 2704
Jun 25, 2008 Encapsulated in 68 mm pole face hermetic pressure contact package with industry standard 100 mm overall diameter, rectifier diode has rms current of 8,678 A. Device comes in 2 voltage grades, W4713HM300 with V(RRM) of 3,000 V and W4713HM350 with V(RRM) of 3,500 V. Diode is suited for track-side power supplies, chemical rectifiers for aluminium plants, desalination, and excitation equipment, and general high power front end rectifiers.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Jun 23, 2008 Designed to protect dual high-speed USB ports or up to 2 other high-frequency signal lines against transient voltage signals, Model VBUS052BD-HTF offers maximum leakage current of less than 0.1 µA at working voltage of 5 V. It features breakthrough voltage of 7.9 V at 1 mA, and maximum clamping voltage of 16 V at 3 A. With 1.6 x 1.6 mm footprint and low profile of 0.6 mm, unit provides transient protection for 1 data line as per IEC 61000 4 2 (ESD) at ±15 kV (contact and air discharge).

Opto Diode Corp.
Newbury Park, CA 91320
Mar 21, 2008 Supplied in hermetically-sealed TO-39 package, NIR/Red Enhanced 6 mm² ODA-6W-500M Photodetector-Preamplifier features high gain in low light environments. Low-light, high-sensitivity component has active area that operates in NIR wavelength with response at 940 nm (typically 315 V/µW, min 290). Based on shielded amplifier electronics, standard unit offers 500 Mohm gain. Custom gains are available based on application specifications.

Opto Diode Corp.
Newbury Park, CA 91320
Feb 26, 2008 Suited for tight spaces, 6 mm² Model ODA-6W-100M includes shielded amplifier electronics and operates in NIR wavelength with response at 940 nm. Standard version features 500 MW gain with custom gains also available. Housed in hermetically sealed TO-39 package, infrared component's operating and storage temperature ranges from -25 to +100°C. Device is suited for applications in low pW region where discrete detector/preamplifier solutions are not sensitive enough.

Discovery Semiconductors Inc.
Ewing, NJ 08628
Feb 21, 2008 Offering linearity with third order intercept point as high as 50 dBm, 40 Gbps photodiode and receiver feature differential GPPO RF outputs that enable reception of all pre-amplified and unamplified 40G modulation formats. Receiver package interfaces to commercial CDR/DEMUX modules, and products address several modulation formats: ASK, DPSK, and DQPSK. Receiver configurations include single, balanced, and dual detection schemes, with and without transimpedance amplification.