AR Worldwide
Souderton, PA 18964
Oct 06, 2006 Hybrid traveling wave tube (TWT) amplifier Model 35ST1G18 delivers 35 W minimum at amplifier output connector with low harmonics, while Model 50ST1G18 provides 50 W minimum. Both solid state amplifiers are are 100% VSWR tolerant include built-in IEEE-4888 interface, 0 dBm input, gain control, RF output sample port, plus monitoring of TWT helix current, cathode voltage, collector voltage, heater current, heater voltage, baseplate temperature, and cabinet temperature.

Endwave Corp.
San Jose, CA 95134
Aug 31, 2006 JCA series includes over 12 models with ±0.75 dB average gain tracking and ±1.5 dB gain matching across 2-18 GHz bandwidth. Performance and reliability is achieved as result of automated assembly process using precise pick-and-place machinery and automatic wire-bonding. Products suit multi-channel transmit-receive architectures where predictable, consistent amplifier gain and phase parameters over larger lots of modules are vital to optimal system performance.

Sirenza Microdevices
Broomfield, CO 80021
Mar 28, 2006 Housed in QFN package, 2-stage fully-matched RFIC silicon germanium low noise amplifier (LNA) SGL-0622Z offers broadband performance from 5-4,000 MHz. Single-stage SGL-0363Z LNA is optimized for narrowband applications from 5-2,000 MHz. Suitable for GPS, ISM, and WiMAX applications, models are available in ROHS/WEEE compliant packages.

STMicroelectronics
Carrollton, TX 75006
Oct 06, 2005 Manufactured in 1.8 x 2.3 mm flip-chip package, TS4975 has I2C bus control interface that enables 14-step volume control from +18 to -34 dB. Product delivers up to 40 mW per channel continuous average power into 16 Ω loads on 3.3 V power supply and allows phantom ground output configuration to eliminate capacitors required for single-ended designs. Along with 9 operating modes, amp features pop and click noise-reduction circuitry to eliminate turn-on/off noise.

Richardson Electronics, Ltd.
La Fox, IL 60147
Sep 28, 2005 Suited for digital and analog broadcast applications, Model LDU401C provides 350 W at 1 dBcp and 90 Wrms, while Model LDU501C deliverws 450 W at 1 dBcp and 120 Wrms. Typical gain is 15 dB for Model LDU401C and 18 dB for LDU501C. Both are equipped with Motorola RF power devices.

AR Worldwide
Souderton, PA 18964
Jun 10, 2005 With frequency response of 4.0–10.6 GHz, Model 20S4G11 broadband solid-state amp helps satisfy need for low-power, high-frequency applications. Operating specifications include rated power output of 20 W min, flatness of +2.0 dB typ and +3.0 dB max, as well as gain, at max setting, of 43 dB min. Mismatch tolerance is rated at 100% of rated power without feedback, and harmonic distortion is -20 dBc max at 20 W.

AR Worldwide
Souderton, PA 18964
May 31, 2005 Designed for 100 kHz to 250 MHz frequency range, Model 1000A250 provides RF power for applications such as RF susceptibility testing, antenna and component testing, and Watt meter calibration. In addition to remote control and remote status indicators, unit features gain control, internal/external automatic level control, pulse input capability, and RF output level protection. Internal RF detector provides output for use in self-testing or operational modes.

Fairchild Semiconductor Corp.
South Portland, ME 04106
May 18, 2005 Manufactured in 3 x 3 mm LCC package, RMPA2265 PowerEdgeâ„¢ WCDMA/UMTS RF PAM supports 1850–1910 MHz and 1920–1980 MHz operation to address frequency flexibility and size requirements of mobile handsets, PDAs, and wireless PC data cards. Lead (Pb)-free unit complies with HSDPA standard and utilizes InGaP Heterojunction Bipolar Transistor technology. It has selectable high/low power modes and 2-stage power amp that internally matches input and output to 50 Ω.

Richardson Electronics, Ltd.
La Fox, IL 60147
Nov 05, 2004 Operating from 220 Vac internal power supply, 19 in. rack-mountable AL-series L-band Power Amplifiers employ LDMOS technology. Model AL50-D provides 70 Wrms for DAB applications and 200 W CW, while Model AL100-D is rated at 140 Wrms and 400 W CW. Also available are Models LDL15 and LDL80 pallets, which require 35 Vdc supply. LDL15 is rated at 15 Wrms and 45 W CW, and LDL80 is rated at 80 Wrms and 200 W CW.

Fairchild Semiconductor Corp.
South Portland, ME 04106
Aug 27, 2004 Housed in 3 x 3 mm package, RMPA0965 is optimized for CDMA2000-1X applications in 824–849 MHz frequency band. Single positive-supply operation, low power, and shutdown modes provide 40% CDMA mode efficiency at +28 dBm average output power. Dual-stage power amplifier is matched to 50 ohm on input and output, minimizing need for external components. Power-added efficiency and linearity result from proprietary InGaP Heterojunction Bipolar Transistor process.

Fairchild Semiconductor Corp.
South Portland, ME 04106
Jul 30, 2004 Suited for WLAN client and access point applications in 2.4–2.5 GHz frequency band, RMPA2455 utilizes InGaP Heterojunction Bipolar Transistor technology combined with 30 dBm output power and 30 dB small signal gain. Linear power amplifier, suited for 5 V environment, comes in 3 x 3 x 0.9 mm, leadless, 16-pin QFN package with 50 ohm internal matching on input and output. On-chip detector provides power-sensing capability, while logic capability provides shutdown options.

Fairchild Semiconductor Corp.
South Portland, ME 04106
Jul 23, 2004 Two-stage Model RMPA1959 features single positive-supply operation, low power and shutdown modes, and 39% CDMA efficiency at +28 dBm average output power, in 4 x 4 mm package. Utilizing InGaP Heterojunction Bipolar Transistor technology, linear RF module internally matches both input and output to 50 Ohms to minimize use of external components. High/low power modes optimize battery talk time.

Fairchild Semiconductor Corp.
South Portland, ME 04106
Jun 25, 2004 Suited for 2.4-2.5 GHz frequency band, Linear RF Power Amplifier Module, Model RMPA2453 offers Error Vector Magnitude of 2.5%. Unit internally matches input and output to 50 Ohms and provides on-chip power-sensing detector with 20 dB dynamic range and dual shutdown options to minimize power consumption. Utilizing Heterojunction Bipolar Transistor technology, amplifier is suited for WLAN routers, access points, adapter cards, and USB dongles.

Amplifier Research Corp.
Souderton, PA 18964 2412
Dec 04, 2002 EM Test Model CWS500D immunity tester contains signal generator, directional coupler, power amplifier, controller, and Windows-based operating software for Automotive, Telecom, and Military applications. Includes GPIB (IEEE 488.2) interface that permits connection of external dual channel power meter for measuring forward power and for monitoring injected RF current. Uses 100 W RF amplifier with frequency response of 10 kHz to 400 MHz.

Amplifier Research Corp.
Souderton, PA 18964 2412
May 02, 2002 Brainlink(TM) software and Series SC 1000 system controller connects and coordinates multiple pieces of RF test equipment, including 4 amplifiers, 4 antennas, 3 signal generators, 4 directional couplers, and spectrum analyzers or receivers. System enables range of emissions and susceptibility tests to be conducted without manually changing cable feeds or equipment settings. It automatically routes signals to and from appropriate test equipment.

Amplifier Research Corp.
Souderton, PA 18964 2412
Jan 17, 2002 Model 100A400 has high load tolerance, making it suitable for harsh test environments encountered in bulk current injection testing in automotive industry, where VSWR can exceed 6.0:1. 100 watt, 100 kHz to 400 MHz amplifier is also suitable for laboratory applications requiring instant bandwidth, high gain and moderate power output, such as antenna and component testing, wattmeter testing, and as driver for high-power amplifiers.