RF Amplifiers

Electronic Components & Devices

Bi-Directional RF Amplifiers operate up to 3 GHz.

August 20, 2015

Utilizing highly linear Class AB LDMOS semiconductor technology, Coaxial Packaged Bi-Directional Amplifiers include 2 narrow band models that operate in L-Band from 1.35–1.39 GHz and S-Band from 2.4–2.5 GHz. General purpose broadband model covers 30 MHz to 3 GHz and uses Class A GaAs semiconductors. Typical gain levels range from 20–23 dB with ±0.5 dB gain flatness. Providing 1 µs switching, amplifiers are suited for UAV, military radio, air traffic control, and weather observation. Read More

Electronic Components & Devices

RF Power Amplifiers offer 0.5 MHz to 20 GHz frequency range.

July 30, 2015

Designed to operate over extreme temperatures of -55 to +85°C, High-Rel Power Amplifiers are suited for electronic warfare, military communications, radar, point-to-point radio, telecom, test and measurement, medical, and SATCOM industries. Units generate saturated output power levels up to 100 W and all models require only single positive voltage supply ranging from +12 to +42 Vdc. Small signal gain levels range from 11–58 dB with IP3 linearity up to +66 dBm. Read More

Electronic Components & Devices

RF Distribution Unit targets HF long wire antennas.

July 23, 2015

Featuring 1U, 19 in. rackmount design, 2–30 MHz Model MtRF-5201 includes 5-pole bandpass filter and 8 individually buffered outputs. Unit provides net gain of 15 dB, noise figure of 3 dB, and IP3 of +38 dBm. Available with BNC, UHF, or N connectors, MtRF-5201 operates from 90–250 Vac line power or 9–18 Vdc at 1.5 W. Read More

Electronic Components & Devices

High Power Amplifiers cover 150 kHz to 7,500 MHz frequencies.

June 10, 2015

Covering UHF, VHF, L, S, and C frequency bands, High Power Amplifiers come in 22 models with output power levels greater than 10 W. Solid state 50 Ω hybrid MIC designs use GaN, GaAs, or LDMOS transistor technology that allows gain levels from 40–60 dB. Typical gain variation is ±1.5 dB. Enclosed in environmentally sealed coaxial metal packages, RF amplifiers include models with output P1dB levels from +10 to +50 W and models with output saturated power levels ranging from +40 to +50 dBm. Read More

Electronic Components & Devices, Mechanical Power Transmission

Broadband MMIC GaN LNA meets high-RF power survivability needs.

April 29, 2015

Fabricated in GaN technology and supplied in leadless, 4 x 4 mm, ceramic package, CMD219C4 broadband MMIC low-noise amplifier (LNA) operates from 4–8 GHz with gain of 22.5 dB, noise figure of 1.0 dB, and output 1 dB compression point of +17 dBm. Product withstands RF input power levels of up to 5 W without permanent damage. Areas of use include microwave radios and C-band applications, such as point-to-point and point-to-multi-point radios, military and space, and test instrumentation. Read More

Electronic Components & Devices

Portable RF Amplifiers withstand harsh environments.

April 15, 2015

Comprising 4 models covering multi-octave bandwidths from 1–40 GHz, Ultra-broadband Portable Bench Top RF Amplifiers offer up to 60 dB small signal gain, low noise figure of 5 dB, and output P1dB compression power ranges from +10 to +22 dBm. Units have internal AC voltage power supply of 115–120 Vac at 60 Hz. Operating from -40 to +85°C, 20 GHz modules use SMA female connectors, while 40 GHz versions utilize 2.92 mm connectors. All are fuse protected and come with 6 ft power cord. Read More

Electronic Components & Devices

Broadband RF Amplifiers operate from 0.5-40 GHz.

March 5, 2015

Based on GaAs PHEMPT semiconductor technology with 50 Ω hybrid MIC circuits enclosed in environmentally sealed metal packages, RF Broadband Amplifiers offer noise figures from 2.5–6 dB across entire frequency range. Devices have gain levels from 20–48 dB, gain flatness as low as ±0.5 dB, and power output from 20 mW to 2 W. Equipped with stainless steel SMA or 2.92 mm connectors, amplifiers feature DC voltage supply from +8.5 to +15 Vdc and bias current from 125–2,500 mA. Read More

Communication Systems & Equipment, Electronic Components & Devices

Broadband Low Noise Amplifiers range from 30 MHz to 40 GHz.

February 18, 2015

With noise figure levels from 2.5–3 dB typ across entire band, ultra-broadband and millimeter wave low noise amplifiers (LNAs) include 17 unconditionally stable models covering multi-octave bandwidths with flat gain response and GaAs PHEMT semiconductor technology. Features include 50 Ω hybrid MIC circuits enclosed in environmentally sealed metal packages with nickel or gold plating, stainless steel SMA or 2.92 mm connectors, and IP3 levels as high as +42 dBm. Read More

Electronic Components & Devices

Portable, 3U, 500 W Power Amplifier covers 80-1,000 MHz.

January 21, 2015

Delivering 500 W of broadband output power, Model 2175 comes in air-cooled chassis and provides single RF input and output as well as user-selectable configuration and operation in AGC (Automatic Gain Control), ALC (Automatic Level Control), and MGC (Manual Gain Control) modes. Use of high-voltage RF transistors (LDMOS) lend to ruggedness, while multi-faceted Monitoring and Control (M&C) UIs include Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen. Read More

Electronic Components & Devices

Power Amplifier delivers 1 kW broadband output power.

January 21, 2015

Housed in 5U, air-cooled chassis, Model 2170 features single RF input and output operating over 1-3 GHz frequency range. Unit offers user-selectable configuration and operation in 3 different modes, including Automatic Gain Control, Automatic Level Control, and Manual Gain Control. Equipped with Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen display, amplifier is suitable for test and measurement, electronic warfare, and communications applications. Read More

Communication Systems & Equipment, Electronic Components & Devices

High Linearity 4 W Power Amplifier suits Ka-band applications.

January 20, 2015

Offered in bare die format and 5 x 5 mm, 32-lead QFN package, MAAP-011139 has 29–31 GHz frequency range and delivers 24 dB of linear gain, 4 W of saturated output power, and 23% efficiency. This high-linearity power amplifier, suited for Ka-band, high-data density satellite communications, provides >27 dBm Pout/tone while maintaining IM3 levels of 30 dBc. Rating for input and output return loss is 10 dB. Read More

Electronic Components & Devices

RF Power Amplifier features optimized SWaP profile.

December 4, 2014

Housed in 4.50 x 3.50 x 0.61 in. aluminum chassis, NuPower™ 13G05A provides saturated RF power of at least 35 W from 800–2,000 MHz with greater than 40% efficiency across frequency band. With nominal input drive level of 0 dBm, L-band unit offers 45 dB of RF gain. Device is small enough for integration into air- or ground-based tactical, test, or training platforms. It can be used with communications and telemetry systems to provide range extension or with electronic warfare systems. Read More

Communication Systems & Equipment, Electronic Components & Devices

Linear RF Amplifiers operate from 0.8-9.5 GHz.

October 17, 2014

With gain performance from 18–32.5 dB, Coaxial GaAs PHEMT MMIC-based Amplifiers are suited for commercial and defense applications such as communications, radar and sensors, test instrumentation, telecom infrastructure, fixed microwave backhaul, and commercial 2-way radio. Units offer gain flatness from ±0.5 dB to ±2 dB and third order intercept levels from 38.5–47 dBm. Rated for -55 to +85°C operation, amplifiers are fully matched internally for input and output at 50 Ω. Read More

Electronic Components & Devices

E-Band Driver Amplifier targets point-to-point radios.

October 15, 2014

Delivering typical Psat of 24 dBm for 71-76 GHz and 81-86 GHz frequency ranges in single product, 4-stage Model MAAM-011167 is suited for high capacity macro cell and small cell backhaul point-to-point radios. Bare die power amplifier supports 18 dB of small signal gain with variable gain control for flexible performance tuning. Integrated power detector enables customers to avoid extra loss that is associated with discrete power detectors. Read More

Electronic Components & Devices

RF Power Amplifier suits base station applications.

August 1, 2014

Delivering up to 1,000 W PEP power into 50 Ω load over frequency range of 225–400 MHz, Model KAW5050 comprises power amplifier, controller sub-system, and AC power supply encased in 3 RU shelf. Class AB wideband system weighs 50 lb and mounts into standard 19 in. equipment rack. It can be operated and monitored remotely via RS232 or Ethernet control. Read More

Mechanical Power Transmission, Electronic Components & Devices

Operational Amplifier drives heavy loads at high output.

June 25, 2014

Delivering over 1 A output current, 40 V Model ADA4870 provides wide bandwidth of 52 MHz and slew rate of 2,500 V/µs to facilitate high-voltage pulses necessary to drive piezoelectric transducer in high-intensity focused ultrasound for medical treatment and procedures. In small-cell base stations and compact military radios, op amp assists with drive of power amplifier’s low impedance bias control to track envelope of RF signal, only using as much power for PA as needed to pass signal. Read More

Electronic Components & Devices

High Gain Amplifiers suit commercial/military radar applications.

April 24, 2014

Supplied in hermetically sealed, metal enclosures, L and S band high gain amplifiers cover 1.2–1.4 GHz and 3.1–3.5 GHz frequency ranges used for commercial and military radar applications as well as observation satellites and communications systems. These RF amplifiers utilize hybrid microwave IC design and advanced GaAs pHEMT technology to produce unconditionally stable module. Other features include built-in voltage regulation, bias sequencing, and reverse bias protection. Read More

Electronic Components & Devices

Broadband Amplifiers suit applications from 2-18 GHz.

April 17, 2014

Offered in 1 W and 2 W models, Broadband RF Amplifiers utilize hybrid microwave integrated circuit and advanced GaAs pHEMT technology. Connectorized SMA modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection. Featuring hermetically sealed design, amplifiers operate from -55 to +85°C with gain from 32–48 dB, gain flatness from ±1 dB to ±2 dB at 12–18 GHz range, and linearity levels from 39–42 dBm. Read More

Electronic Components & Devices

Broadband RF Gain Blocks offer up to 24 dB gain, 40 dBm OIP3.

November 22, 2013

Analog Devices, Inc., ADL5544/ADL5545/ADL5610/ADL5611 single-ended RF/IF gain block amplifiers operate from 30 MHz to 6 GHz and offer up to 24 dB gain and 40 dBm third-order intercept point (OIP3). Stable over frequency, temperature, and power supply, products integrate bias control circuits, are fabricated on InGaP HBT process, and come in SOT-89 packages. Features include ESD ratings of ±1.5 kV (Class 1C) and internal matching to 50 Ω at input and output. Read More

Communication Systems & Equipment, Mechanical Power Transmission, Electronic Components & Devices

Line Amplifiers support DOCSIS 3.1 systems.

October 30, 2013

Available in 12 and 24 V models, Models ACA1210, ACA1212, ACA1216, ACA2431, ACA2449, and ACA2461 provide signal fidelity over extended frequencies up to 1.2 GHz. Surface mount devices deliver optimal bit error rate, composite triple beat, composite second order, cross modulation, and carrier-to-intermodulation noise characteristics in fully loaded spectrum. Series leverages GaAs MESFET process for reliability along with GaN HEMT technology for high output power and optimum power efficiency. Read More