RF Amplifiers

Communication Systems & Equipment, Electronic Components & Devices, Mechanical Power Transmission

S-Band RF PA Module (30 W) targets communications, telemetry, EW.

November 5, 2015

Providing 30 W ave and 20 W min RF output power, solid-state NuPower 05E05A operates from 2,000–2,600 MHz for continuous wave (CW) and near-constant-envelope waveforms. This connectorized power amplifier (PA) module, supplied in 4.50 x 3.50 x 0.61 in. aluminum chassis and suited for S-band transmitters and data links, has nominal 0 dBm (1 mW) input signal and provides 44 dB RF gain while operating at 40% DC power efficiency with +28 Vdc supply voltage. Read More

Electronic Components & Devices

RF Amplifier System covers 1-2.5 GHz and delivers 2 kW HPA.

October 15, 2015

With 8U, air-cooled chassis, Model 2180 features single RF input and output and delivers 2 kW CW of broadband output power. AGC, ALC, and MGC modes support user-selectable configuration and operation, while optional filter/switches improve harmonic rejection. Portable unit uses high voltage RF transistors (GaN) and offers fast electronic VSWR protection. Multi-faceted Monitoring and Control (M&C) UIs include Web browser, TCP/IP Ethernet, RS-485, and front panel touchscreen. Read More

Electronic Components & Devices

LNAs and Gain Blocks cover frequency bands from 9 KHz to 3 GHz.

October 12, 2015

Coaxial-packaged RF amplifiers are unconditionally stable low noise and gain block amplifiers offering P1dB levels up to +23. In specific versions, GaAs PHEMT semiconductors are used for linear performance and efficiency. Noise figure levels range as low as 0.5 dB, and IP3 linearity reaches up to +37 dBm. While single DC positive voltage supply ranges from +12 to +15 Vdc, bias current ranges from 40–190 mA. Operating range is -40 to +85°C. Read More

Electronic Components & Devices

RF PA Module (10 W) works with L- and S-band equipment.

October 5, 2015

Supplied in 3.00 x 2.00 x 0.65 in. aluminum chassis with +85°C max baseplate temperature rating, NuPower™ 12B01A (Part No. NW-PA-12B01A) provides RF amplification for transmitters, transceivers, and data links that do not require linear performance. This broadband RF power amplifier (PA) for L- and S-band equipment delivers 10 W min and 13 W typ of RF power from 1,000–2,500 MHz when sourced with 0 dBm (1 mW) RF input signal. Power efficiency ranges from 30%–50%, and RF gain is 40 dB. Read More

Mechanical Power Transmission, Electronic Components & Devices

High Gain RF Power Amplifiers offer high output, gain, linearity.

September 15, 2015

Operating in K-band and available in SMA connectorized module package, PAC18700T and DRC23000M integrate supply circuitry that allows operation from single power source to foster facilitated installation into systems. PAC18700T (1.43 x 1.53 x 0.6 in.) provides >30 dBm saturated output power and >26 dB gain while covering 17.7–19.7GHz, while DRC23000M (1.2 x 1.05 x 0.6 in.) delivers >16 dBm output power and 20 dB gain while operating from 20–26 GHz. Read More

Electronic Components & Devices, Mechanical Power Transmission

GaN Power Amplifiers boast high power and high gain.

September 11, 2015

Featuring high gain levels from 43–60 dB across frequency bands of 30 MHz to 7.5 GHz, GaN Coaxial Power Amplifiers provide saturated output power levels from 10–100 W with 20–35% Power Added Efficiency. Thermal efficiency of GaN technology enables assemblies to be integrated into compact coaxial packages. All are equipped with single voltage supplies which are internally regulated. Devices' 50 Ω input/output matched designs are adaptable to range of power and modulation requirements. Read More

Electronic Components & Devices

Bi-Directional RF Amplifiers operate up to 3 GHz.

August 20, 2015

Utilizing highly linear Class AB LDMOS semiconductor technology, Coaxial Packaged Bi-Directional Amplifiers include 2 narrow band models that operate in L-Band from 1.35–1.39 GHz and S-Band from 2.4–2.5 GHz. General purpose broadband model covers 30 MHz to 3 GHz and uses Class A GaAs semiconductors. Typical gain levels range from 20–23 dB with ±0.5 dB gain flatness. Providing 1 µs switching, amplifiers are suited for UAV, military radio, air traffic control, and weather observation. Read More

Electronic Components & Devices

RF Power Amplifiers offer 0.5 MHz to 20 GHz frequency range.

July 30, 2015

Designed to operate over extreme temperatures of -55 to +85°C, High-Rel Power Amplifiers are suited for electronic warfare, military communications, radar, point-to-point radio, telecom, test and measurement, medical, and SATCOM industries. Units generate saturated output power levels up to 100 W and all models require only single positive voltage supply ranging from +12 to +42 Vdc. Small signal gain levels range from 11–58 dB with IP3 linearity up to +66 dBm. Read More

Electronic Components & Devices

RF Distribution Unit targets HF long wire antennas.

July 23, 2015

Featuring 1U, 19 in. rackmount design, 2–30 MHz Model MtRF-5201 includes 5-pole bandpass filter and 8 individually buffered outputs. Unit provides net gain of 15 dB, noise figure of 3 dB, and IP3 of +38 dBm. Available with BNC, UHF, or N connectors, MtRF-5201 operates from 90–250 Vac line power or 9–18 Vdc at 1.5 W. Read More

Electronic Components & Devices

High Power Amplifiers cover 150 kHz to 7,500 MHz frequencies.

June 10, 2015

Covering UHF, VHF, L, S, and C frequency bands, High Power Amplifiers come in 22 models with output power levels greater than 10 W. Solid state 50 Ω hybrid MIC designs use GaN, GaAs, or LDMOS transistor technology that allows gain levels from 40–60 dB. Typical gain variation is ±1.5 dB. Enclosed in environmentally sealed coaxial metal packages, RF amplifiers include models with output P1dB levels from +10 to +50 W and models with output saturated power levels ranging from +40 to +50 dBm. Read More

Electronic Components & Devices, Mechanical Power Transmission

Broadband MMIC GaN LNA meets high-RF power survivability needs.

April 29, 2015

Fabricated in GaN technology and supplied in leadless, 4 x 4 mm, ceramic package, CMD219C4 broadband MMIC low-noise amplifier (LNA) operates from 4–8 GHz with gain of 22.5 dB, noise figure of 1.0 dB, and output 1 dB compression point of +17 dBm. Product withstands RF input power levels of up to 5 W without permanent damage. Areas of use include microwave radios and C-band applications, such as point-to-point and point-to-multi-point radios, military and space, and test instrumentation. Read More

Electronic Components & Devices

Portable RF Amplifiers withstand harsh environments.

April 15, 2015

Comprising 4 models covering multi-octave bandwidths from 1–40 GHz, Ultra-broadband Portable Bench Top RF Amplifiers offer up to 60 dB small signal gain, low noise figure of 5 dB, and output P1dB compression power ranges from +10 to +22 dBm. Units have internal AC voltage power supply of 115–120 Vac at 60 Hz. Operating from -40 to +85°C, 20 GHz modules use SMA female connectors, while 40 GHz versions utilize 2.92 mm connectors. All are fuse protected and come with 6 ft power cord. Read More

Electronic Components & Devices

Broadband RF Amplifiers operate from 0.5-40 GHz.

March 5, 2015

Based on GaAs PHEMPT semiconductor technology with 50 Ω hybrid MIC circuits enclosed in environmentally sealed metal packages, RF Broadband Amplifiers offer noise figures from 2.5–6 dB across entire frequency range. Devices have gain levels from 20–48 dB, gain flatness as low as ±0.5 dB, and power output from 20 mW to 2 W. Equipped with stainless steel SMA or 2.92 mm connectors, amplifiers feature DC voltage supply from +8.5 to +15 Vdc and bias current from 125–2,500 mA. Read More

Communication Systems & Equipment, Electronic Components & Devices

Broadband Low Noise Amplifiers range from 30 MHz to 40 GHz.

February 18, 2015

With noise figure levels from 2.5–3 dB typ across entire band, ultra-broadband and millimeter wave low noise amplifiers (LNAs) include 17 unconditionally stable models covering multi-octave bandwidths with flat gain response and GaAs PHEMT semiconductor technology. Features include 50 Ω hybrid MIC circuits enclosed in environmentally sealed metal packages with nickel or gold plating, stainless steel SMA or 2.92 mm connectors, and IP3 levels as high as +42 dBm. Read More

Electronic Components & Devices

Portable, 3U, 500 W Power Amplifier covers 80-1,000 MHz.

January 21, 2015

Delivering 500 W of broadband output power, Model 2175 comes in air-cooled chassis and provides single RF input and output as well as user-selectable configuration and operation in AGC (Automatic Gain Control), ALC (Automatic Level Control), and MGC (Manual Gain Control) modes. Use of high-voltage RF transistors (LDMOS) lend to ruggedness, while multi-faceted Monitoring and Control (M&C) UIs include Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen. Read More

Electronic Components & Devices

Power Amplifier delivers 1 kW broadband output power.

January 21, 2015

Housed in 5U, air-cooled chassis, Model 2170 features single RF input and output operating over 1-3 GHz frequency range. Unit offers user-selectable configuration and operation in 3 different modes, including Automatic Gain Control, Automatic Level Control, and Manual Gain Control. Equipped with Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen display, amplifier is suitable for test and measurement, electronic warfare, and communications applications. Read More

Communication Systems & Equipment, Electronic Components & Devices

High Linearity 4 W Power Amplifier suits Ka-band applications.

January 20, 2015

Offered in bare die format and 5 x 5 mm, 32-lead QFN package, MAAP-011139 has 29–31 GHz frequency range and delivers 24 dB of linear gain, 4 W of saturated output power, and 23% efficiency. This high-linearity power amplifier, suited for Ka-band, high-data density satellite communications, provides >27 dBm Pout/tone while maintaining IM3 levels of 30 dBc. Rating for input and output return loss is 10 dB. Read More

Electronic Components & Devices

RF Power Amplifier features optimized SWaP profile.

December 4, 2014

Housed in 4.50 x 3.50 x 0.61 in. aluminum chassis, NuPower™ 13G05A provides saturated RF power of at least 35 W from 800–2,000 MHz with greater than 40% efficiency across frequency band. With nominal input drive level of 0 dBm, L-band unit offers 45 dB of RF gain. Device is small enough for integration into air- or ground-based tactical, test, or training platforms. It can be used with communications and telemetry systems to provide range extension or with electronic warfare systems. Read More

Communication Systems & Equipment, Electronic Components & Devices

Linear RF Amplifiers operate from 0.8-9.5 GHz.

October 17, 2014

With gain performance from 18–32.5 dB, Coaxial GaAs PHEMT MMIC-based Amplifiers are suited for commercial and defense applications such as communications, radar and sensors, test instrumentation, telecom infrastructure, fixed microwave backhaul, and commercial 2-way radio. Units offer gain flatness from ±0.5 dB to ±2 dB and third order intercept levels from 38.5–47 dBm. Rated for -55 to +85°C operation, amplifiers are fully matched internally for input and output at 50 Ω. Read More

Electronic Components & Devices

E-Band Driver Amplifier targets point-to-point radios.

October 15, 2014

Delivering typical Psat of 24 dBm for 71-76 GHz and 81-86 GHz frequency ranges in single product, 4-stage Model MAAM-011167 is suited for high capacity macro cell and small cell backhaul point-to-point radios. Bare die power amplifier supports 18 dB of small signal gain with variable gain control for flexible performance tuning. Integrated power detector enables customers to avoid extra loss that is associated with discrete power detectors. Read More