RF Amplifiers

Communication Systems & Equipment, Electronic Components & Devices

Broadband Low Noise Amplifiers range from 30 MHz to 40 GHz.

February 18, 2015

With noise figure levels from 2.5–3 dB typ across entire band, ultra-broadband and millimeter wave low noise amplifiers (LNAs) include 17 unconditionally stable models covering multi-octave bandwidths with flat gain response and GaAs PHEMT semiconductor technology. Features include 50 Ω hybrid MIC circuits enclosed in environmentally sealed metal packages with nickel or gold plating, stainless steel SMA or 2.92 mm connectors, and IP3 levels as high as +42 dBm. Read More

Electronic Components & Devices

Portable, 3U, 500 W Power Amplifier covers 80-1,000 MHz.

January 21, 2015

Delivering 500 W of broadband output power, Model 2175 comes in air-cooled chassis and provides single RF input and output as well as user-selectable configuration and operation in AGC (Automatic Gain Control), ALC (Automatic Level Control), and MGC (Manual Gain Control) modes. Use of high-voltage RF transistors (LDMOS) lend to ruggedness, while multi-faceted Monitoring and Control (M&C) UIs include Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen. Read More

Electronic Components & Devices

Power Amplifier delivers 1 kW broadband output power.

January 21, 2015

Housed in 5U, air-cooled chassis, Model 2170 features single RF input and output operating over 1-3 GHz frequency range. Unit offers user-selectable configuration and operation in 3 different modes, including Automatic Gain Control, Automatic Level Control, and Manual Gain Control. Equipped with Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen display, amplifier is suitable for test and measurement, electronic warfare, and communications applications. Read More

Communication Systems & Equipment, Electronic Components & Devices

High Linearity 4 W Power Amplifier suits Ka-band applications.

January 20, 2015

Offered in bare die format and 5 x 5 mm, 32-lead QFN package, MAAP-011139 has 29–31 GHz frequency range and delivers 24 dB of linear gain, 4 W of saturated output power, and 23% efficiency. This high-linearity power amplifier, suited for Ka-band, high-data density satellite communications, provides >27 dBm Pout/tone while maintaining IM3 levels of 30 dBc. Rating for input and output return loss is 10 dB. Read More

Electronic Components & Devices

RF Power Amplifier features optimized SWaP profile.

December 4, 2014

Housed in 4.50 x 3.50 x 0.61 in. aluminum chassis, NuPower™ 13G05A provides saturated RF power of at least 35 W from 800–2,000 MHz with greater than 40% efficiency across frequency band. With nominal input drive level of 0 dBm, L-band unit offers 45 dB of RF gain. Device is small enough for integration into air- or ground-based tactical, test, or training platforms. It can be used with communications and telemetry systems to provide range extension or with electronic warfare systems. Read More

Communication Systems & Equipment, Electronic Components & Devices

Linear RF Amplifiers operate from 0.8-9.5 GHz.

October 17, 2014

With gain performance from 18–32.5 dB, Coaxial GaAs PHEMT MMIC-based Amplifiers are suited for commercial and defense applications such as communications, radar and sensors, test instrumentation, telecom infrastructure, fixed microwave backhaul, and commercial 2-way radio. Units offer gain flatness from ±0.5 dB to ±2 dB and third order intercept levels from 38.5–47 dBm. Rated for -55 to +85°C operation, amplifiers are fully matched internally for input and output at 50 Ω. Read More

Electronic Components & Devices

E-Band Driver Amplifier targets point-to-point radios.

October 15, 2014

Delivering typical Psat of 24 dBm for 71-76 GHz and 81-86 GHz frequency ranges in single product, 4-stage Model MAAM-011167 is suited for high capacity macro cell and small cell backhaul point-to-point radios. Bare die power amplifier supports 18 dB of small signal gain with variable gain control for flexible performance tuning. Integrated power detector enables customers to avoid extra loss that is associated with discrete power detectors. Read More

Electronic Components & Devices

RF Power Amplifier suits base station applications.

August 1, 2014

Delivering up to 1,000 W PEP power into 50 Ω load over frequency range of 225–400 MHz, Model KAW5050 comprises power amplifier, controller sub-system, and AC power supply encased in 3 RU shelf. Class AB wideband system weighs 50 lb and mounts into standard 19 in. equipment rack. It can be operated and monitored remotely via RS232 or Ethernet control. Read More

Mechanical Power Transmission, Electronic Components & Devices

Operational Amplifier drives heavy loads at high output.

June 25, 2014

Delivering over 1 A output current, 40 V Model ADA4870 provides wide bandwidth of 52 MHz and slew rate of 2,500 V/µs to facilitate high-voltage pulses necessary to drive piezoelectric transducer in high-intensity focused ultrasound for medical treatment and procedures. In small-cell base stations and compact military radios, op amp assists with drive of power amplifier’s low impedance bias control to track envelope of RF signal, only using as much power for PA as needed to pass signal. Read More

Electronic Components & Devices

High Gain Amplifiers suit commercial/military radar applications.

April 24, 2014

Supplied in hermetically sealed, metal enclosures, L and S band high gain amplifiers cover 1.2–1.4 GHz and 3.1–3.5 GHz frequency ranges used for commercial and military radar applications as well as observation satellites and communications systems. These RF amplifiers utilize hybrid microwave IC design and advanced GaAs pHEMT technology to produce unconditionally stable module. Other features include built-in voltage regulation, bias sequencing, and reverse bias protection. Read More

Electronic Components & Devices

Broadband Amplifiers suit applications from 2-18 GHz.

April 17, 2014

Offered in 1 W and 2 W models, Broadband RF Amplifiers utilize hybrid microwave integrated circuit and advanced GaAs pHEMT technology. Connectorized SMA modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection. Featuring hermetically sealed design, amplifiers operate from -55 to +85°C with gain from 32–48 dB, gain flatness from ±1 dB to ±2 dB at 12–18 GHz range, and linearity levels from 39–42 dBm. Read More

Electronic Components & Devices

Broadband RF Gain Blocks offer up to 24 dB gain, 40 dBm OIP3.

November 22, 2013

Analog Devices, Inc., ADL5544/ADL5545/ADL5610/ADL5611 single-ended RF/IF gain block amplifiers operate from 30 MHz to 6 GHz and offer up to 24 dB gain and 40 dBm third-order intercept point (OIP3). Stable over frequency, temperature, and power supply, products integrate bias control circuits, are fabricated on InGaP HBT process, and come in SOT-89 packages. Features include ESD ratings of ±1.5 kV (Class 1C) and internal matching to 50 Ω at input and output. Read More

Communication Systems & Equipment, Mechanical Power Transmission, Electronic Components & Devices

Line Amplifiers support DOCSIS 3.1 systems.

October 30, 2013

Available in 12 and 24 V models, Models ACA1210, ACA1212, ACA1216, ACA2431, ACA2449, and ACA2461 provide signal fidelity over extended frequencies up to 1.2 GHz. Surface mount devices deliver optimal bit error rate, composite triple beat, composite second order, cross modulation, and carrier-to-intermodulation noise characteristics in fully loaded spectrum. Series leverages GaAs MESFET process for reliability along with GaN HEMT technology for high output power and optimum power efficiency. Read More

Electronic Components & Devices, Optics & Photonics

RF Power Amplifier integrates linearization technology.

August 1, 2013

Designed for half-duplex RF transceivers with amplitude-modulated waveforms, Xtender™ Linear Bidirectional S-Band Power Amplifier module, Model NW-LBSSPA-10W-2.2-2.5, generates 6 W of average RF output power from 2,200–2,500 MHz, given 10 dB peak-to-average power ratio waveform. With continuous wave signals, amplifier generates 10 W of RF output power. Automatic transmit sensing circuitry provides nearly instantaneous switching between receive and transmit modes, at less than 2 µs. Read More

Electronic Components & Devices

RF Power Amplifier is suited for 3G/4G small-cell base stations.

June 10, 2013

Operating in 2,100–2,170 MHz frequency band, ASC7517 delivers 1.4 W of power using 2.85 and 5 V supply while operating with power efficiency of 28%. Multistage PA, used in predistortion system, uses Doherty architecture and supports ACLR requirements of WCDMA, HSPA, and LTE systems without compromising efficiency. Product also provides 42 dB of RF gain, eliminating need for driver amplifiers. Supplied in 8 x 14 x 1.3 mm SMT package, PA integrates RF matching and power combining circuit. Read More

Electronic Components & Devices

Broadband RF Gain Blocks operate over 30 MHz to 6 GHz range.

June 5, 2013

Supplied in SOT-89 package, single-ended RF amplifiers ADL5544/ADL5545/ADL5610/ADL5611 facilitate design of communications, defense, and instrumentation systems. Class 1C (+1.5 kV ESD)-rated products integrate on-chip bias circuit and are internally matched to 50Ω at input and output. Depending on model, OIP3 values range from 34.9–38.5 dBm and P1dB noise figures range from 17.6–21.0. Only external components required are coupling/decoupling capacitors and DC bias inductor. Read More

Electronic Components & Devices

Bidirectional RF Power Amplifier has transmit sensing circuitry.

May 10, 2013

Designed for use with half-duplex RF transceivers running constant-envelope waveforms, NuPower Xtender™ Bidirectional L- and S-Band PA module (model NW-BSSPA-10W-1.0-2.5) provides 10 W peak min RF output power and 40 dB of gain with 30% average power efficiency from 1,000–2,500 MHz. Adjacent radio frequency bands, such as 900 MHz ISM band, are supported at lower peak power levels. Nickel-plated aluminum chassis occupies 3.00 x 2.00 x 1.15 in. and weighs <6 oz. Read More

Communication Systems & Equipment, Electronic Components & Devices

Surface Mount Line Amplifiers target CATV systems in Asia.

March 27, 2013

Based on GaAs MESFET process, 24 V Models ACA2460E, ACA2461E, and ACA2462E provide 22, 25, and 28 dB of gain, respectively, providing performance required to design systems up to 1 GHz. MMIC line amplifiers feature low composite triple beat, composite second order, and cross modulation distortion characteristics for optimal performance in fully loaded spectrum. Thermal characteristics of SOIC package platform minimize heat sink requirements. Read More

Electronic Components & Devices

Linear GaN Amplifier supports X-band MILSATCOM service.

March 19, 2013

Housed in 32 lb package measuring 6.8 x 10.5 x 17 in., Model XTSLIN-100X-B1 includes integrated BUC, output isolator, and harmonic filter. High-power unit features 100 W of WGS linear power and draws only 750 W of prime power at linear RF output. Amplifier supports critical multi-carrier X-band operation with extremely low leakage levels in receive band, even for case with SSPA in view of antenna and feed. Read More

Electronic Components & Devices

Solid-State RF Amplifiers come in 200 W and 400 W models.

December 13, 2012

Covering 10 kHz to 400 MHz frequency range, Models 200A400 and 400A400 deliver power required for applications using MIL-STD, DO 160, and other automotive standards. Each amplifier utilizes linear devices in all high power stages to minimize distortion and optimize stability. Providing local and remote control of amplifier, Digital Control Panel displays operational presentation of Forward Power and Reflected Power plus control status and reports of internal amplifier status. Read More