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Electronic Components & Devices -> Electronic Amplifiers -> RF Amplifiers


RF Amplifiers




(Showing headlines 1 - 20)   more ....
RF Power Amplifier suits base station applications.

RF Power Amplifier suits base station applications.

AR Modular RF    Bothell, WA 98011
Aug 01, 2014 Delivering up to 1,000 W PEP power into 50 Ω load over frequency range of 225–400 MHz, Model KAW5050 comprises power amplifier, controller sub-system, and AC power supply encased in 3 RU shelf. Class AB wideband system weighs 50 lb and mounts into standard 19 in. equipment rack. It can be operated and monitored remotely via RS232 or Ethernet control.

Operational Amplifier drives heavy loads at high output.

Operational Amplifier drives heavy loads at high output.

Analog Devices, Inc.    Norwood, MA 02062-9106
Jun 25, 2014 Delivering over 1 A output current, 40 V Model ADA4870 provides wide bandwidth of 52 MHz and slew rate of 2,500 V/µs to facilitate high-voltage pulses necessary to drive piezoelectric transducer in high-intensity focused ultrasound for medical treatment and procedures. In small-cell base stations and compact military radios, op amp assists with drive of power amplifier’s low impedance bias control to track envelope of RF signal, only using as much power for PA as needed to pass signal.

High Gain Amplifiers suit commercial/military radar applications.

High Gain Amplifiers suit commercial/military radar applications.

Pasternack Enterprises    Irvine, CA 92614
Apr 24, 2014 Supplied in hermetically sealed, metal enclosures, L and S band high gain amplifiers cover 1.2–1.4 GHz and 3.1–3.5 GHz frequency ranges used for commercial and military radar applications as well as observation satellites and communications systems. These RF amplifiers utilize hybrid microwave IC design and advanced GaAs pHEMT technology to produce unconditionally stable module. Other features include built-in voltage regulation, bias sequencing, and reverse bias protection.

Broadband Amplifiers suit applications from 2-18 GHz.

Broadband Amplifiers suit applications from 2-18 GHz.

Pasternack Enterprises    Irvine, CA 92614
Apr 17, 2014 Offered in 1 W and 2 W models, Broadband RF Amplifiers utilize hybrid microwave integrated circuit and advanced GaAs pHEMT technology. Connectorized SMA modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection. Featuring hermetically sealed design, amplifiers operate from -55 to +85°C with gain from 32–48 dB, gain flatness from ±1 dB to ±2 dB at 12–18 GHz range, and linearity levels from 39–42 dBm.

Broadband RF Gain Blocks offer up to 24 dB gain, 40 dBm OIP3.

Broadband RF Gain Blocks offer up to 24 dB gain, 40 dBm OIP3.

Richardson Electronics, Ltd.    La Fox, IL 60147
Nov 22, 2013 Analog Devices, Inc., ADL5544/ADL5545/ADL5610/ADL5611 single-ended RF/IF gain block amplifiers operate from 30 MHz to 6 GHz and offer up to 24 dB gain and 40 dBm third-order intercept point (OIP3). Stable over frequency, temperature, and power supply, products integrate bias control circuits, are fabricated on InGaP HBT process, and come in SOT-89 packages. Features include ESD ratings of ±1.5 kV (Class 1C) and internal matching to 50 Ω at input and output.

Line Amplifiers support DOCSIS 3.1 systems.

Anadigics, Inc.    Warren, NJ 07059
Oct 30, 2013 Available in 12 and 24 V models, Models ACA1210, ACA1212, ACA1216, ACA2431, ACA2449, and ACA2461 provide signal fidelity over extended frequencies up to 1.2 GHz. Surface mount devices deliver optimal bit error rate, composite triple beat, composite second order, cross modulation, and carrier-to-intermodulation noise characteristics in fully loaded spectrum. Series leverages GaAs MESFET process for reliability along with GaN HEMT technology for high output power and optimum power efficiency.

RF Power Amplifier integrates linearization technology.

RF Power Amplifier integrates linearization technology.

NuWaves Engineering    Middletown, OH 45044
Aug 01, 2013 Designed for half-duplex RF transceivers with amplitude-modulated waveforms, Xtender™ Linear Bidirectional S-Band Power Amplifier module, Model NW-LBSSPA-10W-2.2-2.5, generates 6 W of average RF output power from 2,200–2,500 MHz, given 10 dB peak-to-average power ratio waveform. With continuous wave signals, amplifier generates 10 W of RF output power. Automatic transmit sensing circuitry provides nearly instantaneous switching between receive and transmit modes, at less than 2 µs.

RF Power Amplifier is suited for 3G/4G small-cell base stations.

Anadigics, Inc.    Warren, NJ 07059
Jun 10, 2013 Operating in 2,100–2,170 MHz frequency band, ASC7517 delivers 1.4 W of power using 2.85 and 5 V supply while operating with power efficiency of 28%. Multistage PA, used in predistortion system, uses Doherty architecture and supports ACLR requirements of WCDMA, HSPA, and LTE systems without compromising efficiency. Product also provides 42 dB of RF gain, eliminating need for driver amplifiers. Supplied in 8 x 14 x 1.3 mm SMT package, PA integrates RF matching and power combining circuit.

Broadband RF Gain Blocks operate over 30 MHz to 6 GHz range.

Analog Devices, Inc.    Norwood, MA 02062-9106
Jun 05, 2013 Supplied in SOT-89 package, single-ended RF amplifiers ADL5544/ADL5545/ADL5610/ADL5611 facilitate design of communications, defense, and instrumentation systems. Class 1C (+1.5 kV ESD)-rated products integrate on-chip bias circuit and are internally matched to 50Ω at input and output. Depending on model, OIP3 values range from 34.9–38.5 dBm and P1dB noise figures range from 17.6–21.0. Only external components required are coupling/decoupling capacitors and DC bias inductor.

Bidirectional RF Power Amplifier has transmit sensing circuitry.

Bidirectional RF Power Amplifier has transmit sensing circuitry.

NuWaves Engineering    Middletown, OH 45044
May 10, 2013 Designed for use with half-duplex RF transceivers running constant-envelope waveforms, NuPower Xtender™ Bidirectional L- and S-Band PA module (model NW-BSSPA-10W-1.0-2.5) provides 10 W peak min RF output power and 40 dB of gain with 30% average power efficiency from 1,000–2,500 MHz. Adjacent radio frequency bands, such as 900 MHz ISM band, are supported at lower peak power levels. Nickel-plated aluminum chassis occupies 3.00 x 2.00 x 1.15 in. and weighs <6 oz.

Surface Mount Line Amplifiers target CATV systems in Asia.

Anadigics, Inc.    Warren, NJ 07059
Mar 27, 2013 Based on GaAs MESFET process, 24 V Models ACA2460E, ACA2461E, and ACA2462E provide 22, 25, and 28 dB of gain, respectively, providing performance required to design systems up to 1 GHz. MMIC line amplifiers feature low composite triple beat, composite second order, and cross modulation distortion characteristics for optimal performance in fully loaded spectrum. Thermal characteristics of SOIC package platform minimize heat sink requirements.

Linear GaN Amplifier supports X-band MILSATCOM service.

Comtech Xicom Technology, Inc.    Santa Clara, CA 95054
Mar 19, 2013 Housed in 32 lb package measuring 6.8 x 10.5 x 17 in., Model XTSLIN-100X-B1 includes integrated BUC, output isolator, and harmonic filter. High-power unit features 100 W of WGS linear power and draws only 750 W of prime power at linear RF output. Amplifier supports critical multi-carrier X-band operation with extremely low leakage levels in receive band, even for case with SSPA in view of antenna and feed.

Solid-State RF Amplifiers come in 200 W and 400 W models.

Solid-State RF Amplifiers come in 200 W and 400 W models.

AR RF/Microwave Instrumentation    Souderton, PA 18964
Dec 13, 2012 Covering 10 kHz to 400 MHz frequency range, Models 200A400 and 400A400 deliver power required for applications using MIL-STD, DO 160, and other automotive standards. Each amplifier utilizes linear devices in all high power stages to minimize distortion and optimize stability. Providing local and remote control of amplifier, Digital Control Panel displays operational presentation of Forward Power and Reflected Power plus control status and reports of internal amplifier status.

Power Amplifier targets Band 8 WCDMA and LTE applications.

Anadigics, Inc.    Warren, NJ 07059
Dec 05, 2012 Leveraging InGaP-Plus™ technology, Model AWB7129 is optimized for WCDMA, HSPA, and LTE small-cell base stations operating in 925–960 MHz frequency band. Amplifier delivers 15% efficiency with linearity of -47 dBc ACPR at ±10 MHz offset, +24.5 dBm linear output power, and 30 dB gain. Housed in 7 x 7 x 1.3 mm surface mount package with integrated RF matching, amplifier is suitable for picocells, femtocells, and high-performance customer premise equipment.

GaN Line Amplifier MMIC targets CATV applications.

Anadigics, Inc.    Warren, NJ 07059
Oct 23, 2012 Delivering +58 dBm output power and 21 dB gain at 1 GHz, Model ACA2428 is optimized for 50–1,000 MHz frequency band applications. Power doubler line amplifier ensures distortion-free video and audio in 1 GHz CATV systems.  Available in 16-lead SOIC, device is powered through center tap of output impedance transformer with +24 V supply. Low composite triple beat, composite second order, cross modulation, and noise figure distortion characteristics optimize performance in fully loaded spectrum.

Solid-State Amplifiers cover 0.8-4.2 GHz frequency range.

AR RF/Microwave Instrumentation    Souderton, PA 18964
Aug 30, 2012 Offering 525 W and 700 W of RF power, respectively, Models 525S1G4 and 700S1G4 are 24U high and utilize state-of-the-art circuitry to minimize distortion. Each is equipped with Digital Control Panel, which enables both local and remote control of amplifier. Display provides operational presentation of Forward Power and Reflected Power plus control status and reports of internal amplifier status. Special features include gain control and RF output level protection.

WCDMA/LTE Power Amplifiers offer low- and high-power efficiency.

Anadigics, Inc.    Warren, NJ 07059
Jun 29, 2012 ProEficient(TM) WCDMA/LTE power amplifiers maximize talk time in low-power mode while allowing long-term data application use in high-power mode. Suitable for smartphones and tablet devices, units maximize 4G battery-life without use of DC-DC converter. Depending on model, amplifiers operate over frequency ranges of 880-915 MHz to 1,920-1,980 MHz, and in bands 1, 2, 3/4/9/10, 5, and 8. Products, contained in 3 x 3 mm package, include internal voltage regulation and DC blocks on RF ports.

Tunable RF Driver Amplifier (1 W) is optimized for linearity.

Tunable RF Driver Amplifier (1 W) is optimized for linearity.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Jun 08, 2012 Intended for MILCOM and infrastructure applications, MAAM-010617 comes in Pb-free SOT-89 package and is tunable over 30-4,000 MHz range to optimize performance based on end requirements. This 30 dBm GaAs MMIC amplifier, biased with single +5 V supply, has quiescent current of 420 mA and is fabricated using HBT process. Operating bandwidth can be optimized with selective off-chip components. Properties include 13 dB gain, 4.5 dB noise figure and 18 dB return loss for input and output.

RF Driver Amplifier IC features dynamically adjustable bias.

Analog Devices, Inc.    Norwood, MA 02062-9106
Apr 25, 2012 Operating over temperature range of -40 to +105°C, ˝ Watt Model ADL5324 can be biased from 3.3-5 V, enabling RF designer to adjust power consumption to required system performance without need for bias resistor. Device features low power consumption of 62 mA on 3.3 V and up to 133 mA on 5 V. Available in SOT-89 package, amplifier operates over frequency range of 400-4,000 MHz with OIP3 of 43 dBm, P1dB of 29 dBm, gain of 14.6 dB, and low noise figure of 3.8 dB at 2,140 MHz.

RF Wireless Modules target mobile phone applications.

RF Wireless Modules target mobile phone applications.

Murata Electronics North America, Inc.    Smyrna, GA 30080
Dec 02, 2011 Comprising SAW filter, power amplifier, and magnetic stabilizer in single 6.6 x 3.8 x 1.0 mm package, HFQPRAPCA Series supports Bands 5, 1, 25, and 13. Magnetic stabilizer, providing same function as isolator, enables modules to remain stable by controlling characteristics of load fluctuation caused by changes in impedance that can occur when user's hand, metal object, or other materials come close to antenna.




(Showing headlines 1 - 20)   more ....


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