Power Amplifiers

Electronic Components & Devices

RF PA Module (10 W) works with L- and S-band equipment.

October 5, 2015

Supplied in 3.00 x 2.00 x 0.65 in. aluminum chassis with +85°C max baseplate temperature rating, NuPower™ 12B01A (Part No. NW-PA-12B01A) provides RF amplification for transmitters, transceivers, and data links that do not require linear performance. This broadband RF power amplifier (PA) for L- and S-band equipment delivers 10 W min and 13 W typ of RF power from 1,000–2,500 MHz when sourced with 0 dBm (1 mW) RF input signal. Power efficiency ranges from 30%–50%, and RF gain is 40 dB. Read More

Electronic Components & Devices

Solid-State Power Amplifier delivers 1 kW output.

September 15, 2015

Operating over 1,200 MHz bandwidth centered at 9.5 GHz, X-band Model DM-X1K0-01 measures just 244 x 134 x 50 mm excluding heatsink and connectors, making it suitable for use as alternative to traveling wave tube amplifier. GaN-based pulsed SSPA employs chip-and-wire design and supports demanding defense, aerospace, and communications applications. Read More

Electronic Components & Devices, Mechanical Power Transmission

GaN Power Amplifiers boast high power and high gain.

September 11, 2015

Featuring high gain levels from 43–60 dB across frequency bands of 30 MHz to 7.5 GHz, GaN Coaxial Power Amplifiers provide saturated output power levels from 10–100 W with 20–35% Power Added Efficiency. Thermal efficiency of GaN technology enables assemblies to be integrated into compact coaxial packages. All are equipped with single voltage supplies which are internally regulated. Devices' 50 Ω input/output matched designs are adaptable to range of power and modulation requirements. Read More

Electronic Components & Devices

RF Power Amplifiers offer 0.5 MHz to 20 GHz frequency range.

July 30, 2015

Designed to operate over extreme temperatures of -55 to +85°C, High-Rel Power Amplifiers are suited for electronic warfare, military communications, radar, point-to-point radio, telecom, test and measurement, medical, and SATCOM industries. Units generate saturated output power levels up to 100 W and all models require only single positive voltage supply ranging from +12 to +42 Vdc. Small signal gain levels range from 11–58 dB with IP3 linearity up to +66 dBm. Read More

Electronic Components & Devices

High Power Amplifiers cover 150 kHz to 7,500 MHz frequencies.

June 10, 2015

Covering UHF, VHF, L, S, and C frequency bands, High Power Amplifiers come in 22 models with output power levels greater than 10 W. Solid state 50 Ω hybrid MIC designs use GaN, GaAs, or LDMOS transistor technology that allows gain levels from 40–60 dB. Typical gain variation is ±1.5 dB. Enclosed in environmentally sealed coaxial metal packages, RF amplifiers include models with output P1dB levels from +10 to +50 W and models with output saturated power levels ranging from +40 to +50 dBm. Read More

Electronic Components & Devices

Power Amplifiers support communications, jamming applications.

May 20, 2015

Supplied in 19 in. enclosure, QBS-620 rackmount GaN power amplifier module consists of 2 identical channels, each containing 200 W Amp, VHF and UHF switched harmonic filter banks, SP3T switches, controller, and AC/DC power supply. Along with LDMOS technology, QBS-617 utilizes balanced architecture with isolator on output and comes with temperature compensation, forward/reverse power detection, VSWR monitor, and thermal shutdown. Output power is 100 W min at 1 dB compression with gain of 52 dB. Read More

Electronic Components & Devices

Solid State Power Amplifier operates in pulsed or CW mode.

May 20, 2015

Operating over 1,700 MHz bandwidth centered at 8.5 GHz, GaN-based Model DM-X100-01 delivers 100 W peak pulsed power output. Core microwave assembly consists of chip-and-wire design in slim, low-profile housing. Flexible in layout and architecture, X-band amplifier is fully customizable to meet individual specifications for electrical, mechanical, and environmental parameters. Device is suited for demanding defense, aerospace, and communications applications. Read More

Electronic Components & Devices

Power Ku-Band MMIC HPA covers commercial satcom band.

May 5, 2015

Available in 25 x 9.6 mm, 10-lead, metal/ceramic flanged package (CMPA1D1E025F) or as bare die (CMPA1D1E030D), 50 Ω Ku-Band MMIC (monolithic microwave integrated circuit) high power amplifier (HPA) covers 13.5–14.75 GHz band and operates at 40 V VDD. This 30 W GaN MMIC 2-stage HPA delivers satcom measured performance of 20 dB linear gain at 42 dBm average output power while maintaining linearity under -33dBc OQPSK signal and with adjacent channel power at drain efficiency of 20%. Read More

Electronic Components & Devices, Mechanical Power Transmission

Broadband MMIC GaN LNA meets high-RF power survivability needs.

April 29, 2015

Fabricated in GaN technology and supplied in leadless, 4 x 4 mm, ceramic package, CMD219C4 broadband MMIC low-noise amplifier (LNA) operates from 4–8 GHz with gain of 22.5 dB, noise figure of 1.0 dB, and output 1 dB compression point of +17 dBm. Product withstands RF input power levels of up to 5 W without permanent damage. Areas of use include microwave radios and C-band applications, such as point-to-point and point-to-multi-point radios, military and space, and test instrumentation. Read More

Test & Measuring Instruments, Electronic Components & Devices

Test System meets immunity testing requirements.

April 9, 2015

Combining signal generator and integrated power amplifier, Model NSG 4060 meets requirements for immunity testing to low frequency disturbances in frequency range of 15 Hz to 150 kHz. Disturbances are coupled onto cables in common mode (IEC/EN 61000-4-16) with continuous levels up to 33 V or differential mode (IEC/EN 61000-4-19) with levels up to 22 V/4.5 A. System includes user port for 4 TTL inputs and 4 TTL outputs as well as supply voltages for individual monitoring and control applications. Read More

Electronic Components & Devices

High Power Amplifier integrates power detector.

April 9, 2015

Designed specifically for 18 GHz wireless backhaul applications, Model MAAP-011145 covers 17.6–19.75 GHz frequency band and delivers over 2 W output power at 1 dB compression point. Device provides 25 dB small signal gain, OIP3 of 43 dBm, noise figure of 7 dB, and 34.5 dBm of saturated output power. Housed in 7 mm, lead-free cavity package, amplifier features temperature compensated integrated power detector as well as ESD protection and by-pass capacitors. Read More

Electronic Components & Devices, Optics & Photonics

Transimpedance Amplifier suits coherent receiver applications.

April 8, 2015

With power dissipation of 300 mW per channel, Model MATA-003806 is suited for next generation of micro Integrated Coherent Receivers for metro applications at 100 Gbps and beyond. Dual-channel linear TIA has transimpedance gain which can be adjusted from 100 Ω up to 10 KΩ with manual and automatic gain control modes of operation. Input and output peak detectors are available for RSSI and AGC functionality. Read More

Electronic Components & Devices, Electrical Equipment & Systems

Isolated Gate Driver suits high power density applications.

April 3, 2015

Aimed at high-density power converters, motor drives, and actuators based on SiC transistors, power MOSFETs, and IGBTs, HADES® v2 chipset uses 3 ICs: HADES2P on primary side, HADES2S on secondary, and quad-diode ELARA. Unit includes all functions to drive gates of power switches in isolated, high voltage half bridge. HADES® is available in hermetic packages for extreme temperature applications up to 225°C, as well as in plastic packages for systems where temperature does not exceed 175°C. Read More

Electronic Components & Devices

Power Amplifier Module targets WLAN applications.

March 25, 2015

Designed for Wi-Fi 802.11ac access points, routers, and STBs, 5 GHz Model SST11CP22 delivers 19 dBm linear output power at 1.8% dynamic EVM with MCS9 80 MHz bandwidth modulation. Device also provides 20 dBm linear power at 3% EVM for 802.11a/n applications, is spectrum mask compliant up to 24 dBm for 802.11a communication, and has less than -45 dBm/MHz RF harmonic output. Housed in 4 x 4 mm, 20-pin QFN package, amplifier includes output harmonic rejection filter and is 50 Ω-matched. Read More

Communication Systems & Equipment, Electronic Components & Devices

Traveling Wave Tube Amplifiers suit uplink applications.

March 16, 2015

Based on SuperPower technology, XTD-2000KHE Ku-band TWTA provides 750 W of linear power in compact, rugged package weighing 92 lb and drawing less than 3,200 W of prime power. XTD-1500DBSHE DBS-band TWTA provides 560 W of linear power for direct-to-home applications in same package and draws only 2,500 W of prime power. Designed for SATCOM applications, both are available as outdoor antenna-mount units with operating temperature of -40 to +60°C or as indoor rackmount configurations. Read More

Communication Systems & Equipment, Electronic Components & Devices

Broadband Low Noise Amplifiers range from 30 MHz to 40 GHz.

February 18, 2015

With noise figure levels from 2.5–3 dB typ across entire band, ultra-broadband and millimeter wave low noise amplifiers (LNAs) include 17 unconditionally stable models covering multi-octave bandwidths with flat gain response and GaAs PHEMT semiconductor technology. Features include 50 Ω hybrid MIC circuits enclosed in environmentally sealed metal packages with nickel or gold plating, stainless steel SMA or 2.92 mm connectors, and IP3 levels as high as +42 dBm. Read More

Electronic Components & Devices

S-Band 7 W Pulsed High Power Amplifier features balanced design.

January 21, 2015

Covering 2.7–3.0 GHz from 6 mm PQFN 28-lead SMT package, MAAP-011022 can be used individually or in complete MACOM chipset solution for Civil Air Traffic Control and Weather Radar applications. Encapsulated IC, which offers 7 W of pulsed power and 23 dB small signal gain, provides rugged performance under load mismatch. Other features include +10 V bias operation, 50 Ω impedance, and 0.5 µm pHEMT process. Design is RoHS compliant and 260° reflow compatible. Read More

Electronic Components & Devices

Portable, 3U, 500 W Power Amplifier covers 80-1,000 MHz.

January 21, 2015

Delivering 500 W of broadband output power, Model 2175 comes in air-cooled chassis and provides single RF input and output as well as user-selectable configuration and operation in AGC (Automatic Gain Control), ALC (Automatic Level Control), and MGC (Manual Gain Control) modes. Use of high-voltage RF transistors (LDMOS) lend to ruggedness, while multi-faceted Monitoring and Control (M&C) UIs include Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen. Read More

Electronic Components & Devices

Power Amplifier delivers 1 kW broadband output power.

January 21, 2015

Housed in 5U, air-cooled chassis, Model 2170 features single RF input and output operating over 1-3 GHz frequency range. Unit offers user-selectable configuration and operation in 3 different modes, including Automatic Gain Control, Automatic Level Control, and Manual Gain Control. Equipped with Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen display, amplifier is suitable for test and measurement, electronic warfare, and communications applications. Read More

Communication Systems & Equipment, Electronic Components & Devices

High Linearity 4 W Power Amplifier suits Ka-band applications.

January 20, 2015

Offered in bare die format and 5 x 5 mm, 32-lead QFN package, MAAP-011139 has 29–31 GHz frequency range and delivers 24 dB of linear gain, 4 W of saturated output power, and 23% efficiency. This high-linearity power amplifier, suited for Ka-band, high-data density satellite communications, provides >27 dBm Pout/tone while maintaining IM3 levels of 30 dBc. Rating for input and output return loss is 10 dB. Read More