Cap Wireless, Inc.
Newbury Park, CA 91320
Oct 07, 2008 Solid-state KS5388 power amplifier is suited for use as broadband driver or moderate power output stage in instrumentation and electronic warfare (EW) simulation. Combining high-frequency GaAs performance with high-power, high-temperature cofired ceramic device packaging, it achieves 5 W power amplification from 6-18 GHz and features 37 dBm output power and 35 dB gain. Copper heat spreader optimizes heat dissipation.

Avago Technologies
San Jose, CA 95131
Sep 29, 2008 Available in bare die or surface mount packaging, AMMC/P-6333 driver amplifiers target wireless communication infrastructure applications, including point-to-point radios, VSAT and fiber to the home. Fabricated using 0.25 um enhancement mode PHEMT technology, amplifiers deliver gain of 20 dB and P1dB of 23 dBm. With 50 W matching and third order intercept point of 30 dBm, they can be used with single positive voltage supply and DC power of 5 V bias at 220 mA.

Richardson Electronics, Ltd.
La Fox, IL 60147
Sep 17, 2008 Featuring 300 W CW output power, 78% collector efficiency, and -40 dB harmonic suppression, Model FM310-108 pallet amplifier is suited for FM transmitter, transposer, and broadcast exciter designs. Available with MRF6V2300NBR1 LDMOS transistor, rugged unit operates from -10 to +60°C. With 23 dB gain, system designers can use low input power of 1.4 W, eliminating one or more gain stages. Connectorized versions are also available.

Cap Wireless, Inc.
Newbury Park, CA 91320
Sep 04, 2008 Employing laterally diffused metal oxide semiconductor device technology, Model US1498 is designed specifically for airborne and fixed location operations. Dual input, single output design provides minimum of 100 W/channel output across frequency range of 290-320 MHz. Packaged in thermally efficient, finned aluminum housing for customer-supplied forced air cooling, device incorporates digital attenuators on each channel for independent power control.

Analog Devices, Inc.
Norwood, MA 02062-9106
Aug 19, 2008 Integrated crest-factor RF power detection IC, ADL5502, combines rms RF detector and envelope detector. Featuring ±0.1 dB accuracy with crest factors up to 11 dBm, it enables cell phone designers to manage wireless handset power, extend battery life, and process complex 3G/4G signals. Logarithmic amplifier, ADL5513, offers 80 dB dynamic range with ±3 dB log conformance up to 4 GHz to help accurately detect and control output power up to WiMAX and Long-Term Evolution frequency bands.

Cap Wireless, Inc.
Newbury Park, CA 91320
Aug 06, 2008 Designed for defense electronics and homeland security industries, CHPA0618-1 ultra-broadband power amplifier incorporates GaAs MMIC technology into Spatium(TM) broadband spatial combining architecture. Unit has multiple element architecture that provides protection from single point failures and enables dispersive, 3D heat dissipation. Featuring 40 W typical saturated power, it includes soft-fail in event of device failure, with no warm-up or turn-on delay.

DyneSystems, Inc
Jackson, WI 53037
Aug 01, 2008 Able to interface with Dyne Systems dynamometer controllers or industrial PCs-/PLC-based controllers running third party software, DS820 intelligent universal Power Amplifier Unit (PAU) displays real-time field current, input command, status, and fault messages on front panel diagnostic LCD. Analog 0-10 Vdc input enables unit to be used as standalone, open-loop eddy current power amp or incorporated into existing test cells with fully integrated closed-loop control units.

Anadigics, Inc.
Warren, NJ 07059
Jul 03, 2008 Operating in 5-85 MHz frequency range, Model ARA2017 supports DOCSIS 3.0-specified signal levels of +64 dBmV while minimizing harmonic distortion and output noise levels. Linear amplifier features 33 dB of RF gain at minimum attenuation, and includes digitally controlled, multi-stage precision step attenuator that provides up to 58 dB of attenuation in 2 dB increments. Requiring single 5 V supply, device is offered in 28-pin 5 x 5 x 1 mm QFN package.

RF Micro Devices, Inc.
Greensboro, NC 27409-9421
Jul 03, 2008 Suited for use as power doubler amplifiers in line amplification and HFC optical nodes, Models D10040200PH1 and D10040230PH1 feature 20 and 23 dB of gain, respectively. Available in industry-standard SOT115J module package, both utilize ultra-linear, high-efficiency GaN process technology, and feature +24 Vdc supply voltage and maximum CTB of -74 dBc and CSO of -68 dBc. Model D10040200PH1 has CIN of 65 dB minimum, while D10040230PH1 has 63 dB minimum.

Tyco Electronics Corp.
Harrisburg, PA 17105-3608
Jul 01, 2008 Supplied in 2 x 2.5 mm, PQFN plastic package, MAAP-008516 is RoHS-compliant, 3-stage, 2.4-2.5 GHz linear power amplifier with typical linear gain of 30 dB at operating voltage of 3.3 V. Integrated power detector promotes accurate power control, while separate power mode pin lends to current savings in power shutdown mode. Respectively, unit generates 16.5 and 21.5 dBm linear output power for 802.11g and 802.11b applications while drawing 80 and 95 mA current.

RF Micro Devices, Inc.
Greensboro, NC 27409-9421
Jun 30, 2008 Based on gallium nitride process technology, 400 W GaN high power amplifiers operate over frequency range of 2.9-3.5 GHz from 65 V supply, delivering power gain of 10.5 dB. Housed in thermally efficient, ceramic hermetically sealed 24 x 17.4 mm package, units offer MTTF of 1E6 hr at 200°C junction temperature. In S-band radar applications, HPAs are combined in larger 2.5 kW pallet amplifier assemblies with as many as 8 or more HPAs utilized in each pallet.

Spectrum Microwave, Inc.
Palm Bay, FL 32905
Jun 26, 2008 Featuring lightweight surface mount package with optional high performance heatsink, QB-900 series of high power amplifiers offer wide band performance of 2-6 GHz, and do not require external circuitry. They include internal blocking caps, biasing circuitry, and RF matching. Units are suited for range of applications including jammers, pre-amp drivers, and other high-end applications.

Amalfi Semiconductor
Los Gatos, CA 95032-5405
Jun 20, 2008 Based on CMOS silicon architecture that minimizes battery's electrical current requirements in cellular phones, quad-band Stratos(TM) AM8901 includes extended efficiency mode and 2,000 V ESD protection on all pins, including RF pins. AdaptiveRF Architecture enables device to achieve optimum performance in all real-world operations. It compensates for drift in performance over time and other factors such as process, temperature, frequency, and voltage.

Avago Technologies
San Jose, CA 95131
Jun 16, 2008 Supplied in 3 x 3 x 0.85 mm, 16-pin QFN package, MGA-30x16 half-watt power amps enable common footprint and PCB layout for base station applications from 750 MHz to 3.9 GHz. Low-voltage power amplifier, ALM-42316, designed for mobile handset and fixed terminals in 3.3-3.8 GHz band, has built-in detector, bypass switch, and shutdown function. It comes in 5 x 5 x 1.1 mm molded chip-on-board package and delivers 23 dBm linear output power and 30 dB gain when operated at 3.3 V and 400 mA.

Instruments For Industry, Inc.
Ronkonkoma, NY 11779
Jun 05, 2008 Measuring 5.25 in. high and weighing less than 45 lb, SMIV ruggedized Solid State Amplifiers incorporate the latest in solid state technology. This unit operates from 400-1,000 MHz as standard at 200 W. Other frequency ranges and power levels are available, and these devices are designed for fixed and mobile applications.

Avago Technologies
San Jose, CA 95131
Jun 03, 2008 Supporting applications from 750 MHz to 3.9 GHz, ALM-31x22 series is comprised of 1 W products that come in 5.0 x 6.0 x 1.1 mm package; consume 400 mA (typ); and suit compact pico or femto-cell base station applications. Also available, 2 W model ALM-32220 is built to support 1.7-2.7 GHz applications and consumes 800 mA. It comes in 7.0 x 10.0 x 1.1 mm, 20-pin package. Optimized for linearity, 1 and 2 W products have built-in active bias circuitry and no RF matching components.

Anadigics, Inc.
Warren, NJ 07059
May 30, 2008 Supporting IMT (UMTS2100) and EGSM (UMTS900) band operations, AWT6224 incorporates HELP3 technology to reduce average current consumption and extend talk time in 3G dual-band handsets used worldwide. Product is supplied in RoHS-compliant, 3 x 5 mm package and meets requirements for WCDMA and HSPA operation with Qualcomm chipsets. Voltage regulator and CMOS-compatible logic controls are built-in, and external dc-dc converter is not required.

Anadigics, Inc.
Warren, NJ 07059
May 30, 2008 Offered in 16-pin SMT package, ACA2420 power doubler line amp ensures optimal video and data delivery in deep fiber HFC architectures and other cable TV deployments that minimize use of cascaded system amps. Combination of output power (+58 dBmV/ch) with minimal distortion meets demands of next generation 1 GHz fiber-deep nodes and system amplifiers. Crash point lets device maintain minimal carrier-to-intermodulation noise, composite triple beat, and composite second order distortion.

RF Micro Devices, Inc.
Greensboro, NC 27409-9421
May 28, 2008 Designed for cable applications, including digital cable-ready televisions and set-top boxes, S518324-44Z programmable-gain upstream power amplifier operates from single 3.3 V supply. Programmable device has operating frequency range of 5-65 MHz, low harmonics of -60 dBc typical at 60 dBmV, and 3-wire serial interface for dynamic range control. Housed in thermally enhanced 4 x 4 mm QFN20 package, it features 63 db dynamic range with 0.5 dB gain step resolution.

Anadigics, Inc.
Warren, NJ 07059
May 20, 2008 Operating from +8 V, Model ABA3101 delivers +34 dBmV/channel of linear output power with 12 dB of RF gain. Unit maintains composite second order and composite triple beat distortion below -69 dBc, and provides less than 3.2 dB across 1 GHz CATV band. Model ABA3115, operating from +5 V supply, provides +25 dBmV/channel and 15 dB of RF gain. GaAs IC operates up to 870 MHz, maintains CSO and CTB distortion below -70 dBc, and provides typical low noise figure of 2.7dB.