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Electronic Components & Devices -> Electronic Amplifiers -> Power Amplifiers

Power Amplifiers

(Showing headlines 1 - 20)   more ....
Klystron Modulator provides pulse fidelity and repeatability.

Klystron Modulator provides pulse fidelity and repeatability.

Diversified Technologies, Inc.    Bedford, MA 01730
Aug 26, 2014 Featuring >0.1% pulse fidelity and repeatability, with 100,000 hr MTBF, DTI PowerMod™ Solid-State Klystron Transmitter is suited for particle accelerators and mission-critical radars. Unit includes PLC-based controller, pulse transformer, high voltage solid-state switch, and required protection circuitry to run Klystron. With peak RF power to 100 mW, amplifier offers pulse widths from 1 µs to 5 mS, repetition rate to 1 KHz, voltage flatness of <1%, and 0.1% reproducibility.

GaN PA in Die Form combines power, linearity, and efficiency.

Custom MMIC    Westford, MA 01886
Aug 26, 2014 Suited for Ku-band communications systems, CMD216 delivers 16 dB of flat gain across entire 14–18 GHz bandwidth, output 1 dB compression point of +37 dBm, and saturated output power of +38 dBm. This power amplifier with fully matched 50 ohm matched design requires bias of Vdd = 28 V, 550 mA, and Vgg = -3.4 V. Power added efficiency is 32% or greater, and external bypass capacitors are only required to complete bias circuitry. Die is passivated for reliability and moisture protection.

RF Power Amplifier suits base station applications.

RF Power Amplifier suits base station applications.

AR Modular RF    Bothell, WA 98011
Aug 01, 2014 Delivering up to 1,000 W PEP power into 50 Ω load over frequency range of 225–400 MHz, Model KAW5050 comprises power amplifier, controller sub-system, and AC power supply encased in 3 RU shelf. Class AB wideband system weighs 50 lb and mounts into standard 19 in. equipment rack. It can be operated and monitored remotely via RS232 or Ethernet control.

X-Band 15 W High Power Amplifier suits radar applications.

X-Band 15 W High Power Amplifier suits radar applications.

M/A-COM, Inc.    Lowell, MA 01853
Jul 30, 2014 Suited for X-band pulsed applications, MAAP-015036 features saturated pulsed output power of 42 dBm, signal gain of 17 dB, and typical 43% power added efficiency. This 2-stage, 8.5–10.5 GHz, GaAs MMIC power amplifier can be biased using direct gate voltage or on-chip gate bias circuit. Dual-sided bias architecture promotes flexible assembly and board design. Specific applications include marine, weather, and surface-movement radar as well as perimeter security and communication links.

Broadband 20 GHz GaN PA is designed for reliability.

Broadband 20 GHz GaN PA is designed for reliability.

Custom MMIC    Westford, MA 01886
Jun 12, 2014 Fabricated on GaN, CMD184 offers bandwidth of 0.5–20 GHz, output 1 dB compression point of >+34 dBm, and flat gain of 13 dB. This broadband 20 GHz GaN power amplifier (PA) requires off-chip bias tee for proper operation. Die offers full passivation for maximum reliability and moisture protection. In addition to microwave radio and VSAT, suitable areas of use include telecom infrastructure, test instrumentation, as well as military and space applications.

Solid-State Power Amplifier operates in pulsed or CW mode.

Diamond Microwave    Leeds   United Kingdom
Jun 12, 2014 Operating from 2–6 GHz, Model DM-SC50-01 offers up to 100 W peak pulsed power and 50 W average power. GaN-based broadband amplifier measures just 120 x 100 x 20 mm, excluding heat sink, and is fully customizable to meet individual specifications for electrical, mechanical, and environmental parameters. Typical applications are found in defense, aerospace, and communications industries.

GaN MMIC PAs suit Ka-band satellite communication terminals.

Northrop Grumman Corp., Space Technology    Redondo Beach, CA 90278
Jun 10, 2014 Developed with GaN HEMT power process, APN228 and APN229 provide respective saturated output power of 13 and 8 W. These broadband, 2-stage amplifiers operate from 27–31 GHz and, when integrated in solid-state power amplifiers (SSPAs), enable increased data rate in communication systems. Respectively, 16.0 mm² APN228 and 7.41 mm² APN229 provide 19.5 and 20 dB linear gain, 41.2 dBm (13 W) and 39 dBm (8 W) saturated output power, and >27% and >30% Power Added Efficiency (PAE).

Broadband Amplifiers suit applications from 2-18 GHz.

Broadband Amplifiers suit applications from 2-18 GHz.

Pasternack Enterprises    Irvine, CA 92614
Apr 17, 2014 Offered in 1 W and 2 W models, Broadband RF Amplifiers utilize hybrid microwave integrated circuit and advanced GaAs pHEMT technology. Connectorized SMA modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection. Featuring hermetically sealed design, amplifiers operate from -55 to +85°C with gain from 32–48 dB, gain flatness from ±1 dB to ±2 dB at 12–18 GHz range, and linearity levels from 39–42 dBm.

Upconverters and Power Amplifiers range from 25-100 W.

Norsat International Inc.    Richmond, BC V6V2N2
Apr 15, 2014 Comprising Ku-band block upconverters and solid state power amplifiers, ATOM Series is available for standard, extended, and custom frequency Ku-bands in 25, 40, 50, and 100 W configurations. Units provide off-the-shelf options, such as wideband, fast switching, and active or passive cooling. Available with custom RF output options from 13.0–17.5 GHz for non-traditional frequencies, devices are suited for portable VSAT, Satcom on the Move, Radar, TWTA replacement, and airborne terminals.

MMIC Power Amplifier operates from DC to 20 GHz.

MMIC Power Amplifier operates from DC to 20 GHz.

Custom MMIC    Westford, MA 01886
Apr 09, 2014 Supplied in die form, Model CMD201 delivers greater than 20 dB of gain from DC to 20 GHz, with corresponding output 1 dB compression point of +29 dBm and output IP3 of +38 dBm at 10 GHz. Distributed power amplifier is suited for microwave radios and VSAT, telecom infrastructure, and test instrumentation, as well as military, space, and fiber optic applications.

Coaxial X Band High Gain PAs suit high linearity applications.

Coaxial X Band High Gain PAs suit high linearity applications.

Pasternack Enterprises    Irvine, CA 92614
Apr 08, 2014 Supplied in 1 and 4 W designs with hermetically-sealed metal enclosures, coaxial X band high gain power amplifiers (PAs) use hybrid microwave IC design and GaAs pHEMT technology that lend to optimized gain (30–41 dB over -30 and +70°C range), gain flatness (0.50–1.0 dB), linearity, and dynamic range performance. IP3 output performs up to 44 dBm, and products are fully matched internally for 50 Ω input and output. Also, connectorized SMA amplifier modules are unconditionally stable.

MMIC Power Amplifier covers full E-band.

M/A-COM, Inc.    Lowell, MA 01853
Mar 24, 2014 Suited for high-bandwidth, long-distance, point-to-point wireless backhaul, MAAP-011106 delivers typ Psat of 25.5 dBm for 71–76 GHz and 81–86 GHz frequency ranges. Product is optimized to enable fiber-caliber data rates of 1 Gbps and higher over extended distances across 10 GHz of available E-Band spectrum to accommodate growing data demand. Fabricated using pHEMT process, amplifier has integrated power detector and supports 20 dB small signal gain with VGC for performance tuning.

Ultrafast Amplifiers deliver greater than 14 W power.

Ultrafast Amplifiers deliver greater than 14 W power.

Spectra-Physics, Inc.    Mountain View, CA 94043
Feb 14, 2014 Suited for research applications, Spitfire® Ace™ PA Power Amplifier delivers >14 W output power at 5 kHz and >12 W at 1 and 10 kHz repetition rates, while Spitfire Ace Regenerative Amplifier provides >7 W at 5 kHz and >6 W at 1 and 10 kHz. Spirit-NOPA automated non-collinear optical parametric amplifier, when used with Spirit™ ultrafast laser, creates system that is tunable from 250–900 nm and capable of generating sub-20 fs pulses with user-adjustable repetition rates from single shot to 1 MHz.

Solid-State Power Amplifiers suit X-band applications.

CTT Inc.    Sunnyvale, CA 94089
Dec 27, 2013 As traveling wave tube replacement, Model AGW-110-4760 provides minimum CW output power of 50 W across entire 7.0–11.0 GHz frequency range. Amplifier features 60 dB of gain and 47 dBm of CW power saturation. Model AGW-110-5056-P, providing up to 100 W of pulse power at selected 1 GHz segments of 7.0–11.0 GHz frequency band, features 56 dB of gain and 50 dBm of pulsed saturated power. Both GaN-based devices come in 4.32 x 4.5 x 0.68 in. package as well as rackmount configurations.

Power Amplifiers feature ultra-wideband capability.

Giga-tronics, Inc.    San Ramon, CA 94583
Nov 21, 2013 Designed using broadband MMIC technology, GT-1000B option 06 and GT-1050B/GT-1051B Solid-State Microwave Power Amplifiers cover 100 MHz to 20 GHz and 10 MHz/2 GHz to 50 GHz, respectively. Model GT-1000B option 06 provides 5 W from 100 MHz to 18 GHz, while Models GT-1050B/GT-1051B deliver ½ W (+27 dBm) at 40 GHz and ¼ W (+24 dBm) at 50 GHz. With ±3.5 dB typical gain flatness, amplifiers are suited for spectrum analyzers and EMC receivers.

Line Amplifiers support DOCSIS 3.1 systems.

Anadigics, Inc.    Warren, NJ 07059
Oct 30, 2013 Available in 12 and 24 V models, Models ACA1210, ACA1212, ACA1216, ACA2431, ACA2449, and ACA2461 provide signal fidelity over extended frequencies up to 1.2 GHz. Surface mount devices deliver optimal bit error rate, composite triple beat, composite second order, cross modulation, and carrier-to-intermodulation noise characteristics in fully loaded spectrum. Series leverages GaAs MESFET process for reliability along with GaN HEMT technology for high output power and optimum power efficiency.

GaN-Based 1.2 GHz Power Doubler Amplifier supports DOCSIS 3.1.

RFMD Inc.    Greensboro, NC 27409
Oct 28, 2013 Gallium Nitride (GaN)-based RFCM3316 allows cable operators and MSOs to upgrade existing CATV infrastructure to meet power amplifier requirements of DOCSIS 3.1 standard, increasing downstream data rates from to 10 Gbps and upstream data rates to 1 Gbps. Offering drop-in replacement for RFCM2680, this SMT multi-chip module operates from 40–1,200 MHz and provides output level of 60 dBmV under 1.2 GHz channel loading with <10-10 BER and 42 dB MER and -80 dB CTB and -80 dB CSO.

C-Band 8 W GaAs MMIC Amplifier comes in plastic package.

C-Band 8 W GaAs MMIC Amplifier comes in plastic package.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Sep 18, 2013 Operating over 5.2–5.9 GHz bandwidth, MAAP-011027 offers fully matched solution that can be used as power amplifier stage or driver stage in high power pulsed applications. This 2-stage, 8 W saturated C-band power amplifier with 37% power added efficiency is supplied in lead (Pb)-free, 5 x 5 mm, 20-lead PQFN package and suits C-Band radar and communication applications. Parameters include 20 dB gain, input and output return loss of 10 dB, and 9 dBm PSAT.

Power Amplifiers maintain stable 3G and 4G connections.

Anadigics, Inc.    Warren, NJ 07059
Sep 11, 2013 Leveraging InGaP-Plus™ technology, ProVantage™ power amplifiers deliver efficiency and linearity needed to extend battery life and ensure high data throughput in LTE, WCDMA/HSPA, CDMA/EVDO, and TD-SCDMA mobile devices. Along with shutdown mode and internal voltage regulation, devices each offer 3 selectable bias modes to optimize efficiency for output power levels. Efficiencies include 48% @ +28.2, 28.5, and 28.6 dBm (WCDMA); 47% @ +28.5 dBm (WCDMA); and 42% @ +27.7 dBm (LTE).

MMIC 10 W Power Amplifier serves 2-6 GHz broadband applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Aug 07, 2013 Intended for high-power broadband applications, MAAP-010169 is 2-staged amplifier operating from 2–6 GHz. It is fully matched for input and output at 50 Ω, eliminating need for sensitive external RF tuning components. Fabricated using high-reliability pHEMT process, this MMIC power amplifier provides nominal Gain of 18 dB with respective input and output return loss of 8 and 10 dB. Other characteristics include 38 dBm P1db, 40 dBm PSAT, 10 V bias operation, and -0.56 gate bias.

(Showing headlines 1 - 20)   more ....

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