Power Amplifiers

Communication Systems & Equipment, Electronic Components & Devices

Broadband Low Noise Amplifiers range from 30 MHz to 40 GHz.

February 18, 2015

With noise figure levels from 2.5–3 dB typ across entire band, ultra-broadband and millimeter wave low noise amplifiers (LNAs) include 17 unconditionally stable models covering multi-octave bandwidths with flat gain response and GaAs PHEMT semiconductor technology. Features include 50 Ω hybrid MIC circuits enclosed in environmentally sealed metal packages with nickel or gold plating, stainless steel SMA or 2.92 mm connectors, and IP3 levels as high as +42 dBm. Read More

Electronic Components & Devices

S-Band 7 W Pulsed High Power Amplifier features balanced design.

January 21, 2015

Covering 2.7–3.0 GHz from 6 mm PQFN 28-lead SMT package, MAAP-011022 can be used individually or in complete MACOM chipset solution for Civil Air Traffic Control and Weather Radar applications. Encapsulated IC, which offers 7 W of pulsed power and 23 dB small signal gain, provides rugged performance under load mismatch. Other features include +10 V bias operation, 50 Ω impedance, and 0.5 µm pHEMT process. Design is RoHS compliant and 260° reflow compatible. Read More

Electronic Components & Devices

Portable, 3U, 500 W Power Amplifier covers 80-1,000 MHz.

January 21, 2015

Delivering 500 W of broadband output power, Model 2175 comes in air-cooled chassis and provides single RF input and output as well as user-selectable configuration and operation in AGC (Automatic Gain Control), ALC (Automatic Level Control), and MGC (Manual Gain Control) modes. Use of high-voltage RF transistors (LDMOS) lend to ruggedness, while multi-faceted Monitoring and Control (M&C) UIs include Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen. Read More

Electronic Components & Devices

Power Amplifier delivers 1 kW broadband output power.

January 21, 2015

Housed in 5U, air-cooled chassis, Model 2170 features single RF input and output operating over 1-3 GHz frequency range. Unit offers user-selectable configuration and operation in 3 different modes, including Automatic Gain Control, Automatic Level Control, and Manual Gain Control. Equipped with Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen display, amplifier is suitable for test and measurement, electronic warfare, and communications applications. Read More

Communication Systems & Equipment, Electronic Components & Devices

High Linearity 4 W Power Amplifier suits Ka-band applications.

January 20, 2015

Offered in bare die format and 5 x 5 mm, 32-lead QFN package, MAAP-011139 has 29–31 GHz frequency range and delivers 24 dB of linear gain, 4 W of saturated output power, and 23% efficiency. This high-linearity power amplifier, suited for Ka-band, high-data density satellite communications, provides >27 dBm Pout/tone while maintaining IM3 levels of 30 dBc. Rating for input and output return loss is 10 dB. Read More

Communication Systems & Equipment, Electronic Components & Devices

ULP Precision CMOS Op Amps deliver zero drift operation.

December 30, 2014

Targeting front-end amplifier circuits and power management designs, NCS325 and NCS333 offer respective quiescent currents of 21 and 17 µA at 3.3 V and enhance accuracy of motor control feedback and power supply control loops. Products, operating with 350 kHz gain bandwidth with peak to peak noise down to 1.1 µV from 0.1–10 Hz, provide rail-to-rail input and output performance and are optimized for 1.8–5.5 V operation. Max input offset voltage is 10 µV, and offset temperature drift is 30 nV/°C. Read More

Electronic Components & Devices

RF Power Amplifier features optimized SWaP profile.

December 4, 2014

Housed in 4.50 x 3.50 x 0.61 in. aluminum chassis, NuPower™ 13G05A provides saturated RF power of at least 35 W from 800–2,000 MHz with greater than 40% efficiency across frequency band. With nominal input drive level of 0 dBm, L-band unit offers 45 dB of RF gain. Device is small enough for integration into air- or ground-based tactical, test, or training platforms. It can be used with communications and telemetry systems to provide range extension or with electronic warfare systems. Read More

Electronic Components & Devices

7-GHz ADC Drivers bring AC performance to DC-coupled applications.

November 28, 2014

Supplied in 14-pin, 2.5 x 2.5 mm QFN package, LMH3401 and LMH5401 are fully differential amplifiers (FDAs). While LMH3401 provides 16 dB of gain and delivers 7 GHz of -3 dB bandwidth at 16 dB gain, slew rate of 18,000 V/µs, and harmonic distortion of -77 dBc at 500 MHz, LMH5401 can be configured for 6 dB of gain or more. It delivers 6.2 GHz of -3 dB bandwidth at 12 dB gain and provides slew rate of 17,500 V/µs, harmonic distortion of -90 dBc at 200 MHz, and IMD3 of -90 dBc at 200 MHz. Read More

Test & Measuring Instruments, Electronic Components & Devices

Ka-Band HPA and Block Upconverter serves SatComm applications.

October 29, 2014

Intended for use in single-carrier satellite communications, 5.72 x 4.51 x 1.63 in. HMC7053 block upconverter and 5.0 x 4.51 x 1.145 in. HMC7054 high-power amplifier (HPA) operate in 29–31 GHz frequency output range and feature -60 dBc SFDR performance. Ka-band block upconverter features 1–2 GHz dual input IF at 0 dBm typ and 20 dB conversion gain. Ka-band HPA achieves linear output power of 37 dBm, offers 42 dB small signal gain, and operates at 5 V while drawing 14 A. Read More

Electronic Components & Devices

Stereo Class-D Power Amplifier delivers 20 W per channel.

October 28, 2014

Housed in 28-pin TSSOP package, Model IS31AP2110 optimizes audio quality for multimedia applications, such as sound bars, LCD projectors, and HDTVs. Adjustable power limit function and dynamic temperature control enable quality audio playback without external heat sink. Eliminating need for input resistors, 4 digitally selectable gain settings from 20–36 db ensure optimized input matching to minimize noise. Advanced output stage permits use of ferrite bead filters for EMC compliance. Read More

Electronic Components & Devices

E-Band Driver Amplifier targets point-to-point radios.

October 15, 2014

Delivering typical Psat of 24 dBm for 71-76 GHz and 81-86 GHz frequency ranges in single product, 4-stage Model MAAM-011167 is suited for high capacity macro cell and small cell backhaul point-to-point radios. Bare die power amplifier supports 18 dB of small signal gain with variable gain control for flexible performance tuning. Integrated power detector enables customers to avoid extra loss that is associated with discrete power detectors. Read More

Electronic Components & Devices

S-Band Power Pallet/Hybrid Amplifiers help meet SWaP requirements.

October 8, 2014

GaN on SiC S-Band power products include 7 x 7 mm MAMG-002735-030L0L (30 Wpk) and 14 x 24 mm MAMG-002735-085L0L (85 Wpk) hybrid GaN amplifiers as well as 51 x 23 mm MAPG-002729-350L00 (350 Wpk) aluminum-based pallet. Optimized for commercial air traffic control, weather radar, and military radar applications, these SMT products support bandwidths capable of enabling multifunction system capabilities and dynamic frequency operation for complex waveforms while maximizing power/cooling efficiency. Read More

Mechanical Power Transmission, Electronic Components & Devices

Low-Power Rail-To-Rail Amplifiers drive 12-, 14-, and 16-bit ADCs.

October 1, 2014

Intended for high-speed DAQ applications, ADA4805-1 (single) and ADA4805-2 (dual) amplifiers come in SC70, SOT23, MSOP, and LFCSP package options. Dynamic Power Scaling feature lets user dynamically manage power consumption by shutting down amplifier between analog-to-digital converter samples. Along with slew rate of 160 V/µsec, 100 MHz ADA4805-1 and ADA4805-2 offer low noise (5.9 nV/√Hz at 100 kHz) and low distortion (-102 dBc/-116 dBc HD2/HD3 at 100 kHz) while consuming 1.5 mW.
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Electronic Components & Devices

GaN-Based Amplifiers support DOCSIS 3.1 cable networking.

September 29, 2014

DOCSIS 3.1 products include 1.2 GHz power amplifiers as both hybrids and multi-chip modules (MCMs) that use GaN HEMT process technology. Of 11 amplifiers, 6 are gallium nitride (GaN)-based products that support DOCSIS 3.1 requirements. Specific offerings include power doubler amplifiers, push pull amplifiers, optical receivers, reverse path amplifier, and digital step attenuators. GaN technology offers power density required to meet high-power CATV requirements and increase data rates. Read More

Communication Systems & Equipment, Mechanical Power Transmission, Electronic Components & Devices

GaN Power Amplifier is optimized for power and linearity.

September 8, 2014

As 28–32 GHz GaN power amplifier (PA) in die form, CMD217 features >20 dB gain across operating frequency range with corresponding output 1 dB compression point of +36.7 dBm and saturated output power of +39.3 dBm (8.5 W). Power added efficiency is 28%–35% across band. This fully matched 50 Ω design requires only external bypass capacitors to complete bias circuitry. Suited for Ka-band communication systems applications, die is passivated for reliability and moisture protection. Read More

Electronic Components & Devices

GaN PA in Die Form combines power, linearity, and efficiency.

August 26, 2014

Suited for Ku-band communications systems, CMD216 delivers 16 dB of flat gain across entire 14–18 GHz bandwidth, output 1 dB compression point of +37 dBm, and saturated output power of +38 dBm. This power amplifier with fully matched 50 ohm matched design requires bias of Vdd = 28 V, 550 mA, and Vgg = -3.4 V. Power added efficiency is 32% or greater, and external bypass capacitors are only required to complete bias circuitry. Die is passivated for reliability and moisture protection. Read More

Communication Systems & Equipment, Electronic Components & Devices

Klystron Modulator provides pulse fidelity and repeatability.

August 26, 2014

Featuring >0.1% pulse fidelity and repeatability, with 100,000 hr MTBF, DTI PowerMod™ Solid-State Klystron Transmitter is suited for particle accelerators and mission-critical radars. Unit includes PLC-based controller, pulse transformer, high voltage solid-state switch, and required protection circuitry to run Klystron. With peak RF power to 100 mW, amplifier offers pulse widths from 1 µs to 5 mS, repetition rate to 1 KHz, voltage flatness of <1%, and 0.1% reproducibility. Read More

Electronic Components & Devices

RF Power Amplifier suits base station applications.

August 1, 2014

Delivering up to 1,000 W PEP power into 50 Ω load over frequency range of 225–400 MHz, Model KAW5050 comprises power amplifier, controller sub-system, and AC power supply encased in 3 RU shelf. Class AB wideband system weighs 50 lb and mounts into standard 19 in. equipment rack. It can be operated and monitored remotely via RS232 or Ethernet control. Read More

Communication Systems & Equipment, Electronic Components & Devices

X-Band 15 W High Power Amplifier suits radar applications.

July 30, 2014

Suited for X-band pulsed applications, MAAP-015036 features saturated pulsed output power of 42 dBm, signal gain of 17 dB, and typical 43% power added efficiency. This 2-stage, 8.5–10.5 GHz, GaAs MMIC power amplifier can be biased using direct gate voltage or on-chip gate bias circuit. Dual-sided bias architecture promotes flexible assembly and board design. Specific applications include marine, weather, and surface-movement radar as well as perimeter security and communication links. Read More

Electronic Components & Devices

Broadband 20 GHz GaN PA is designed for reliability.

June 12, 2014

Fabricated on GaN, CMD184 offers bandwidth of 0.5–20 GHz, output 1 dB compression point of >+34 dBm, and flat gain of 13 dB. This broadband 20 GHz GaN power amplifier (PA) requires off-chip bias tee for proper operation. Die offers full passivation for maximum reliability and moisture protection. In addition to microwave radio and VSAT, suitable areas of use include telecom infrastructure, test instrumentation, as well as military and space applications. Read More