Spectra-Physics, Inc.    Mountain View, CA 94043
May 16, 2013 Ultrafast laser system, combining automated Spirit™-OPA (optic parametric amplifier) and Spirit 1040-4 or 1040-8 industrial-grade femtosecond laser, tunes virtually gap-free from mid-IR to deep ultraviolet (DUV), from 16 µm to 210 nm, and offers user-adjustable repetition rates from tens of kHz up to 1 MHz. Functionality serves such time-resolved spectroscopy applications as single molecule studies, nonlinear optics, and fluorescence lifetime measurements.

NuWaves Engineering    Middletown, OH 45044
May 10, 2013 Designed for use with half-duplex RF transceivers running constant-envelope waveforms, NuPower Xtender™ Bidirectional L- and S-Band PA module (model NW-BSSPA-10W-1.0-2.5) provides 10 W peak min RF output power and 40 dB of gain with 30% average power efficiency from 1,000–2,500 MHz. Adjacent radio frequency bands, such as 900 MHz ISM band, are supported at lower peak power levels. Nickel-plated aluminum chassis occupies 3.00 x 2.00 x 1.15 in. and weighs <6 oz.

Comtech Xicom Technology, Inc.    Santa Clara, CA 95054
Mar 19, 2013 Housed in 32 lb package measuring 6.8 x 10.5 x 17 in., Model XTSLIN-100X-B1 includes integrated BUC, output isolator, and harmonic filter. High-power unit features 100 W of WGS linear power and draws only 750 W of prime power at linear RF output. Amplifier supports critical multi-carrier X-band operation with extremely low leakage levels in receive band, even for case with SSPA in view of antenna and feed.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Mar 08, 2013 Supplied in fully molded, 5 x 5 mm, plastic QFN package, MAAP-010516 and MAAP-010517 are comprised of 3-stage power amplifier with integrated, temperature-compensated, on-chip power detector. Both are suited for point-to-point (PtP) radios for cellular backhaul applications and feature on-chip ESD protection structures with DC bypass capacitors. Respectively, MAAP-010516/-010517 are optimized for performance over 12.75–13.25 GHz and 14.5–15.35 GHz ranges.

Anadigics, Inc.    Warren, NJ 07059
Mar 08, 2013 Supplied in 3 x 4 x 0.9 mm package with internal voltage regulation and integrated DC blocks on RF ports, AWT6765 is optimized for LTE bands 25 and 26 (814–849 MHz and 1,850–1,915 MHz) and offers efficiency ratings of 39% @ +27.2 dBm and 36% @ +16 dBm. Dual independent amplification chains optimize performance for each band, and linearity maintains stable, high-throughput 3G/4G connections. This ProEficient-Plus™ PA leverages InGaP-Plus™ technology and has 6 mA quiescent current.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Feb 25, 2013 Operating from 500 MHz to 3.0 GHz frequency range, MAAP-010168 is fully matched for input and output at 50 Ω, which eliminates need for sensitive external RF tuning components. This 10 W, 2-stage amplifier, fabricated using high-reliability pHEMT process, provides nominal gain of 24 dB with input and output return loss of 10 dB across frequency band. Features suit RF and microwave applications, such as repeater amplifiers, air traffic control and weather radar, and radio communication.

Anadigics, Inc.    Warren, NJ 07059
Feb 25, 2013 Leveraging InGaP-Plus™ technology, AWB7224 small-cell power amplifier (PA) provides characteristics optimized for WCDMA, HSPA, and LTE small-cell base stations operating in 728–768 MHz band. Efficiency rating of 13% minimizes power requirements and promotes flexible network power systems selection. Supplied in 7 x 7 x 1.3 mm SMT package with integrated RF matching, PA offers linearity of -47 dBc ACPR at +27 dBm output power and 29 dB of RF gain.

AR RF/Microwave Instrumentation    Souderton, PA 18964
Dec 13, 2012 Covering 10 kHz to 400 MHz frequency range, Models 200A400 and 400A400 deliver power required for applications using MIL-STD, DO 160, and other automotive standards. Each amplifier utilizes linear devices in all high power stages to minimize distortion and optimize stability. Providing local and remote control of amplifier, Digital Control Panel displays operational presentation of Forward Power and Reflected Power plus control status and reports of internal amplifier status.

Anadigics, Inc.    Warren, NJ 07059
Dec 05, 2012 Leveraging InGaP-Plus™ technology, Model AWB7129 is optimized for WCDMA, HSPA, and LTE small-cell base stations operating in 925–960 MHz frequency band. Amplifier delivers 15% efficiency with linearity of -47 dBc ACPR at ±10 MHz offset, +24.5 dBm linear output power, and 30 dB gain. Housed in 7 x 7 x 1.3 mm surface mount package with integrated RF matching, amplifier is suitable for picocells, femtocells, and high-performance customer premise equipment.

Anadigics, Inc.    Warren, NJ 07059
Nov 26, 2012 Featuring passive components in pin compatible SOT-115J package, 24 V Models ACA2786, ACA2788, ACA3748, and ACA3754 use MESFET technology to provide high output power for 1 GHz and 870 MHz applications. Line amplifier power doublers feature low composite triple beat, composite second order, and cross modulation distortion characteristics for optimal performance in fully loaded spectrum. Controlled gain limits minimize lot-to-lot variation and ensure uniformity.

Anadigics, Inc.    Warren, NJ 07059
Sep 07, 2012 Able to extend battery life in mobile devices such as smartphones and tablets, ProEficient(TM) dual-band power amplifiers (PAs) leverage InGaP-Plus(TM) technology and design architectures to increase talk time in low-power mode and data application use in high-power mode. Along with 2 independent amplification chains, features include 3 x 4 x 0.9 mm package, 46% (high power) and 40% (low power) efficiency ratings, as well as CDMA, WCDMA, HSPA, and HSPA+ compliance.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Aug 14, 2012 Operating over 2.5-3.5 GHz range, MAAP-010171 two-stage, 8.0 W, pulsed power amplifier is fully matched to 50 ohms on input and output. Device is 100% RF tested to ensure performance compliance and fabricated using pHEMT Process. Packaged in 5 x 5 mm, 20-Lead PQFN package to facilitate assembly, product offers 27 dB gain and 38% power added efficiency. Device can be used as power amplifier stage or driver stage in high power pulsed radar applications.

Anadigics, Inc.    Warren, NJ 07059
Jun 29, 2012 ProEficient(TM) WCDMA/LTE power amplifiers maximize talk time in low-power mode while allowing long-term data application use in high-power mode. Suitable for smartphones and tablet devices, units maximize 4G battery-life without use of DC-DC converter. Depending on model, amplifiers operate over frequency ranges of 880-915 MHz to 1,920-1,980 MHz, and in bands 1, 2, 3/4/9/10, 5, and 8. Products, contained in 3 x 3 mm package, include internal voltage regulation and DC blocks on RF ports.

Toshiba America, Inc.    Wayne, NJ 07470
Jun 22, 2012 Respectively operating in 5.3-5.9 GHz and 5.9-6.4 GHz range, TIM5359-16EL and TIM5964-16EL C-Band gallium arsenide field effect transistors (GaAs FETs) offer output power, at 1 dB gain compression point, of 16 W or 42.5 dBm typ; linear gain of 11.5 dB typ; and power added efficiency of 38%. Products targeting microwave radios support point-to-point and point-to-multipoint terrestrial communications, while those supporting block up convertors (BUCs) support satellite communications.

CTT Inc.    Sunnyvale, CA 94089
May 31, 2012 Requiring single supply voltage, GaN-based AGN and AGW Series serve RF and microwave applications such as commercial, industrial, and military radar. There are 15 models for narrowband applications, operating from 7.8-10.7 GHz in continuous wave (CW) mode; 12 models for narrowband (less than 10% bandwidth) applications, operating from 8.5-10.7 GHz in pulsed mode; and 12 models for wideband and ultra-wideband applications, operating from 6.4-11.0 GHz in CW mode.

Ubidyne GmbH    D-89081 Ulm   Germany
May 25, 2012 Intended for small-cell and macro-cell active antennas, Micro Radio Transceiver provides output power from 0.8-6.4 W by parallel use of P-Chips. Each P-Chip Doherty MMIC power amplifier delivers more than 39 dBm peak output power. Based on micro radio, uB700 Active Antenna System supports 4G in 700 MHz digital dividend band for broadband mobile networks, while uB900 supports GSM, UMTS, and LTE in 900 MHz band. Each micro radio can be controlled digitally and independently by central hub.

Newport Corp.    Irvine, CA 92606
May 09, 2012 Designed for stability, Spitfire® Ace(TM) Power Amplifier delivers 12+ W output at 5/10 kHz and 10+ W at 1 kHz repetition rate. Beam quality, with XP cavity, provides M2 less than 1.45 even at highest energy configuration. Also available, Inspire IR OPO, fully automated IR ultrafast optical parametric oscillator (OPO), tunes gap-free from 1,000-1,600 nm with high power and short pulse widths across full range. Design ensures stability and insensitivity to ambient temperature change.

Calnetix    Cerritos, CA 90703
Mar 09, 2012 Featuring power amplifiers rated at 3,600 VA/channel, Insight(TM) 3600 provides control of advanced permanent magnet, bias magnet bearings in up to 5 axes. Sensor interface drives and demodulates up to 5 sensor coils, providing position of rotor in real-time, while DSP regulates power amplifier current to drive bearing actuators based on position sensor data. Graphical user interface enables programming, remote monitoring, and diagnostics of system.

Comtech Xicom Technology, Inc    Santa Clara, CA 95054
Mar 09, 2012 Weighing 56 lb, model XTD-750KHE antenna mountable traveling wave tube amplifier (TWTA) is designed for Ku-band SATCOM uplinks and draws 1,450 W at 270 W of linear RF output power. Complete serial M&C system is built into unit, and remote external controller is available to operate high power amplifier (HPA) from user-selected location. Suited for transportable applications, product delivers 750 W peak power performance.

Anadigics, Inc.    Warren, NJ 07059
Feb 28, 2012 Housed in 4.5 x 6 mm package, AWT664x Series Front-End Modules combine HELP3E(TM) power amplifiers with duplexers to optimize RF performance while extending battery life in thin form factor phones. Dual-band modules offer 3 mode states to achieve high power-added efficiencies at low-range and mid-range output power levels for use with or without DC-DC converter. Compliant with WCDMA/HSPA, HSPA+, and LTE, devices have low quiescent current of 4 mA and flat gain response across all bands.