Power Amplifiers

Electronic Components & Devices, Communication Systems & Equipment

GaN MMIC Power Amplifier suits pulsed radar applications.

November 25, 2015

Rated for 25 W and 8.5–11.0 GHz operation, Model CMPA801B025 features 37 W typical POUT, 16 dB power gain, 35% typical power added efficiency, and less than 0.1 dB power droop. X-Band GaN MMIC Power Amplifier is internally matched to 50 Ω, and is supplied in both 10-lead metal/ceramic flanged package, and smaller form factor pill package for optimal electrical and thermal performance. Read More

Communication Systems & Equipment, Electronic Components & Devices

Solid-State Microwave Pulse PA has 1.0-2.0 GHz frequency range.

November 16, 2015

Able to supply 4 kW pulse power up to 10% duty cycle with max pulse width of 100 µsec, S21-4KWP-2KWP FLEX can also be configured into 2 separate 2 kW pulse amplifiers. IEEE-488 and RS232 interfaces come standard, and UI features backlit screen that shows forward/reverse power indication, system status, and self-diagnostic information. Power indication is shown in pulse, and all operating features are available on front panel display as well as over remote bus.
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Communication Systems & Equipment, Electronic Components & Devices, Mechanical Power Transmission

S-Band RF PA Module (30 W) targets communications, telemetry, EW.

November 5, 2015

Providing 30 W ave and 20 W min RF output power, solid-state NuPower 05E05A operates from 2,000–2,600 MHz for continuous wave (CW) and near-constant-envelope waveforms. This connectorized power amplifier (PA) module, supplied in 4.50 x 3.50 x 0.61 in. aluminum chassis and suited for S-band transmitters and data links, has nominal 0 dBm (1 mW) input signal and provides 44 dB RF gain while operating at 40% DC power efficiency with +28 Vdc supply voltage. Read More

Electronic Components & Devices, Mechanical Power Transmission

Class-D Audio Amplifiers feature I2S serial bus interface.

November 5, 2015

Providing 3D surround sound, audio mixing, 20 band equalizer, and dynamic range control, 20 Watt Models IS31AP2111 and IS31AP2121 target medium-power multimedia applications such as Bluetooth speakers, sound bars, LCD projectors, and HDTVs. Both devices operate in Bridge-Tied Load mode, which doubles available power to speaker load. I2S interface transfers audio signals in digital format to maintain maximum audio quality when distributed between audio devices. Read More

Electronic Components & Devices

RF Amplifier System covers 1-2.5 GHz and delivers 2 kW HPA.

October 15, 2015

With 8U, air-cooled chassis, Model 2180 features single RF input and output and delivers 2 kW CW of broadband output power. AGC, ALC, and MGC modes support user-selectable configuration and operation, while optional filter/switches improve harmonic rejection. Portable unit uses high voltage RF transistors (GaN) and offers fast electronic VSWR protection. Multi-faceted Monitoring and Control (M&C) UIs include Web browser, TCP/IP Ethernet, RS-485, and front panel touchscreen. Read More

Communication Systems & Equipment, Electronic Components & Devices, Mechanical Power Transmission, Electrical Equipment & Systems

GPS Rackmount Splitter includes dual antenna redundancy.

October 12, 2015

Developed for wireless industry, GPS/GNSS rackmount splitter provides GPS timing signal to up to 32 GPS/GNSS synchronization modules and receivers. Design ensures GPS timing signal is available even in case of antenna or cable failure. In addition to amplifying and splitting GPS/GNSS signal, product offers such features as dual GPS antenna input ports, health monitor, and sensor switch. Antenna redundancy is acquired through use of primary and backup antennas. Read More

Electronic Components & Devices

LNAs and Gain Blocks cover frequency bands from 9 KHz to 3 GHz.

October 12, 2015

Coaxial-packaged RF amplifiers are unconditionally stable low noise and gain block amplifiers offering P1dB levels up to +23. In specific versions, GaAs PHEMT semiconductors are used for linear performance and efficiency. Noise figure levels range as low as 0.5 dB, and IP3 linearity reaches up to +37 dBm. While single DC positive voltage supply ranges from +12 to +15 Vdc, bias current ranges from 40–190 mA. Operating range is -40 to +85°C. Read More

Electronic Components & Devices

RF PA Module (10 W) works with L- and S-band equipment.

October 5, 2015

Supplied in 3.00 x 2.00 x 0.65 in. aluminum chassis with +85°C max baseplate temperature rating, NuPower™ 12B01A (Part No. NW-PA-12B01A) provides RF amplification for transmitters, transceivers, and data links that do not require linear performance. This broadband RF power amplifier (PA) for L- and S-band equipment delivers 10 W min and 13 W typ of RF power from 1,000–2,500 MHz when sourced with 0 dBm (1 mW) RF input signal. Power efficiency ranges from 30%–50%, and RF gain is 40 dB. Read More

Electronic Components & Devices

Solid-State Power Amplifier delivers 1 kW output.

September 15, 2015

Operating over 1,200 MHz bandwidth centered at 9.5 GHz, X-band Model DM-X1K0-01 measures just 244 x 134 x 50 mm excluding heatsink and connectors, making it suitable for use as alternative to traveling wave tube amplifier. GaN-based pulsed SSPA employs chip-and-wire design and supports demanding defense, aerospace, and communications applications. Read More

Electronic Components & Devices, Mechanical Power Transmission

GaN Power Amplifiers boast high power and high gain.

September 11, 2015

Featuring high gain levels from 43–60 dB across frequency bands of 30 MHz to 7.5 GHz, GaN Coaxial Power Amplifiers provide saturated output power levels from 10–100 W with 20–35% Power Added Efficiency. Thermal efficiency of GaN technology enables assemblies to be integrated into compact coaxial packages. All are equipped with single voltage supplies which are internally regulated. Devices' 50 Ω input/output matched designs are adaptable to range of power and modulation requirements. Read More

Electronic Components & Devices

RF Power Amplifiers offer 0.5 MHz to 20 GHz frequency range.

July 30, 2015

Designed to operate over extreme temperatures of -55 to +85°C, High-Rel Power Amplifiers are suited for electronic warfare, military communications, radar, point-to-point radio, telecom, test and measurement, medical, and SATCOM industries. Units generate saturated output power levels up to 100 W and all models require only single positive voltage supply ranging from +12 to +42 Vdc. Small signal gain levels range from 11–58 dB with IP3 linearity up to +66 dBm. Read More

Electronic Components & Devices

High Power Amplifiers cover 150 kHz to 7,500 MHz frequencies.

June 10, 2015

Covering UHF, VHF, L, S, and C frequency bands, High Power Amplifiers come in 22 models with output power levels greater than 10 W. Solid state 50 Ω hybrid MIC designs use GaN, GaAs, or LDMOS transistor technology that allows gain levels from 40–60 dB. Typical gain variation is ±1.5 dB. Enclosed in environmentally sealed coaxial metal packages, RF amplifiers include models with output P1dB levels from +10 to +50 W and models with output saturated power levels ranging from +40 to +50 dBm. Read More

Electronic Components & Devices

Power Amplifiers support communications, jamming applications.

May 20, 2015

Supplied in 19 in. enclosure, QBS-620 rackmount GaN power amplifier module consists of 2 identical channels, each containing 200 W Amp, VHF and UHF switched harmonic filter banks, SP3T switches, controller, and AC/DC power supply. Along with LDMOS technology, QBS-617 utilizes balanced architecture with isolator on output and comes with temperature compensation, forward/reverse power detection, VSWR monitor, and thermal shutdown. Output power is 100 W min at 1 dB compression with gain of 52 dB. Read More

Electronic Components & Devices

Solid State Power Amplifier operates in pulsed or CW mode.

May 20, 2015

Operating over 1,700 MHz bandwidth centered at 8.5 GHz, GaN-based Model DM-X100-01 delivers 100 W peak pulsed power output. Core microwave assembly consists of chip-and-wire design in slim, low-profile housing. Flexible in layout and architecture, X-band amplifier is fully customizable to meet individual specifications for electrical, mechanical, and environmental parameters. Device is suited for demanding defense, aerospace, and communications applications. Read More

Electronic Components & Devices

Power Ku-Band MMIC HPA covers commercial satcom band.

May 5, 2015

Available in 25 x 9.6 mm, 10-lead, metal/ceramic flanged package (CMPA1D1E025F) or as bare die (CMPA1D1E030D), 50 Ω Ku-Band MMIC (monolithic microwave integrated circuit) high power amplifier (HPA) covers 13.5–14.75 GHz band and operates at 40 V VDD. This 30 W GaN MMIC 2-stage HPA delivers satcom measured performance of 20 dB linear gain at 42 dBm average output power while maintaining linearity under -33dBc OQPSK signal and with adjacent channel power at drain efficiency of 20%. Read More

Electronic Components & Devices, Mechanical Power Transmission

Broadband MMIC GaN LNA meets high-RF power survivability needs.

April 29, 2015

Fabricated in GaN technology and supplied in leadless, 4 x 4 mm, ceramic package, CMD219C4 broadband MMIC low-noise amplifier (LNA) operates from 4–8 GHz with gain of 22.5 dB, noise figure of 1.0 dB, and output 1 dB compression point of +17 dBm. Product withstands RF input power levels of up to 5 W without permanent damage. Areas of use include microwave radios and C-band applications, such as point-to-point and point-to-multi-point radios, military and space, and test instrumentation. Read More

Test & Measuring Instruments, Electronic Components & Devices

Test System meets immunity testing requirements.

April 9, 2015

Combining signal generator and integrated power amplifier, Model NSG 4060 meets requirements for immunity testing to low frequency disturbances in frequency range of 15 Hz to 150 kHz. Disturbances are coupled onto cables in common mode (IEC/EN 61000-4-16) with continuous levels up to 33 V or differential mode (IEC/EN 61000-4-19) with levels up to 22 V/4.5 A. System includes user port for 4 TTL inputs and 4 TTL outputs as well as supply voltages for individual monitoring and control applications. Read More

Electronic Components & Devices

High Power Amplifier integrates power detector.

April 9, 2015

Designed specifically for 18 GHz wireless backhaul applications, Model MAAP-011145 covers 17.6–19.75 GHz frequency band and delivers over 2 W output power at 1 dB compression point. Device provides 25 dB small signal gain, OIP3 of 43 dBm, noise figure of 7 dB, and 34.5 dBm of saturated output power. Housed in 7 mm, lead-free cavity package, amplifier features temperature compensated integrated power detector as well as ESD protection and by-pass capacitors. Read More

Electronic Components & Devices, Optics & Photonics

Transimpedance Amplifier suits coherent receiver applications.

April 8, 2015

With power dissipation of 300 mW per channel, Model MATA-003806 is suited for next generation of micro Integrated Coherent Receivers for metro applications at 100 Gbps and beyond. Dual-channel linear TIA has transimpedance gain which can be adjusted from 100 Ω up to 10 KΩ with manual and automatic gain control modes of operation. Input and output peak detectors are available for RSSI and AGC functionality. Read More

Electronic Components & Devices, Electrical Equipment & Systems

Isolated Gate Driver suits high power density applications.

April 3, 2015

Aimed at high-density power converters, motor drives, and actuators based on SiC transistors, power MOSFETs, and IGBTs, HADES® v2 chipset uses 3 ICs: HADES2P on primary side, HADES2S on secondary, and quad-diode ELARA. Unit includes all functions to drive gates of power switches in isolated, high voltage half bridge. HADES® is available in hermetic packages for extreme temperature applications up to 225°C, as well as in plastic packages for systems where temperature does not exceed 175°C. Read More