RF Micro Devices, Inc.
Greensboro, NC 27409-9421
Nov 04, 2009 Models D10040200PL1 and D10040230PL1 are GaN based hybrid power doubler amplifiers designed to provide final amplifier stage for CATV trunk amplifiers, line extenders, and optical nodes. Units operate from 45-1,000 MHz and feature current consumption of 24 V, 380 mA. They offer high output and optimal linearity/return loss performance with low noise. Modules utilize GaAs pHEMT and GaN HEMT die.

Bruel & Kjaer
Norcross, GA 30071
Oct 30, 2009 Class D amplifier, Model 2734-B weighs less than 7 kg and has high power output to deliver up to 500 W to associated sound source. Built-in pink and white noise generator can be controlled manually or by wireless remote control option for Type 2250, 2270 and 2260 hand-held analysers. Calibrated controls and level indicator lamps aid in restoring settings, while indicator lamps also serve to protect sound source from excessive signal levels.

Comba Telecom Systems Holdings Ltd
Shatin   Hong Kong (prc)
Oct 20, 2009 Deployed as part of base station setup, WCDMA/GSM mixed mode Multi-Carrier Power Amplifier (MCPA) Tower Bottom Solution (TBS) delivers features such as mixed-code and multi-carrier compatibility that increase number of carriers per cell site without additional requirements for cables and antennas. It eliminates requirement for multiple Single-Carrier Power Amplifiers, reducing overall Base Transceiver Station power consumption and failure rates of active modules.

Instruments For Industry, Inc.
Ronkonkoma, NY 11779
Oct 13, 2009 Available at power levels from 10-500 W, IFI CMC300 Series provides minimum of 300 W of CW power for 10 MHz to 1.0 GHz frequency range. Single-drawer units feature compact design measuring 10.5 in. H (depending on power level and options) x 19 in. W x 25.25 in. D. Amplifiers are suited for high power test requirements for pre-compliance testing, EMC testing, and all lab and test installations.

Audium Semiconductor Ltd
Bristol   United Kingdom
Oct 09, 2009 Housed in single 64QFN package and operating directly from 0.8-1.8 V supply, Model AS1001 enables battery-powered amplified speakers to run 3 hours per day for 10 months. IC uses patented techniques to minimize both fixed power losses and output-dependent variable power losses. With power rail switching, amplifier operates efficiently from low voltage rail, with DC-DC boost converter driving higher voltage transistors on extreme audio peaks.

Instruments For Industry, Inc.
Ronkonkoma, NY 11779
Sep 21, 2009 Solid-state SMXE-200-2G Series power amplifier provides minimum of 200 W of CW power for frequency range of 10 KHz to 2.0 GHz. Measuring 19 x 10.5 x 27 in. and weighing 60 lb, compact, solid-state power amplifier simplifies EMC and other RF/Microwave testing for low-to-high power test applications. It can also be used for pre-compliance testing, as well as all lab and test requirements.

Freescale Semiconductor
AUSTIN, TX 78735-8598
Sep 02, 2009 Providing 50 W peak RF output power, MRF7P20040H LDMOS FET features drain efficiency of 43% and 18 dB gain at 10 W average output. Multi-stage power amplifier IC, Model MD7IC2050N, provides 70 W peak RF output power, drain efficiency of 35%, and 29 dB gain at 10 W output. Designer can select discrete, 3-stage PA configuration with MRF7P20040H as final amplifier, or MD7IC2050N IC in 2-stage PA configuration. Supporting dual-path configurations, both units are suited for use in Doherty amplifiers.

Amalfi Semiconductor
Los Gatos, CA 95032-5405
Sep 01, 2009 Dual-band AM7802 GSM/GPRS transmit module integrates power amplifier, controller, transmit/receive switch, and filtering into 30 mm² package. Unit is capable of 1.5 kV ESD on all pins, including RF pins, and can withstand 8 kV ESD on antenna port. Capable of operation down to 2.7 V, it maximizes handset operating time and will be able to be used with next-generation, low-voltage batteries.

Rohde & Schwarz GmbH & Co
  Germany
Aug 19, 2009 BBA100 has modular design that allows users to select frequency range and output power to suit their requirements, and built-in expansion capability allows amplifier modules to be replaced easily. Device features 3 frequency bands, each with configurable interlock circuit, that cover range from 9 kHz to 1 GHz and provide power up to 500 W. Integrated system controller controls frequency bands, switches system components, and monitors device.

Maxim Integrated Products
Sunnyvale, CA 94086
Aug 14, 2009 Model MAX3518 CATV amplifier dissipates 1.25 W when configured for 31 dB of gain and +64 dBm VOUT. It also consumes 25 mW in transmit-disabled mode while acheiving 10 dB noise and 60 dBc of harmonic distortion. Operating from 5.0 V supply that connects to single pin on device, it is specified over -40 to +85°C temperature range. Unit is available in 5 x 5 mm, 20-pin TQFN package.

SST Communications, Inc.
Kansas City, MO 64131
Aug 14, 2009 Supplied in 3 x 3 mm QFN package, 2.4 GHz SST12CP11 is manufactured using InGaP/GaAs HBT technology and supports operating voltage up to 5 V. Three-stage device achieves 34 dB power gain as well as 26 and 25 dBm linear output power at 3.5% and 2.5% EVM, respectively, at 5.0 V bias with less than 470 mA current consumption. This helps increase transmission range and data rate of WiFi (802.11b/g/n) access points and routers in consumer and enterprise environments.

Silicon Storage Technology Inc.
Sunnyvale, CA 94086
Aug 10, 2009 Housed in 3 x 3 mm QFN package, 3-stage 2.4 GHz Model SST12CP11 achieves 34 dB power gain, 26 dBm and 25 dBm linear output power at 3.5% and 2.5% EVM, respectively, at 5.0 V bias with less than 470 mA current consumption. Device is 802.11b/g spectrum mask compliant up to 29 dBm for added performance. Manufactured using InGaP/GaAs HBT technology, amplifier helps optimize transmission range and data rate of 802.11b/g/n wireless access points and routers.

California Eastern Laboratories
Santa Clara, CA 95054
Jul 22, 2009 Housed in 3 x 3 x 0.7 mm package, Model UPG2253T6S combines power amplifier, low pass filter, and 2 SPDT switches into single chip. Device is suited for Bluetooth modules designed into notebooks, mobile phones, and headsets as well as ZigBee/802.15.4 modules used in automatic meter reading, wireless security, and lighting systems. Through/PA bypass feature enables end product to switch to high power mode when greater range is needed and low power mode when greater battery savings are optimal.

Oclaro
San Jose, CA 95134
Jun 15, 2009 New Focus(TM) TA-7600 series amplifier features tapered structure that maintains minimized power densities even after amplification. Capable of delivering over 1 W output power, unit offers fiber-coupled input which allows for simplified alignment. Constant power mode, monitor for input power, and front- and back-end isolation features are also included. Unit is compatible with New Focus Vortex(TM) II Precision Laser and with 767, 780, 795, and 852 wavelengths.

RF Micro Devices, Inc.
Greensboro, NC 27409-9421
Jun 11, 2009 Manufactured using InGaP HBT process technology, 2 GHz Model RF5602 features 32-34 dB small signal gain, integrated input power detector, and 3.3-5 V operation. Error vector magnitude performance is 2% at 26 dBm output power, 2% at 25 dBm, and 3% at 23.5 dBm. Optimized for use as final RF amplifier in 802.16 e/d and 802.11 b/g/n applications, device is also suited for 2.4 GHz ISM band applications, PCS communications systems, and WiBro 2.3-2.4 GHz applications.

Trek, Inc.
Medina, NY 14103 9710
Jun 03, 2009 Suited for piezoelectrics, electro-optics, and MEMS applications, Model PZD350A provides large signal bandwidth of 250 kHz and small signal bandwidth greater than 350 kHz. It offers high speed and precise control of DC or peak AC output voltages in programmable ranges of 0 to ±350 V with output current range of 0 to ±200 mA (bipolar model) and 0 to ±700 V with ±100 mA (unipolar model). CE marked unit provides full four-quadrant, class AB, all-solid-state output stages.

Texas Instruments, Inc. (TI)
Dallas, TX 75243-4136
Mar 25, 2009 Models TAS5709 and TAS5710 digital-input amplifiers combine 32-bit audio processing with 20 W stereo output power. Units include speaker equalization, with up to 9 biquad filters/channel, and store up to 3 sets of biquad coefficients to optimize performance. Dual-band dynamic range control with selectable threshold, attack, and decay protects speakers from damage and stops bass rattling of cabinet/enclosure. Also, 2-channel I2S input allows direct connection to digital processor.

RF Micro Devices, Inc.
Greensboro, NC 27409-9421
Feb 26, 2009 Featuring converged, multimode architecture, Model RF6460 simultaneously supports implementation of up to 5 WCDMA/HSPA+/LTE bands and all 4 bands of GSM/GPRS/EDGE in 3G/4G multimode mobile devices. Unit is comprised of RF6260 multi-band, multimode power amplifier module; RF6360 antenna switch module; and RF6560 front end power management IC. Platform utilizes 2 quadrature amplification paths capable of operating in bands 1-6 and 8-10 while in WCDMA/HSPA+/LTE mode.

RF Micro Devices, Inc.
Greensboro, NC 27409-9421
Feb 26, 2009 Designed for 3G multimode devices implementing mode-specific, band-specific front end architectures, RF720x Series WCDMA/HSPA+ Power Amplifiers include integrated output power coupler, which eliminates need for external couplers. Three digital power modes adjust bias current and optimize PA for desired output power range while maintaining linearity. Amplifiers come in low-profile package measuring 3 x 3 x 1 mm for single-band models and 4 x 5 x 1 mm for dual-band models.

Instruments For Industry, Inc.
Ronkonkoma, NY 11779
Feb 26, 2009 Designed specifically for bellcore testing, Model T101-100-50 single drawer amplifier measures 17.5 x 19 x 27 in. Compact, lightweight amplifier unit provides minimum of 100 W up to 4.0 GHz and 50 W to 10 GHz with better than -20 dBc harmonic levels.