Electronic Amplifiers

Electronic Components & Devices

RF PA Module (10 W) works with L- and S-band equipment.

October 5, 2015

Supplied in 3.00 x 2.00 x 0.65 in. aluminum chassis with +85°C max baseplate temperature rating, NuPower™ 12B01A (Part No. NW-PA-12B01A) provides RF amplification for transmitters, transceivers, and data links that do not require linear performance. This broadband RF power amplifier (PA) for L- and S-band equipment delivers 10 W min and 13 W typ of RF power from 1,000–2,500 MHz when sourced with 0 dBm (1 mW) RF input signal. Power efficiency ranges from 30%–50%, and RF gain is 40 dB. Read More

Electronic Components & Devices

Solid-State Power Amplifier delivers 1 kW output.

September 15, 2015

Operating over 1,200 MHz bandwidth centered at 9.5 GHz, X-band Model DM-X1K0-01 measures just 244 x 134 x 50 mm excluding heatsink and connectors, making it suitable for use as alternative to traveling wave tube amplifier. GaN-based pulsed SSPA employs chip-and-wire design and supports demanding defense, aerospace, and communications applications. Read More

Mechanical Power Transmission, Electronic Components & Devices

High Gain RF Power Amplifiers offer high output, gain, linearity.

September 15, 2015

Operating in K-band and available in SMA connectorized module package, PAC18700T and DRC23000M integrate supply circuitry that allows operation from single power source to foster facilitated installation into systems. PAC18700T (1.43 x 1.53 x 0.6 in.) provides >30 dBm saturated output power and >26 dB gain while covering 17.7–19.7GHz, while DRC23000M (1.2 x 1.05 x 0.6 in.) delivers >16 dBm output power and 20 dB gain while operating from 20–26 GHz. Read More

Electronic Components & Devices, Mechanical Power Transmission

GaN Power Amplifiers boast high power and high gain.

September 11, 2015

Featuring high gain levels from 43–60 dB across frequency bands of 30 MHz to 7.5 GHz, GaN Coaxial Power Amplifiers provide saturated output power levels from 10–100 W with 20–35% Power Added Efficiency. Thermal efficiency of GaN technology enables assemblies to be integrated into compact coaxial packages. All are equipped with single voltage supplies which are internally regulated. Devices' 50 Ω input/output matched designs are adaptable to range of power and modulation requirements. Read More

Electronic Components & Devices

Bi-Directional RF Amplifiers operate up to 3 GHz.

August 20, 2015

Utilizing highly linear Class AB LDMOS semiconductor technology, Coaxial Packaged Bi-Directional Amplifiers include 2 narrow band models that operate in L-Band from 1.35–1.39 GHz and S-Band from 2.4–2.5 GHz. General purpose broadband model covers 30 MHz to 3 GHz and uses Class A GaAs semiconductors. Typical gain levels range from 20–23 dB with ±0.5 dB gain flatness. Providing 1 µs switching, amplifiers are suited for UAV, military radio, air traffic control, and weather observation. Read More

Electronic Components & Devices

Broadband High Power Limiters have ruggedized design.

August 20, 2015

Coaxial RF, microwave, and millimeter wave limiters help protect sensitive RF receivers and components, such as LNAs, in close proximity to high power signals. Operating from 0.5–40 GHz depending on model, 7 designs feature limiting thresholds from 3–10 dBm and leakage power of 10–15 dBm. Coaxial limiters exhibit CW power handling up to 200 W peak and recovery times of 10–100 nsec. Supporting operation from -54 to +85°C, packages are designed to meet MIL-STD-202. Read More

Electronic Components & Devices

Spherical Wi-Fi USB Adapter upgrades laptop/desktop PCs.

August 4, 2015

Featuring 3 x 3 internal antennas, dual-band (2.4 and 5 GHz) technology, and speeds up to 1,900 Mbps, AC1900 Wi-Fi USB Adapter (DWA-192) upgrades laptop/desktop PCs to latest generation wireless AC technology in order to stream HD content and transferring large files. Solution is backward-compatible with 802.11n/g/a technology, works with all brands of Wi-Fi® routers and range extenders, and supports WPA/WPA2 encryption. Features include Advanced AC SmartBeam and USB 3.0 technologies. Read More

Electronic Components & Devices

RF Power Amplifiers offer 0.5 MHz to 20 GHz frequency range.

July 30, 2015

Designed to operate over extreme temperatures of -55 to +85°C, High-Rel Power Amplifiers are suited for electronic warfare, military communications, radar, point-to-point radio, telecom, test and measurement, medical, and SATCOM industries. Units generate saturated output power levels up to 100 W and all models require only single positive voltage supply ranging from +12 to +42 Vdc. Small signal gain levels range from 11–58 dB with IP3 linearity up to +66 dBm. Read More

Electronic Components & Devices

RF Distribution Unit targets HF long wire antennas.

July 23, 2015

Featuring 1U, 19 in. rackmount design, 2–30 MHz Model MtRF-5201 includes 5-pole bandpass filter and 8 individually buffered outputs. Unit provides net gain of 15 dB, noise figure of 3 dB, and IP3 of +38 dBm. Available with BNC, UHF, or N connectors, MtRF-5201 operates from 90–250 Vac line power or 9–18 Vdc at 1.5 W. Read More

Electronic Components & Devices, Test & Measuring Instruments, Sensors, Monitors & Transducers

Test and Measurement Microphone resists dust and water.

July 21, 2015

Featuring stainless steel grid cap and replaceable water- and dust-resistant cover, ½ in. Model 130A24 is suited for applications where moisture, oil splash, and contamination are present. Free-field, prepolarized microphone and preamplifier system has wide dynamic range from 30 dBA (inherent noise level) to 150 dB. Phase characteristics are tailored for noise source location applications such as holography, beamforming, acoustic cameras, and sound pressure mapping. Read More

Electronic Components & Devices

Current-Sense Amplifier integrates low-drift shunt resistor.

July 14, 2015

Integrating 2 mΩ shunt resistor with bi-directional, zero-drift current-sense amplifier, Model INA250 supports both low-side and high-side implementations. Resistor offers 0.1% tolerance as well as low drift of 15 ppm/°C from -40 to +125°C. Amplifier features offset current of 12.5 mA with temperature drift of 250 µA/°C and gain drift of 30 ppm/°C. Supplied in 5 x 6.4 mm TSSOP package, device is suited for test and measurement, communications load monitoring, and power supplies. Read More

Electronic Components & Devices

High Power Amplifiers cover 150 kHz to 7,500 MHz frequencies.

June 10, 2015

Covering UHF, VHF, L, S, and C frequency bands, High Power Amplifiers come in 22 models with output power levels greater than 10 W. Solid state 50 Ω hybrid MIC designs use GaN, GaAs, or LDMOS transistor technology that allows gain levels from 40–60 dB. Typical gain variation is ±1.5 dB. Enclosed in environmentally sealed coaxial metal packages, RF amplifiers include models with output P1dB levels from +10 to +50 W and models with output saturated power levels ranging from +40 to +50 dBm. Read More

Electronic Components & Devices

Broadband Amplifier uses GaN technology for high gain.

June 5, 2015

Featuring compact design, Model ACE3 has 1.2 GHz downstream frequency band and flexible upstream that can be upgraded to 204 MHz. DOCSIS®3.1-compliant amplifier provides high gain control range via continuous intelligent adjustments. Automatic alignment optimizes SNR performance in both signal directions. Additional features include remote power supply with PFC, external access to test points, and local control through external USB connection. Read More

Sensors, Monitors & Transducers, Electronic Components & Devices

Microphone and Preamp System provides infrasound measurements.

June 3, 2015

With frequency range of 0.13 Hz to 20 kHz, ±2 dB, ½ in. Model 378A07 meets IEC 61094-4 standard for test and measurement microphones. This covers infrasound which is below normal hearing range for adults. A2LA and ILAC accredited, free-field polarized microphone performs measurements commonly required for wind turbines, sonic booms, diesel engines, and specialized loudspeaker systems. Read More

Electronic Components & Devices

Dual Band Amplifier runs automotive radar pulse tests.

May 21, 2015

Optimized for maximum power in 1.2–1.4 GHz and 2.7–3.1 GHz radar bands, Model AS0104-800/400 can be used at saturation to produce maximum continuous wave power of >800 W and >400 W, respectively. Amplifier offers harmonics below -20 dBc, even at saturation. Increase in power allows amplifier to run entire 600 V/m at 1 m radar pulse test using single horn antenna. Unit output is suitable for all EMC loads and remote operation is available via IEEE, USB, LAN, or RS232. Read More

Electronic Components & Devices

Power Amplifiers support communications, jamming applications.

May 20, 2015

Supplied in 19 in. enclosure, QBS-620 rackmount GaN power amplifier module consists of 2 identical channels, each containing 200 W Amp, VHF and UHF switched harmonic filter banks, SP3T switches, controller, and AC/DC power supply. Along with LDMOS technology, QBS-617 utilizes balanced architecture with isolator on output and comes with temperature compensation, forward/reverse power detection, VSWR monitor, and thermal shutdown. Output power is 100 W min at 1 dB compression with gain of 52 dB. Read More

Electronic Components & Devices

Solid State Power Amplifier operates in pulsed or CW mode.

May 20, 2015

Operating over 1,700 MHz bandwidth centered at 8.5 GHz, GaN-based Model DM-X100-01 delivers 100 W peak pulsed power output. Core microwave assembly consists of chip-and-wire design in slim, low-profile housing. Flexible in layout and architecture, X-band amplifier is fully customizable to meet individual specifications for electrical, mechanical, and environmental parameters. Device is suited for demanding defense, aerospace, and communications applications. Read More

Electronic Components & Devices

S-Band RF BDA Module works with OFDM transceivers.

May 7, 2015

NuPower Xtender™ 12E06A linear bidirectional amplifier (BDA), operating across 1,980–2,500 MHz range, generates 12 W of RF power for QPSK modulated signals, 6.3 W for 16QAM, and 2.5 W for 64QAM. With 25 dB RF transmit gain and 12 dB receive gain, broadband solution comes in 4.00 x 2.00 x 0.65 in. ruggedized aluminum chassis and is suited for high-performance S-band Orthogonal Frequency Division Multiplexing (OFDM) transceivers with Mobile Ad hoc Networking (MANET) and/or MIMO technology. Read More

Electronic Components & Devices

Power Ku-Band MMIC HPA covers commercial satcom band.

May 5, 2015

Available in 25 x 9.6 mm, 10-lead, metal/ceramic flanged package (CMPA1D1E025F) or as bare die (CMPA1D1E030D), 50 Ω Ku-Band MMIC (monolithic microwave integrated circuit) high power amplifier (HPA) covers 13.5–14.75 GHz band and operates at 40 V VDD. This 30 W GaN MMIC 2-stage HPA delivers satcom measured performance of 20 dB linear gain at 42 dBm average output power while maintaining linearity under -33dBc OQPSK signal and with adjacent channel power at drain efficiency of 20%. Read More

Electronic Components & Devices

Low Noise Wideband Amplifier operates from DC-50 GHz.

May 1, 2015

Measuring 1.97 x 1.30 x 0.1 mm, Model MAAM-011109-DIE provides 50 Ω matching and typical return losses better than 15 dB. Solution includes gate bias adjust to change current setting for power or temperature, gain trim that allows 15 dB of gain control, and temperature-compensated power detector that provides DC voltage in relation to output power. With up to +23 dBm of saturated power, amplifier is suited for broadband applications such as test and measurement and electronic countermeasures. Read More