Electronic Amplifiers

Electronic Components & Devices

S-Band 7 W Pulsed High Power Amplifier features balanced design.

January 21, 2015

Covering 2.7–3.0 GHz from 6 mm PQFN 28-lead SMT package, MAAP-011022 can be used individually or in complete MACOM chipset solution for Civil Air Traffic Control and Weather Radar applications. Encapsulated IC, which offers 7 W of pulsed power and 23 dB small signal gain, provides rugged performance under load mismatch. Other features include +10 V bias operation, 50 Ω impedance, and 0.5 µm pHEMT process. Design is RoHS compliant and 260° reflow compatible. Read More

Electronic Components & Devices

Portable, 3U, 500 W Power Amplifier covers 80-1,000 MHz.

January 21, 2015

Delivering 500 W of broadband output power, Model 2175 comes in air-cooled chassis and provides single RF input and output as well as user-selectable configuration and operation in AGC (Automatic Gain Control), ALC (Automatic Level Control), and MGC (Manual Gain Control) modes. Use of high-voltage RF transistors (LDMOS) lend to ruggedness, while multi-faceted Monitoring and Control (M&C) UIs include Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen. Read More

Electronic Components & Devices

Power Amplifier delivers 1 kW broadband output power.

January 21, 2015

Housed in 5U, air-cooled chassis, Model 2170 features single RF input and output operating over 1-3 GHz frequency range. Unit offers user-selectable configuration and operation in 3 different modes, including Automatic Gain Control, Automatic Level Control, and Manual Gain Control. Equipped with Web browser, TCP/IP Ethernet, RS-485 interface, and front panel touchscreen display, amplifier is suitable for test and measurement, electronic warfare, and communications applications. Read More

Electronic Components & Devices, Communication Systems & Equipment

High Linearity 4 W Power Amplifier suits Ka-band applications.

January 20, 2015

Offered in bare die format and 5 x 5 mm, 32-lead QFN package, MAAP-011139 has 29–31 GHz frequency range and delivers 24 dB of linear gain, 4 W of saturated output power, and 23% efficiency. This high-linearity power amplifier, suited for Ka-band, high-data density satellite communications, provides >27 dBm Pout/tone while maintaining IM3 levels of 30 dBc. Rating for input and output return loss is 10 dB. Read More

Electronic Components & Devices, Communication Systems & Equipment

ULP Precision CMOS Op Amps deliver zero drift operation.

December 30, 2014

Targeting front-end amplifier circuits and power management designs, NCS325 and NCS333 offer respective quiescent currents of 21 and 17 µA at 3.3 V and enhance accuracy of motor control feedback and power supply control loops. Products, operating with 350 kHz gain bandwidth with peak to peak noise down to 1.1 µV from 0.1–10 Hz, provide rail-to-rail input and output performance and are optimized for 1.8–5.5 V operation. Max input offset voltage is 10 µV, and offset temperature drift is 30 nV/°C. Read More

Communication Systems & Equipment, Electronic Components & Devices

GaN Low-Noise Amplifier features 23 dB gain.

December 24, 2014

Able to survive input power levels up to 5 W without front-end limiter, 4–8 GHz Model CMD219 features output of 1 dB, compression point of +18 dBm, and noise figure of 1.1 dB across operating bandwidth. Typical bias conditions are Vdd = 10 V at 100 mA and Vgg = -2.3 V, although Vdd can vary from 5–28 V. Suitable applications include point-to-point and point-to-multipoint radios, military and space, and test instrumentation. Read More

Electronic Components & Devices

Solid-State Pulse Amplifier features dual-mode operation.

December 18, 2014

Combining continuous and pulse operating modes, S31-500-900P performs 600 V/m radar pulse radiated immunity testing in 0.8–3.1 GHz band. GaN-based amplifier has 500 W continuous rating and can deliver >900 W in pulse mode. Peak power rating allows unit to generate 600 V/m test with either high gain narrow band antennas or single wide band antenna. Features include pulse width up to 570 µsec, PRF range of 0–100 KHz, and rise/fall times of 15 nsec at duty cycles up to 10% in pulse mode. Read More

Communication Systems & Equipment, Electronic Components & Devices

Low-Noise GaN LNA features high power survivability.

December 15, 2014

Supplied in die form, CMD218 offers gain of 22 dB, output of 1 dB, compression point of +19.5 dBm, and noise figure of <1.25 dB across 5–9 GHz frequency range. Unit can, without input limiter, survive incident power levels up to 5 W without any degradation in performance. With 50 Ω matched design that eliminates need for external DC blocks and RF port matching, LNA operates from 5–28 V supply and draws 100 mA typ quiescent current. Negative gate voltage is required for proper operation. Read More