Electronic Amplifiers

Electronic Components & Devices, Sensors, Monitors & Transducers

Sample Kits enable current limiter, thermistor testing.

August 11, 2016

Standard, Mega, Mini, and Sensor Sample Kits enable designers to test Ametherm inrush current limiters and NTC sensing thermistors. Standard consists of 9 SL series 120 and 240 Vac limiters. For single- and 3-phase input voltages up to 680 Vac, Mega provides 5 MegaSurge™ series limiters. Sensor kit of NTC sensing thermistors includes 4 probe assembly types – ring lug, threaded hex nut and tip, epoxy, and steel housing – and one device from ACCU-Curve series of interchangeable thermistors. Read More

Electronic Components & Devices

RF Power Amplifier supports electronic warfare applications.

August 1, 2016

When driven with 0 dBm RF input signal, NuPower™ Model 12A03A delivers minimum of 5 W RF power from 1.0–2.5 GHz. Unit is also available in 30 dBm (1 Watt) input power level version, allowing plug-and-play use with various data transceivers, such as L-3 Communications Bandit radio. Housed in 1.8 x 1.8 x 0.5 in. rugged aluminum chassis, amplifier features low current draw of 0.85 A at +28 Vdc, supporting array of RF communications, telemetry, and electronic warfare applications. Read More

Electronic Components & Devices

First Remote Live Demo at EMC 2016

July 19, 2016

Consider the Possibilities Empower RF Systems is conducting remote live demonstrations of our broadband, high power amplifier at the IEEE EMC Symposium at the Shaw Centre in Ottawa July 26 – 28th , 2016, Booth 322. The amplifier will be housed in Los Angeles while viewed in the Ottawa exhibit venue with live streaming video while controlling the amplifier from the exhibit floor through a... Read More

Electronic Components & Devices

RF Power Amplifier covers 1,700-2,400 MHz frequency range.

July 18, 2016

With module efficiencies of 35–55%, NuPower™ 12D05A provides saturated RF power of 35 Watts in L-band and 20 Watts in S-band. Amplifier offers 44 dB of RF gain with nominal input drive level of 0 dBm. Aluminum chassis, measuring 4.50 x 3.50 x 0.61 in., provides heat dissipation and is small enough for integration into air- or ground-based tactical, test, or training platforms. Device can be used with communications and telemetry systems as well as electronic warfare systems. Read More

Electronic Components & Devices

GaN Power Amplifiers offer high gain at up to 7.5 GHz.

July 14, 2016

Featuring high gain levels of 43–60 dB across broad frequency bands from 30 MHz to 7.5 GHz, Solid State GaN RF Amplifiers are suited for commercial and military radar, jamming systems, medical imaging, communications, and electronic warfare. Saturated output power levels range from 10–100 W with up to 35% Power Added Efficiency. All have single voltage supplies which are internally regulated. Amplifiers also feature harmonic response of -15 to -20 dBc under worst case conditions. Read More

Communication Systems & Equipment, Electronic Components & Devices

Radiation Tolerant 36 V In-Amps integrate differential ADC driver.

July 13, 2016

Wafer-by-wafer guaranteed to 75 krad (Si) with low dose rate exposure of 10 mrad/sec, ISL70617SEH differential input, rail-to-rail output instrumentation amplifier (in-amp) serves communication satellite applications. Silicon on insulator process provides SEL and SEB robustness of 60 MeV in heavy ion environments, while <10 µsec SET performance eliminates need for extra filtering. ISL70517SEH offers similar features but implements differential input and rail-to-rail single-ended output. Read More

Communication Systems & Equipment, Electronic Components & Devices

Wideband Distributed Amplifier offers 14 dB gain, high linearity.

July 7, 2016

From 2–20 GHz, CMD238 BroadRange Distributed Amplifier™ delivers 14 dB of gain with output P1dB of +26 dBm, output IP3 of +34 dBm, and 2nd harmonic level of -33 dBc. This GaAs MMIC (monolithic microwave integrated circuit) distributed amplifier, which operates from 5–8 V power supply, is pin-compatible with CMM0014 amplifier and features 50 Ω matched design that eliminates need for external DC blocks and RF port matching. Read More

Communication Systems & Equipment, Electronic Components & Devices

Wideband Driver Amplifier features 26-35 GHz frequency range.

July 5, 2016

Operating from single 5 V supply and drawing just 90 mA typical, Model CMD243 offers 15.5 dB of gain with output P1dB compression point of +21 dBm. Balanced design provides good VSWR matching, along with optimized stability and gain flatness. Self-biasing GaAs MMIC amplifier is a 50 Ω matched design, which eliminates need for external DC blocks and RF port matching. Applications include military, space, and communications systems where small size and high linearity are necessary. Read More

Electronic Components & Devices

Nasa Awards Nuwaves Engineering 2016 SBIR Phase I Contract for Development of K-Band Power Amplifier for Satellite Communications Data Links on Unmanned Aircraft Systems

July 1, 2016

Middletown, Ohio – NuWaves Engineering, a veteran-owned small business providing advanced radio frequency (RF) and microwave solutions, today announced a Small Business Innovation Research (SBIR) Phase I contract from NASA to research and develop a high-efficiency Ku- or Ka-band RF power amplifier (PA) monolithic microwave integrated circuit (MMIC) device for over-the-horizon (OTH) command and... Read More

Communication Systems & Equipment, Electronic Components & Devices

Distributed Amplifiers offer positive gain slope.

June 29, 2016

From DC–22 GHz, ultra-wideband BroadRange™ CMD240 delivers over 15 dB of gain with mid-band noise figure of 2.2 dB, output 1 dB compression point of 19 dBm, and output IP3 of 28 dBm at 10 GHz with 5 V supply. Wideband BroadRange™ CMD241, operating from 2–22 GHz with low mid-band noise figure of 2.3 dB, features output IP3 of +28 dBm, low supply current of 74 mA, and 13 dB of gain with max RF input power of +20 dBm. Both are 50 Ω matched designs and can operate off 3–8 V power supply. Read More

Electronic Components & Devices

Broadband RF PA Module delivers multi-octave operation.

June 9, 2016

Suited for VHF to S-band transmitters, transceivers, and data links that do not require linear performance, NuPower™ 11C01A (NW-PA-11C01A) delivers 10 W min and 15 W typ of RF power from 225–2,400 MHz when driven with 0 dBm (1 mW) RF input signal. Features include 25%–45% power efficiency, 40 dB RF gain, <2 µsec standby to transmit switching speed, and +11 to +32 Vdc supply range. Rugged aluminum chassis measures 3.00 x 2.00 x 0.65 in., and max baseplate temperature rating is +85°C.
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Electronic Components & Devices

Integra Completes 1kW and 200W GaN Radar Amplifiers for Aerospace Applications in P-band

June 6, 2016

San Francisco, CA (USA) –  Integra Technologies, Inc. (ITI), a leading designer manufacturer of high-power RF transistors, pallets and amplifiers, announces the completion of a 1kW GaN high efficiency amplifier, IGNP0450M1000, for aerospace radar applications, funded by NASA/JPL through SBIR Phase I and II grant awards. An additional 200W high efficiency GaN amplifier for shorter-term... Read More

Electrical Equipment & Systems, Electronic Components & Devices

Microsemi Showcases Leadership in Differentiated Products with Introduction of 15 New RF, Microwave and Millimeter Wave Devices at IMS 2016

May 26, 2016

New Product Exhibitions Featured in San Francisco, California May 22-27 ALISO VIEJO, Calif. - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it will feature 15 new products from its radio frequency (RF), millimeter wave integrated circuits (ICs), monolithic microwave integrated... Read More

Communication Systems & Equipment, Electrical Equipment & Systems, Electronic Components & Devices

Switches and MMIC Amplifiers deliver ultra wideband operation.

May 26, 2016

Operating from DC to 18 GHz, non-reflective GaAs switches CMD234C4 (SP3T) and CMD235C4 (SP5T) provide 40 dB isolation @ 10 GHz and respective insertion loss values of 2 and 2.5 dB. Distributed amplifiers CMD240 (DC to 22 GHz) and CMD241 (2–22 GHz) offer respective noise figures down to 2.2 and 2.3 dB and gain values of 15 and 13.5 dB. Operating from 26–35 GHz, CMD243 wideband balanced driver amplifier offers 15.5 dB gain and noise figure of 4.4 dB. Read More

Communication Systems & Equipment, Electronic Components & Devices

GaN X-band SSPAs offer integrated monitoring and protection.

May 26, 2016

Measuring 220 x 150 x 41 mm excluding heatsink, Series DM-X300-01 delivers output power up to 300 W and covers 8.4–9.6 GHz band. Pulsed solid state amplifiers include key parameter monitoring with self-protect functions which are activated if SSPA detects that VSWR threshold, duty cycle, or current limits have been exceeded. Devices also alert host system when low output power condition is detected, or when temperature limits have been exceeded. Interface to host system is provided via Ethernet. Read More

Electronic Components & Devices

RF Digital VGAs feature constant linearity technology.

May 26, 2016

With K(LIN)™ constant linearity technology, F1455 Series Variable Gain Amplifiers maintain 38 dBm output third order intercept point for first 12 dB of gain control range. Devices feature broadband 1,400–2,300 MHz operation, 4 dB NF at max gain (2,000 MHz), and 32 dB flat, temperature invariant max gain. Available in a 6 x 6 mm 28-QFN package, amplifiers utilize SPI interface for gain control and are suitable for driving power amplifiers in wireless base station transmitters. Read More

Computer Hardware & Peripherals, Electronic Components & Devices, Optics & Photonics, Test & Measuring Instruments

Advanced Millimeter-wave Assemblies (MMWAs) Introduced by Millitech at IMS

May 25, 2016

Northampton, MA – Smiths Microwave Subsystems is pleased to announce that Millitech, the leader in millimeter-wave technology, will be reviewing a number of their latest and most advanced millimeter-wave assemblies (MMWAs) at the International Microwave Symposium (IMS) May 23-26th in San Francisco, California, in booth #930. Responding to growing demands for E-, W-, and V-band products, the... Read More

Controls & Controllers, Electronic Components & Devices

Peregrine Semiconductor's MPAC-Doherty Device Optimizes RFHIC's GaN Amplifiers in IMS Booth Demonstration

May 25, 2016

The Live Demo Shows How Quickly and Reliably Peregrine's MPAC-Doherty Device Optimizes an RFHIC GaN Doherty Amplifier at 3.5 GHz SAN FRANCISCO - IMS 2016 - In booth #2129 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the demonstration of a Peregrine monolithic phase and amplitude controller (MPAC)-Doherty with an... Read More

Communication Systems & Equipment, Electronic Components & Devices

BroadRange Distributed Amplifiers(TM) Feature Industry Leading Dynamic Range over Ultra-Wide Bandwidths

May 20, 2016

Chelmsford, MA – Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs), has developed a growing family of distributed amplifiers, called BroadRange Distributed Amplifiers™, with bandwidths from DC to 50 GHz. The distributed amplifiers provide industry leading performance in terms of dynamic range, frequency bandwidth and power consumption. ... Read More

Electronic Components & Devices

Live Demo at IMS 2016

May 18, 2016

Bring your operational scenario to IMS and let us run it on our multipurpose 1 to 3 GHz high power amplifier! Empower RF Systems is once again conducting live demonstrations of broadband, high power amplifiers with compelling performance, industry leading small size, IOT interface, and user selectable functionality that dares to challenge legacy products offered in the market. Next appearing... Read More