GigOptix
Palo Alto, CA 94303
Jul 22, 2008 Comprised of 4 x 10.3 Gbps Transimpedance Limiting Amplifier (HXR4104) and 4 x 10.3 Gbps Vertical Cavity Surface Emitting Laser driver (HXT4104), HXR/T4104 chipset is fully programmable via 2-wire interface. This enables control of signal peaking, modulation, and average currents while also providing access to temperature and output power monitoring on channel-by-channel basis. Parallel VCSEL driver is compatible with QSFP Multi-Source Agreement (MSA).

Leadis Technology, Inc.
Sunnyvale, CA 94085
Jul 22, 2008 Suited for power-sensitive applications with headphone output, LDS9505 and LDS9504 incorporate Gmax(TM) technology for Class-G amplification and offer 5.5 mW/channel power dissipation to promote battery run-time. Adaptive Rail Amplifier and other technologies eliminate pop and click as well as zipper-noise concerns. Requiring 4 mW quiescent power, standalone products are capable of up to 63 mW in single-ended stereo and 106 mW in mono BTL output, with SNR of 102 dB.

Texas Instruments, Inc. (TI)
Dallas, TX 75243-4136
Jul 18, 2008 Providing 1.7 W/channel output drive across 8 W load, TPA2016D2 features programmable dynamic range compression that automatically adjusts audio to desired loudness range while protecting speaker and preventing clipping and distortion. Users can select gains from -28 to +30 dB as well as program attack/hold/release times, compression ratios, and noise threshold values. Suited for wireless handsets, notebook PCs, and portable DVD players, it comes in 2.2 x 2.2 mm NanoFree(TM) WCSP package.

Microchip Technology, Inc.
Chandler, AZ 85224 6199
Jul 15, 2008 Suited for portable, battery-powered instrumentation devices, MCP6V01/2/3 auto-zero op amps have operating voltage range of 1.8-5.5 V and quiescent current of 300 µA. Rail-to-rail I/O structure, combined with self-correcting architecture and input offset voltage of 2 µV max, provide flexibility with regards to gain control and dynamic range. All models are supplied in 8-pin SOIC packages, with MCP6V02 also offered in 4 x 4 mm DFN package.

Texas Instruments, Inc. (TI)
Dallas, TX 75243-4136
Jul 10, 2008 Available in 24-TSSOP package, Models TPA3121D2 and TPA3124D2 are 15 W, stereo analog-input Class-D amplifiers that feature single-ended architecture to save board area by eliminating 2 LC output filters. Along with single-ended stereo support, outputs can be configured in BTL mode to support 30 W mono applications, such as wireless speakers or subwoofers. Units are protected against over/under-voltage, over-temperature, and short circuit. Model TPA3124D2 features mute time of 30 µsec.

Linear Technology Corp.
Milpitas, CA 95035-7417
Jul 08, 2008 Gain-configurable with 2 resistors, Military Plastic-grade LT6107 survives harsh environments and operates with common mode voltages up to 36 V. It has offset voltage of less than 400 µV and can accept full-scale differential input of 500 mV, resulting in minimum dynamic range of 1,250:1. Because input bias current is no more than 130 nA, bias current is eliminated as error source. Solution withstands common mode voltages to 44 V and responds to sudden signal changes within 3.5 µsec.

Anadigics, Inc.
Warren, NJ 07059
Jul 03, 2008 Operating in 5-85 MHz frequency range, Model ARA2017 supports DOCSIS 3.0-specified signal levels of +64 dBmV while minimizing harmonic distortion and output noise levels. Linear amplifier features 33 dB of RF gain at minimum attenuation, and includes digitally controlled, multi-stage precision step attenuator that provides up to 58 dB of attenuation in 2 dB increments. Requiring single 5 V supply, device is offered in 28-pin 5 x 5 x 1 mm QFN package.

RF Micro Devices, Inc.
Greensboro, NC 27409-9421
Jul 03, 2008 Suited for use as power doubler amplifiers in line amplification and HFC optical nodes, Models D10040200PH1 and D10040230PH1 feature 20 and 23 dB of gain, respectively. Available in industry-standard SOT115J module package, both utilize ultra-linear, high-efficiency GaN process technology, and feature +24 Vdc supply voltage and maximum CTB of -74 dBc and CSO of -68 dBc. Model D10040200PH1 has CIN of 65 dB minimum, while D10040230PH1 has 63 dB minimum.

Opto Diode Corp.
Newbury Park, CA 91320
Jul 01, 2008 Hermetically sealed in TO-39 can for integration into new or existing systems, 5 mm² Model ODA-5WB-100K offers wavelength response of 28 V/mW at 450 nm, responsivity range from 400-1,100 nm, and peak spectral response of 940 nm. Blue/green-enhanced device features storage and operating temperatures from -25 to +100°C, and is suited for industrial and biomedical applications, such as fluorescence and phosphorescence.

Tyco Electronics Corp.
Harrisburg, PA 17105-3608
Jul 01, 2008 Supplied in 2 x 2.5 mm, PQFN plastic package, MAAP-008516 is RoHS-compliant, 3-stage, 2.4-2.5 GHz linear power amplifier with typical linear gain of 30 dB at operating voltage of 3.3 V. Integrated power detector promotes accurate power control, while separate power mode pin lends to current savings in power shutdown mode. Respectively, unit generates 16.5 and 21.5 dBm linear output power for 802.11g and 802.11b applications while drawing 80 and 95 mA current.

RF Micro Devices, Inc.
Greensboro, NC 27409-9421
Jun 30, 2008 Based on gallium nitride process technology, 400 W GaN high power amplifiers operate over frequency range of 2.9-3.5 GHz from 65 V supply, delivering power gain of 10.5 dB. Housed in thermally efficient, ceramic hermetically sealed 24 x 17.4 mm package, units offer MTTF of 1E6 hr at 200°C junction temperature. In S-band radar applications, HPAs are combined in larger 2.5 kW pallet amplifier assemblies with as many as 8 or more HPAs utilized in each pallet.

Cree Inc.
Durham, NC 27703
Jun 26, 2008 Integrating GaN RF transistor technology, 5 W distributed amplifier, Model CMPA0060005 operates from DC to 6 GHz, while 25 W reactively matched Model CMPA2560025 operates from 2.5-6 GHz. Both MMICs are suitable for variety of applications where high power over broad bandwidths is required. Pair of CMPA2560025s, driven by CMPA0060005 can provide over 40 dB gain with output power up to 50 W in 2.5-6 GHz band.

Spectrum Microwave, Inc.
Palm Bay, FL 32905
Jun 26, 2008 Featuring lightweight surface mount package with optional high performance heatsink, QB-900 series of high power amplifiers offer wide band performance of 2-6 GHz, and do not require external circuitry. They include internal blocking caps, biasing circuitry, and RF matching. Units are suited for range of applications including jammers, pre-amp drivers, and other high-end applications.

Texas Instruments, Inc. (TI)
Dallas, TX 75243-4136
Jun 24, 2008 Able to deliver bandwidth of 850 MHz at gain of +2 V/V and slew rate of 2,900 V/µsec, dual-channel OPA2695 provides fast signal conditioning with linearity to minimize distortion for optimal signal fidelity and filtering. Single or dual supply voltage options and gain capability give engineers flexibility to adjust parameters to address specific application needs, while current-feedback architecture with optimized differential pin-out facilitates PCB layout efforts.

ClearOne Communications, Inc.
Salt Lake City, UT 84119
Jun 24, 2008 Suited for conferencing, rich media presentations, and sound reinforcement applications, Converge(TM) PA 2250 and PA 4160 feature rugged design, low noise fans, and front panel indicators for signal, active, and protection. Model PA 2250 is 2-channel amplifier that provides 250 W/channel, while PA 4160 is 4-channel amplifier providing 160 W/channel. Two rack-units tall, amplifiers can connect to other professional audio systems, such as Converge Pro and Converge SR 1212.

Amalfi Semiconductor
Los Gatos, CA 95032-5405
Jun 20, 2008 Based on CMOS silicon architecture that minimizes battery's electrical current requirements in cellular phones, quad-band Stratos(TM) AM8901 includes extended efficiency mode and 2,000 V ESD protection on all pins, including RF pins. AdaptiveRF Architecture enables device to achieve optimum performance in all real-world operations. It compensates for drift in performance over time and other factors such as process, temperature, frequency, and voltage.

LSI Corp. of America
Minneapolis, MN 55441
Jun 19, 2008 Usable in both 2.5 and 3.5 in hard disk drives, PA8800 preamplifier utilizes silicon-germanium processes to deliver operating speeds at 3.3 Gpbs with low power consumption. Power-saving features help decrease heat dissipation for greater drive reliability.

Falco Systems
Amsterdam 1082 LV  Netherlands
Jun 17, 2008 Operating from low voltage dc power supply or battery, models WMA-02 and WMA-005 amplifiers provide bipolar high voltage at their output. Battery powered units feature noise specifications less than 4 mVrms, and internal high voltage generators that are designed to not spread magnetic interference. WMA-02 delivers -175 to +175 V and has dc to 13 kHz range, while WMA-005 offers -75 to +75 V output voltage and covers dc to 20 kHz.

MAZeT GmbH
07745 Jena   Germany
Jun 17, 2008 With ability to amplify signals for multi-channel optical sensors, MTI04C has 4 TIA-based amplifier channels integrated on naked chip. It is programmed via 3 inputs with effect for all channels at same time, and is also programmable while in operation via MCUs. Unit is adjustable digitally in 2 steps (5 and 80 pF) in accordance with input capacity of photodiodes. Users can set trans-impedance of MTI04C to 8 different levels to make adjustments in accordance with application requirements.

Avago Technologies
San Jose, CA 95131
Jun 16, 2008 Supplied in miniature 0402 package with wirebonds, VMMK-2x03 amplifiers exhibit minimal signal loss and minimal parasitics. Solutions have integrated 50 ohm input and output matching networks, and all I/O is routed to backside of device wafer through via-holes. Optimized for 500 MHz to 12 GHz frequencies, products leverage WaferCap chip scale packaging technology and can be used in various positions in any radio architecture.