Electronic Components & Devices

Electronic Components & Devices

Power MOSFET (80 V) features low on-resistance.

November 24, 2010

Built on technology optimized for higher-voltage devices, ThunderFET® SiR880DP is 80 V power MOSFET with on-resistance specified at 4.5 V gate drive. Design enables lower gate drive losses in POL applications while allowing use of 5 V PWM ICs. Supplied in thermally enhanced PowerPAK® SO-8 package, product offers on-resistances of 8.5 mW at 4.5 V, 6.7 mW at 7.5 V, and 5.9 mW at 10 V. Typical on-resistance times gate charge is 161 at 4.5V. Read More

Electronic Components & Devices

Power MOSFET features max current of 24 A at +70°C.

November 24, 2010

Utilizing TrenchFET® Gen III technology, Model SiZ710DT combines 2 MOSFETs inside PowerPAIR® package measuring 6 x 3.7 mm. Low-side Channel 2 MOSFET utilizes optimized space from asymmetric structure, providing low on-resistance down to 3.3 mW at 10 V and 4.3 mW at 4.5 V. High-side Channel 1 MOSFET features on-resistance of 6.8 mW at 10 V and 9.0 mW at 4.5 V. Device is RoHS-compliant and halogen-free according to IEC 61249-2-21. Read More

Test & Measuring Instruments, Electronic Components & Devices

Low-Power, 16-Bit ADCs reduce energy draw to 185 mW.

November 24, 2010

Models LTC2165 and LTC2185 are comprised of single- and 2-channel simultaneous sampling parallel ADCs, respectively. They offer choice of full-rate CMOS or DDR CMOS/LVDS digital outputs with programmable digital output timing, programmable LVDS output current, and optional LVDS output termination. Also available, LTC2195 series includes 2-channel, simultaneous sampling ADCs with serial LVDS outputs. Each series offers sampling from 25-125 Msps. Read More

Electronic Components & Devices

Tantalum Capacitor features 3,300 µF, 4 V rating.

November 23, 2010

Featuring 2 mm profile and low ESR of 55 mW, PulseCap(TM) 3,300 µF Capacitor is suited for PCMCIA/USB wireless express cards and power backup in solid state drives. Surface mount unit uses undertab termination style, where traditional J leads are replaced by terminations that do not protrude outside of outline of case, enabling parts to be positioned closely together. Operating from -55 to +125°C, RoHS-compliant capacitor withstands soldering profile of 3x reflow at 260°C. Read More

Electronic Components & Devices, Controls & Controllers

Three-Phase Motor Drivers withstand voltages up to 500 V.

November 23, 2010

Employing small-footprint SOP package, SX68000M Series features 85-230 Vac input range and 1.5-2.5 A output current, providing IPM solution for controlling motor inverters used to drive small-size motors in residential and commercial appliances. ICs consist of all power elements needed to configure main circuit of inverter, including 6 MOSFETs and 2 pre-drive ICs. Read More

Electronic Components & Devices, Electrical Equipment & Systems

USB Power Charger IC includes 2.6 GHz signaling switch.

November 23, 2010

Featuring 3 x 3 mm WQFN package, TPS2540 integrates current-limited power switch and high-bandwidth 2.6 GHz signaling switch optimized for USB interface. Allowing for charging of portable devices that draw power via USB, unit supports USB charging modes worldwide. Product is suitable for USB ports in host applications such as AC wall adapters, desktop PCs, docking stations, and auto charging accessories, and also supports range of TI USB 2.0 and 3.0 transceivers. Read More

Electronic Components & Devices, Controls & Controllers

Single-Chip Motor Controller allows full digital control.

November 23, 2010

Digital SPIN (dSPIN(TM)) monolithic motor-control IC combines digital control, analog measurement, and power electronic circuitry for controlling stepper motors using ST's BCD fabrication process. Voltage-mode control algorithm smoothes motor movement and feeds motor phases with accurate sinusoidal waveform, resulting in position resolution of 128 microsteps/step. Over-temperature, low bus voltage, and non-dissipative over-current protection and motor stall detection are included. Read More

Electronic Components & Devices

N-Channel Power MOSFET features 15.12 ohm-nC FOM.

November 23, 2010

Housed in TO-247 package, 600 V/47 A Model SiHG47N60S features ultra-low maximum on-resistance of 0.07 W at 10 V gate drive and optimized gate drive of 216 nC. Unit is produced using Super Junction technology, which minimizes on-state resistance and withstands high energy pulse in avalanche and commutation mode. Compliant to RoHS Directive 2002/95/EC, MOSFET is suited for solar and wind inverters, as well as telecom, server, and motor control power applications. Read More