Fujitsu Limited    New York, NY 10017
Feb 21, 2007 Supplied on 1.8 x 1.8 x 0.8 mm die fabricated in 90 nm CMOS process, CMOS integrated circuit (IC) enables implementation of 40 Gbps optical serializer-deserializer (SerDes) modules and demultiplexes to 16 x 2.5 Gbps. Solution features 3x oversampling architecture and dissipates 0.91 W while operating at 40 Gbps. While input data is sampled using 24-phase distributed VCO, digital CDR recovers 16 bits and 2.5 GHz clock by processing samples.

Xilinx, Inc.    San Jose, CA 95124 3400
Feb 21, 2007 Domain-optimized, MIL-grade Virtex(TM)-4 QPRO(TM) Series includes XQ4VLX25 with 24,192 logic cells, XQ4VLX60 with 59,904 logic cells for logic-intensive designs, and XQ4VSX55 featuring 55,296 logic cells for digital signal processing. Features such as logic fabric, block memory, clock management, and XtremeDSP slices are performance-matched to support up to 500 MHz clock speed. Hardened IP blocks coupled with 90 nm triple-oxide technology minimize power consumption.

Cree, Inc.    Durham, NC 27703
Feb 20, 2007 Operating at 1,200 V, Zero Recovery® Model CPW2-1200S050 produces minimal EMI and simplifies Power Factor Correction Boost design by eliminating need for snubbers. Featuring SiC die size of 8.2 x 4 mm, 50 A silicon carbide rectifier is suited for use in solar and wind power converters, industrial motor drives, and electric vehicles.

Broadcom Corp.    San Jose, CA 95110
Feb 20, 2007 Built on 65 nm CMOS process, BCM21331 integrates EDGE RF transceiver, all analog and digital baseband functions, as well as multimedia and connectivity support on one chip. It also provides on-chip support for cameras up to 3.2 megapixels as well as video streaming and capture up to 30 fps at QVGA resolution using H.264 hardware accelerator. Additional support is provided for transfer of multimedia files to and from handset via 480 Mbps USB 2.0 port with integrated PHY functionality.

Broadcom Corp.    San Jose, CA 95110
Feb 20, 2007 Built on 65 nm CMOS process, BCM2153 integrates 7.2 Mbps, Category 8 HSDPA baseband modem with application, audio, and multimedia processors on one chip. Mixed-signal device also features M-Stream signal enhancement technology, multiple connectivity options, and 480 Mbps USB 2.0 port with integrated PHY. Suited for mobile handsets, this HEDGE (HSDPA + EDGE) multimedia baseband processor provides complete support for all legacy GSM cellular technologies.

Surf Communication Solutions, Inc.    Arlington, MA 02474-8401
Feb 20, 2007 Optimized for mobile applications, RoHS-compliant SurfExpress/PCIe(TM) combines VoIP, audio, video, and data processing capabilities. Single-lane, half-length, full-height board provides 2 Gigabit Ethernet ports and CT bus for additional TDM interfaces. It supports 1,088 voice ports on single PCI slot and up to 224 low-resolution video ports on single PCI slot. SurfDocker(TM) modular plug-in carries up to 4 pairs of mixed types of DSPs and supports variety of configurations.

QUALCOMM, Inc.    San Diego, CA 92121
Feb 20, 2007 Designed for handset manufacturers, Universal Broadcast Modem (UBM) chip delivers support for FLO(TM) technology, Digital Video Broadcasting - Handheld (DVB-H), and one-segment Integrated Services Digital Broadcasting - Terrestrial (ISDB-T). Single-chip solution supports entire UHF bandwidth, from 470-862 MHz, as well as single- and multi-frequency networks. Solution also offers tunable modes: 5, 6, 7, and 8 MHz channel bandwidths.

QUALCOMM, Inc.    San Diego, CA 92121
Feb 20, 2007 Designed to enable devices that extend desktop experience to mobile devices, 11 x 11 mm Mobile Station Modem(TM) MSM7225(TM) features dual-processor architecture for third-party OS support. Included UMTS Release 6 modem features 7.2 Mbps HSDPA, 5.76 Mbps HSUPA, and Multimedia Broadcast Multicast Service (MBMS). Along with integrated assisted and standalone GPS, solution also offers direct broadcast support for MediaFLO, DVB-H, and ISDB-T as well as range of peripherals.

Runcom Technologies Ltd.    Rishon Lezion 75658  Israel
Feb 20, 2007 Comprised of NXP's WiMAX MIMO transceiver UXA23465 and proprietary RNA250 baseband ASIC, chipset provides complete Wave-2 Mobile WiMAX PHY, MAC, and RF Front-end solution for fixed, nomadic, portable, and mobile terminals. ICs include all features necessary to meet Wave-2 Profile of broadband Mobile WiMAX technology in PC Cards, CPEs, PDAs, handsets, and laptops.

Texas Instruments, Inc., Semiconductors    Dallas, TX 75243
Feb 20, 2007 Built on 65 nm process, TCS2305 and TCS2315 are LoCosto ULC (ultra low-cost) products that provide GSM solution for handsets. Solutions promote voice clarity and loudness as well as provide support for features such as color display, FM stereo, MP3 ring tones, camera, and MP3 playback. Each single-chip platform utilizes DRP(TM) single-chip technology, which integrates RF transceiver and analog codec with digital baseband to minimize board space and promote battery life.

Toshiba America Electronic Components (TAEC)    Irvine, CA 92618-1811
Feb 20, 2007 Supplied in 64-pin, 5 x 5 x 1 mm BGA package, TC358730XBG Mobile Industry Processor Interface (MIPI(TM)) display buffer/controller simplifies design of mobile phones. Its 8 Mb eDRAM provides single-buffer operation for images with up to VGA resolution and automatic double buffering when handling 2 images with resolutions up to HVGA. Along with support for various host and display interfaces, controller offers Magic Square(TM) algorithm for image quality and PWM output for backlight control.

Microchip Technology, Inc.    Chandler, AZ 85224 6199
Feb 20, 2007 Adaptable to wide variety of meter designs, Model MCP3909 has two 16-bit delta-sigma ADCs onboard that can be accessed through its SPI interface, while simultaneously providing pulse output with frequency proportional to active-power calculation. Housed in 24-pin SSOP package, unit features 0.1% typical measurement error over 1,000:1 dynamic range and consumes only 4 mA, making it suited for single- and 3-phase industrial and consumer energy meters.

ON Semiconductor, LLC    Phoenix, AZ 85008
Feb 20, 2007 Supplied in 1.2 x 1.2 x 0.5 mm SOT-723 packages, NTK313xx devices feature low RDS(on) values for over 200 mA operating current and 1.5 V low gate voltage to allow direct control from power management ASIC or other controllers. Series, which utilizes Trench technology and offers integrated ESD protection, is suited for load/power switching applications and small signal interface switching. While NTK3134N us 20 V, 890 mA, N-Channel MOSFET, NTK3139P is -20 V, -780 mA, P-Channel MOSFET.

RF Micro Devices, Inc.    Greensboro, NC 27409-9421
Feb 20, 2007 Featuring power flattening technology and V(BAT) tracking, Model RF3196 utilizes PowerStar® power control technology to optimize TRP and SAR performance. RoHS-compliant unit minimizes current variation by 50% into non-ideal 3:1 loads. Optimized Total Radiated Power maximizes network efficiency, network coverage, and data throughput rates while minimizing frequency of dropped calls.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 19, 2007 Available in 8 case sizes from 4.0 x 4.0 x 5.3 mm to 10 x 10 x 14 mm, 153 CRV Series features voltage ratings from 6.3-100 V and minimum operating life from 2,000-3,000 hr at 105°C. Charge- and discharge-proof, units withstand surge voltages up to 1.15 times rated voltage and reverse voltages up to 1 V. RoHS-compliant capacitors are suited for filtering, smoothing, buffering, and decoupling in industrial controls, domestic appliances, automotive systems, and telecom equipment.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 19, 2007 Measuring 0.40 x 0.40 in. with 0.157 in. height profile, Series IFLP4040DZ01 is specified for saturation currents from 20-36 A and inductance values from 0.34-0.62 µH with standard inductance tolerance of ±20%. Featuring 0.88 mW DCR and ferrite as its core material, inductors handle high transient current spikes without hard saturation and operate at frequency up to 5 MHz. Units are housed in RoHS-compliant package and operate from 55 to +125°C.

Vishay Intertechnology, Inc.    Malvern, PA 19355 2143
Feb 16, 2007 With capacitance ranges of 10-2,700 pF and voltage ratings from 1,000-1,500 Vdc, HVArc Guard Models VJ0805, VJ1206, and VJ1210 feature internal design that prevents surface arc-over at high voltages and facilitates use of small case sizes in high voltage products. Surface-mount C0G devices eliminate need for conformal coating, and are optimized for applications such as buck and boost dc-dc converters, voltage multipliers, and lighting ballast circuits.

Cornell Dubilier    Liberty, SC 29657
Feb 16, 2007 Utilizing metallized polypropylene dielectric, Type UNL Series provides voltage from 400-1,500 V, continuous currents beyond 20 A, and extremely low ESRs from 6 mW. Self-healing, nonpolar units are housed in 35 x 50 mm plastic snap-in style case with capacitance ranges from 4.7-35 µF and operating temperature of -55 to 85°C.

C & D Technologies    Mansfield, MA 02048-1151
Feb 16, 2007 Housed in 7.0 x 5.9 x 4.4 mm package with industry standard pad layout, surface-mount Series 5000 minimizes noise in EMC-sensitive applications. Units offer inductance values from 0.47-4.7 mH and dc current rating up to 700 mA. Able to attenuate at frequencies up to 100 MHz, devices are suited for use in low current dc input switching power supplies and telecom applications. Operating from -40 to +85°C, chokes are RoHS and JEDEC J-STD-020-C reflow compliant.

LEDtronics, Inc.    Torrance, CA 90505
Feb 16, 2007 Offered as alternative to 15T6 or 20T6 incandescent exit sign bulbs, solid-state EXL-W Series features flame-resistant polycarbonate resin construction that promotes visibility even in brightly lit situations. Bulbs exhibit average lifespan of 50,000+ hr and come in base options of S6 Candelabra Screw, 15 mm Intermediate Screw, and 15 mm DC Bayonet. All bulbs light up on 120 V and put out 12 lumens of unfiltered light. Depending on base style, LEDs consume 1.10 or 2.20 W of energy.