Axcelis Technologies Inc.    Beverly, MA 01915 1053
May 09, 2013 Incorporating single wafer LINAC technology, Purion XE ion implanter enables high-yield manufacture of sub-16 nm planar and 3D devices. System incorporates 500+ wafers/hr end station and advanced filtration systems. Latter optimize beam purity, while angle control system and constant focal length scanning deliver precise and repeatable dopant placement. Scanned spot beam architecture enables control of damage engineering as well as other advanced processes.

FEI Company    Hillsboro, OR 97124
Jun 15, 2011 Vion(TM) plasma focused ion beam system is used in advanced integrated circuit (IC) packaging applications that use larger scale structures to connect multiple chips in tightly integrated packages. System quickly delivers site-specific cross-sectional analysis to accelerate failure analysis of bumps, wire bonds, through silicon vias (TSVs), and stacked die; as well as site specific removal of package and other materials to enable failure analysis and fault isolation on buried die.

Ametek, Inc.    Wallingford, CT 06492
May 24, 2011 Intended for range of micro and nanoanalytical applications, SXFiveFE offers full automation for long-term unattended operation and features combination of field emission electron column and CAMECA spectrometers. Field emission source and electron column result in versatile microanalyzer with capabilities for quantitative microanalysis and x-ray imaging at sub-micron spatial resolution. Configurations include SXFive with W and LaB6 sources and SXFiveFE with FE source.

Prosolia, Inc.    Indianapolis, IN 46202
Dec 18, 2008 Based on Desorption Electrospray Ionization (DESI) technology, Omni Spray 2-D Ion Source has automated surface platform, which can handle samples up to 76 x 114 mm, size of standard 96 well micro-titer plate. Unit achieves step resolution down to 50 µm and and has open access sample stage that fits up to 3 standard Omni Slides(TM) or one Omni Slide - 96. Software controlled unit can perform surface imaging experiments at atmospheric pressure.

Spellman High Voltage Electronics Corp.    Hauppauge, NY 11788
Aug 18, 2008 Used to power mass spectrometry microchannel plate detectors and electron multiplier applications, MCP Series features 3 kV, 330 µA output section that is floating and isolated to 16 kV. This facilitates referencing of output to voltage potentials other than ground and also provides inherent polarity reversibility. Customer-provided analog 0-10 Vdc programming signal will adjust supply from 0-100% of rated output voltage, and corresponding voltage feedback monitor signal is provided.

Spellman High Voltage Electronics Corp.    Hauppauge, NY 11788
Aug 07, 2008 XRB Monoblock® 80 kV, 100 W X-Ray source integrates high-voltage power supply, filament power supply, X-Ray tube, and control electronics. Additionally, fully sealed unit features PFC universal input, analog and digital (RS-232) interface, as well as options for fan- or cone-shaped X-Ray beam geometry. It can be mounted in any physical orientation and suits plating measurement, fill-level confirmation, and inspection applications.

UltraVolt Inc.    Ronkonkoma, NY 11779
Jun 25, 2007 Rated for 0-5 Vdc @ 0-3 A, center-tapped FIL-5V-3A operates in constant current (CC) regulated mode or constant voltage (CV) regulated mode and features automatic crossover between both. Output load regulation is less than 0.5% in CV mode and under 0.05% in CC mode. Between +26.4 and +21.6 Vdc, output line regulation is less than 0.01%. Product is suited for beam applications from electron guns to ion beams in equipment from focused ion beam workstations to mass spectrometers.

FEI Co.    Hillsboro, OR 97124-5830
Mar 05, 2007 Eliminating boundaries imposed by existing high vacuum systems, DualBeam(TM) Quanta(TM) 3D FEG features high-current ion column for rapid, site-specific cross-sections of samples to reveal sub-surface structures and features. System's electron source optimizes SEM imaging, while electron beam current enables high throughput spectroscopy.

Axcelis Technologies Inc.    Beverly, MA 01915 1053
Apr 26, 2002 GSD Ultra and HC3 Ultra implanters enable high-volume production of ultra shallow junctions. Designed for 200 mm applications, GSD Ultra is based on GSD multi-wafer endstation. HC3 Ultra is designed for 300 mm manufacturing and offers high current processing from 0.2 to 80 keV. Packaging design of both implanters allows for easy maintenance access and maximum tool uptime.