Highland Technology, Inc.    San Francisco, CA 94103
Apr 25, 2012 With 24 isolated channels provided, V545 generalized DSP-based sinewave processor is intended for both simulation and acquisition of LVDTs, RVDTs, synchros, and resolvers. Each channel can be signal source or measurement input. Per channel features include true RMS AC measurement, frequency measurement, programmable phase shift, and phase-sensitive detector. Users can program relationship between input and output channels, allowing simulation and measurement of range of inductive transducers.

Integrated Silicon Solution, Inc. (ISSI)    Santa Clara, CA 95054 3311
Apr 11, 2012 Offering 576 Mb density, RLDRAM® 3 Memory is suited for 100G networking applications such as packet optical transport, carrier Ethernet switches and routers, and core and edge routers. Product offers Multibank WRITE feature that allows random READ accesses every 2 ns, which is on par with high-speed SRAM but with density that comes with DRAM. RLDRAM® 3 Memory is available in industrial and commercial temperature ranges and in leaded and lead-free packages.

Alliance Memory, Inc.    San Carlos, CA 94070
Apr 04, 2012 Rated for -40 to +85°C, Models AS4C4M16S-6TIN, AS4C8M16S-6TIN, and AS4C16M16S-6TIN offer densities of 64, 128, and 256 Mb, respectively. Devices feature fast access time from clock down to 4.5 ns at 5 ns clock cycle, and clock rates of 166 MHz. Internally configured as 4 banks of 1M, 2M, or 4M word x 16 bits with synchronous interface, SDRs operate from +3.3 V power supply. Units provide programmable read or write burst lengths of 1, 2, 4, 8, or full-page, with burst termination option.

Super Talent Technology    San Jose, CA 95132
Mar 19, 2012 Operating at 1.5 V, DDR3 RDIMMs are designed for servers that require more DRAM capacity. Model W13RB8G4S is 1,333 MHz, DDR3 RDIMM with 8 GB density. Supplied in 1Gx72 configuration with 512Mx4 chip configuration, it features PC3-10600 data rate. Model W10RC16G4S is 1,066 MHz, quad rank DDR3 RDIMM with 16 GB density. Supplied in 2Gx72 configuration with 1Gx4 chip configuration, it features PC3-8500 data rate. Both modules integrate heat spreader.

Super Talent Technology    San Jose, CA 95132
Mar 19, 2012 By running at speeds up to 2,133 MHz, Quadra(TM) Series DDR3 Kit enables PC builders to fully utilize 6-core processor-based motherboards. This over-clocked quad-channel DDR3 kit includes modules that support Sandy Bridge E-based motherboards, enabling support of full 16 MB of DDR3 DRAM at over-clocked speeds of 2,133 MHz. Also, unique heat sink enables this solution to efficiently operate with i7-3960X 6-Core processors.

Fujitsu Semiconductor Europe GmbH    Langen D-63225  Germany
Mar 13, 2012 Featuring I²C serial interfaces at operating frequency of 400 kHz, MB85RC16V and MB85RC64V operate from -40 to +85°C and respectively cover densities of 16 and 64 kbit. Reliability is evidenced via 10-year data retention at 85°C as well as endurance of 1 trillion read/write cycles. Both models accommodate common CMOS voltage range of 3.3-5 V while allowing +10% voltage swing tolerance, enabling system builders to consolidate designs around single FRAM for multiple platforms.

Ramtron International Corp.    Colorado Springs, CO 80921
Feb 01, 2012 FM25P16 is 16 Kb serial nonvolatile memory that features serial peripheral interface and full bus operating speed up to 1 MHz. Low-energy device employs ferroelectric process that yields virtually unlimited endurance of 100 trillion read/write cycles and reliable data retention for 10 years. Manufactured on low-power 130 nm CMOS manufacturing process, it is targeted to power sensitive systems including wireless sensor nodes, remote metering, and health and fitness products.

Ramtron International Corp.    Colorado Springs, CO 80921
Jan 13, 2012 Manufactured on low-power 130 nm CMOS manufacturing process, FM25V20, 2 MB serial F-RAM (ferroelectric random access memory) device includes serial I2C, serial SPI, and parallel memories. It features wide voltage operation of 2.0-3.6 V, standby current of 100 µA, and sleep mode current of 3 µA. FM25V20 features 100-trillion read/write cycles and is designed for applications including industrial controls, metering, medical, military, gaming, and computing applications.

Strontium Americas, Inc    Fremont, CA 94538
Nov 29, 2011 Featuring 1,600 MHz operating speed, 8 GB DDR3 memory modules are fully downward compatible with 1,333 MHz and run at 1.5 V. ROHS-compliant products, certified for Apple products, are built to JEDEC specs and come in single-, dual-, and triple-channel kits. Featuring aluminum head spreader that optimizes heat dissipation, modules help users who need to work with large data sets.

Microsemi Corp.    Scottsdale, AZ 85251
Nov 15, 2011 Housed in 23 x 32 mm single PBGA package and offered as x64/x72 UDIMM/SODIMM unit, COTS DDR3 SDRAM Device supports data rates of 800, 1,066, and 1,333 Mbps. Module operates on 1.5 V power supply and is designed for fly-by routing. Available in commercial and industrial temperature ranges, device supports high-performance processors and chipsets in mission-critical applications such as avionics, UAVs, missile systems, and other defense applications.

Ramtron International Corp.    Colorado Springs, CO 80921
Oct 12, 2011 Operating at 5 V over -40 to +85°C range, nonvolatile FRAM - 4 Kb FM25040C, 16 Kb FM25C160C, and 64 Kb FM25640C - feature 1 trillion read/write cycles and perform write operations at bus speeds up to 20 MHz. Devices allow next bus cycle to commence immediately; data is written to memory array immediately after being received by device. Supplied in 8-pin, RoHS-compliant SOIC packag, products also feature write protection scheme that prevents inadvertent data writes to memory.

Strontium Americas, Inc    Fremont, CA 94538
Aug 19, 2011 Compatible with JEDEC standards, RoHS-compliant 1,600 MHz speed grade DDR3 memory modules come in 2 and 4 GB capacities for use in desktops and laptops. Products are compatible with motherboards that support Sandy Bridge platform and allow users to increase system performance without having to overclock. Specifications include base memory frequency of 1,600 MHz, latency of 9-9-9-24, and supply voltage of 1.5 V.

Netlist, Inc    Irvine, CA 92618
Aug 12, 2011 Utilizing Vault cache-to-flash controller, NVvault(TM) DDR3 works in conjunction with general purpose CPUs, RAID on Chip ICs, and other devices with DDR3 interface. System eliminates batteries in traditional data preservation schemes by utilizing ultra-capacitor for backup power, extending data recovery window beyond 24-hr limitation of some battery designs. Available in 2 and 4 GB capacities, NVvault DDR3 is JEDEC-compatible with standard DDR3 RDIMM interface supporting up to 3 DIMMs per channel.

Netlist, Inc    Irvine, CA 92618
Aug 09, 2011 Suited for server blades, Storage Bridge-Bay applications, telecom servers, switches, and routers, 16 GB 4Rank VLP RDIMM leverages Planar-X technology, which doubles number of DRAM components within standard DIMM dimensions using 2 PCB connected by flex circuit. This enables use of 72 two Gb DRAM in 36 four Gb dual die packages. Module features JEDEC compatible form factor and offers 1 DPC 1333 MT/s memory bandwidth support.

Ramtron International Corp.    Colorado Springs, CO 80921
Jul 12, 2011 With 100 µA active current at 100 kHz and 4 µA typical standby current, 5 V Model FM24C64C performs at bus speed without write delays and supports up to 1 trillion read/write cycles. Housed in RoHS-compliant 8-pin SOIC package with industrial operating temperature of -40 to +85°C, Model FM24C64C features serial I2C interface and is suitable for industrial controls, metering, medical, military, gaming, and computing applications.

Fujitsu Semiconductor Europe GmbH    Langen D-63225  Germany
Jul 07, 2011 Offered in 256, 128, and 64 Kbit densities, MB85RSxxx series comes in 8-pin plastic SOP packages with standard memory pin assignment fully compatible with E2PROM devices. SPI FRAMs (Ferroelectric Random Access Memory), operating from 3.0-3.6 V, provide endurance of 10 billion write/read cycles as well as data retention of 10 years at 55°C. Series has 25 MHz max operating frequency and are suited for low power applications.

Patriot Memory    Fremont, CA 94538
Jul 06, 2011 Wildfire series utilizes SandForce® SF-2200 processor, enabling up to 555 MB/sec sequential read and up to 520 MB/sec sequential write speeds. Available in 120 and 240 GB capacities, SSDs come with SATA 6.0 Gbps interface, up to 85K 4K random write IOPS, TRIM support, and v3.1.9 firmware. While 2.5 in. form factor is compatible with notebooks and select desktops, 2.5-3.5 in. mounting bracket is also included for compatibility with standard hard drive mounting.

Integrated Silicon Solution, Inc. (ISSI)    Santa Clara, CA 95054 3311
Jun 16, 2011 Available in 4 models, Mobile 512 Mb DRAMs come in 32 M x 16 or 16 M x 32 configurations with DDR speeds up to 333 Mbps per data line. Units use JEDEC standard 1.8 V supply and include power-saving features such as temperature-compensated self-refresh, partial array self-refresh, deep power down, and adjustable driver strength. Operating from -40 to 105°C, Mobile DRAMs are suited for automotive telematics, portable medical imaging and analysis equipment, smart phones, and smart meters.

Spansion Inc.    Sunnyvale, CA 94088 3453
May 23, 2011 Built on 65 nm MirrorBit charge trapping technology, Spansion GL NOR Flash memory delivers page-mode read performance to 98.5 MBps and is available with customized software drivers and Flash file system software. BGA package package, measuring 9 x 9 mm, suits space-constrained automotive, consumer electronics, gaming, and telnet applications. Product secures customer IP with sector read protection and 1,024 Kb secured silicon sector.

Ramtron International Corp.    Colorado Springs, CO 80921
May 06, 2011 Suited for sensitive time keeping applications, FM31T378 comes in 14-pin SOIC package that integrates RTC, TCXO, 256 Kb non-volatile FRAM, and peripheral functions. Integration helps electronics manufacturers reduce part inventory, BOM, and board space requirements as well as manufacturing steps and potential points of failure. Supporting MCU- or MPU-based designs, included processor supervisor detects power supply faults and will initiate reset to escape software lockup conditions.