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Computer Hardware & Peripherals -> Computer Boards & Cards -> Memory Boards & Cards -> RAM Modules SIMMs & DIMMs


RAM Modules SIMMs & DIMMs




(Showing headlines 1 - 20)   more ....

RDIMM and LRDIMM Chipsets support Intel Xeon processors.

Montage Technology Group    San Jose, CA 95110
Apr 11, 2014 Fully compliant with DDR4 JEDEC 1.0 specification, DDR4 RDIMM and LRDIMM Chipsets support Intel's Xeon Processor ES-2600 V3 product family. Products include DDR4 Registering Clock Driver and DDR4 Data Buffers. DDR4 LRDIMM, with one central RCD and 9 Data Buffers for each individual byte lane, can operate at 1 or 2 speed grades faster than comparable RDIMM. Chipsets target high performance computing, enterprise server, and data/cloud market segments.

High-Speed CMOS SDRAMs come in TFBGA, TSOP II package options.

High-Speed CMOS SDRAMs come in TFBGA, TSOP II package options.

Alliance Memory, Inc.    San Carlos, CA 94070
Mar 31, 2014 High-speed CMOS synchronous DRAMs (SDRAMs) — 2M x 32 AS4C2M32S-6TIN/-6BIN, 4M x 32 AS4C4M32S-6TIN/-6BIN, and 8M x 32 AS4C8M32S-7BCN — are x32 devices that come in 90-ball, 8 x 13 x 1.2 mm TFBGA and 86-pin, 400 mil plastic TSOP II packages. Products offer access time from clock down to 5.4 nsec as well as programmable read or write burst lengths of 1, 2, 4, 8, or full page with burst termination option. Auto pre-charge and auto- or self-refresh functions are included.

DDR3 RDIMM Modules boost Mac Pro memory capacity up to 128 GB.

DDR3 RDIMM Modules boost Mac Pro memory capacity up to 128 GB.

Transcend, Inc    Orange, CA 92867
Mar 20, 2014 Offering 4 user-upgradeable slots, 16 and 32 GB DDR3 Registered DIMM (RDIMM) modules can boost total memory capacity of Intel® Xeon® E5 3.5 GHz, 6-Core; 3.0 GHz, 8-Core; and 2.7 GHz, 12-Core based Apple Mac Pro 2013 systems to 64, 96, and 128 GB. This enhances performance during such tasks as 3D graphic design, 4K video editing, and gaming by ensuring system can handle such RAM-intensive software applications as Apple Final Cut Pro X and Adobe After Effects CC.

CMOS DDR2 SDRAMs offer 400 MHz clock rate, 800 Mbps/pin data rate.

CMOS DDR2 SDRAMs offer 400 MHz clock rate, 800 Mbps/pin data rate.

Alliance Memory, Inc.    San Carlos, CA 94070
Mar 18, 2014 Supplied in 60-ball, 8 x 10 x 1.2 mm and 84-ball, 8x 12.5 x 1.2 mm FBGA packages, AS4C32M16D2 (512 Mb) and AS4C64M16D2/AS4C128M8D2 (1 Gb) are respectively internally configured as 4 banks of 8M words x 16 bits and 8 banks of 8M x 16 bits/16M x 8 bits. Features include programmable read or write burst lengths of 4 or 8, auto precharge function, refresh functions, and programmable mode register. All models have synchronous interface and operate from single +1.8 V (±0.1 V) supply.

Memory Modules feature low profile design.

Virtium    Rancho Santa Margarita, CA 92688
Mar 07, 2014 Supplied in Ultra-Low Profile 0.70 in. and Very-Low Profile 0.738 in. form factors, respectively, 16 GB and 32 GB DDR3 RDIMM products are suitable for server blades, telecom, and networking applications that require low profile memory. Both are ECC Registered and are available in 1.35 and 1.5 V configurations. In addition, both series can be screened for extended temperature operation.

Modular VGA Cards come in single and dual configurations.

Eurocom Corp.    Nepean K2E 7R4  Canada
Mar 06, 2014 Measuring 82 x 105 mm with 100 W rating, MXM 3.0b Graphics Module is designed for 256-bit memory interface and larger notebooks. MXM 3.0a Graphics Module, measuring 82 x 70 mm with max power rating of 55 W, is designed for graphics cards with 64 or 128-bit memory interface. Both modular graphics solutions provide potential for small form factor, military, embedded systems as well as upgrade path to users looking to improve performance of their current notebook.

I2C-Equipped, 1 Mbit FRAM can replace EEPROMs for data capture.

I2C-Equipped, 1 Mbit FRAM can replace EEPROMs for data capture.

Fujitsu Corp.    Sunnyvale, CA 94088
Feb 27, 2014 Suited for applications requiring frequent rewriting of data, MB85RC1MT operates from 1.8–3.3 V in temperatures from -40 to +85°C and supports high-speed mode that enables read and write operations at frequencies of 3.4 and 1 MHz. Non-volatility means data is retained even when power is switched off, and random access to memory cells enables accelerated data writing. Rated for 10 trillion write-erase cycles, FRAM features 1 Mbit of memory and I˛C serial interface.

SDRAM Chips support industrial applications.

SDRAM Chips support industrial applications.

I'M Intelligent Memory Limited    Kwai Chung   Hong Kong (prc)
Feb 03, 2014 Operating on standard supply voltage of 3.3 V, SDRAM Chips are available in capacities from 256–512 Mb. Model with 256 Mb capacity is available in x8 and x16 configurations, while 512 Mb version comes in x16 configuration. In addition to standard 54-pin TSOP-II package, all products are also offered in 8 x 8 mm 54-ball FBGA package. Pin-outs, timings, and functionalities are JEDEC-compliant.

VPX Module houses 2.5 in. SATA solid state drives.

VPX Module houses 2.5 in. SATA solid state drives.

Curtiss-Wright Controls Defense Solutions    Littleton, MA 01460
Dec 30, 2013 Configurable with 128 GB to 1 TB SSD storage capacities, 3U VPX Vortex FSM Carrier Module is suited for systems that require data transport, such as mission critical computers, sensor processors, mission recorders, instrumentation recorders, and embedded ISR applications. To ensure data security, internal SSD can be provided with Secure Erase or MIL Secure Erase features. When provisioned, these features can be initiated by ATA command over SATA lane.

Memory Module features 0.72 in. form factor.

Virtium    Rancho Santa Margarita, CA 92688
Dec 02, 2013 Designed to meet demand for optimized airflow in space-constrained systems, 16 GB DDR3 VLP Mini-RDIMM features layout that minimizes overall thickness while doubling density. Module is available in 1.5 and 1.35 V configurations and can be screened for extended temperature operation. Device is suited for many networking and high-end medical applications where low-profile and small size are key requirements.

CMOS Synchronous DRAM comes in 2M x 32, 4M x 32 configurations.

Alliance Memory, Inc.    San Carlos, CA 94070
Nov 15, 2013 While AS4C2M32S-7TCN (2M x 32 bit device) comes in 90-ball, 8 x 13 x 1.2 mm TFBGA package, AS4C4M32S-7TCN (4M x 32 bit device) comes in 86-pin, 400 mil plastic TSOP II package. Access times for these SDRAMs are 5.4 and 5.5 nsec, respectively, while clock rates are 143 and 166 MHz. Operation is from single +3.3 V ±0.3 V power supply over 0 to +70°C range. Features include programmable read or write burst lengths. auto pre-charge function, refresh functions, and programmable mode register.

NAND Flash Memory Modules comply with JEDEC e-MMC v5.0.

Toshiba America Electronic Components (TAEC)    Irvine, CA 92618-1811
Nov 08, 2013 Sealed in 11.5 x 13 mm FBGA package, 16 GB Model THGBMBG7D2KBAIL and 32 GB Model THGBMBG8D4KBAIR integrate NAND chips fabricated with 19 nm process technology and dedicated controller. JEDEC e-MMC V5.0 compliant interface handles essential functions, including writing block management, error correction, and driver software. By applying HS400 high speed interface standard, Models THGBMBG7D2KBAIL and THGBMBG8D4KBAIR offer write speeds of 50 and 90 MBps, respectively, with read speed of 270 MBps.

DIMM Modules support high-powered servers.

DIMM Modules support high-powered servers.

Transcend, Inc    Orange, CA 92867
Oct 22, 2013 Designed to support server virtualization, 4 GB DDR3-1866 Registered DIMM and 4 GB DDR3-1866 unbuffered ECC DIMM memory modules are suited for use in Intel Xeon E5-2600 v2 processor-based servers. Each module is rated at 1,866 MHz with latency of 13-13-13 and operating voltage of 1.5 V. Built-in Error Correcting Code function monitors data being transferred in and out of memory and corrects any errors found. Modules fully comply with JEDEC standards.

CMOS DDR1 Synchronous DRAMs offer data rate of 400 Mbps/pin.

Alliance Memory, Inc.    San Carlos, CA 94070
Sep 27, 2013 Housed in 66-pin TSOP II package, Models AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, and AS4C32M16D1 offer densities of 64, 128, 256, and 512 Mb, respectively. Devices feature clock rate of 200 MHz, commercial temperature range of 0–70°C, and programmable read or write burst lengths of 2, 4, or 8. Auto pre-charge function provides self-timed row pre-charge initiated at end of burst sequence. Internally configured as 4 banks of 1M, 2M, 4M, or 8M word x 16 bits, SDRAMs operate from +2.5 V power supply.

DRAM Modules operate at 1,866 MHz speeds.

InnoDisk Corp.-USA    Fremont, CA 94539
Sep 11, 2013 Available for Intel® Xeon® Processor E5-2600 v2 Series, DDR3 DRAM comes in RDIMM, LRDIMM, and UDIMM memory module form factors and in 4, 8, and 16 GB capacities. Units feature dual and quad channel support and are compatible with ASUS, Gigabyte, Intel, Supermicro, and Tyan based Romley platforms. Applications include high performance computing, servers, and data storage for cloud and data centers.

CMOS SRAMs feature fast access time of 10 ns.

Alliance Memory, Inc.    San Carlos, CA 94070
Jun 20, 2013 Offered in 48-pin, 12 x 20 mm TSOP-1 package, 16 M Models AS7C316096A (2,048 K x 8) and AS7C316098A (1,024 K x 16) provide low power consumption with operating currents of 90 mA and standby currents of 4 mA. Model AS7C316098A is additionally available in 48-ball, 6 x 8 mm TFBGA package. Operating from 3.3 V power supply, ICs have stable current within temperature range of -40 to +85°C. Devices feature fully static operation, tri-state output, and data retention voltage of 1.5 V min.

Design Kit optimizes all SoC processor cores.

Synopsys, Inc.    Mountain View, CA 94043 4033
Jun 18, 2013 Available as add-on to DesignWare® Duet Embedded Memory and Logic Library IP, DesignWare HPC Design Kit contains suite of high-speed and high-density memory instances and standard cell libraries that enable SoC designers to optimize on-chip CPU, GPU, and DSP IP cores for maximum speed, smallest area, or lowest power. To minimize dynamic and leakage power as well as die area, kit provides area-optimized and multi-bit flip-flops and 2-port SRAM.

DDR4 Registered DIMMs can enhance server design, performance.

InnoDisk Corp.-USA    Fremont, CA 94539
May 28, 2013 Intended for use in server companies' next-generation systems, DDR4 (Double Data Rate 4) RDIMM (Registered Dual Inline Memory Module) features 3.2 Gbps data transfer rate, memory bus speeds that start at 2,133 MHz, and power envelope of 1.2 V. Products operate at 1.35 V, which helps reduce heat output and subsequently extends lifetime of system components. Maximum capacity of 128 GB per chip fosters optimized module construction and internal airflow.

Low-Power 32M CMOS SRAM comes in 12 x 20 mm TSOP-I package.

Low-Power 32M CMOS SRAM comes in 12 x 20 mm TSOP-I package.

Alliance Memory, Inc.    San Carlos, CA 94070
May 13, 2013 Operating from a single 2.7–3.6 V supply and offering 55 nsec access time, AS6C3216 is optimized for low-power industrial, telecom, medical, and automotive applications. This 32M IC (2M x 16/4M x 8 switchable), suited for battery backup non-volatile memory, offers fully static operation and tri-state output. Typical operating current is 45 mA, and standby current is 10 µA. All inputs and outputs are fully TTL-compatible, and current is stable within -40 to +85°C operating range.

High-Speed CMOS SDRAM comes in 128 and 256 Mb densities.

Alliance Memory, Inc.    San Carlos, CA 94070
Apr 19, 2013 Offered in 54-ball, 8 x 8 x 1.2 mm TFBGA package, AS4C8M16S-7BCN and AS4C16M16S-7BCN are, respectively, 8M and 16M x 16 SDRAMs that feature fast access time from clock down to 4.5 ns at 5 ns clock and clock rates of 143 MHz. Lead (Pb)- and halogen-free products operate from single +3.3 V (±0.3 V) power supply and provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with burst termination option. Auto pre-charge function and refresh functions are also standard.




(Showing headlines 1 - 20)   more ....



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