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Computer Hardware & Peripherals -> Computer Boards & Cards -> Memory Boards & Cards

Memory Boards & Cards

(Showing headlines 1 - 20)   more ....

RDIMM and LRDIMM Chipsets support Intel Xeon processors.

Montage Technology Group    San Jose, CA 95110
Apr 11, 2014 Fully compliant with DDR4 JEDEC 1.0 specification, DDR4 RDIMM and LRDIMM Chipsets support Intel's Xeon Processor ES-2600 V3 product family. Products include DDR4 Registering Clock Driver and DDR4 Data Buffers. DDR4 LRDIMM, with one central RCD and 9 Data Buffers for each individual byte lane, can operate at 1 or 2 speed grades faster than comparable RDIMM. Chipsets target high performance computing, enterprise server, and data/cloud market segments.

UHS-I Speed Class 3 Cards support 4K video capture.

UHS-I Speed Class 3 Cards support 4K video capture.

Transcend Corp.    Orange, CA 92867
Mar 31, 2014 Featuring full support for Ultra High Speed Class 3 specification, SDXC/SDHC UHS-I Cards are capable of reaching read and write speeds up to 95 Mbps and 85 Mbps. In devices that do not support UHS-I specification, cards offer constant write speeds of at least 10 Mbps, which makes them suitable for Full HD video recording as well as fast-action consecutive shooting. Capacities ranging from 32–128 GB enable cards to handle capacity requirements of professional photography and filmmaking.

High-Speed CMOS SDRAMs come in TFBGA, TSOP II package options.

High-Speed CMOS SDRAMs come in TFBGA, TSOP II package options.

Alliance Memory, Inc.    San Carlos, CA 94070
Mar 31, 2014 High-speed CMOS synchronous DRAMs (SDRAMs) — 2M x 32 AS4C2M32S-6TIN/-6BIN, 4M x 32 AS4C4M32S-6TIN/-6BIN, and 8M x 32 AS4C8M32S-7BCN — are x32 devices that come in 90-ball, 8 x 13 x 1.2 mm TFBGA and 86-pin, 400 mil plastic TSOP II packages. Products offer access time from clock down to 5.4 nsec as well as programmable read or write burst lengths of 1, 2, 4, 8, or full page with burst termination option. Auto pre-charge and auto- or self-refresh functions are included.

DDR3 RDIMM Modules boost Mac Pro memory capacity up to 128 GB.

DDR3 RDIMM Modules boost Mac Pro memory capacity up to 128 GB.

Transcend, Inc    Orange, CA 92867
Mar 20, 2014 Offering 4 user-upgradeable slots, 16 and 32 GB DDR3 Registered DIMM (RDIMM) modules can boost total memory capacity of Intel® Xeon® E5 3.5 GHz, 6-Core; 3.0 GHz, 8-Core; and 2.7 GHz, 12-Core based Apple Mac Pro 2013 systems to 64, 96, and 128 GB. This enhances performance during such tasks as 3D graphic design, 4K video editing, and gaming by ensuring system can handle such RAM-intensive software applications as Apple Final Cut Pro X and Adobe After Effects CC.

CMOS DDR2 SDRAMs offer 400 MHz clock rate, 800 Mbps/pin data rate.

CMOS DDR2 SDRAMs offer 400 MHz clock rate, 800 Mbps/pin data rate.

Alliance Memory, Inc.    San Carlos, CA 94070
Mar 18, 2014 Supplied in 60-ball, 8 x 10 x 1.2 mm and 84-ball, 8x 12.5 x 1.2 mm FBGA packages, AS4C32M16D2 (512 Mb) and AS4C64M16D2/AS4C128M8D2 (1 Gb) are respectively internally configured as 4 banks of 8M words x 16 bits and 8 banks of 8M x 16 bits/16M x 8 bits. Features include programmable read or write burst lengths of 4 or 8, auto precharge function, refresh functions, and programmable mode register. All models have synchronous interface and operate from single +1.8 V (±0.1 V) supply.

Memory Modules feature low profile design.

Virtium    Rancho Santa Margarita, CA 92688
Mar 07, 2014 Supplied in Ultra-Low Profile 0.70 in. and Very-Low Profile 0.738 in. form factors, respectively, 16 GB and 32 GB DDR3 RDIMM products are suitable for server blades, telecom, and networking applications that require low profile memory. Both are ECC Registered and are available in 1.35 and 1.5 V configurations. In addition, both series can be screened for extended temperature operation.

Modular VGA Cards come in single and dual configurations.

Eurocom Corp.    Nepean K2E 7R4  Canada
Mar 06, 2014 Measuring 82 x 105 mm with 100 W rating, MXM 3.0b Graphics Module is designed for 256-bit memory interface and larger notebooks. MXM 3.0a Graphics Module, measuring 82 x 70 mm with max power rating of 55 W, is designed for graphics cards with 64 or 128-bit memory interface. Both modular graphics solutions provide potential for small form factor, military, embedded systems as well as upgrade path to users looking to improve performance of their current notebook.

I2C-Equipped, 1 Mbit FRAM can replace EEPROMs for data capture.

I2C-Equipped, 1 Mbit FRAM can replace EEPROMs for data capture.

Fujitsu Corp.    Sunnyvale, CA 94088
Feb 27, 2014 Suited for applications requiring frequent rewriting of data, MB85RC1MT operates from 1.8–3.3 V in temperatures from -40 to +85°C and supports high-speed mode that enables read and write operations at frequencies of 3.4 and 1 MHz. Non-volatility means data is retained even when power is switched off, and random access to memory cells enables accelerated data writing. Rated for 10 trillion write-erase cycles, FRAM features 1 Mbit of memory and I˛C serial interface.

SSD-Class eMMC Controller targets mobile storage market.

Marvell Semiconductor Inc.    Santa Clara, CA 95054
Feb 25, 2014 Supporting HS400 high data transfer speed and high capacity point with low latency, Model 88NV1088 eMMC 5.0 NAND Flash Controller fulfills needs of modern smartphones by replacing legacy micro-storage devices and maximizing storage endurance. Unit pumps up to 280 MBps read speed and delivers 5k+ random IOPS.

NOR Flash Memory features high-speed, 12-pin interface.

Spansion, LLC    Sunnyvale, CA 94088 3453
Feb 25, 2014 Supplied in 8 x 6 mm BGA package, Spansion® HyperFlash™ NOR Memory devices support read throughputs up to 333 MBps and feature interface that consists of 8-pin address/data bus, differential clock (2 signals), Chip Select, and Read Data Strobe for controller. Devices provide migration path from single Quad SPI to Dual Quad SPI to HyperFlash Memory. Offered in 3 and 1.8 V power supply versions, products come in 128, 256, and 512 Mb densities.

SDRAM Chips support industrial applications.

SDRAM Chips support industrial applications.

I'M Intelligent Memory Limited    Kwai Chung   Hong Kong (prc)
Feb 03, 2014 Operating on standard supply voltage of 3.3 V, SDRAM Chips are available in capacities from 256–512 Mb. Model with 256 Mb capacity is available in x8 and x16 configurations, while 512 Mb version comes in x16 configuration. In addition to standard 54-pin TSOP-II package, all products are also offered in 8 x 8 mm 54-ball FBGA package. Pin-outs, timings, and functionalities are JEDEC-compliant.

Bipolar PROMs serve as drop-in replacements for OEM devices.

e2v Technologies PLC    Chelmsford   United Kingdom
Jan 24, 2014 Manufactured on bipolar process, PROM Series has 4 members ranging in size from 2K (512 x 8) to 16K (2K x 8), with speeds from 90–125 ns. Units are One-Time Programmable devices, offering on-chip address decoding without separate fusing pins, 3-state outputs, and full TTL-compatibility. Available in variety of ceramic packages, including Leadless Chip Carriers, Dual Inline Packages, and Flatpacks, PROMs meet OEM specifications for military and aerospace applications.

VPX Module houses 2.5 in. SATA solid state drives.

VPX Module houses 2.5 in. SATA solid state drives.

Curtiss-Wright Controls Defense Solutions    Littleton, MA 01460
Dec 30, 2013 Configurable with 128 GB to 1 TB SSD storage capacities, 3U VPX Vortex FSM Carrier Module is suited for systems that require data transport, such as mission critical computers, sensor processors, mission recorders, instrumentation recorders, and embedded ISR applications. To ensure data security, internal SSD can be provided with Secure Erase or MIL Secure Erase features. When provisioned, these features can be initiated by ATA command over SATA lane.

Microcontroller Development Board includes GPS/GNSS receiver.

Microcontroller Development Board includes GPS/GNSS receiver.

SkyTraq Technology, Inc.    Hsinchu City 300   Taiwan
Dec 30, 2013 Based on 100 MHz, 32-bit RISC with 16 KB I-Cache and 2 KB D-Cache, NavSpark includes IEEE-754 compliant floating point unit, 1 MB flash memory, and 212 KB SRAM. NavSpark-BD model has GPS/Beidou receiver onboard for smartphone manufacturers, while NavSpark-GL includes GPS/GLONASS receiver. Housed in 7 x 7 mm QFN56 package, Venus822 quad-mode GPS/GNSS processor with extended I/O pins can simultaneously process 34 GPS/GLONASS/Beidou/Galile /QZSS/SBAS signals in parallel.

Memory Module features 0.72 in. form factor.

Virtium    Rancho Santa Margarita, CA 92688
Dec 02, 2013 Designed to meet demand for optimized airflow in space-constrained systems, 16 GB DDR3 VLP Mini-RDIMM features layout that minimizes overall thickness while doubling density. Module is available in 1.5 and 1.35 V configurations and can be screened for extended temperature operation. Device is suited for many networking and high-end medical applications where low-profile and small size are key requirements.

CMOS Synchronous DRAM comes in 2M x 32, 4M x 32 configurations.

Alliance Memory, Inc.    San Carlos, CA 94070
Nov 15, 2013 While AS4C2M32S-7TCN (2M x 32 bit device) comes in 90-ball, 8 x 13 x 1.2 mm TFBGA package, AS4C4M32S-7TCN (4M x 32 bit device) comes in 86-pin, 400 mil plastic TSOP II package. Access times for these SDRAMs are 5.4 and 5.5 nsec, respectively, while clock rates are 143 and 166 MHz. Operation is from single +3.3 V ±0.3 V power supply over 0 to +70°C range. Features include programmable read or write burst lengths. auto pre-charge function, refresh functions, and programmable mode register.

NAND Flash Memory Modules comply with JEDEC e-MMC v5.0.

Toshiba America Electronic Components (TAEC)    Irvine, CA 92618-1811
Nov 08, 2013 Sealed in 11.5 x 13 mm FBGA package, 16 GB Model THGBMBG7D2KBAIL and 32 GB Model THGBMBG8D4KBAIR integrate NAND chips fabricated with 19 nm process technology and dedicated controller. JEDEC e-MMC V5.0 compliant interface handles essential functions, including writing block management, error correction, and driver software. By applying HS400 high speed interface standard, Models THGBMBG7D2KBAIL and THGBMBG8D4KBAIR offer write speeds of 50 and 90 MBps, respectively, with read speed of 270 MBps.

Data Appliance combines analytics and in-memory technology.

Teradata Corp.    Dayton, OH 45342
Oct 28, 2013 With Teradata Intelligent Memory and Teradata Database, Teradata Data Warehouse Appliance 2750 offers self-managing, in-memory platform that accelerates delivery of analytics. Teradata Intelligent Memory automatically places most frequently used data into memory for fastest analytic performance, eliminating disk I/O bottlenecks and query delays. Appliance offers full redundancy, mission critical availability, scalability to handle petabytes of data, and granular integrated workload management.

DIMM Modules support high-powered servers.

DIMM Modules support high-powered servers.

Transcend, Inc    Orange, CA 92867
Oct 22, 2013 Designed to support server virtualization, 4 GB DDR3-1866 Registered DIMM and 4 GB DDR3-1866 unbuffered ECC DIMM memory modules are suited for use in Intel Xeon E5-2600 v2 processor-based servers. Each module is rated at 1,866 MHz with latency of 13-13-13 and operating voltage of 1.5 V. Built-in Error Correcting Code function monitors data being transferred in and out of memory and corrects any errors found. Modules fully comply with JEDEC standards.

CMOS DDR1 Synchronous DRAMs offer data rate of 400 Mbps/pin.

Alliance Memory, Inc.    San Carlos, CA 94070
Sep 27, 2013 Housed in 66-pin TSOP II package, Models AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, and AS4C32M16D1 offer densities of 64, 128, 256, and 512 Mb, respectively. Devices feature clock rate of 200 MHz, commercial temperature range of 0–70°C, and programmable read or write burst lengths of 2, 4, or 8. Auto pre-charge function provides self-timed row pre-charge initiated at end of burst sequence. Internally configured as 4 banks of 1M, 2M, 4M, or 8M word x 16 bits, SDRAMs operate from +2.5 V power supply.

(Showing headlines 1 - 20)   more ....

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