STARCHIP®    VOISIN LE BRETONNEUX   France
May 08, 2012 Designed to cover demands of USIM Java Card(TM) applications, SCF335H features unified flash memory that provides data retention exceeding 25 years; endurance of several hundred millions cycles is made possible by company's E3 (ECUBE) mechanisms. Memory size can be tailored to user requirements, and provided software tools are optimized to improve code density. SIM controller is based on Cortus APS3s 32-bit CPU, enabling 25 Mips @ 25 MHz.

Highland Technology, Inc.    San Francisco, CA 94103
Apr 25, 2012 With 24 isolated channels provided, V545 generalized DSP-based sinewave processor is intended for both simulation and acquisition of LVDTs, RVDTs, synchros, and resolvers. Each channel can be signal source or measurement input. Per channel features include true RMS AC measurement, frequency measurement, programmable phase shift, and phase-sensitive detector. Users can program relationship between input and output channels, allowing simulation and measurement of range of inductive transducers.

Integrated Silicon Solution, Inc. (ISSI)    Santa Clara, CA 95054 3311
Apr 11, 2012 Offering 576 Mb density, RLDRAM® 3 Memory is suited for 100G networking applications such as packet optical transport, carrier Ethernet switches and routers, and core and edge routers. Product offers Multibank WRITE feature that allows random READ accesses every 2 ns, which is on par with high-speed SRAM but with density that comes with DRAM. RLDRAM® 3 Memory is available in industrial and commercial temperature ranges and in leaded and lead-free packages.

Alliance Memory, Inc.    San Carlos, CA 94070
Apr 04, 2012 Rated for -40 to +85°C, Models AS4C4M16S-6TIN, AS4C8M16S-6TIN, and AS4C16M16S-6TIN offer densities of 64, 128, and 256 Mb, respectively. Devices feature fast access time from clock down to 4.5 ns at 5 ns clock cycle, and clock rates of 166 MHz. Internally configured as 4 banks of 1M, 2M, or 4M word x 16 bits with synchronous interface, SDRs operate from +3.3 V power supply. Units provide programmable read or write burst lengths of 1, 2, 4, 8, or full-page, with burst termination option.

TDK Corporation    Tokyo 103-8272  Japan
Mar 30, 2012 Housed in 17 x 17 mm 208-ball BGA package, eSSD Series comprises single chip 3 Gbps SSD with serial ATA interface that uses multi-chip technology to integrate TDK SSD controller GBDriver RS3 with NAND type flash memory in single package. Chip combines error correction capability of GBDriver RS3, power interruption tolerance algorithm, data randomizer, and auto refresh function. For security against data tampering and leaks, data in NAND Flash memory is encrypted.

Super Talent Technology    San Jose, CA 95132
Mar 19, 2012 Operating at 1.5 V, DDR3 RDIMMs are designed for servers that require more DRAM capacity. Model W13RB8G4S is 1,333 MHz, DDR3 RDIMM with 8 GB density. Supplied in 1Gx72 configuration with 512Mx4 chip configuration, it features PC3-10600 data rate. Model W10RC16G4S is 1,066 MHz, quad rank DDR3 RDIMM with 16 GB density. Supplied in 2Gx72 configuration with 1Gx4 chip configuration, it features PC3-8500 data rate. Both modules integrate heat spreader.

Super Talent Technology    San Jose, CA 95132
Mar 19, 2012 By running at speeds up to 2,133 MHz, Quadra(TM) Series DDR3 Kit enables PC builders to fully utilize 6-core processor-based motherboards. This over-clocked quad-channel DDR3 kit includes modules that support Sandy Bridge E-based motherboards, enabling support of full 16 MB of DDR3 DRAM at over-clocked speeds of 2,133 MHz. Also, unique heat sink enables this solution to efficiently operate with i7-3960X 6-Core processors.

Delkin Devices, Inc.    Poway, CA 92064
Mar 13, 2012 Available in 16, 32, and 64 GB capacities, CF 700X Flash Memory Cards offer transfer rates up to 105 Mbps and write speeds of 67 MBps, making them suitable for digital SLR applications and video modes such as slow-motion recording. UDMA 6 enabled cards are made in USA with carefully controlled components and design.

Fujitsu Semiconductor Europe GmbH    Langen D-63225  Germany
Mar 13, 2012 Featuring I²C serial interfaces at operating frequency of 400 kHz, MB85RC16V and MB85RC64V operate from -40 to +85°C and respectively cover densities of 16 and 64 kbit. Reliability is evidenced via 10-year data retention at 85°C as well as endurance of 1 trillion read/write cycles. Both models accommodate common CMOS voltage range of 3.3-5 V while allowing +10% voltage swing tolerance, enabling system builders to consolidate designs around single FRAM for multiple platforms.

Synopsys, Inc.    Mountain View, CA 94043 4033
Feb 17, 2012 Intended for TSMC's 28 nm high-performance (HP) and high-performance for mobile (HPM) processes, DesignWare® Embedded Memory and Logic Library IP deliver high performance with low leakage and active power. Libraries offer multiple, synthesis-friendly cell sets and router-friendly standard cell library architectures designed for multi-GHz performance, and memories enable flexible performance, power, and area tradeoffs for each memory used in SoC.

Ramtron International Corp.    Colorado Springs, CO 80921
Feb 01, 2012 FM25P16 is 16 Kb serial nonvolatile memory that features serial peripheral interface and full bus operating speed up to 1 MHz. Low-energy device employs ferroelectric process that yields virtually unlimited endurance of 100 trillion read/write cycles and reliable data retention for 10 years. Manufactured on low-power 130 nm CMOS manufacturing process, it is targeted to power sensitive systems including wireless sensor nodes, remote metering, and health and fitness products.

Ramtron International Corp.    Colorado Springs, CO 80921
Jan 13, 2012 Manufactured on low-power 130 nm CMOS manufacturing process, FM25V20, 2 MB serial F-RAM (ferroelectric random access memory) device includes serial I2C, serial SPI, and parallel memories. It features wide voltage operation of 2.0-3.6 V, standby current of 100 µA, and sleep mode current of 3 µA. FM25V20 features 100-trillion read/write cycles and is designed for applications including industrial controls, metering, medical, military, gaming, and computing applications.

Marvell Semiconductor Inc.    Santa Clara, CA 95054
Jan 11, 2012 Providing core building block for incrementally scalable native PCIe SSDs, Model 88NV9145 supports PCIe 2.0 x1 interface, ARM-based processor, external DDR interface, and 4 NAND flash channels with up to 4 Chip Selects per channel. In addition, each 88NV9145 can support up to 128 GB NAND capacity and has been tested to achieve up to 93,000 4K random read IOPS and 70,000 4K random write IOPS.

Transcend Corp.    Orange, CA 92867
Jan 05, 2012 Combining Class 10 specification with performance boost of Ultra-High Speed Class 1 (UHS-I), SDHC Class 10 UHS-I memory cards come in 8 and 16 GB capacities and optimize digital camera/camcorder operation via transfer speeds to 85 MBps. Up to 2 hr and 40 min of video can be stored when recording in 1920 x 1080 AVCHD format at 13 Mbps compression rate (up to 6 hr of HD video with reduced quality settings). Error Correction Code and RecoveRx(TM) software also come standard.

Seiko Instruments GmbH    Neu-Isenburg   Germany
Dec 15, 2011 Available in SOP-8, TSSOP-8, and TMSOP-8 packages, S-25AxxxB series achieves 300,000 data writes and 50 year data retention at 125°C. Memory comes in capacities from 8k-256k bits to accommodate needs of on-board systems that control car's operation and fuel consumption while ensuring passenger comfort and safety. Products utilize low power and voltage fluctuation detection circuits to prevent errors caused by electrical noise or power variations.

Strontium Americas, Inc    Fremont, CA 94538
Nov 29, 2011 Featuring 1,600 MHz operating speed, 8 GB DDR3 memory modules are fully downward compatible with 1,333 MHz and run at 1.5 V. ROHS-compliant products, certified for Apple products, are built to JEDEC specs and come in single-, dual-, and triple-channel kits. Featuring aluminum head spreader that optimizes heat dissipation, modules help users who need to work with large data sets.

Microsemi Corp.    Scottsdale, AZ 85251
Nov 15, 2011 Housed in 23 x 32 mm single PBGA package and offered as x64/x72 UDIMM/SODIMM unit, COTS DDR3 SDRAM Device supports data rates of 800, 1,066, and 1,333 Mbps. Module operates on 1.5 V power supply and is designed for fly-by routing. Available in commercial and industrial temperature ranges, device supports high-performance processors and chipsets in mission-critical applications such as avionics, UAVs, missile systems, and other defense applications.

Ramtron International Corp.    Colorado Springs, CO 80921
Oct 12, 2011 Operating at 5 V over -40 to +85°C range, nonvolatile FRAM - 4 Kb FM25040C, 16 Kb FM25C160C, and 64 Kb FM25640C - feature 1 trillion read/write cycles and perform write operations at bus speeds up to 20 MHz. Devices allow next bus cycle to commence immediately; data is written to memory array immediately after being received by device. Supplied in 8-pin, RoHS-compliant SOIC packag, products also feature write protection scheme that prevents inadvertent data writes to memory.

STMicroelectronics    Lexington, MA 02421
Sep 14, 2011 Featuring dual interface, Model M24LR64 can transmit and receive information from application to smartphone containing NFC technology or to industrial RFID reader, allowing for transactions, data exchange, object identification and tracking to occur rapidly. Operating on Android OS, Dual EE app connects NFC-enabled smartphone to prototype temperature recorder featuring M24LR64 memory, providing data transfer and storage for medical devices, home appliances, consumer electronics, and meters.

Strontium Americas, Inc    Fremont, CA 94538
Aug 19, 2011 Compatible with JEDEC standards, RoHS-compliant 1,600 MHz speed grade DDR3 memory modules come in 2 and 4 GB capacities for use in desktops and laptops. Products are compatible with motherboards that support Sandy Bridge platform and allow users to increase system performance without having to overclock. Specifications include base memory frequency of 1,600 MHz, latency of 9-9-9-24, and supply voltage of 1.5 V.