Netlist, Inc
Irvine, CA 92618
Nov 17, 2009 HyperCloud(TM) is 16 GB, 2 virtual rank (vRank) DDR3 RDIMM memory module that allows 384 GB of DRAM to be populated in single dual-socket server. On server, 4 physical ranks are hidden from memory controller hub and presented as 2 vRanks. Server can be populated with twenty-four 16 GB 2 vRank RDIMMs. Using load reduction, servers with 4 DIMMs/channel can operate at transfer-rate of 1,333 MT/sec and provide maximum memory bandwidth.

Micron Technology Inc.
Boise, ID 83707 0006
Nov 13, 2009 Targeted at smart phones, personal music players, and, and mobile Internet devices, 4Gb NAND-2Gb LPDDR MCP is comprised of 34 nm, 4 Gb SLC NAND flash memory and 50 nm, 2 Gb LPDDR. Solution is suited for mainstream densities found in mobile devices, but flexibility is available to support higher densities - up to 8 Gb NAND and 8 Gb LPDDR - as mobile market integrates sophisticated multimedia functionality.

Cypress Semiconductor Corp.
San Jose, CA 95134
Oct 27, 2009 Offered in multiple configurations, 1 Mbit Serial non-volatile Static Random Access Memory (nvSRAM) series has SPI interface and operating frequencies up to 40 MHz. One member also integrates RTC. With access times as low as 20 ns, parallel nvSRAMs offer infinite read, write, and recall cycles and up to 20 years of data retention. These 4 and 8 Mbit nvSRAMs integrate programmable alarm function, watchdog timer, and RTC that enables time-stamping of critical data for back-up.

Cypress Semiconductor Corp.
San Jose, CA 95134
Oct 27, 2009 Leveraging 65 nm process technology, 144-Mbit CY7C16xxKV18 QDRII, QDRII+, DDRII, and DDRII+ memories use Phase Locked Loop and provide total data rate of 80 Gbps. QDRII+ and DDRII+ devices have On-Die Termination, which optimizes signal integrity and saves board space by eliminating external termination resistors. Available in 165 FBGA packages, memories are suited for Internet core and edge routers, fixed and modular Ethernet switches, medical imaging, and military signal processing systems.

Renesas Technology America, Inc.
San Jose, CA 95134-1368
Sep 18, 2009 Respectively capable of 533 and 333 MHz max operating speeds, QDRII+/DDRII+ and QDRII/DDRII SRAM support high-speed processing for packet look-up and packet buffer applications in high-end routers and switchers that support 10G, 40G, and beyond multi-layer communication systems. Both 72-Mbit Quad Data Rate II+ (QDR(TM) II+) and Double Data Rate II+ (DDRII+) SRAM products are manufactured with 45 nm fabrication process. Package is 165-pin plastic FBGA with 15 x 17 mm size.

Micron Technology Inc.
Boise, ID 83707 0006
Aug 18, 2009 Manufactured using 1.35 V, 2 Gb, 50 nm DDR3 memory chips, 16 GB DDR3 load-reduced, dual-inline memory module (LRDIMM) enables servers to support higher data frequencies while increasing memory capacity. It uses Inphi's isolation memory buffer chip in place of register, reducing bus load when transferring data between memory and processor. Typical server system that can accommodate up to 3 quad-rank 16 GB RDIMMS per processor can support up to 9 quad-rank 16 GB LRDIMMS per processor.

Ramtron International Corp.
Colorado Springs, CO 80921
Aug 06, 2009 Supplied in RoHS-compliant, 28-pin SOIC package, FM28V020 features NoDelay(TM) writes and unlimited read/write cycles. It operates from 2.0-3.6 V, accesses page mode operation up to 40 MHz, and may be used as drop-in replacement for battery-backed SRAM. Able to operate over -40 to +85°C range, this 256 Kb (32K x 8) nonvolatile ferroelectric random access memory (FRAM) retains data after power is removed and offers extended data retention of over 10+ years.

Ramtron International Corp.
Colorado Springs, CO 80921
Jul 23, 2009 Respectively featuring 2-wire (I²C) interface and serial peripheral interface (SPI), FM24V02 and FM25V02 operate from 2.0-3.6 V and come in RoHS-compliant, 8-pin SOIC package. Nonvolatile products offer NoDelay(TM) writes and read-only Device ID, which allows host to determine manufacturer, product density, and product revision. Power consumption rates for FM24V02, which supports up to 100-trillion read/write cycles, is 150 µA at 100 kHz, 90 µA in standby, and 5 µA in sleep mode.

Ramtron International Corp.
Colorado Springs, CO 80921
Jul 20, 2009 Housed in 48-pin FBGA package, 8 Mb Model FM23MLD16 is organized as 512 K x 16 nonvolatile memory, accessed within industry standard parallel interface. Access time is 60 ns and cycle time is 115 ns. Device reads and writes at bus speeds for NoDelay(TM) writes with endurance of 100 trillion writes and 10-year data retention. Operating from 2.7-3.6 V, surface-mount solution features high-speed page mode that enables 8-byte burst read/write operations at up to 33 MHz.

Ramtron International Corp.
Colorado Springs, CO 80921
Jul 07, 2009 Supporting legacy timing at 100 and 400 kHz, FM24CL32 features 32 Kb nonvolatile memory and 2.7-3.6 V operation in 8-pin SOIC package that uses two-wire (I²C) protocol. It provides data retention for up to 45 yr and operates over industrial temperature range of -40 to +85°C in low voltage, with active current of 70 µA (typical at 100 kHz) and 12 µA current in standby. Serial nonvolatile RAM is suited for data collection applications where frequent or rapid writes are required.

Ramtron International Corp.
Colorado Springs, CO 80921
Apr 16, 2009 Model FM24V05 512 Kb and FM24V10 1 Mb FRAM products are serial nonvolatile units in 8-pin SOIC packages that utilize I²C communication interface. They feature NoDelay(TM) writes, unlimited read/write cycles, and power consumption of 2.0-3.6 V with active current of less than 150 mA at 100 KHz, 90 mA in standby, and 5 mA during sleep mode. Operating in temperatures from -40 to +85°C, units support up to 3.4 MHz bus speed and provide data retention for over 10 yr.

Sanmina-Sci Corp.
San Jose, CA 95131
Mar 03, 2009 Providing non-volatile protection of RAID cache data during power failure, ArxCis-NV(TM) consists of JEDEC edge compatible registered DRAM module with ECC, paired with embedded SSD for data backup. If voltage drops below defined level, backup function is activated, and supercapacitors provide enough power for DRAM, NAND, and logic to transfer data into non-volatile flash. SATA bridge transfers data at rate of 80 MB/sec to SLC NAND, which retains data dump from DRAM for up to 10 yr.

Corsair Memory
Fremont, CA 94538
Feb 16, 2009 Designed to accommodate requirements of PC enthusiasts and high-end gamers, Dominator GT series comes in 3-6 Gb kits running at 2,000 MHz with latencies of 7-8-7. Dual-path Heat eXchange (DHX) technology includes single-piece heat-sink and removable cooling fins. Latter allows for multiple cooling options, including water and custom-designed thermoelectric cooling system to actively cool modules to as low as 20°C below ambient temperature for optimal overclockability.

Ramtron International Corp.
Colorado Springs, CO 80921
Feb 05, 2009 Featuring serial I²C memory interface, RoHS-compliant FM24L256 is 256 Kb nonvolatile ferroelectric random access memory (FRAM) device used for data collection that operates from 2.7-3.6 V. It reads and writes like RAM and provides data retention for 10 years. Write operations are performed at bus speed without delays and do not require internally elevated power supply voltage for write circuits. Next bus cycle can start immediately without need for data polling.

Microchip Technology, Inc.
Chandler, AZ 85224 6199
Feb 03, 2009 Featuring SPI interface and 20 MHz bus speed, 23 x 40 Models 23A640 and 23A256 have operating voltage range of 1.7-1.95 V, while 23 x 56 Models 23K640 and 23K256 feature operating range of 2.7-3.6 V. Available in 8-pin SOIC, PDIP, and TSSOP packages, units only use 4 MCU pins. All 8- and 32-KB devices are suited for applications involving bulk data transfers, DSP and other math algorithms, audio/video, speech encoding, VoIP, and Internet.

Ramtron International Corp.
Colorado Springs, CO 80921
Jan 23, 2009 Pin-compatible with asynchronous static RAM (SRAM), RoHS-compliant FM22LD16 is 4 Mb ferroelectric random access memory (FRAM) with access time of 55 ns and cycle time of 110 ns. Device reads and writes at bus speed for NoDelay(TM) writes, with endurance of at least 100 trillion writes and 10 year data retention. Resistant to moisture, shock, and vibration, 3 V SMT solution also offers high-speed page mode that enables 4-byte burst read/write operations at up to 40 MHz.

Strategic Test Corporation
Woburn, MA 01801-1915
Dec 02, 2008 Development Kit-5 supports both Linux 2.6 and Microsoft Embedded Windows CE 5.0 and 6.0. TX27 SODIMM module contains 400 MHz i.MX27 processor, 64 Mb mobile DDR-SDRAM, 128 Mb NAND Flash memory, 10/100 Ethernet MAC, USB 2.0 Host/OSG, LCD controller, and MPEG4 H.263/H.264 hardware CODEC for D1 video and camera interface. Other features included in kit are socket for TX27 SODIMM, UCB1400 CODEC, touchscreen controller, 2 SD card sockets, LCD 40-pin header, and 2 RS232 headers.

Ramtron International Corp.
Colorado Springs, CO 80921
Nov 24, 2008 Available in RoHS-compliant, 32-pin TSOP-I package, FM28V100 is 128K x 8 nonvolatile ferroelectric random access memory (F-RAM) that reads and writes as standard SRAM and retains data after power is removed. It operates from 2.0-3.6 V over -40 to +85°C range and features NoDelay(TM) writes, virtually unlimited read/write cycles, 24-bit device ID, and software-controlled write protection. Data is retained for 10+ years without need for battery.

Ramtron International Corp.
Colorado Springs, CO 80921
Nov 24, 2008 Housed in 8-pin SOIC package, Model FM25V05 consists of 2.0-3.6 V, SPI non-volatile RAM that features 1E14 read/write cycles and performs write operations at bus speeds without write delay. Data can be written continuously up to 40 Mbps. Operating over industrial temperature range of -40 to +85°C, device consumes 3 mA while running at 40 MHz SPI clock rate, 90 µA during standby, and 5 µA during sleep mode. Typical active power consumption is 38 µA per MHz.

Austin Semiconductor Europe, Ltd.
Austin, TX 78754
Oct 29, 2008 Housed in 54-pin package measuring 22.30 x 11.76 x 1.2 mm, 512 MB, 54-pin TSOPII SDRAM operates in temperatures from -55 to +125°C from single +3.3 ±0.3 V supply. Unit has 32 MB x 16 configuration and LVTTL-compatible inputs and outputs. Fully synchronous chip also features internal pipelined operation, allowing column address to be changed every clock cycle, and programmable burst lengths of 1, 2, 4, 8, or full page.