Ramtron International Corp.
Colorado Springs, CO 80921
Sep 16, 2008 Available in 8-pin SOIC package, FM25V10 1 Mb, 2-3.6 V SPI nonvolatile RAM consumes 3 mA while running at 40 MHz SPI clock rate, 90 µA during standby, and 5 µA during sleep mode. It features NoDelay(TM) writes, 1E14 read/write cycles, and active power consumption of 38 µA per MHz. Product performs write operations at bus speed without write delays, allowing data to be written immediately to memory array. Unit suits high frequency data collection and industrial controls applications.

Cypress Semiconductor Corp.
San Jose, CA 95134
Sep 12, 2008 Providing 20-year data retention and infinite read, write, and recall cycles, 2-Mbit CY14B102 and 8-Mbit CY14B108 target applications requiring continuous high-speed writing of data and absolute non-volatile data security. RoHS-compliant units replace SRAM, battery-backed SRAM, EPROM, and EEPROM devices, offering non-volatile data storage without batteries. Data transfers from SRAM to device's non-volatile elements take place automatically at power down. On power up, data is restored to SRAM.

Lexar Media Inc
Fremont, CA 94538
Aug 07, 2008 Crucial 1.5 V DDR2-667 MHz FBDIMM server memory modules utilize 1 GB-based components for reduced chip count. Suited for servers in data centers, modules' 1.5 V operating voltage and reduced chip count minimize power consumption and heat, contributing to energy-efficiency. They are available in 2, 4, and 8 GB kits.

Texas Instruments, Inc. (TI)
Dallas, TX 75243-4136
Jul 11, 2008 Intended for registered dual in-line memory modules (RDIMMs), SN74SSQE32882 phase locked loop (PLL) integrated DDR3 register enables system stability through constant clock and output delay over voltage and temperature variation. Supporting parity features, 28-56 bit registered buffer operates at 1.5 V VDD, supports data rates of 800-1,333 Mbps, and can support up to 72 DRAMs on one module. It features CKE power down, control mode register, and 300-670 MHz operating frequency.

Fujitsu Microelectronics Inc.
San Jose, CA 95134 1804
Jul 09, 2008 Suited for digital consumer electronics applications, MB81EDS256545 features DDR SDRAM interface and accommodates system-in-package (SiP) designs that have small mounting spaces on circuit boards. This 256 Mbit FCRAM runs on 1.7-1.95 V and is offered in a wafer format for SiP integration or wafer-level package. With 64-bit-wide I/O bus and operating frequencies to 216 MHz, product has max data transfer rate of 3.46 GBps.

Fujitsu Microelectronics Europe GmbH
Dreieich-Buchschlag D-63303  Germany
Jul 07, 2008 Suited for system-in-package (SiP) designs, MB81EDS256545 features 64-bit-wide I/O, operating frequencies to 216 MHz, and low-power DDR SDRAM interface that enables data transfer capabilities to 3.46 GB/sec. This 256 Mbit Consumer FCRAM(TM) (Fast Cycle Random Access Memory), suited for processing image/video data and other data types that demand high bandwidth, has 1.7-1.95 V supply voltage, 300 mA max operating current (burst read), and 20 µA max power down current.

Corsair Memory
Fremont, CA 94538
Jul 02, 2008 Available in 4 GB (2 x 2 GB modules) DIMM kits, Corsair Mac Memory kits provide fully-buffered 800 MHz solutions. Utilizing Mac Pro-specific heat sinks and performance ICs, memory modules help maintain high performance potential of Mac Pro desktop platforms.

austriamicrosystems AG
Premstatten   Austria
Jun 20, 2008 Suited for company's 0.35 µm process family, polyfuse-based OTP (one-time-programmable) memory cell PPROM facilitates trimming of analog and digital parameters without additional masks. Memory cells, offered in 2 fixed sizes of 4 x 8 bit and 16 x 8 bit, allow storage of analog and digital parameters and come with parallel interface. PPTRIM blocks are available in 8-, 16-, 32-, 48-, and 64-bit sizes and offer 3-wire interface and auto-load at power-on reset.

Corsair Memory
Fremont, CA 94538
Jun 05, 2008 Featuring IC overclocking capability and DHX cooling, 4 GB DOMINATOR DDR3 memory kit contributes to accelerated frame rates, loading times, and task switching in desktop platforms. DHX technology employs quad-layer heat sink design to optimize memory performance by maximizing thermal dissipation. Heat is removed via 2 paths: leads of BGA chips into PCB (conductive cooling), and back of BGA packages into custom-designed extruded aluminum heat sinks (convective cooling).

Ramtron International Corp.
Colorado Springs, CO 80921
May 22, 2008 Operating over Grade 3 automotive temperature range of -40 to +85°C, 64 Kb Model FM24CL64 combines NoDelay(TM) writes, virtually unlimited endurance of 1 trillion writes, 45 years of data retention, and I2C interface, enabling data collection/storage at max bus speed in intelligent infotainment applications. Available in green, 8-pin SOIC package, nonvolatile device operates at 3 V and draws 75 µA for reads and writes at 100 kHz.

Maxim Integrated Products
Sunnyvale, CA 94086
May 14, 2008 Composed of 10 independent gamma channels and one VCOM channel, DS3510 is integrated gamma/VCOM buffer with on-chip EEPROM that supports 4 gamma curves and rapid switching among curves. Each channel includes 4 bytes of EEPROM, 2 latches, one 8-bit DAC, and one buffer amplifier. Features enable pin-controllable, gamma/VCOM table switching in less than 300 ns. Each table implements different gamma curve, which lets TFT-LCD designers compensate for range of conditions.

Ramtron International Corp.
Colorado Springs, CO 80921
Apr 18, 2008 Supplied in RoHS-compliant 44-pin QFP, FM6124 provides single-chip solution for digital event monitoring. It continuously monitors state changes, stores them in ferroelectric random access memory (F-RAM), and alerts system to changes. Designed for use in industrial control, medical, and metering markets, solution stores up to 4,000 event records and incorporates real-time clock with calendar, 12 individually configurable digital inputs, and 100 kbps I²C interface.

Kingston Technology Co., Inc.
Fountain Valley, CA 92708
Apr 16, 2008 Designed and validated for Apple Mac Pro workstations and Xserve server systems, 800 MHz DDR2 fully-buffered dual-inline memory kits are offered in 2, 4, and 8 GB capacities. They deliver up to 25.6 GB/sec bandwidth with 4 memory channels active and match bandwidth needs of Quad-Core Xeon processors. Enabling flexible upgrade path, 2 and 4 GB versions allow for future RAM expansion.

Ramtron International Corp.
Colorado Springs, CO 80921
Apr 14, 2008 Housed in 8-lead TDFN package, 2 Mb Model FM25H20 is organized as 256 K x 8-bit nonvolatile memory that reads and writes at bus speed up to 40 MHz, with essentially unlimited endurance and 10-year data retention. Hardware and software write protection feature prevents inadvertent writes and data corruption. Operating from 2.7-3.6 V over industrial temperature range of -40 to +85°C, device draws less than 10 mA for reads/writes at 40 MHz, 80 µA in standby, and 3 µA in sleep mode.

VMETRO, Inc
Houston, TX 77077
Apr 09, 2008 With support for Serial RapidIO® or PCI Express®, Model MM-6171 is rugged COTS buffer memory node providing 2-4 GB of high speed buffer memory. Unit includes DMA engine and Serial RapidIO x4 interface that runs at 3.125 GHz with corner-turning, while x8 bus interface runs at 2.5 GHz for PCI Express. It is suited for embedded applications such as radar signal processing, signal intelligence, and image acquisition that require buffering capability with FPGA memory controller.

Kingston Technology Co., Inc.
Fountain Valley, CA 92708
Mar 26, 2008 Able to accommodate multiple platforms, 800 MHz DDR2 fully buffered dual-inline memory modules (FB-DIMMs) come in capacities from 512 MB to 4 GB and are designed for systems using Intel's Seaburg S5400 chipset. Products deliver up to 25.6 GB/s bandwidth with 4 memory channels active and match bandwidth needs of XEON processors. Architecture of 2 and 4 GHz FB-DIMMs enables flexible upgrade path while leaving room for future RAM expansion.

Corsair Memory
Fremont, CA 94538
Mar 21, 2008 Specifically tuned for MacBook and MacBook Pro laptop computers, low-latency memory modules (VSA4GSDSKIT667C4) promote overall system performance improvement. SODIMM memory modules feature Serial Presence Detect (SPD) profile characteristics so that Macs can self-configure for optimal performance for critical applications.

Ramtron International Corp.
Colorado Springs, CO 80921
Mar 12, 2008 Combining 64 Kb of FRAM memory with real-time clock/calendar (RTC), Model FM3135 is designed for use in meters, elapsed time monitors, time-of-use recording, and other data-storage applications that require time-stamping. RTC incorporates programmable frequency clock output and alarm which compares user-programmed alarm values to corresponding RTC time/date values. Available in 20-pin SOIC package, unit operates from 2.7-3.6 V over entire industrial temperature range of -40 to +85°C.

Silicon Storage Technology Inc.
Sunnyvale, CA 94086
Feb 11, 2008 Measuring 6 x 8 x 1 mm, 34WA Series of 1.8 V ComboMemory Devices support burst-mode operation, which allows data to be read at high-speed. Units also support address and data bus multiplexing to allow sharing of I/O pins. Four models are available with 16 Mb flash, 32 Mb flash, 32 Mb flash and 8 Mb PSRAM, and 32 Mb flash and 16 Mb PSRAM.

Ramtron International Corp.
Colorado Springs, CO 80921
Jan 23, 2008 Operating from 4.0-5.5 V and 2.7-3.6 V, respectively, FM3127x/L27x Processor Companion ICs feature trickle charger capable of charging 1 Farad supercapacitor in under 3 hr and real-time clock that requires 12.5 pF external watch crystal. Single-chip solutions are available with 4, 16, 64, or 256 Kb nonvolatile FRAM memory, 2-wire interface, as well as integrated support and peripheral functions for processor-based systems. Programmable low-VDD reset and watchdog timer are also included.