Satellite Amplifiers

Electronic Components & Devices, Communication Systems & Equipment

Ultra Low Noise MMIC Amplifier has 17-27 GHz bandwidth.

January 26, 2015

Supplied in die form, CMD163 features gain of +24 dB, noise figure of <1.3 dB, and output 1 dB compression point of +19 dBm across 17–27 GHz bandwidth. All-positive bias scheme eliminates need for negative voltages and sequencing circuitry, and bias conditions are Vdd = 4 V @ 120 mA and Vgg = 3.0 V. LNA is internally matched 50 Ω design that does not require any external components aside from bypass capacitors. Areas of use include military and space applications and communication systems. Read More

Communication Systems & Equipment, Electronic Components & Devices

High Linearity 4 W Power Amplifier suits Ka-band applications.

January 20, 2015

Offered in bare die format and 5 x 5 mm, 32-lead QFN package, MAAP-011139 has 29–31 GHz frequency range and delivers 24 dB of linear gain, 4 W of saturated output power, and 23% efficiency. This high-linearity power amplifier, suited for Ka-band, high-data density satellite communications, provides >27 dBm Pout/tone while maintaining IM3 levels of 30 dBc. Rating for input and output return loss is 10 dB. Read More

Communication Systems & Equipment, Electronic Components & Devices

GaN Low-Noise Amplifier features 23 dB gain.

December 24, 2014

Able to survive input power levels up to 5 W without front-end limiter, 4–8 GHz Model CMD219 features output of 1 dB, compression point of +18 dBm, and noise figure of 1.1 dB across operating bandwidth. Typical bias conditions are Vdd = 10 V at 100 mA and Vgg = -2.3 V, although Vdd can vary from 5–28 V. Suitable applications include point-to-point and point-to-multipoint radios, military and space, and test instrumentation. Read More

Communication Systems & Equipment, Electronic Components & Devices

Low-Noise GaN LNA features high power survivability.

December 15, 2014

Supplied in die form, CMD218 offers gain of 22 dB, output of 1 dB, compression point of +19.5 dBm, and noise figure of <1.25 dB across 5–9 GHz frequency range. Unit can, without input limiter, survive incident power levels up to 5 W without any degradation in performance. With 50 Ω matched design that eliminates need for external DC blocks and RF port matching, LNA operates from 5–28 V supply and draws 100 mA typ quiescent current. Negative gate voltage is required for proper operation. Read More

Communication Systems & Equipment, Electronic Components & Devices, Optics & Photonics

Transimpedance Amplifier targets optical networking systems.

September 29, 2014

Intended for 100G optical networking market, 4-channel ONET2804T provides less than 2 µA input-referred noise and virtually no cross talk between channels. Internal circuit provides photodiode reverse bias voltage and senses average photocurrent supplied to each photodiode. Available in 750 µm channel-pitch bare die, TIA serves parallel optical interconnects in applications with data rates up to 28 Gbps, such as optical line cards, point-to-point microwave backhauls, and video over fiber. Read More

Communication Systems & Equipment, Electronic Components & Devices

Klystron Modulator provides pulse fidelity and repeatability.

August 26, 2014

Featuring >0.1% pulse fidelity and repeatability, with 100,000 hr MTBF, DTI PowerMod™ Solid-State Klystron Transmitter is suited for particle accelerators and mission-critical radars. Unit includes PLC-based controller, pulse transformer, high voltage solid-state switch, and required protection circuitry to run Klystron. With peak RF power to 100 mW, amplifier offers pulse widths from 1 µs to 5 mS, repetition rate to 1 KHz, voltage flatness of <1%, and 0.1% reproducibility. Read More

Communication Systems & Equipment, Electronic Components & Devices

Low Noise Amplifier offers wideband performance.

July 22, 2014

Operating from DC-50 GHz, Model CMD206 offers noise figure of less than 3.5 dB, gain of greater than 11 dB, and output 1 dB compression point of +12 dBm at 30 GHz. Distributed LNA requires all-positive bias of only 4 V at 32 mA (drain), 3 V (gate). External drain bias network and input blocking capacitor are required for proper operation. Offering full passivation, die is suited for microwave radio and VSAT, telecom infrastructure, test instrumentation, and fiber optic applications. Read More

Communication Systems & Equipment, Electronic Components & Devices

Ultra-Low-Noise Amplifiers suit E- and W-band applications.

June 6, 2014

Measuring 1.7 mm², Model ALP283 operates from 80–100 GHz, while Model ALP275, measuring 2.125 mm², operates from 71–96 GHz. ALP283 provides 29 dB of linear gain, 2.5 dB typical noise figure, and P1dB of 3 dBm (2 mw). Delivering greater than 26 dB of linear gain, ALP275 features 3 dB typical noise figure and P1dB of 4 dBm (2.5 mw). InP HEMT MMIC LNAs are suited for W- and E-band commercial, civil, and military applications such as communication links, sensors, and millimeter-wave imaging. Read More