PowerPAK 20 V MOSFET enhances reliability of portable electronics.
Press Release Summary:
Supplied in 2 x 2 mm footprint PowerPAK® SC-70 package, SiA466EDJ increases power density and reliability for portable electronics. This 20 V n-channel TrenchFET® power MOSFET, with VGS rating of ±20 V, offers 25 A continuous drain current and 2,500 V ESD protection. On-resistance of 9.5 mΩ (10 V), 11.1 mΩ (6 V), and 13.0 mΩ (4.5 V) reduces conduction losses, and 6.3 nC typical gate charge and 0.9 Ω gate resistance minimize switching losses.
Original Press Release:
Vishay Intertechnology 20 V MOSFET in PowerPAK® SC-70 Brings Power Density and Reliability to Portable Electronics
Device Offers 25 A Continuous Drain Current and 2500 V ESD Protection in 2 mm by 2 mm Footprint
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today released a new 20 V n-channel TrenchFET® power MOSFET in the ultra-compact thermally enhanced PowerPAK® SC-70 package. Providing increased power density and reliability for portable electronics, the Vishay Siliconix SiA466EDJ offers the industry's highest package-limited continuous drain current for a 20 V MOSFET in the 2 mm by 2 mm footprint area, and it is the only such device with a VGS rating of ± 20 V to provide integrated ESD protection.
The SiA466EDJ's 25 A package-limited continuous drain current is 13 % higher than the closest competing device. In load switch applications, the high current rating provides an additional safety margin for large in-rush currents and fault conditions including short circuits. The MOSFET's 2500 V integrated ESD protection prevents static damage from handling or human body contact.
The device released today is a versatile solution for power management in portable equipment designs. The combination of a high current rating and excellent on-resistance times gate charge figure of merit (FOM) optimizes synchronous buck converters and load switches in wireless and fast battery chargers, smartphones, tablets, notebook computers, and e-locks.
To increase efficiency in high-frequency switching applications, the SiA466EDJ's low on-resistance of 9.5 mΩ (10 V), 11.1 mΩ (6 V), and 13.0 mΩ (4.5 V) reduces conduction losses, while its low 6.3 nC typical gate charge and 0.9 Ω gate resistance minimize switching losses. The MOSFET is 100 % RG-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiA466EDJ are available now, with lead times of 13 weeks for large orders. Pricing for U.S. delivery only starts at $0.32 per piece.
Resources:
Product datasheet on the Vishay website
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Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
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