Power MOSFET (80 V) features low on-resistance.
Press Release Summary:
Built on technology optimized for higher-voltage devices, ThunderFET® SiR880DP is 80 V power MOSFET with on-resistance specified at 4.5 V gate drive. Design enables lower gate drive losses in POL applications while allowing use of 5 V PWM ICs. Supplied in thermally enhanced PowerPAK® SO-8 package, product offers on-resistances of 8.5 mW at 4.5 V, 6.7 mW at 7.5 V, and 5.9 mW at 10 V. Typical on-resistance times gate charge is 161 at 4.5V.
Original Press Release:
Vishay's SiR880DP ThunderFET® Power MOSFET Named as Top-10 DC/DC Power Product by Electronic Products China Magazine
Device is Industry's First 80V MOSFET with On-Resistance Specified at 4.5V Gate Drive, With Value of 8.5 mW MALVERN, PENNSYLVANIA - Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its SiR880DP 80-V ThunderFET® power MOSFET was chosen as a winner in Electronic Products China magazine's Eighth Annual Top-10 DC/DC Power Product Awards. The editors of Electronic Products China evaluated hundreds of products launched in the previous year on the basis of innovative design, significant advancement in technology or application, and substantial achievement in price and performance. Vishay's SiR880DP power MOSFET was selected because of its innovation and demonstrated success in dc-to-dc applications. The Electronic Products China Top-10 DC/DC Power Product Awards were announced in the October 2010 issue of the magazine with a brief description of each product. The awards ceremony was held on September 17 at The Presidential Hotel Beijing, China. Alice Wei, Sales Account Manager at Vishay's Beijing office, accepted the award on behalf of Vishay. The complete list of winners is available at the following web address: www.21ic.com/wz/CRXDQWHFA/20100903/20100903.htm. Built on a new low-on-resistance technology optimized for higher-voltage devices, Vishay's ThunderFET SiR880DP is the first 80V power MOSFET with an on-resistance rating at a 4.5V gate drive, enabling significantly lower gate drive losses in POL applications while allowing lower-voltage/lower-cost 5-V PWM ICs to be utilized. Previously, 80V power MOSFETs were only available with on-resistance ratings at a 6V gate drive or higher. Packaged in the thermally enhanced PowerPAK® SO-8, the SiR880DP offers ultra-low on-resistances of 8.5mW at 4.5V, 6.7mW at 7.5V, and 5.9mW at 10V. Typical on-resistance times gate charge is 161 at 4.5V. Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com. ThunderFET and PowerPAK are registered trademarks of Siliconix incorporated.
