Product News: Electronic Components & Devices
P-Channel Power MOSFET offers low RDS(ON) values.
Press Release Summary:
May 1, 2014 -
Supplied in 2 x 2 mm PowerPAK® SC-70 package, SiA453EDJ p-channel TrenchFET® power MOSFET conserves space and increases power efficiency in portable electronics. RoHS-compliant and halogen-free product, 100% Rg and UIS tested, offers on-resistance of 18.5 mΩ (-10 V), 23.5 mΩ (-4.5 V), 26.0 mΩ (-3.7 V), and 37.7 mΩ (-2.5 V) as well as 4,000 V built-in ESD protection. While -30 V VDS provides headroom needed for over-voltage spikes, 12 V VGS enables on-resistance ratings of -3.7 and -2.5 V.
Original Press Release
Vishay Intertechnology's - 30 V, 12 V VGS P-Channel MOSFET Offers Industry's Lowest RDS(ON) in Its Class, Ratings Down to 2.5 V
Press release date: April 30, 2014
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new - 30 V, 12 V VGS p-channel TrenchFET® power MOSFET in the ultracompact, thermally enhanced PowerPAK® SC-70 package. With the industry's lowest on-resistance at - 4.5 V and - 2.5 V gate drives for a - 30 V device in the 2 mm by 2 mm footprint area, the SiA453EDJ is designed to save space and increase power efficiency in portable electronics.
The - 30 V VDS of the Vishay Siliconix device released today provides the headroom needed for over-voltage spikes, while its 12 V VGS enables lower on-resistance ratings of - 3.7 V and - 2.5 V for ultraportable, battery-operated applications. The MOSFET is optimized for load and input over-voltage protection switches, battery chargers, and DC/DC converters in smartphones, tablet PCs, mobile computing devices, nonimplantable portable healthcare products, hard disk drives, and handheld consumer electronics including electric toothbrushes, shavers, scanners, and RFID readers. For these applications, the SiA453EDJ offers extremely low on-resistance of 18.5 mΩ (- 10 V), 23.5 mΩ (- 4.5 V), 26.0 mΩ (- 3.7 V), and 37.7 mΩ (- 2.5 V), and provides built-in ESD protection of 4000 V.
The SiA453EDJ's on-resistance at - 4.5 V is 36 % lower than the closest competing - 30 V device, and 50 % lower than the closest competing device with a 12 V VGS. The MOSFET's on-resistance at - 2.5 V is 46 % lower than the next-best 12 V VGS device. These industry-low values allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times, while the device's compact PowerPAK SC-70 package saves critical PCB space.
The MOSFET is 100 % Rg and UIS tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU.
Samples and production quantities of the SiA453EDJ are available now, with lead times of 13 weeks for larger orders. Pricing for U.S. delivery only starts at $0.14 per piece in 100,000-piece quantities.
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Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.