N-Channel Power MOSFETs come in 5 x 6 mm package.
Press Release Summary:
Housed in surface-mount PowerPAK® SO-8L package, 600 V Model SiHJ8N60E and 650 V Models SiHJ6N65E and SiHJ7N65E offer space-saving alternatives to MOSFETs in TO-252 package for lighting, industrial, telecom, computing, and consumer applications. Devices feature max on-resistance down to 0.52 Ω at 10 V and ultra-low gate charge down to 17 nC. Compared to leadless DFN packages, gullwing lead construction offers board-level reliability when subjected to temperature cycling over life of equipment.
Original Press Release:
New Vishay Intertechnology 600 V and 650 V E Series MOSFETs in PowerPAK® SO-8L Increase Reliability and Reduce Package Inductance
MOSFETs Provide Space-Saving Alternative to Devices in TO-252 (DPAK) Package for Lighting, Computing, and Consumer Applications
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that it has extended its offering of 600 V and 650 V E Series power MOSFETs with three new n-channel devices in the compact PowerPAK® SO-8L package. Providing space-saving alternatives to MOSFETs in the TO-252 (DPAK) package, the Vishay Siliconix 600 V SiHJ8N60E and 650 V SiHJ6N65E and SiHJ7N65E increase reliability and provide reduced package inductance for lighting, industrial, telecom, computing, and consumer applications.
Designed and developed by Vishay Siliconix, the surface-mount PowerPAK SO-8L package of the MOSFETs released today is fully RoHS-compliant, halogen-free, and lead (Pb)-free. Measuring only 5 mm by 6 mm, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E occupy only half the board space, with half the height, of devices in the TO-252 (DPAK) package. Also, compared to MOSFETs in leadless DFN packages, the gullwing lead construction of the PowerPAK SO-8L can offer improved board-level reliability when subjected to temperature cycling over the lifetime of the equipment.
Built on Vishay's latest energy-efficient E Series superjunction technology, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E feature low maximum on-resistance down to 0.52Â Ω at 10 V, ultra-low gate charge down to 17 nC, and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. These values translate into extremely low conduction and switching losses to save energy in power factor correction, flyback and two-switch forward converters, and hard-switched topologies for HID and LED lighting, and industrial, telecom, consumer, and computing power adapters.
The MOSFETs are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing.
Device Specification Table:
Part number | VDS (V) | VGS (V) | ID (A) @ +25 °C | RDS(ON) (Ω) @ 10 V (max.) | Qg (nC) @ 10 V (typ.) |
SiHJ8N60E | 600 | ± 30 | 8.0 | 0.520 | 22 |
SiHJ6N65E | 650 | ± 30 | 5.6 | 0.868 | 16 |
SiHJ7N65E | 650 | ± 30 | 7.9 | 0.598 | 22 |
Samples and production quantities of the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E MOSFETs are available now, with lead times of 16 weeks. Pricing for U.S. delivery only starts at $0.66 per piece in 10,000-piece quantities.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
Link to Datasheet:
http://www.vishay.com/ppg?91563 Â (SiHJ8N60E)
http://www.vishay.com/ppg?91589 Â (SiHJ6N65E)
http://www.vishay.com/ppg?91823Â (SiHJ7N65E)
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