N-Channel 40/60 V MOSFETs reduce losses to increase efficiency.
Press Release Summary:
Breakdown voltage is 40 V for NTMFS5C404NLT, NTMFS5C410NLT, and NTMFS5C442NLT, which respectively have max RDS(on) values of 0.74, 0.9, and 2.8 mΩ and continuous drain current ratings of 352, 315, and 127 A. Breakdown voltage rating is 60 V for NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL, which feature respective max RDS(on) values of 1.2, 1.5, and 4.7 mΩ and continuous drain currents of 287, 235, and 93 A. Gate capacitance, down to 2,164 pF, minimizes driver losses for all devices.
Original Press Release:
ON Semiconductor Introduces a Comprehensive Array of New Medium Voltage N-Channel MOSFETs
Optimized for reducing switching, conduction & driver power losses to boost efficiency
PCIM - Nuremberg, Germany. – ON Semiconductor (Nasdaq: ON), driving energy efficiency innovations, has further expanded its broad portfolio of power MOSFETs with new, high efficiency single n-channel devices targeted at data networking, telecommunications and industrial applications.
These devices are capable of delivering incredibly low on state resistance, RDS(on), values, thereby minimizing conduction losses and improving overall operational efficiency levels. They also have very low gate capacitance (Ciss) - down to 2164 picofarads (pF) - which ensures driver losses are kept as low as possible.
With a rated breakdown voltage of 40 volts (V), the company’s new NTMFS5C404NLT, NTMFS5C410NLT and NTMFS5C442NLT MOSFETs have maximum RDS(on) values (@ Vgs = 10 V) of 0.74 milliohms (mΩ), 0.9 mΩ and 2.8 mΩ respectively, with continuous drain currents of 352 amps (A), 315 A and 127 A respectively. These are complemented by the NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL, all of which have breakdown voltage ratings of 60 V. The maximum RDS(on) of these devices is 1.2 mΩ, 1.5 mΩ and 4.7 mΩ respectively, while their associated continuous drain currents are 287 A, 235 A and 93 A. Both the 40 V and 60 V devices are rated to operate at junction temperatures up to 175 °C, thereby giving engineers greater thermal headroom for their designs. ON Semiconductor will be expanding this offering with devices which feature additional RDS(on) values and different packages, such as micro8FL, DPAK and TO220.
“Engineering teams at OEMs are constantly striving to create power system designs that are capable of attaining higher degrees of efficiency while simultaneously taking up less board space,” said Paul Leonard, vice president and general manager for ON Semiconductor’s Power Discrete Products. “With these new additions to our extensive power MOSFET offering, we are providing customers with high performance devices, in compact thermally efficient packages, that will help them to achieve this goal.”
Packaging and Pricing
The NTMFS5C404NL, NTMFS5C410NL, NTMFS5C442NL NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL are all offered in compact, RoHS-complaint SO8FL (DFN-8) packages with pricing starting at $0.42 per unit in 10,000 unit quantities.
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About ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power and signal management, logic, standard and custom devices. The company’s products help engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical and military/aerospace applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit http://www.onsemi.com.
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Contacts
Sarah Rockey
Media Relations
ON Semiconductor
(602) 244-5910
Sarah.Rockey@onsemi.com
Parag Agarwal
Vice President Investor Relations
ON Semiconductor
(602) 244-3437
Parag.Agarwal@onsemi.com
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