MOSFET extends battery usage in ultraportable applications.
Press Release Summary:
Offered in chipscale MICRO FOOT® package with 1 mm² footprint, Si8410DB TrenchFET® 20 V n-channel MOSFET is optimized for use as load switch, small-signal switch, and high-speed switch in power management applications. Device features low on-resistance of 37 mΩ at 4.5 V, 41 mΩ at 2.5 V, 47 mΩ at 1.8 V, and 68 mΩ at 1.5 V. With ratings down to 1.5 V and ±8 V VGS, MOSFET extends battery usage in wearable devices, smartphones, tablets, and solid-state drives.
Original Press Release:
New Vishay Intertechnology 20 V Chipscale MOSFET Saves Space, Extends Battery Usage in Ultraportable Applications
MICRO FOOT® Device Features Industry's Lowest On-Resistance for a 20 V MOSFET in the 1 mm Square Footprint
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new TrenchFET® 20 V n-channel MOSFET designed to save space, decrease power consumption, and extend battery usage in wearable devices, smartphones, tablets, and solid-state drives. Offered in a chipscale MICRO FOOT® package with an ultra-low 0.54 mm maximum height, the Vishay Siliconix Si8410DB provides the industry's lowest on-resistance for any 20 V device in the compact 1 mm square footprint.
Optimized for use as a load switch, small-signal switch, and high-speed switch in power management applications, the Si8410DB features extremely low on-resistance of 37 mΩ at 4.5 V, 41 mΩ at 2.5 V, 47 mΩ at 1.8 V, and 68 mΩ at 1.5 V. Compared with the closest competing devices in the CSP 1 mm square package, these ratings represent an improvement of 26 % at 4.5 V, 32 % at 2.5 V, 35 % at 1.8 V, and 27 % at 1.5 V. Compared with devices in the DFN 1 mm square package, on-resistance is 32 % lower at 4.5 V, 40 % lower at 2.5 V, 48 % lower at 1.8 V, and 43 % lower at 1.5 V. The device's low on-resistance, ratings down to 1.5 V, and ± 8 V VGS provide a combination of safety margin, gate drive design flexibility, and high performance for lithium ion battery-powered applications.
The Si8410DB offers an extremely low on-resistance per area of 30 mΩ-mm square — 28 % lower than the closest competing 20 V MOSFET in a 1 mm square plastic package — to save space and reduce battery power consumption in mobile applications. The device's low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat. The combination of lower on-resistance and lower thermal resistance results in up to 45 % and 144 % lower temperature rise than the next-best devices in CSP and 1 mm square packages, respectively.
Samples and production quantities of the Si8410DB are available now, with lead times of 13 weeks for larger orders. Pricing for U.S. delivery only is $0.22 per piece in 100,000-piece quantities.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
MICRO FOOT and TrenchFET are registered trademarks of Siliconix incorporated.
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