Product News: Electronic Components & Devices
MOSFET comes in 4-lead, energy-saving package.
Press Release Summary:
May 15, 2013 - Supplied in TO247-4 four-lead package, MDmesh™ V Super-Junction MOSFET STW57N65M5-4 will enable increased energy efficiency in active PFC circuits and full-bridge or half-bridge power converters for consumer and industrial electronic products. Product provides direct source connection used only for switching control; extra lead increases switching efficiency, reduces energy losses, and allows higher-frequency operation for more compact power supplies.
Original Press Release
STMicroelectronics Extends High-Efficiency Power Family Using New Energy-Saving Package
Press release date: May 6, 2013
Geneva – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has introduced the first MDmesh™ V Super-Junction MOSFET featuring a new package technology that increases the efficiency of power circuitry in equipment such as white goods, televisions, PCs, telecom, and server switched-mode power supplies.
The new TO247-4 4-lead package provides a direct source connection used only for switching control, whereas conventional packages provide one connection for both switching and power. The extra lead increases switching efficiency, which reduces energy losses and allows higher-frequency operation for more compact power supplies.
ST co-developed the package with Infineon, which is also introducing its own new Super-Junction devices, providing second-source flexibility for users. “The TO247-4 is highly cost-effective and requires only minimal modification of the PCB layout when replacing a standard TO-247 device, which simplifies adoption in power systems,” commented Maurizio Giudice, Marketing Director, Power Transistor Division, STMicroelectronics. “Our new MDmesh devices using this package will enable better environmental performance of end equipment by improving energy efficiency in active modes.”
The TO247-4 package features an innovative internal construction implementing a Kelvin connection to the source. This connection bypasses the common source inductance of the main power connection, enabling up to 60% of switching losses to be eliminated and allowing designers to use higher switching frequencies that require smaller filtering components. Combining this new package with ST’s MDmesh Super-Junction technology, which achieves one of the highest conduction efficiencies per silicon area, delivers the best possible overall energy savings.
The device introduced today is the STW57N65M5-4. As the first MDmesh device released in the TO247-4, it will enable increased energy efficiency in active Power-Factor Correction (PFC) circuits and full-bridge or half-bridge power converters for a wide variety of consumer and industrial electronic products.
Additional features of STW57N65M5-4 in TO247-4:
• High noise immunity, lowering susceptibility to Electro-Magnetic Interference (EMI)
• Increased voltage rating for greater safety margins
• High dv/dt capability for enhanced reliability
• 100% avalanche tested, enabling use in rugged designs
The STW57N65M5-4 is in mass production now, priced from $10.00 for orders over 1,000 pieces.
For further information please refer to http://www.st.com/to247-4-pr
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