Product News: Electronic Components & Devices
Hybrid IGBT Modules feature multiple circuit topologies.
Press Release Summary:
October 11, 2011 - Combining NFH-Series Powerex IGBT with Zero Recovery® Schottky diode, split dual Si/SiC hybrid IGBT modules QID1210005 and QID1210006 are designed for hard switching applications upwards of 30 kHz and soft switching applications from 60-80 kHz. Individual modules feature 2 IGBT transistors, each having reverse-connected Zero Recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from heat sinking copper or AlSiC baseplate.
Original Press Release
Low Profile Split Dual Si/SiC Hybrid IGBT Modules Featuring Multiple Circuit Topologies Available from Powerex
Press release date: September 1, 2011
Each module consists of two IGBT transistors, with each transistor having a reverse-connected Zero Recovery free-wheel silicon carbide Schottky diode. A 30% decrease in switching losses result from this innovative design. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
QID1210005 and QID1210006 boast a very low profile and can be easily reconfigured. In total, five different configurations are possible: independent; as a dual; in parallel; common collector; and common emitter.
Product Ratings and Characteristics -Rated at 100A/1200V, the QID1210005 and QID1210006 feature:
Applications -These hybrid modules can be used in applications, including:
Standard Powerex NFH gate drivers can be used with the split dual Si/SiC Hybrid IGBT modules.
Availability - QID1210005 can be purchased at sample pricing at $460 each. QID1210006 can be purchased at sample pricing at $573 each.
For more information, contact Kelly Bandieramonte (firstname.lastname@example.org).
*Zero Recovery is a registered trademark of Cree, Inc.