GFET3 Power Switches feature on/off control.

Press Release Summary:

Available in SLG59M1730C, SLG59M1736C and SLG59M1735C models, GFET3 Power Switches are operated with 2.5 V to 5.5 V supply voltage. Used for smartphone and fitness band applications, SLG59M1730C and SLG59M1736C come in with 0.8 mm x 0.8 mm dimensions with 16.5 mA inrush current. Featuring undervoltage detection and two-level current-limit protection, SLG59M1735C is suitable for higher-power tablet pc applications.


Original Press Release:

Silego Announces GFET3 Integrated Power Switches in Wafer Level Chip Scale Packaging

Unlike other load switch products on the market in Wafer Level Chip Scale Package (WLCSP), Silego combines its world-class FET IP and system-level protection features in announcing three new, low-RDSON feature-rich Integrated Power Switches.

Silego Technology announced today an extension of its performance-driven GFET3 Integrated Power Switch (IPS) portfolio. Addressing extremely PCB-space-constrained, high-performance applications in tablet PC, smartphones and fitness band markets, these three new WLCSP products cover high-side power control applications from 1 A to 4 A.

For smartphone and fitness band applications, the 0.64 mm2 (0.8 mm x 0.8 mm) SLG59M1730C (33 mΩ/1 A) and the SLG59M1736C (33 mΩ/2.2 A) are low-leakage, self-powered pFET IPSs that can operate from 2.5 V to 5.5 V supply voltages and draw very little supply current. Both products offer low-threshold ON/OFF control, fast output voltage discharge, and a novel, controlled input current profile on startup. Since small form-factor Li-ion batteries exhibit very low amp-hour capacities, the SLG59M1730C/SLG59M1736C's controlled 16.5 mA inrush current profile on startup prevents Li-ion battery voltage sag when Bluetooth radios or other high current-demand operations are enabled. When compared to other 4-ball WLCSPs in the market with fast, fixed output voltage rise times, the magnitude of the inrush current - directly proportional to the load capacitor value - can be quite large. If the resultant inrush current is large enough to cause the Li-ion battery voltage to sag, an inadvertent system reset can result. Thus, the SLG59M1730C/SLG59M1736C's controlled inrush current attribute prevents unintended system resets from occurring.

For higher-power tablet pc applications, the SLG59M1735C is a 10.5 mΩ/4 A nFET IPS with a full suite of protection features. Powered from 2.5 V to 5.5 V supplies, the input voltage range extends down to 0.9 V to accommodate 1.0 V high-current rails found in FPGA, ASIC, and processor power sequencing applications. The SLG59M1735C feature set includes: ON/OFF control, soft-start control, undervoltage detection, and two-level current-limit protection. When compared to other packaged products in Silego's GFET3 portfolio with similar features, the 1.5 mm2 SLG59M1735C is a 50% smaller footprint. When compared to other 4 A WLCSP/DFN products in the market with similar protection features, the SLG59M1735C is a 14% to 32% smaller footprint.

Please contact Silego at: info@silego.com or visit Silego's website: http://www.silego.com for pricing, samples, datasheets about GFET3 and HFET1 product portfolios.

SOURCE Silego Technology

CONTACT:

Victoria Yatskulyak,

408-327-8800,

vitay@silego.com

Web Site: http://www.silego.com

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