GaN Power Semiconductors simplify PCB design with topside cooling.
Press Release Summary:
With current ratings from 8–250 A, gallium nitride (GaN) power transistors feature GaNPX™ packaging and are based on Island Technology®. Die consist of islands and is embedded within laminate construction. Series of galvanic processes replace conventional techniques, such as clips, wire bonds, and molding compounds. While packaged to be cooled via topside of chip using heat sink or fan, products can also be cooled from bottom surface of die through conduction to PCB.
Original Press Release:
GaN Systems' Gallium Nitride Power Semiconductors Now with Topside Cooling for Simpler PCB Design
GaNPX™ packaging enables use of conventional heat dissipation techniques
OTTAWA, Ontario – GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, today announces new topside cooling technology in its wide range of high-power enhancement-mode devices. Topside cooling enables engineers to use conventional, well-understood PCB cooling techniques when incorporating GaN Systems’ market-leading semiconductors into their latest designs for products such as inverters, UPS, hybrid electric vehicles/electric vehicles, high voltage DC-DC conversion and consumer products such as TVs.
GaN Systems’ gallium nitride power transistors are based on its proprietary Island Technology® - the die consist of islands rather than traditional fingers, which brings significant advantages in terms of better current handling, lower inductance, scaling, isolation and thermal management, as well as enabling smaller die and lowering cost. GaN Systems’ enhancement-mode devices with current ratings ranging from 8A to 250A are delivered in its proprietary GaNPX™ packaging: the die is embedded within a laminate construction and a series of galvanic processes replace conventional techniques such as clips, wire bonds and moulding compounds. These near-chipscale high power switching transistors are now packaged to be cooled via the topside of the chip using a heat sink or fan – conventional techniques that are well-understood and familiar to design engineers who may be unfamiliar with using GaN devices or using them for the first time.
GaN transistors can also be cooled from the bottom surface of the die through conduction to the PCB.
GaN Systems is the first company to have developed and brought a comprehensive product range of devices with current ratings from 8A to 250A to the global market – its Island Technology® die design, combined with its extremely low inductance and thermally efficient GaNPX™ packaging and Drive Assist technology means the company’s GaN transistors offer a 40-fold improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Devices are available now through its worldwide distribution network.
About GaN Systems
GaN Systems is a fabless semiconductor company that is the first place systems designers go to realize all the benefits of gallium nitride in their power conversion and control applications. To overcome silicon’s limitations in switching speed, temperature, voltage and current, the company develops the most complete range of gallium nitride power switching transistors for a wide variety of markets. GaN Systems’ unique Island Technology® addresses today’s challenges of cost, performance, and manufacturability resulting in devices that are smaller and more efficient than other GaN design approaches. The company is headquartered in Ottawa, Canada. For more information, please visit: www.gansystems.com.
More Information
Tracy Lamb
Corporate Communications
GaN Systems
+1 (613) 686-1996 ext. 149 (office)
tlamb@gansystems.com
www.gansystems.com
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