GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.

Press Release Summary:




Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency.



Original Press Release:



MACOM Announces New 650 W GaN on SiC HEMT Pulsed Power Transistor



Internally Matched 500 W Power Transistor Provides High Gain, Efficiency and Ruggedness over 960-1215 MHz Bandwidth



Lowell, Mass — M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications. This transistor is available in standard flange or earless flange packaging.



The MAGX-000912-650L00/MAGX-000912-650L0S is a gold metalized, internally matched, GaN on SiC depletion mode RF power transistor. Operating in the 960 to 1215 MHz frequency range, the MAGX-000912-650L0x is a rugged and robust transistor, boasting a mean time to failure (MTTF) of 600 years.



The internally matched MAGX-000912-650L0x features 650 W of peak output power with 20 dB typical gain and 62% drain efficiency. The semiconductor structure is designed to achieve a high drain breakdown voltage (BVdss), which enables reliable and stable operation at 50V in extreme mismatched load conditions unparalleled with older semiconductor technologies. Other features include flat gain versus frequency performance and a common-source configuration for broadband class AB operation.



The MAGX-000912-650L0x was developed using state of the art wafer fabrication processes, and provides customers with high gain, efficiency, bandwidth and ruggedness to meet today’s demanding application needs. This transistor is optimized for civilian and military pulsed avionics amplifier applications in the 960 to 1215 MHz range, for Mode-S, TCAS, JTIDS, DME and TACAN operation.



“The transistor is a clear leader in high pulsed power GaN technology with 650 W of output power combined with excellent gain, efficiency and rugged performance,” said Gary Lopes, Senior Product Director, MACOM. “The device is an ideal candidate for customers looking to upgrade L-Band avionics systems to the next level of pulsed power performance and experience the solid reliability that is offered by MACOM GaN solutions.”



The MAGX-000912-650L0x is RoHS Compliant and 260°C reflow compatible.



The table below outlines typical performance:








































Parameters

Units

MAGX-000912-650L0x

Frequency

MHz

960-1215

Pout

W

650

Gain

dB

20

Efficiency

%

62

Pulse

µs

128

Duty

%

10



The MAGX-0009120650L00/MAGX-000912-650L0S is available in standard flange or earless flange packaging from stock. Final datasheets and additional product information can be obtained from the MACOM website at: www.macom.com.



ABOUT MACOM

M/A-COM Technology Solutions Holdings, Inc. (www.macom.com) is a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products that enable next-generation Internet and modern battlefield applications. Recognized for its broad catalog portfolio of technologies and products, MACOM serves diverse markets, including high speed optical, satellite, radar, wired & wireless networks, automotive, industrial, medical and mobile devices. A pillar of the semiconductor industry, we thrive on more than 60 years of solving our customers' most complex problems, serving as a true partner for applications ranging from RF to Light.



Headquartered in Lowell, Massachusetts, M/A-COM Tech is certified to the ISO9001 international quality standard and ISO14001 environmental management standard. M/A-COM Tech has design centers and sales offices throughout North America, Europe, Asia and Australia.



MACOM, M/A-COM, M/A-COM Technology Solutions, M/A-COM Tech, Partners in RF & Microwave, The First Name in Microwave and related logos are trademarks of MACOM. All other trademarks are the property of their respective owners.



For more information about MACOM, please visit www.macom.com; follow @MACOMtweets on Twitter; join MACOM on LinkedIn, or visit the MACOM YouTube Channel.



DISCLAIMER FOR NEW PRODUCTS:

Any express or implied statements in MACOM product announcements are not meant as warranties or warrantable specifications of any kind. The only warranty MACOM may offer with respect to any product sale is one contained in a written purchase agreement between MACOM and the purchaser concerning such sale and signed by a duly authorized MACOM employee, or, to the extent MACOM's purchase order acknowledgment so indicates, the limited warranty contained in MACOM's standard Terms and Conditions for Quotation or Sale, a copy of which may be found at: www.macomtech.com/content/customersupport.



FOR SALES INFORMATION, PLEASE CONTACT:

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MEDIA CONTACTS:

Ozzie Billimoria

M/A-COM Technology Solutions Inc.

978-656-2896

ozzie.billimoria@macom.com



Colin Boroski

Rainier Communications

508-475-0025 x142

cboroski@rainierco.com



Gerlinde Knoepfle

embedded PR

+49 (0)89 64913634-12

gk@embedded-pr.de

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